Smart Low Side Power Switch HITFET BTS 3134N Features Product Summary · Logic Level Input Drain source voltage VDS 42 · Input Protection (ESD) On-state resistance RDS(on) 50 m · Thermal shutdown Nominal load current I D(Nom) 3 A • Green product (RoHS compliant) Clamping energy EAS V 500 mJ · Overload protection · Short circuit protection 4 · Overvoltage protection · Current limitation 3 · Analog driving possible 2 1 VPS05163 Application All kinds of resistive, inductive and capacitive loads in switching or linear applications µC compatible power switch for 12 V DC applications Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded protection functions. Vbb M Drain HITFET Current Limitation In Pin 2 and 4 (TAB) OvervoltageProtection Gate-Driving Unit Pin 1 ESD Overload Protection Overtemperature Protection Short circuit Protection Pin 3 Source Datasheet 1 Rev. 1.3, 2008-04-14 Smart Low Side Power Switch HITFET BTS 3134N Maximum Ratings at T j = 25°C, unless otherwise specified Parameter Symbol Value Drain source voltage VDS 42 Drain source voltage for short circuit protection VDS(SC) 30 Unit V T j = -40...150°C IIN Continuous input current mA -0.2V VIN 10V no limit VIN < -0.2V or VIN > 10V Operating temperature | IIN | 2 Tj -40 ...+150 Storage temperature Tstg -55 ... +150 Power dissipation Ptot 3.8 W Unclamped single pulse inductive energy 1) EAS 500 mJ Load dump protection VLoadDump2) = V A + VS VIN = 0 and 10 V, t d = 400 ms, RI = 2 , VLD 53.5 V 2 kV °C T C = 85 °C R L = 4.5 , VA = 13.5 V Electrostatic discharge voltage (Human Body Model) VESD according to MIL STD 883D, method 3015.7 and EOS/ESD assn. standard S5.1 - 1993 Thermal resistance RthJA junction - ambient: K/W @ min. footprint 125 @ 6 cm2 cooling area 3) 72 RthJS junction-soldering point: 17 K/W 1 Not tested, specified by design. 2VLoaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 3 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for drain connection. PCB mounted vertical without blown air. Datasheet 2 Rev. 1.3, 2008-04-14 Smart Low Side Power Switch HITFET BTS 3134N Electrical Characteristics Symbol Parameter at Tj = 25°C, unless otherwise specified Values Unit min. typ. max. 42 - 55 V - 1.5 10 µA Characteristics VDS(AZ) Drain source clamp voltage Tj = - 40 ...+ 150, ID = 10 mA Off-state drain current Tj = -40 ... +150°C IDSS VDS = 32 V, VIN = 0 V VIN(th) Input threshold voltage V ID = 1.4 mA, Tj = 25 °C 1.3 1.7 2.2 ID = 1.4 mA, Tj = 150 °C 0.8 - - - 10 30 On state input current IIN(on) On-state resistance RDS(on) VIN = 5 V, ID = 3 A, Tj = 25 °C VIN = 5 V, ID = 3 A, Tj = 150 °C µA m - 45 60 - 75 100 VIN = 10 V, ID = 3 A, Tj = 25 °C - 35 50 VIN = 10 V, ID = 3 A, Tj = 150 °C - 65 90 RDS(on) On-state resistance ID(Nom) Nominal load current VDS = 0.5 V, Tj < 150°C, VIN = 10 V, TA = 85 °C Current limit (active if VDS>2.5 V)1) ID(lim) A 3 - - 18 24 30 VIN = 10 V, VDS = 12 V, tm = 200 µs 1Device switched on into existing short circuit (see diagram Determination of I D(lim)). If the device is in on condit and a short circuit occurs, these values might be exceeded for max. 50 µs. Datasheet 3 Rev. 1.3, 2008-04-14 Smart Low Side Power Switch HITFET BTS 3134N Electrical Characteristics Parameter Symbol at Tj = 25°C, unless otherwise specified Values Unit min. typ. max. t on - 60 100 t off - 60 100 -dV DS/dt on - 0.3 1.5 dV DS/dt off - 0.7 1.5 Dynamic Characteristics VIN to 90% I D: R L = 4.7 , VIN = 0 to 10 V, Vbb = 12 V Turn-off time VIN to 10% ID: Turn-on time R L = 4.7 , VIN = 10 to 0 V, Vbb = 12 V 70 to 50% Vbb: R L = 4.7 , VIN = 0 to 10 V, Vbb = 12 V Slew rate off 50 to 70% Vbb: Slew rate on R L = 4.7 , VIN = 10 to 0 V, Vbb = 12 V µs V/µs Protection Functions1) Thermal overload trip temperature Tjt 150 175 - °C Input current protection mode IIN(Prot) 80 160 300 µA Input current protection mode IIN(Prot) - 130 300 EAS 500 - - mJ VSD - 1 - V Tj = 150 °C Unclamped single pulse inductive energy 2) ID = 3 A, Tj = 25 °C, Vbb = 12 V Inverse Diode Inverse diode forward voltage IF = 15 A, tm = 250 µs, VIN = 0 V, tP = 300 µs 1Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. 2 Not tested, specified by design. Datasheet 4 Rev. 1.3, 2008-04-14 Smart Low Side Power Switch HITFET BTS 3134N Block diagram Inductive and overvoltage output clamp Terms RL V D Z 2 I IN 1 D IN ID VDS Vbb HITFET S S 3 VIN HITFET Short circuit behaviour Input circuit (ESD protection) V IN Gate Drive Input I Source/ Ground IN I D T t t t j t Datasheet 5 Rev. 1.3, 2008-04-14 Smart Low Side Power Switch HITFET BTS 3134N 1 Maximum allowable power dissipation 2 On-state resistance Ptot = f(TS) resp. Ptot = f(TA) @ R thJA=72 K/W R ON = f(T j); ID=3A; V IN=10V 10 100 m W 8 80 RDS(on) max. 7 Ptot max. 6 70 typ. 60 5 50 4 40 3 30 2 6cm2 20 1 10 0 -75 -50 -25 0 25 50 75 100 °C 0 -50 150 -25 0 25 50 75 100 125 °C TS ;TA 3 On-state resistance 4 Typ. input threshold voltage R ON = f(Tj ); ID= 3A; VIN=5V VIN(th) = f(T j); ID = 0.7 mA; V DS = 12V 2 110 m V max. 90 1.6 80 VGS(th) RDS(on) 175 Tj typ. 70 1.4 1.2 60 1 50 0.8 40 0.6 30 20 0.4 10 0.2 0 -50 -25 0 25 50 75 100 125 °C 0 -50 175 Tj Datasheet -25 0 25 50 75 100 °C 150 Tj 6 Rev. 1.3, 2008-04-14 Smart Low Side Power Switch HITFET BTS 3134N 5 Typ. transfer characteristics 6 Typ. short circuit current ID =f(VIN ); VDS=12V; TJstart=25°C I D(lim) = f(Tj); VDS=12V Parameter: V IN A A 20 20 ID 30 ID 30 Vin=10V 15 15 10 10 5 5 0 0 1 2 3 4 5 6 7 8 V 0 -50 10 5V -25 0 25 50 75 100 125 °C VIN 175 Tj 7 Typ. output characteristics 8 Typ. off-state drain current ID =f(VDS ); TJstart =25°C IDSS = f(Tj ) Parameter: V IN 35 11 µA max. A 10V 9 7V 25 I DSS 8 ID 6V 7 5V 20 6 4V 5 15 4 10 Vin=3V 3 2 5 typ. 1 0 0 1 2 3 4 V 0 -50 6 VDS Datasheet -25 0 25 50 75 100 125 °C 175 Tj 7 Rev. 1.3, 2008-04-14 Smart Low Side Power Switch HITFET BTS 3134N 9 Typ. overload current 10 Typ. transient thermal impedance ID(lim) = f(t), Vbb =12 V, no heatsink Parameter: Tjstart Z thJA=f(tp) @ 6 cm2 cooling area Parameter: D=tp/T 10 40 2 K/W A D=0.5 10 0.1 ZthJA I D(lim) 30 0.2 1 -40°C 25 0.05 10 0.02 0 0.01 20 15 10 85°C 150°C 10 -1 10 -2 25°C 5 0 0 Single pulse 0.5 1 1.5 2 2.5 3 ms t 10 4 -3 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 s 10 3 tp 11 Determination of ID(lim) ID(lim) = f(t); tm = 200µs Parameter: TJstart 40 A I D(lim) 30 -40°C 25 25°C 20 85°C 15 150°C 10 5 0 0 0.1 0.2 0.3 0.4 ms 0.6 t Datasheet 8 Rev. 1.3, 2008-04-14 Smart Low Side Power Switch HITFET BTS 3134N Package Outlines Package Outlines 1.6±0.1 6.5 ±0.2 A 0.1 MAX. 3 ±0.1 7 ±0.3 3 2 0.5 MIN. 1 2.3 0.7 ±0.1 B 15˚ MAX. 4 3.5 ±0.2 1 4.6 0.28 ±0.04 0...10˚ 0.25 M A 0.25 M B GPS05560 Figure 1 PG-SOT223-4 (Plastic Green Small Outline Transistor Package) Green Product (RoHS compliant) To meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pbfree finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020). Please specify the package needed (e.g. green package) when placing an order You can find all of our packages, sorts of packing and others in our Infineon Internet Page “Products”: http://www.infineon.com/products. Datasheet 9 Dimensions in mm Rev. 1.3, 2008-04-14 Smart Low Side Power Switch HITFET BTS 3134N Revision History 2 Revision History Version Rev. 1.3 Date Changes 2008-04-14 Package information updated to SOT223-4 Rev. 1.2 2007-03-28 released automotive green version Package parameter (humidity and climatic) removed in Maximum ratings AEC icon added RoHS icon added Green product (RoHS-compliant) added to the feature list Package information updated to green Green explanation added Rev. 1.1 2004-02-02 released production version Datasheet 10 Rev. 1.3, 2008-04-14 Edition 2008-04-14 Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2008. All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). 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