V6WL45C-M3 Datasheet

V6WL45C
www.vishay.com
Vishay General Semiconductor
Dual Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.34 V at IF = 3 A
FEATURES
• Trench MOS Schottky technology
TMBS®
• Ideal for automated placement
TO-252 (D-PAK)
• Low forward voltage drop, low power losses
• High efficiency operation
K
• Meets MSL level 1, per
LF maximum peak of 260 °C
J-STD-020,
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
A
A
TYPICAL APPLICATIONS
V6WL45C
A
A
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
K
HEATSINK
MECHANICAL DATA
PRIMARY CHARACTERISTICS
IF(AV)
2x3A
VRRM
45 V
IFSM
80 A
VF at IF = 3 A (TA = 125 °C)
0.34 V
TJ max.
150 °C
Package
TO-252 (D-PAK)
Diode variation
Single
Case: TO-252 (D-PAK)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
per
Polarity: As marked
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
(fig. 1)
V6WL45C
UNIT
VRRM
45
V
6
per device
per diode
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
Operating junction and storage temperature range
Revision: 02-Aug-13
SYMBOL
IF(AV)
A
3
IFSM
80
A
TJ, TSTG
- 40 to + 150
°C
Document Number: 89968
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V6WL45C
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TA = 25 °C
Instantaneous forward voltage per diode
IF = 3 A
Reverse current per diode
VR = 45 V
TYP.
MAX.
0.43
0.52
0.34
0.43
-
1000
μA
8
15
mA
VF (1)
TA = 125 °C
TA = 25 °C
IR (2)
TA = 125 °C
UNIT
V
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width  5 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V6WL45C
RJC
per device
Typical thermal resistance
UNIT
3.6
per diode
1.8
RJA (1) (2)
per device
°C/W
65
Notes
(1) The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT < 1/R
D
J
JA
(2) Free air, without heatsink
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
0.38
I
2500/reel
13" diameter plastic tape and reel
V6WL45C-M3/I
RATINGS AND CHARACTERISTICS CURVES
7
1.4
D = 0.5
RthJA=RthJC=1.8oC/W
6
5
4
TA , RthJA=65oC/W
3
2
1
0
D = 0.8
D = 0.3
D = 0.2
1.2
Average Power Loss (W)
Average Forward Rectified Current (A)
(TA = 25 °C unless otherwise noted)
1.0
D = 0.1
D = 1.0
0.8
0.6
T
0.4
0.2
D = tp/T
tp
2.5
3
0.0
0
25
50
75
100
125
150
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
Revision: 02-Aug-13
0
0.5
1
1.5
2
3.5
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics Per Diode
Document Number: 89968
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V6WL45C
www.vishay.com
Vishay General Semiconductor
10 000
Junction Capacitance (pF)
Instantaneous Forward Current (A)
100
TA = 150 °C
10
TA = 125 °C
TA = 100 °C
1
TA = 25 °C
0.1
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
1000
100
10
0.9
0.1
1
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
100
TA = 150 °C
TA = 125 °C
TA = 100 °C
1
0.1
TA = 25 °C
0.01
0.001
20
30
40
50
60
70
80
90
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics Per Diode
Revision: 02-Aug-13
Fig. 5 - Typical Junction Capacitance Per Diode
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Current (mA)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
10
10
10
Junction to Case
1
0.1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance Per Device
Document Number: 89968
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For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V6WL45C
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-252 (D-PAK)
A
E
Mounting Pad Layout
in inches (millimeters)
0.002"
c
-A-
0.244 MIN.
(6.2)
0.05 mm
b3
L3
1.55 mm REF.
0.256
(6.5) MIN.
D
H
A1
L4
b2
0.39 (9.9)
0.488 (12.4)
b
e
See detail A
0.094
(2.4) MIN.
c
0.051 MIN.
(1.3)
0.086 (2.19)
0.094 (2.39)
L2
D1
E1
θ
L
0.004"
0.1 mm
SYMBOL
INCHES
MILLIMETERS
MIN.
MAX.
MIN.
MAX.
A
0.086
0.094
2.19
2.38
A1
-
0.005
-
0.13
b
0.025
0.035
0.64
0.89
b2
0.033
0.045
0.84
1.14
b3
0.205
0.215
5.21
5.46
c
0.018
0.024
0.46
0.61
D
0.235
0.250
5.97
6.22
D1
0.205
-
5.21
-
E
0.250
0.265
6.35
6.73
E1
0.190
-
4.83
-
e
0.090 BSC.
2.29 BSC.
H
0.380
0.410
9.65
10.41
L
0.055
0.070
1.40
1.78
L2
0.020 BSC.
0.51 BSC.
L3
0.035
0.050
0.89
1.27
L4
0.025
0.039
0.64
1.01

0°
8°
0°
8°
Note
• Conforms to JEDEC TO-252 variation AA except dimension “D”
Revision: 02-Aug-13
Document Number: 89968
4
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000