Power Transistors 2SC5392 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm M Di ain sc te on na tin nc ue e/ d ■ Features ● ● ● (TC=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 800 V VCES 800 V Collector to emitter voltage VCEO 500 V Emitter to base voltage VEBO 8 V Peak collector current ICP 3.0 A Collector current IC 1.5 A Base current IB 0.5 A Collector power TC=25°C Ta=25°C dissipation 25 PC Junction temperature Tj Storage temperature Tstg Parameter 3.0±0.5 1.4±0.2 2.6±0.1 1.6±0.2 0.8±0.1 1 2 0.55±0.15 2.54±0.3 3 5.08±0.5 1:Base 2:Collector 3:Emitter TO–220D Full Pack Package 150 ˚C –55 to +150 ˚C (TC=25˚C) Symbol ICBO Conditions min typ VCB = 800V, IE = 0 max Unit 100 µA 100 µA IEBO VEB = 5V, IC = 0 VCEO IC = 10mA, IB = 0 500 hFE1 VCE = 5V, IC = 0.1A 15 hFE2 VCE = 5V, IC = 0.6A 8 Collector to emitter saturation voltage VCE(sat) IC = 0.6A, IB = 0.17A 1.0 V Base to emitter saturation voltage VBE(sat) IC = 0.6A, IB = 0.17A 1.5 V Transition frequency fT VCE = 10V, IC = 0.1A, f = 1MHz Turn-on time ton Storage time tstg Fall time tf Collector to emitter voltage Forward current transfer ratio Pl Emitter cutoff current φ3.2±0.1 W 2.0 ■ Electrical Characteristics Collector cutoff current 2.9±0.2 ea s ht e v tp is :// it pa fo na llo so win ni g c. U co R .jp L a /s bo em u ic t la on te /e st -in in de for x. ma ht t m ion l . ■ Absolute Maximum Ratings 15.0±0.5 ● 4.6±0.2 9.9±0.3 High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Dielectric breakdown voltage of the package: > 5kV 13.7±0.2 4.2±0.2 ● IC = 0.6A, IB1 = 0.17A, IB2 = – 0.34A, VCC = 200V 20 V MHz 1.0 µs 3.0 µs 0.3 µs 1 Power Transistors 2SC5392 VCE(sat) — IC IB=70mA 60mA 50mA 40mA 0.6 30mA 20mA 0.4 VBE(sat) — IC Ta=25˚C 10 1 100 Base to emitter saturation voltage VBE(sat) (V) 0.8 100 Ta=25˚C 10 1 M Di ain sc te on na tin nc ue e/ d Collector current IC (A) TC=25˚C Collector to emitter saturation voltage VCE(sat) (V) IC — VCE 1.0 10mA 0.2 0 0 2 4 6 8 10 hFE — IC Forward current transfer ratio hFE 1000 Ta=25˚C 100 10 1 0.1 0.01 0.1 1 10 Pl Collector current IC (mA) 2 0.01 0.01 0.1 1 Collector current IC (A) 10 0.1 0.01 0.01 0.1 1 Collector current IC (A) ea s ht e v tp is :// it pa fo na llo so win ni g c. U co R .jp L a /s bo em u ic t la on te /e st -in in de for x. ma ht t m ion l . Collector to emitter voltage VCE (V) 0.1 10 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. (3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: – Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. – Any applications other than the standard applications intended. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.