PANASONIC MA26111

Switching Diodes
MA26111
Silicon epitaxial planar type
For switching circuits
Unit: mm
 Features
 Allowing high-density mounting
 Short reverse recovery time trr
 Small terminal capacitance Ct
 High breakdown voltage: VR = 80 V
2
1
0.60±0.05
0.01±0.005
 Absolute Maximum Ratings Ta = 25°C
Symbol
Rating
Unit
Reverse voltage
VR
80
V
Maximum peak reverse voltage
VRM
80
V
Forward current
IF
100
mA
Peak forward current
IFM
225
mA
Non-repetitive peak forward surge current *
IFSM
500
mA
Junction temperature
Tj
125
°C
Storage temperature
Tstg
–55 to +125
°C
0.25±0.05
0.50±0.05
Parameter
0.25±0.05
2
1
0.65±0.01
1: Anode
2: Cathode
0.05±0.03
0.39+0.01
−0.03
1.00±0.05
0.05±0.03
ML-2-N1 Package
Marking Symbol: 1
Note) * : t = 1 s
 Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min
Forward voltage
VF
IF = 100 mA
Reverse voltage
VR
IR = 100 µA
Reverse current
IR
VR = 75 V
Terminal capacitance
Ct
VR = 0, f = 1 MHz
Reverse recovery time *
trr
IF = 10 mA, VR = 6 V, Irr = 0.1 IR ,
RL = 100 Ω
Typ
Max
Unit
0.95
1.2
V
80
V
0.6
100
nA
2
pF
3
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz
3. . *: trr measurement circuit
Bias Application Unit (N-50BU)
Input Pulse
tp
tr
10%
A
Pulse Generator
(PG-10N)
Rs = 50 Ω
Publication date: May 2005
VR
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
SKF00068AED
90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Output Pulse
t
IF
trr
t
Irr = 0.1 IR
IF = 10 mA
VR = 6 V
RL = 100 Ω
1
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semiconductors described in this book
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