IRF IRF7807VD2PBF

PD-95291
IRF7807VD2PbF
FETKY™ MOSFET / SCHOTTKY DIODE
• Co-Pack N-channel HEXFET® Power MOSFET
and Schottky Diode
• Ideal for Synchronous Rectifiers in DC-DC
Converters Up to 5A Output
• Low Conduction Losses
• Low Switching Losses
• Low Vf Schottky Rectifier
• Lead-Free
1
8
K/D
A/S
2
7
K/D
A/S
3
6
K/D
G
4
5
K/D
D
A/S
Description
The FETKY™ family of Co-Pack HEXFET®MOSFETs and
Schottky diodes offers the designer an innovative, board
space saving solution for switching regulator and power
management applications. HEXFET power MOSFETs
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. Combining
this technology with International Rectifier’s low forward
drop Schottky rectifiers results in an extremely efficient
device suitable for use in a wide variety of portable
electronics applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics. The SO8 package is designed for vapor phase, infrared or wave
soldering techniques.
Top View
SO-8
DEVICE CHARACTERISTICS…
IRF7807VD2
RDS(on)
17mΩ
QG
9.5nC
Qsw
3.4nC
Qoss
12nC
Absolute Maximum Ratings
Parameter
Symbol
Max.
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
±20
ID
8.3
Continuous Drain or Source
25°C
Current (VGS ≥ 4.5V)
70°C
Pulsed Drain Current
Power Dissipationƒ
6.6
IDM
25°C
PD
70°C
Schottky and Body Diode
25°C
Average ForwardCurrent„
70°C
V
A
66
2.5
1.6
IF (AV)
Units
3.7
W
A
2.3
TJ, TSTG
–55 to 150
°C
Parameter
Maximum Junction-to-Ambientƒ
RθJA
Max.
50
Units
°C/W
Maximum Junction-to-Lead
RθJL
20
°C/W
Junction & Storage Temperature Range
Thermal Resistance
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10/08/04
IRF7807VD2PbF
Electrical Characteristics
Parameter
Min
Typ
Max
Units
30
–
–
V
17
25
mΩ
Drain-to-Source
Breakdown Voltage
BVDSS
Static Drain-Source
on Resistance
RDS(on)
Gate Threshold Voltage
VGS(th)
Drain-Source Leakage
Current
IDSS
Gate-Source Leakage
Current*
IGSS
Total Gate Charge*
QG
9.5
Pre-Vth
Gate-Source Charge
QGS1
2.3
Post-Vth
Gate-Source Charge
QGS2
1.0
Gate to Drain Charge
QGD
2.4
Switch Chg(Qgs2 + Qgd)
Qsw
3.4
5.2
16.8
1.0
Current*
Conditions
VGS = 0V, ID = 250µA
VGS = 4.5V, ID = 7.0A‚
V
VDS = VGS,ID = 250µA
50
µA
VDS = 24V, V GS = 0
6.0
mA
VDS = 24V, VGS = 0,
±100
nA
Tj = 100°C
Output Charge*
Qoss
12
RG
2.0
Turn-on Delay Time
td (on)
6.3
Rise Time
tr
1.2
Turn-off Delay Time
td
tf
VGS=4.5V, ID=7.0A
VDS = 16V
Gate Resistance
Fall Time
14
VGS = ±20V
nC
VDS = 16V, V GS = 0
Ω
VDD = 16V, ID = 7.0A
ns
11
(off)
VGS = 5V, RG= 2Ω
Resistive Load
2.2
Schottky Diode & Body Diode Ratings and Characteristics
Parameter
Diode Forward Voltage
VSD
Reverse Recovery Time
trr
Reverse Recovery Charge
Forward Turn-On Time
Qrr
ton
Notes:

‚
ƒ
„
…
*
2
Min
Typ
36
41
Max
0.54
0.43
Units
Conditions
V Tj = 25°C, Is = 3.0A, VGS =0V‚
Tj = 125°C, Is = 3.0A, VGS =0V‚
ns Tj = 25°C, Is = 7.0A, VDS = 16V
nC
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400 µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board
50% Duty Cycle, Rectangular
Typical values of RDS(on) measured at VGS = 4.5V, QG, QSW and QOSS
measured at VGS = 5.0V, IF = 7.0A.
Device are 100% tested to these parameters.
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IRF7807VD2PbF
Power MOSFET Selection for DC/DC
Converters
4
Drain Current
Control FET
t2
t3
t1
VGTH
t0
2
QGD
Ploss = Pconduction+ Pswitching+ Pdrive+ Poutput
Gate Voltage
QGS2
Power losses in the control switch Q1 are given
by;
1
QGS1
Special attention has been given to the power losses
in the switching elements of the circuit - Q1 and Q2.
Power losses in the high side switch Q1, also called
the Control FET, are impacted by the Rds(on) of the
MOSFET, but these conduction losses are only about
one half of the total losses.
Drain Voltage
This can be expanded and approximated by;
Ploss = (Irms 2 × Rds(on ) )
⎛
Qgs 2
Qgd
⎞ ⎛
⎞
+⎜I ×
× Vin × f ⎟ + ⎜ I ×
× Vin × f ⎟
ig
ig
⎝
⎠ ⎝
⎠
+ (Qg × Vg × f )
+
⎛ Qoss
× Vin × f ⎞
⎝ 2
⎠
This simplified loss equation includes the terms Qgs2
and Qoss which are new to Power MOSFET data sheets.
Qgs2 is a sub element of traditional gate-source
charge that is included in all MOSFET data sheets.
The importance of splitting this gate-source charge
into two sub elements, Qgs1 and Qgs2, can be seen from
Fig 1.
Qgs2 indicates the charge that must be supplied by
the gate driver between the time that the threshold
voltage has been reached (t1) and the time the drain
current rises to Idmax (t2) at which time the drain voltage begins to change. Minimizing Qgs2 is a critical factor in reducing switching losses in Q1.
Qoss is the charge that must be supplied to the output capacitance of the MOSFET during every switching cycle. Figure 2 shows how Qoss is formed by the
parallel combination of the voltage dependant (nonlinear) capacitance’s Cds and Cdg when multiplied by
the power supply input buss voltage.
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Figure 1: Typical MOSFET switching waveform
Synchronous FET
The power loss equation for Q2 is approximated
by;
*
Ploss = Pconduction + Pdrive + Poutput
(
2
Ploss = Irms × Rds(on)
)
+ (Qg × Vg × f )
⎛Q
⎞
+ ⎜ oss × Vin × f + (Qrr × Vin × f )
⎝ 2
⎠
*dissipated primarily in Q1.
3
IRF7807VD2PbF
For the synchronous MOSFET Q2, Rds(on) is an important characteristic; however, once again the importance of gate charge must not be overlooked since
it impacts three critical areas. Under light load the
MOSFET must still be turned on and off by the control IC so the gate drive losses become much more
significant. Secondly, the output charge Qoss and reverse recovery charge Qrr both generate losses that
are transfered to Q1 and increase the dissipation in
that device. Thirdly, gate charge will impact the
MOSFETs’ susceptibility to Cdv/dt turn on.
The drain of Q2 is connected to the switching node
of the converter and therefore sees transitions between ground and Vin. As Q1 turns on and off there is
a rate of change of drain voltage dV/dt which is capacitively coupled to the gate of Q2 and can induce
a voltage spike on the gate that is sufficient to turn
the MOSFET on, resulting in shoot-through current .
The ratio of Qgd/Qgs1 must be minimized to reduce the
potential for Cdv/dt turn on.
Spice model for IRF7807V can be downloaded in
machine readable format at www.irf.com.
Figure 2: Qoss Characteristic
Typical Mobile PC Application
The performance of these new devices has been tested
in circuit and correlates well with performance predictions generated by the system models. An advantage of
this new technology platform is that the MOSFETs it
produces are suitable for both control FET and synchronous FET applications. This has been demonstrated with
the 3.3V and 5V converters. (Fig 3 and Fig 4). In these
applications the same MOSFET IRF7807V was used for
both the control FET (Q1) and the synchronous FET
(Q2). This provides a highly effective cost/performance
solution.
5.0V Supply : Q1=Q2= IRF7807V
93
95
92
94
91
93
90
92
Efficiency (%)
Efficiency (%)
3.3V Supply : Q1=Q2= IRF7807V
89
88
87
86
Vin=24V
85
Vin=14V
84
Vin=10V
90
Vin=24V
89
Vin=14V
88
Vin=10V
87
86
83
1
2
3
Load current (A)
Figure 3
4
91
4
5
1
2
3
4
5
Load current (A)
Figure 4
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RDS(on) , Drain-to-Source On Resistance
(Normalized)
2.0
RDS(on) , Drain-to -Source On Resistance ( Ω)
IRF7807VD2PbF
ID = 7.0A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 4.5V
0
20
40
60
80 100 120 140 160
0.030
0.025
0.020
ID = 7.0A
0.015
0.010
2.0
TJ , Junction Temperature ( °C)
6.0
8.0
10.0
12.0
14.0
16.0
VGS, Gate -to -Source Voltage (V)
Fig 5. Normalized On-Resistance
Vs. Temperature
Fig 7. On-Resistance Vs. Gate Voltage
70
70
VGS
4.5V
3.5V
3.0V
2.5V
2.0V
BOTTOM 0.0V
VGS
4.5V
3.5V
3.0V
2.5V
2.0V
BOTTOM 0.0V
TOP
50
TOP
60
40
30
20
0.0 V
10
380µs PULSE WIDTH
Tj = 25°C
0
IS, Source-to-Drain Current (A)
60
IS, Source-to-Drain Current (A)
4.0
50
40
30
20
O.OV
10
380µS PULSE WIDTH
Tj = 150°C
0
0
0.2
0.4
0.6
0.8
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Reverse Output Characteristics
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1
0
0.2
0.4
0.6
0.8
1
VSD, Source-to-Drain Voltage (V)
Fig 8. Typical Reverse Output Characteristics
5
IRF7807VD2PbF
Thermal Response (Z thJA )
100
D = 0.50
0.20
10
0.10
0.05
PDM
0.02
1
t1
0.01
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Figure 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
VGS , Gate-to-Source Voltage (V)
5
ID = 7.0A
VDS = 16V
4
3
2
1
0
0
2
4
6
8
10
12
QG , Total Gate Charge (nC)
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
6
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IRF7807VD2PbF
MOSFET , Body Diode & Schottky Diode Characteristics
100
100
Reverse Current - I R ( mA )
Tj = 150°C
Tj = 125°C
Instantaneous Forward Current - I F ( A )
Tj = 25°C
10
10
125°C
100°C
1
75°C
0.1
50°C
25°C
0.01
0.001
0
5
10
15
20
25
30
Reverse Voltage - VR (V)
Fig. 12 - Typical Values of
Reverse Current Vs. Reverse Voltage
1
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Forward Voltage Drop - V SD ( V )
Fig. 11 - Typical Forward Voltage Drop
Characteristics
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IRF7807VD2PbF
SO-8 (Fetky) Package Outline
Dimensions are shown in millimeters (inches)
D
DIM
B
5
A
8
7
6
5
H
E
0.25 [.010]
1
2
3
A
4
MIN
.0532
.0688
1.35
1.75
A1 .0040
.0098
0.10
0.25
b
.013
.020
0.33
0.51
c
.0075
.0098
0.19
0.25
D
.189
.1968
4.80
5.00
E
.1497
.1574
3.80
4.00
e
.050 BASIC
e1
6X e
e1
C
1.27 BASIC
.025 BASIC
0.635 BASIC
H
.2284
.2440
5.80
6.20
K
.0099
.0196
0.25
0.50
L
.016
.050
0.40
1.27
y
0°
8°
0°
8°
y
0.10 [.004]
0.25 [.010]
MAX
K x 45°
A
8X b
MILLIMETERS
MAX
A
6
INCHES
MIN
A1
8X L
8X c
7
C A B
FOOTPRINT
NOT ES :
1. DIMENS IONING & TOLERANCING PER ASME Y14.5M-1994.
8X 0.72 [.028]
2. CONT ROLLING DIMENS ION: MILLIMET ER
3. DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS -012AA.
5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROTRUS IONS NOT TO EXCEED 0.15 [.006].
6.46 [.255]
6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROTRUS IONS NOT TO EXCEED 0.25 [.010].
7 DIMENS ION IS T HE LENGT H OF LEAD FOR SOLDERING TO
A S UBST RAT E.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 (Fetky) Part Marking Information
EXAMPLE: T HIS IS AN IRF7807D1 (FETKY)
INTERNAT IONAL
RECTIFIER
LOGO
8
XXXX
807D1
DATE CODE (YWW)
P = DIS GNAT ES LEAD - FREE
PRODUCT (OPTIONAL)
Y = LAS T DIGIT OF THE YEAR
WW = WEEK
A = AS S EMBLY S ITE CODE
LOT CODE
PART NUMBER
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IRF7807VD2PbF
SO-8 (Fetky) Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.10/04
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