PD - 95507
IRFBE30SPbF
IRFBE30LPbF
O
O
O
O
O
O
HEXFET® Power MOSFET
Dynamic dv/dt Rating
Repetitive Avalanche Rated
Fast Switching
Ease of Paralleling
Simple Drive Requirements
Lead-Free
D
VDSS = 800V
RDS(on) = 3.0Ω
G
ID = 4.1A
S
Description
Third Generation HEXFETs from International
Rectifier provide the designer with the best
combination of fast switching, ruggedized device
design, low on-resistance and cost-effectiveness.
D2Pak
IRFBE30S
TO-262
IRFBE30L
Absolute Maximum Ratings
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
Parameter
4.1
A
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
2.6
IDM
Pulsed Drain Current
PD @TC = 25°C
Maximum Power Dissipation
125
W
VGS
Linear Derating Factor
Gate-to-Source Voltage
1.0
± 20
W/°C
V
260
mJ
EAS
IAR
EAR
dv/dt
TJ
TSTG
c
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
c
16
d
c
Peak Diode Recovery dv/dt e
Repetitive Avalanche Energy
Operating Junction and
4.1
A
13
mJ
2.0
-55 to + 150
V/ns
°C
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Parameter
RθJC
RθCS
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
RθJA
Junction-to-Ambient
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Min.
Typ.
Max.
Units
–––
–––
1.0
°C/W
–––
0.50
–––
–––
–––
62
1
07/06/04
IRFBE30S/LPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
∆ΒVDSS/∆TJ
RDS(on)
VGS(th)
Min. Typ. Max. Units
Conditions
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
800
–––
–––
2.0
2.5
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.90
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
12
33
82
30
4.5
–––
–––
3.0
4.0
–––
100
500
100
-100
78
9.6
45
–––
–––
–––
–––
–––
LS
Internal Source Inductance
–––
7.5
–––
6mm (0.25in.)
from package
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
1300
310
190
–––
–––
–––
and center of die contact
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 5
gfs
IDSS
IGSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
V VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
Ω VGS = 10V, ID = 2.5A
V VDS = VGS, ID = 250µA
S VDS = 100V, ID = 2.5A
µA VDS = 800V, VGS = 0V
VDS = 640V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
nC ID = 4.1A
VDS = 400V
VGS = 10V, See Fig. 6 & 13
VDD = 400V
ns ID = 4.1A
RG = 12Ω
RD = 95Ω, See Fig. 10
D
nH Between lead,
f
f
f
pF
G
S
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
–––
–––
4.1
ISM
(Body Diode)
Pulsed Source Current
–––
–––
16
showing the
integral reverse
VSD
trr
Qrr
ton
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
1.8
720
2.7
p-n junction diode.
TJ = 25°C, IS = 4.1A, VGS = 0V
TJ = 25°C, IF = 4.1A
di/dt = 100A/µs
c
MOSFET symbol
A
–––
–––
–––
–––
480
1.8
V
ns
nC
D
G
f
S
f
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
VDD=50V, starting TJ = 25°C, L=29mH, RG=25Ω,
I AS = 4.1A. (See Figure 12).
ISD ≤ 4.1A, di/dt ≤ 100A/µs, VDD ≤ 600,
TJ ≤ 150°C.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
2
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IRFBE30S/LPbF
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3
IRFBE30S/LPbF
4
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IRFBE30S/LPbF
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5
IRFBE30S/LPbF
6
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IRFBE30S/LPbF
Peak Diode Recovery dv/dt Test Circuit
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
+
-
-
+
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
+
-
* Reverse Polarity for P-Channel
** Use P-Channel Driver for P-Channel Measurements
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
VGS=10V
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
ISD
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig-14 For N -Channel HEXFETS
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7
IRFBE30S/LPbF
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information
T HIS IS AN IRF 530S WIT H
LOT CODE 8024
AS S EMB LED ON WW 02, 2000
IN T HE AS S EMB LY LINE "L"
INT E RNAT IONAL
RE CT IF IER
LOGO
Note: "P" in as s embly line
pos ition indicates "Lead-F ree"
PART NUMB ER
F 530S
AS SE MBLY
LOT CODE
DAT E CODE
YE AR 0 = 2000
WE EK 02
LINE L
OR
INTE RNATIONAL
RECT IFIER
LOGO
AS S EMBLY
LOT CODE
8
PART NUMBER
F530S
DATE CODE
P = DES IGNATE S LEAD-FRE E
PRODUCT (OPTIONAL)
YE AR 0 = 2000
WE EK 02
A = AS S EMBLY S IT E CODE
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IRFBE30S/LPbF
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
EXAMPLE: T HIS IS AN IRL3103L
LOT CODE 1789
AS S EMBL ED ON WW 19, 1997
IN T HE AS S EMBLY LINE "C"
Note: "P" in as sembly line
position indicates "Lead-Free"
INT ERNAT IONAL
RECT IFIER
LOGO
AS S EMBLY
L OT CODE
PART NUMBER
DAT E CODE
YEAR 7 = 1997
WEEK 19
LINE C
OR
INT ERNAT IONAL
RECT IFIER
LOGO
AS S EMBLY
LOT CODE
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PART NUMBER
DAT E CODE
P = DES IGNAT ES LEAD-FREE
PRODUCT (OPT IONAL)
YEAR 7 = 1997
WEEK 19
A = AS S EMBLY S IT E CODE
9
IRFBE30S/LPbF
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
1.65 (.065)
0.368 (.0145)
0.342 (.0135)
15.42 (.609)
15.22 (.601)
24.30 (.957)
23.90 (.941)
TRL
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
30.40 (1.197)
MAX.
26.40 (1.039)
24.40 (.961)
3
4
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 07/04
10
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