® nd TrenchStop 2 IKW15N120T2 generation Series Low Loss DuoPack : IGBT in 2nd generation TrenchStop® technology with soft, fast recovery anti-parallel EmCon diode C • • • • • • • • • • Short circuit withstand time – 10µs Designed for : - Frequency Converters - Uninterrupted Power Supply TrenchStop® 2nd generation for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior Easy paralleling capability due to positive temperature coefficient in VCE(sat) Low EMI Low Gate Charge Very soft, fast recovery anti-parallel EmCon HE diode Qualified according to JEDEC1 for target applications Pb-free lead plating; RoHS compliant Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ E PG-TO-247-3 VCE IC VCE(sat),Tj=25°C Tj,max Marking Code Package 1200V 15A 1.75V 175°C K15T1202 PG-TO-247-3 Type IKW15N120T2 G Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCE 1200 V DC collector current (Tj = 150°C) IC A TC = 25°C 30 TC = 110°C 15 Pulsed collector current, tp limited by Tjmax ICpuls 60 Turn off safe operating area - 60 VCE ≤ 1200V, Tj ≤ 175°C Diode forward current (Tj = 150°C) IF TC = 25°C 25 TC = 110°C 15 Diode pulsed current, tp limited by Tjmax IFpuls 60 Gate-emitter voltage VGE ±20 V tSC 10 µs Ptot 235 W °C Short circuit withstand time 2) VGE = 15V, VCC ≤ 600V, Tj, start ≤ 175°C Power dissipation TC = 25°C Operating junction temperature Tj -40...+175 Storage temperature Tstg -55...+150 Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260 Wavesoldering only, temperature on leads only 1 2) J-STD-020 and JESD-022 Allowed number of short circuits: <1000; time between short circuits: >1s. Power Semiconductors 1 Rev. 2.1 Sep 08 ® nd TrenchStop 2 IKW15N120T2 generation Series Thermal Resistance Parameter Symbol Conditions Max. Value Unit RthJC 0.63 K/W RthJCD 1.12 Characteristic IGBT thermal resistance, junction – case Diode thermal resistance, junction – case Thermal resistance, RthJA 40 junction – ambient Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Value min. typ. max. 1200 - - T j = 25°C - 1.7 2.2 T j = 150 °C - 2.1 - T j = 175 °C - 2.2 - T j = 25°C - 1.75 2.2 T j = 150 °C - 1.8 - T j = 175 °C - 1.75 - 5.2 5.8 6.4 Unit Static Characteristic Collector-emitter breakdown voltage V(BR)CES VGE=0V, IC=500µA Collector-emitter saturation voltage VCE(sat) Diode forward voltage VF V V G E = 15 V, I C =15A VGE=0V, IF=15A Gate-emitter threshold voltage VGE(th) I C =0.6mA,V C E =V G E Zero gate voltage collector current ICES V C E = 12 00 V , VGE=0V mA T j = 25°C - - 0.4 T j = 150 °C - - 4.0 T j = 175 °C - - 20 Gate-emitter leakage current IGES V C E = 0 V , V G E =20V - - 600 nA Transconductance gfs V C E =20V, I C =15A - 8 - S Power Semiconductors 2 Rev. 2.1 Sep 08 ® nd TrenchStop 2 IKW15N120T2 generation Series Dynamic Characteristic Input capacitance Ciss V C E =25V, - 1000 - Output capacitance Coss VGE=0V, - 100 - Reverse transfer capacitance Crss f=1MHz - 56 - Gate charge QGate V C C = 96 0 V, I C =40A - 93 - nC - 13 - nH - A pF V G E =15V Internal emitter inductance LE measured 5mm (0.197 in.) from case Short circuit collector current1) IC(SC) V G E =15V,t S C ≤1 0 µs V C C = 600 V, T j , s t a r t = 2 5°C T j , s t a r t = 1 75 °C 82 60 Switching Characteristic, Inductive Load, at Tj=25 °C Parameter Symbol Conditions Value min. typ. max. - 32 - - 25 - - 362 - - 95 - - 1.25 - Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy ns - 0.8 - Ets T j = 25°C , V C C = 60 0 V, I C =15A, V G E = 0 /1 5 V, R G = 4 1 .8 Ω , L σ 2 ) =1 26nH, C σ 2 ) =34pF Energy losses include “tail” and diode reverse recovery. - 2.05 - Diode reverse recovery time trr T j = 25°C , - 300 - Diode reverse recovery charge Qrr V R = 60 0 V , I F =15A, - 1.3 µC Diode peak reverse recovery current Irrm d i F /d t= 450A/µs - 10 A Diode peak rate of fall of reverse recovery current during t b dirr/dt - 215 mJ Anti-Parallel Diode Characteristic 1) 2) ns - A/µs Rev. 2.1 Sep 08 Allowed number of short circuits: <1000; time between short circuits: >1s. Leakage inductance L σ a nd Stray capacity C σ due to dynamic test circuit in Figure E. Power Semiconductors 3 ® nd TrenchStop 2 IKW15N120T2 generation Series Switching Characteristic, Inductive Load, at Tj=175 °C Parameter Symbol Conditions Value min. typ. max. - 31 - - 30 - - 450 - - 176 - - 1.5 - Unit IGBT Characteristic - 1.3 - Ets T j = 175 °C V C C = 60 0 V, I C =15A, V G E = 0 /1 5 V, R G = 4 1 .8 Ω , L σ 1 ) =3 15nH, C σ 1 ) =34pF Energy losses include “tail” and diode reverse recovery. - 2.8 - Diode reverse recovery time trr T j = 175 °C - 460 - ns Diode reverse recovery charge Qrr V R = 60 0 V , I F =15A, - 2.65 - µC Diode peak reverse recovery current Irrm d i F /d t= 460A/µs - 13 - A Diode peak rate of fall of reverse recovery current during t b dirr/dt - 123 Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy ns mJ Anti-Parallel Diode Characteristic 1) A/µs Leakage inductance L σ a nd Stray capacity C σ due to dynamic test circuit in Figure E. Power Semiconductors 4 Rev. 2.1 Sep 08 ® nd TrenchStop 2 IKW15N120T2 generation Series tp=3µs 40A IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 60A TC=80°C TC=110°C Ic 20A 10µs 10A 50µs 150µs 1A 500µs Ic 20ms DC 0A 10Hz 100Hz 1kHz 10kHz 0.1A 1V 100kHz f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj ≤ 175°C, D = 0.5, VCE = 600V, VGE = 0/+15V, RG = 41.8Ω) IC, COLLECTOR CURRENT POWER DISSIPATION Ptot, 100W 100V 1000V VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25°C, Tj ≤175°C;VGE=15V) 200W 150W 10V 30A 20A 10A 50W 0W 25°C 50°C 75°C 100°C 125°C 0A 25°C 150°C TC, CASE TEMPERATURE Figure 3. Maximum power dissipation as a function of case temperature (Tj ≤ 175°C) Power Semiconductors 5 75°C 125°C TC, CASE TEMPERATURE Figure 4. Maximum DC Collector current as a function of case temperature (VGE ≥ 15V, Tj ≤ 175°C) Rev. 2.1 Sep 08 ® nd TrenchStop 2 60A 20V VGE=17V 15V 40A 13V 11V 30A 9V 7V 20A 20V 50A IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT generation Series 60A 50A 10A VGE=17V 15V 40A 13V 11V 30A 9V 7V 20A 10A 0A 0A 0V 1V 2V 3V 4V 0V VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic (Tj = 25°C) VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE 50A 40A 30A 20A 10A 0A TJ=175°C 25°C 0V 2V 4V 6V 8V 10V 12V 2V 3V 4V 3.0V IC=30A 2.5V 2.0V IC=15A 1.5V IC=7.5A 1.0V IC=2A 0.5V 0.0V 0°C VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristic (VCE=20V) Power Semiconductors 1V VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristic (Tj = 175°C) 60A IC, COLLECTOR CURRENT IKW15N120T2 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V) 6 Rev. 2.1 Sep 08 ® nd TrenchStop 2 td(off) tf t, SWITCHING TIMES t, SWITCHING TIMES generation Series 1000 ns td(off) 100ns td(on) 10ns IKW15N120T2 100 ns td(on) 10 ns tr 7.5A 15.0A tf 22.5A tr 10Ω IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, TJ=175°C, VCE=600V, VGE=0/15V, RG=41.8Ω, Dynamic test circuit in Figure E) 30Ω 50Ω 70Ω 90Ω 110Ω RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ=175°C, VCE=600V, VGE=0/15V, IC=15A, Dynamic test circuit in Figure E) VGE(th), GATE-EMITT TRSHOLD VOLTAGE t, SWITCHING TIMES td(off) 100ns tf td(on) tr 10ns 6.5V 6.0V 5.5V max. 5.0V 4.5V 4.0V typ. 3.5V min. 0°C 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE=600V, VGE=0/15V, IC=15A, RG=41.8Ω, Dynamic test circuit in Figure E) Power Semiconductors 0°C 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 600µA) 7 Rev. 2.1 Sep 08 ® nd TrenchStop 2 generation Series *) Eon and Ets include losses due to diode recovery *) Eon and Etsinclude losses due to diode recovery E, SWITCHING ENERGY LOSSES E, SWITCHING ENERGY LOSSES 7.5mJ IKW15N120T2 Ets* 5.0mJ Eon* 2.5mJ Eoff 5.00 mJ Ets* 3.75 mJ Eon* 2.50 mJ Eoff 1.25 mJ 0.0mJ 7.5A 15.0A 22.5A 0.00 mJ IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, TJ=175°C, VCE=600V, VGE=0/15V, RG=41.8Ω, Dynamic test circuit in Figure E) E on* E off 50°C 100°C 70Ω 90Ω 110Ω 5.00mJ Ets* 3.75mJ Eon* 2.50mJ Eoff 1.25mJ 0.00mJ 400V 150°C TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE=600V, VGE=0/15V, IC=15A, RG=41.8Ω, Dynamic test circuit in Figure E) Power Semiconductors E, SWITCHING ENERGY LOSSES E, SWITCHING ENERGY LOSSES 2.4mJ 0°C 50Ω *) Eon and Ets include losses due to diode recovery E ts * 0.0mJ 30Ω RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, TJ=175°C, VCE=600V, VGE=0/15V, IC=15A, Dynamic test circuit in Figure E) *) E on and E ts include losses due to diode recovery 1.2mJ 10Ω 500V 600V 700V VCE, COLLECTOR-EMITTER VOLTAGE Figure 16. Typical switching energy losses as a function of collector emitter voltage (inductive load, TJ=175°C, VGE=0/15V, IC=15A, RG=41.8Ω, Dynamic test circuit in Figure E) 8 Rev. 2.1 Sep 08 ® nd TrenchStop 2 960V 10V 1nF Ciss 100pF Coss 5V Crss 0V 0nC 25nC 50nC 10pF 75nC 15µs 10µs tSC, 5µs 0µs 12V 14V 16V 10V 20V 100A 75A 50A 25A 0A 18V VGE, GATE-EMITTETR VOLTAGE Figure 19. Short circuit withstand time as a function of gate-emitter voltage (VCE=600V, start at TJ≤175°C) Power Semiconductors 0V VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE=0V, f = 1 MHz) IC(sc), short circuit COLLECTOR CURRENT QGE, GATE CHARGE Figure 17. Typical gate charge (IC=15 A) SHORT CIRCUIT WITHSTAND TIME generation Series 240V c, CAPACITANCE VGE, GATE-EMITTER VOLTAGE 15V IKW15N120T2 12V 14V 16V 18V VGE, GATE-EMITTETR VOLTAGE Figure 20. Typical short circuit collector current as a function of gateemitter voltage (VCE ≤ 600V, Tj,start =175°C) 9 Rev. 2.1 Sep 08 nd ® 25A VCE 600V 20A 400V 15A 10A 200V 600V 10A IC 400V 200V 5A 5A VCE IC 0V 0A 0us 0.4us 0.8us 0 D=0.5 0.2 R,(K/W) 0.143 0.217 0.258 0.017 -1 10 K/W 0.1 0.05 0.02 0.01 -2 10 K/W τ, (s) -4 3.06*10 -3 3.47*10 -2 1.71*10 -1 2.63*10 R1 R2 single pulse C1=τ1/R1 C2=τ2/R2 0.4us 0.8us 1.2us t, TIME Figure 22. Typical turn off behavior (VGE=15/0V, RG=41.8Ω, Tj = 175°C, Dynamic test circuit in Figure E) ZthJC, TRANSIENT THERMAL RESISTANCE 10 K/W 0V 0A 0us 1.2us t, TIME Figure 21. Typical turn on behavior (VGE=0/15V, RG=41.8Ω, Tj = 175°C, Dynamic test circuit in Figure E) ZthJC, TRANSIENT THERMAL RESISTANCE generation Series 15A IC, COLLECTOR CURRENT VCE, COLLECTOR-EMITTER VOLTAGE TrenchStop 2 IKW15N120T2 0 10 K/W D=0.5 R,(K/W) 0.291 0.434 0.363 0.028 0.2 0.1 τ, (s) -4 2.75*10 -3 2.60*10 -2 1.48*10 -1 1.78*10 -1 10 K/W 0.05 R1 R2 0.02 C 1= τ1/R 1 0.01 C 2= τ2/R 2 single pulse -2 10µs 100µs 1ms 10ms 100ms tP, PULSE WIDTH Figure 23. IGBT transient thermal resistance (D = tp / T) Power Semiconductors 10 10 K/W 10µs 100µs 1ms 10ms 100ms tP, PULSE WIDTH Figure 24. Diode transient thermal impedance as a function of pulse width (D=tP/T) Rev. 2.1 Sep 08 ® nd TrenchStop 2 IKW15N120T2 generation Series 500ns 400ns 300ns TJ=175°C 200ns TJ=25°C 100ns Qrr, REVERSE RECOVERY CHARGE trr, REVERSE RECOVERY TIME 600ns 0ns 400A/µs 800A/µs dirr/dt, DIODE PEAK RATE OF FALL OF REVERSE RECOVERY CURRENT REVERSE RECOVERY CURRENT Irr, 15A TJ=25°C 10A 5A 800A/µs 1200A/µs diF/dt, DIODE CURRENT SLOPE Figure 25. Typical reverse recovery current as a function of diode current slope (VR=600V, IF=15A, Dynamic test circuit in Figure E) Power Semiconductors 11 800A/µs 1200A/µs diF/dt, DIODE CURRENT SLOPE Figure 24. Typical reverse recovery charge as a function of diode current slope (VR=600V, IF=15A, Dynamic test circuit in Figure E) TJ=25°C -600A/µs 20A 400A/µs TJ=25°C 1µC 400A/µs TJ=175°C 0A 2µC 0µC 1200A/µs diF/dt, DIODE CURRENT SLOPE Figure 23. Typical reverse recovery time as a function of diode current slope (VR=600V, IF=15A, Dynamic test circuit in Figure E) TJ=175°C 3µC -500A/µs -400A/µs TJ=175°C -300A/µs -200A/µs -100A/µs -0A/µs 400A/µs 800A/µs 1200A/µs diF/dt, DIODE CURRENT SLOPE Figure 26. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (VR=600V, IF=15A, Dynamic test circuit in Figure E) Rev. 2.1 Sep 08 ® nd TrenchStop 2 IKW15N120T2 generation Series 60A TJ=25°C 2.0V IF=30A 175°C VF, FORWARD VOLTAGE IF, FORWARD CURRENT 50A 40A 30A 20A 1.5V 7.5A 2A 1.0V 0.5V 10A 0A 15A 0V 1V 0.0V 2V VF, FORWARD VOLTAGE Figure 27. Typical diode forward current as a function of forward voltage Power Semiconductors 12 0°C 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 28. Typical diode forward voltage as a function of junction temperature Rev. 2.1 Sep 08 nd ® TrenchStop 2 IKW15N120T2 generation Series PG-TO247-3 M M MAX 5.16 2.53 2.11 1.33 2.41 2.16 3.38 3.13 0.68 21.10 17.65 1.35 16.03 14.15 5.10 2.60 MIN 4.90 2.27 1.85 1.07 1.90 1.90 2.87 2.87 0.55 20.82 16.25 1.05 15.70 13.10 3.68 1.68 MIN 0.193 0.089 0.073 0.042 0.075 0.075 0.113 0.113 0.022 0.820 0.640 0.041 0.618 0.516 0.145 0.066 5.44 3 19.80 4.17 3.50 5.49 6.04 Power Semiconductors MAX 0.203 0.099 0.083 0.052 0.095 0.085 0.133 0.123 0.027 0.831 0.695 0.053 0.631 0.557 0.201 0.102 Z8B00003327 0 0 5 5 7.5mm 0.214 3 0.780 0.164 0.138 0.216 0.238 20.31 4.47 3.70 6.00 6.30 13 0.799 0.176 0.146 0.236 0.248 17-12-2007 03 Rev. 2.1 Sep 08 ® nd TrenchStop 2 IKW15N120T2 generation Series i,v tr r =tS +tF diF /dt Qr r =QS +QF IF tS QS Ir r m tr r tF 10% Ir r m QF dir r /dt 90% Ir r m t VR Figure C. Definition of diodes switching characteristics τ1 τ2 r1 r2 τn rn Tj (t) p(t) r1 r2 rn Figure A. Definition of switching times TC Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Figure B. Definition of switching losses Power Semiconductors 14 Rev. 2.1 Sep 08 ® nd TrenchStop 2 IKW15N120T2 generation Series Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors 15 Rev. 2.1 Sep 08