IRF 30EPH06

Bulletin PD-20620 rev. D 08/02
30EPH06
Hyperfast Rectifier
Features
•
•
•
•
•
trr = 28ns typ.
IF(AV) = 30Amp
VR = 600V
Hyperfastfast Recovery Time
Low Forward Voltage Drop
Low Leakage Current
175°C Operating Junction Temperature
Single Diode Device
Description/ Applications
State of the art Hyperfast recovery rectifiers designed with optimized performance of forward voltage drop,
Hyperfast recover time, and soft recovery.
The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness
and reliability characteristics.
These devices are intended for use in PFC Boost stage in the AC-DC section of SMPS, inverters or as freewheeling
diodes.
The IR extremely optimized stored charge and low recovery current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
Absolute Maximum Ratings
Parameters
Max
Units
VRRM
Peak Repetitive Reverse Voltage
600
V
IF(AV)
Average Rectifier Forward Current
@ TC = 116°C
30
A
IFSM
Non Repetitive Peak Surge Current
@ TJ = 25°C
300
TJ, TSTG
Operating Junction and Storage Temperatures
- 65 to 175
°C
Case Styles
30EPH06
BASE
COMMON
CATHODE
2
1
CATHODE
3
ANODE
TO247
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1
30EPH06
Bulletin PD-20620 rev. D 08/02
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameters
VBR, Vr
Breakdown Voltage,
Blocking Voltage
VF
IR
Min Typ Max Units Test Conditions
600
-
-
V
IR = 100µA
Forward Voltage
-
2.0
2.6
V
IF = 30A, TJ = 25°C
-
1.34 1.75
V
IF = 30A, TJ = 150°C
Reverse Leakage Current
-
0.3
50
µA
VR = VR Rated
-
60
500
µA
TJ = 150°C, VR = VR Rated
CT
Junction Capacitance
-
33
-
pF
VR = 600V
LS
Series Inductance
-
3.5
-
nH
Measured lead to lead 5mm from package body
Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified)
Parameters
trr
Min Typ Max Units Test Conditions
Reverse Recovery Time
-
28
35
-
31
-
TJ = 25°C
IF = 30A
77
-
TJ = 125°C
VR = 200V
-
IRRM
Peak Recovery Current
-
3.5
-
7.7
-
Qrr
Reverse Recovery Charge
-
65
-
-
345
-
ns
IF = 1.0A, diF/dt = 50A/µs, VR = 30V
A
TJ = 25°C
nC
TJ = 25°C
diF /dt = 200A/µs
TJ = 125°C
TJ = 125°C
Thermal - Mechanical Characteristics
Parameters
Min
Typ
Max
TJ
Max. Junction Temperature Range
- 65
-
175
TStg
Max. Storage Temperature Range
- 65
-
175
RthJC
Thermal Resistance, Junction to Case
Per Leg
-
0.5
0.9
RthJA !
Thermal Resistance, Junction to Ambient
Per Leg
-
-
70
RthCS"
Thermal Resistance, Case to Heatsink
-
0.4
-
Wt
Weight
-
6.0
-
g
-
0.22
-
(oz)
Mounting Torque
Units
°C
°C/W
6.0
-
12
Kg-cm
5.0
-
10
lbf.in
! Typical Socket Mount
"#Mounting Surface, Flat, Smooth and Greased
2
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30EPH06
Bulletin PD-20620 rev. D 08/02
1000
Reverse Current - I R (µA)
Instantaneous Forward Current - I F (A)
1000
100
Tj = 175˚C
150˚C
100
125˚C
10
100˚C
1
0.1
25˚C
0.01
0.001
0.0001
0
100
200
300
400
500
600
Reverse Voltage - VR (V)
Fig. 2 - Typical Values Of Reverse Current
Vs. Reverse Voltage
Junction Capacitance - C T (pF)
1000
T = 175˚C
J
10
T = 150˚C
J
T = 25˚C
J
1
0
0.5
1
1.5
2
2.5
3
3.5
T J = 25˚C
100
10
0
100
200
300
400
500
600
Forward Voltage Drop - VFM (V)
Reverse Voltage - VR (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
Thermal Impedance Z thJC (°C/W)
1
0.1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
0.01
0.001
0.00001
PDM
t1
Single Pulse
(Thermal Resistance)
t2
Notes:
1. Duty factor D = t1/ t2
2. Peak Tj = Pdm x ZthJC + Tc
0.0001
0.001
0.01
0.1
t1, Rectangular Pulse Duration (Seconds)
1
10
Fig. 4 - Max. Thermal Impedance Z thJC Characteristics
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3
30EPH06
Bulletin PD-20620 rev. D 08/02
90
Average Power Loss ( Watts )
Allowable Case Temperature (°C)
180
160
DC
140
120
Square wave (D = 0.50)
Rated Vr applied
100
see note (3)
80
RMS Limit
70
60
DC
50
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
40
30
20
10
0
80
0
0
5 10 15 20 25 30 35 40 45
Average Forward Current - IF(AV) (A)
Fig. 5 - Max. Allowable Case Temperature
Vs. Average Forward Current
5 10 15 20 25 30 35 40 45
Average Forward Current - IF(AV) (A)
Fig. 6 - Forward Power Loss Characteristics
1200
90
V R = 200V
T J = 125˚C
T J = 25˚C
IF = 30 A
IF = 15 A
80
1000
70
800
Qrr ( nC )
trr ( ns )
60
50
40
IF = 30 A
IF = 15 A
600
400
30
20
200
10
V R = 200V
T J = 125˚C
T J = 25˚C
0
100
1000
di F /dt (A/µs )
Fig. 7 - Typical Reverse Recovery vs. di F /dt
0
100
1000
di F /dt (A/µs )
Fig. 8 - Typical Stored Charge vs. di F /dt
(3) Formula used: TC = TJ - (Pd + PdREV) x RthJC ;
Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 6);
PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = rated VR
4
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30EPH06
Bulletin PD-20620 rev. D 08/02
Reverse Recovery Circuit
VR = 200V
0.01 Ω
L = 70µH
D.U.T.
diF /dt
dif/dt
ADJUST
D
IRFP250
G
S
Fig. 9- Reverse Recovery Parameter Test Circuit
3
trr
IF
tb
ta
0
2
Q rr
I RRM
4
0.5 I RRM
di(rec)M/dt
5
0.75 I RRM
1
diFf /dt
1. diF/dt - Rate of change of current through zero
crossing
2. IRRM - Peak reverse recovery current
3. trr - Reverse recovery time measured from zero
crossing point of negative going IF to point where
a line passing through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current
4. Qrr - Area under curve defined by t rr
and IRRM
t rr x I RRM
Q rr =
2
5. di (rec) M / dt - Peak rate of change of
current during t b portion of t rr
Fig. 10 - Reverse Recovery Waveform and Definitions
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30EPH06
Bulletin PD-20620 rev. D 08/02
Outline Table
3.65 (0.144)
DIA.
3.55 (0.139)
15.90 (0.626)
15.30 (0.602)
5.30 (0.209)
4.70 (0.185)
2.5 (0.098)
1.5 (0.059)
5.70 (0.225)
5.30 (0.208)
BASE
COMMON
CATHODE
2
20.30 (0.800)
19.70 (0.775)
5.50 (0.217)
1
4.50 (0.177)
(2 PLCS.)
3
1
CATHODE
14.80 (0.583)
14.20 (0.559)
1.40 (0.056)
1.00 (0.039)
3
ANODE
4.30 (0.170)
3.70 (0.145)
2.20 (0.087)
MAX.
2.40 (0.095)
MAX.
0.80 (0.032)
0.40 (0.213)
10.94 (0.430)
10.86 (0.427)
Conforms to JEDEC Outline TO-247
Dimensions in millimeters and (inches)
Ordering Information Table
Device Code
30
E
P
H
06
1
2
3
4
5
1
-
Current Rating (30 = 30A)
2
-
E
= Single Diode
3
-
P
= TO-247
4
-
H
= HyperFast Recovery
5
-
Voltage Rating (06 = 600V)
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information 08/02
6
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