IRF IRGP4062DPBF

PD - 97190
IRGB4062DPbF
IRGP4062DPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
•
•
•
•
•
•
•
•
•
•
Low VCE (ON) Trench IGBT Technology
Low switching losses
Maximum Junction temperature 175 °C
5 µS short circuit SOA
Square RBSOA
100% of the parts tested for 4X rated current (ILM)
Positive VCE (ON) Temperature co-efficient
Ultra fast soft Recovery Co-Pak Diode
Tight parameter distribution
Lead Free Package
C
VCES = 600V
IC = 24A, TC = 100°C
tSC ≥ 5µs, TJ(max) = 175°C
G
VCE(on) typ. = 1.65V
E
n-channel
C
Benefits
• High Efficiency in a wide range of applications
• Suitable for a wide range of switching frequencies due to
Low VCE (ON) and Low Switching losses
• Rugged transient Performance for increased reliability
• Excellent Current sharing in parallel operation
• Low EMI
C
E
C
G
E
C
G
TO-220AB
G
Gate
TO-247AC
C
Collector
E
Emitter
Absolute Maximum Ratings
Parameter
Max.
Units
V
VCES
Collector-to-Emitter Voltage
600
IC @ TC = 25°C
Continuous Collector Current
48
IC @ TC = 100°C
Continuous Collector Current
24
ICM
ILM
Pulse Collector Current
Clamped Inductive Load Current
IF @ TC = 25°C
Diode Continous Forward Current
IF @ TC = 100°C
IFM
Diode Continous Forward Current
Diode Maximum Forward Current
VGE
Continuous Gate-to-Emitter Voltage
±20
Transient Gate-to-Emitter Voltage
±30
PD @ TC = 25°C
Maximum Power Dissipation
250
PD @ TC = 100°C
Maximum Power Dissipation
125
TJ
Operating Junction and
TSTG
Storage Temperature Range
96
c
96
A
48
24
e
96
V
W
-55 to +175
°C
Soldering Temperature, for 10 sec.
300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw
10 lbf·in (1.1 N·m)
Thermal Resistance
Min.
Typ.
Max.
RθJC (IGBT)
Thermal Resistance Junction-to-Case-(each IGBT) TO-220AB
Parameter
–––
–––
0.60
RθJC (Diode)
Thermal Resistance Junction-to-Case-(each Diode) TO-220AB
–––
–––
1.53
RθJC (IGBT)
Thermal Resistance Junction-to-Case-(each IGBT) TO-247AC
–––
–––
0.65
RθJC (Diode)
Thermal Resistance Junction-to-Case-(each Diode) TO-247AC
–––
–––
1.62
RθCS
Thermal Resistance, Case-to-Sink (flat, greased surface)
–––
0.50
–––
RθJA
Thermal Resistance, Junction-to-Ambient (typical socket mount)
–––
80
–––
1
Units
°C/W
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02/24/06
IRGB/P4062DPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Min.
Typ.
V(BR)CES
Collector-to-Emitter Breakdown Voltage
Parameter
600
—
—
∆V(BR)CES/∆TJ
Temperature Coeff. of Breakdown Voltage
—
0.30
—
—
1.60
1.95
—
2.03
—
—
2.04
—
VCE(on)
Collector-to-Emitter Saturation Voltage
Max. Units
V
Conditions
VGE = 0V, IC = 100µA
V
IC = 24A, VGE = 15V, TJ = 150°C
4.0
—
6.5
Threshold Voltage temp. coefficient
—
-18
—
gfe
ICES
Forward Transconductance
—
17
—
Collector-to-Emitter Leakage Current
—
2.0
25
µA
VGE = 0V, VCE = 600V
—
775
—
VGE = 0V, VCE = 600V, TJ = 175°C
2.6
V
IF = 24A
IGES
Gate-to-Emitter Leakage Current
1.80
—
1.28
—
—
—
±100
9,10,11
VCE = VGE, IC = 700µA
Gate Threshold Voltage
—
CT6
5,6,7
IC = 24A, VGE = 15V, TJ = 175°C
VGE(th)
Diode Forward Voltage Drop
CT6
V/°C VGE = 0V, IC = 1mA (25°C-175°C)
IC = 24A, VGE = 15V, TJ = 25°C
∆VGE(th)/∆TJ
VFM
Ref.Fig
f
V
9, 10,
mV/°C VCE = VGE, IC = 1.0mA (25°C - 175°C)
S VCE = 50V, IC = 24A, PW = 80µs
11, 12
8
IF = 24A, TJ = 175°C
nA
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Min.
Typ.
Qg
Total Gate Charge (turn-on)
Parameter
—
50
Max. Units
75
Qge
Gate-to-Emitter Charge (turn-on)
—
13
20
Qgc
Gate-to-Collector Charge (turn-on)
—
21
31
Eon
Turn-On Switching Loss
—
115
201
Eoff
Turn-Off Switching Loss
—
600
700
Etotal
Total Switching Loss
—
715
901
td(on)
Turn-On delay time
—
41
53
tr
Rise time
—
22
31
Conditions
Ref.Fig
IC = 24A
nC
24
VGE = 15V
CT1
VCC = 400V
IC = 24A, VCC = 400V, VGE = 15V
µJ
CT4
RG = 10Ω, L = 200µH, LS = 150nH, TJ = 25°C
Energy losses include tail & diode reverse recovery
IC = 24A, VCC = 400V, VGE = 15V
ns
CT4
RG = 10Ω, L = 200µH, LS = 150nH, TJ = 25°C
td(off)
Turn-Off delay time
—
104
115
tf
Fall time
—
29
41
Eon
Turn-On Switching Loss
—
420
—
IC = 24A, VCC = 400V, VGE=15V
—
RG=10Ω, L=100µH, LS=150nH, TJ = 175°C
f
Eoff
Turn-Off Switching Loss
—
840
Etotal
Total Switching Loss
—
1260
—
Energy losses include tail & diode reverse recovery
td(on)
Turn-On delay time
—
40
—
IC = 24A, VCC = 400V, VGE = 15V
tr
Rise time
—
24
—
td(off)
Turn-Off delay time
—
125
—
tf
Fall time
—
39
—
Cies
Input Capacitance
—
1490
—
Coes
Output Capacitance
—
129
—
VCC = 30V
Cres
Reverse Transfer Capacitance
—
45
—
f = 1.0Mhz
TJ = 175°C, IC = 96A
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
µJ
ns
13, 15
CT4
WF1, WF2
14, 16
RG = 10Ω, L = 200µH, LS = 150nH
CT4
TJ = 175°C
WF1
WF2
pF
VGE = 0V
23
4
VCC = 480V, Vp =600V
CT2
Rg = 10Ω, VGE = +15V to 0V
SCSOA
Short Circuit Safe Operating Area
5
—
—
µs
VCC = 400V, Vp =600V
22, CT3
Rg = 10Ω, VGE = +15V to 0V
Erec
trr
Reverse Recovery Energy of the Diode
—
Diode Reverse Recovery Time
—
Irr
Peak Reverse Recovery Current
—
WF4
—
µJ
TJ = 175°C
89
—
ns
VCC = 400V, IF = 24A
37
—
A
VGE = 15V, Rg = 10Ω, L =200µH, Ls = 150nH
621
17, 18, 19
20, 21
WF3
Notes:
 VCC = 80% (VCES), VGE = 20V, L = 100µH, RG = 10Ω.
‚ This is only applied to TO-220AB package.
ƒ Pulse width limited by max. junction temperature.
„ Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
2
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IRGB/P4062DPbF
50
300
45
250
40
35
200
Ptot (W)
IC (A)
30
25
20
150
100
15
10
50
5
0
0
0
20
40
60
80 100 120 140 160 180
0
20
40
60
80 100 120 140 160 180
T C (°C)
T C (°C)
Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
Fig. 2 - Power Dissipation vs. Case
Temperature
1000
1000
100
100
IC (A)
IC (A)
10µsec
10
100µsec
1
10
1msec
Tc = 25°C
Tj = 175°C
Single Pulse
DC
0.1
1
1
10
100
1000
10000
10
100
VCE (V)
VCE (V)
Fig. 3 - Forward SOA
TC = 25°C, TJ ≤ 175°C; VGE =15V
Fig. 4 - Reverse Bias SOA
TJ = 175°C; VGE =15V
90
90
80
80
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
ICE (A)
60
50
70
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
60
ICE (A)
70
40
50
40
30
30
20
20
10
10
0
0
0
1
2
3
4
VCE (V)
5
6
7
Fig. 5 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80µs
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1000
8
0
1
2
3
4
5
6
7
8
VCE (V)
Fig. 6 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 80µs
3
IRGB/P4062DPbF
90
120
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
80
70
80
50
IF (A)
ICE (A)
60
100
40
30
-40°c
25°C
175°C
60
40
20
20
10
0
0
0
1
2
3
4
5
6
7
8
0.0
1.0
Fig. 8 - Typ. Diode Forward Characteristics
tp = 80µs
20
20
18
18
16
16
14
14
ICE = 12A
VCE (V)
VCE (V)
Fig. 7 - Typ. IGBT Output Characteristics
TJ = 175°C; tp = 80µs
ICE = 24A
10
ICE = 48A
8
3.0
VF (V)
VCE (V)
12
2.0
12
10
ICE = 48A
8
6
6
4
4
2
2
0
ICE = 12A
ICE = 24A
0
5
10
15
20
5
10
VGE (V)
15
20
VGE (V)
Fig. 10 - Typical VCE vs. VGE
TJ = 25°C
Fig. 9 - Typical VCE vs. VGE
TJ = -40°C
120
20
18
100
16
T J = 25°C
TJ = 175°C
80
12
ICE = 12A
ICE (A)
VCE (V)
14
ICE = 24A
ICE = 48A
10
8
60
40
6
4
20
2
0
0
5
10
15
VGE (V)
Fig. 11 - Typical VCE vs. VGE
TJ = 175°C
4
20
0
5
10
15
VGE (V)
Fig. 12 - Typ. Transfer Characteristics
VCE = 50V; tp = 10µs
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IRGB/P4062DPbF
1800
1000
1600
1400
Energy (µJ)
1200
Swiching Time (ns)
tdOFF
EOFF
1000
800
EON
600
100
tdON
tF
10
tR
400
200
0
1
0
10
20
30
40
50
60
10
20
30
50
IC (A)
IC (A)
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 175°C; L = 200µH; VCE = 400V, RG = 10Ω; VGE = 15V
Fig. 14 - Typ. Switching Time vs. IC
TJ = 175°C; L = 200µH; VCE = 400V, RG = 10Ω; VGE = 15V
1600
1000
1400
Swiching Time (ns)
EOFF
1200
Energy (µJ)
40
1000
EON
800
600
tdOFF
100
tdON
400
tF
200
tR
0
10
0
25
50
75
100
125
0
25
50
75
100
125
RG (Ω)
Rg (Ω)
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 200µH; VCE = 400V, ICE = 24A; VGE = 15V
Fig. 16 - Typ. Switching Time vs. RG
TJ = 175°C; L = 200µH; VCE = 400V, ICE = 24A; VGE = 15V
40
45
RG = 10Ω
40
35
35
30
RG = 22Ω
IRR (A)
IRR (A)
30
25
RG = 47Ω
20
20
RG = 100Ω
15
15
10
10
5
0
10
20
30
40
50
IF (A)
Fig. 17 - Typ. Diode IRR vs. IF
TJ = 175°C
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25
60
0
25
50
75
100
125
RG (Ω)
Fig. 18 - Typ. Diode IRR vs. RG
TJ = 175°C
5
IRGB/P4062DPbF
45
4000
40
3500
35
10Ω
3000
22Ω
QRR (µC)
30
IRR (A)
24A
25
20
2500
47Ω
12A
100Ω
2000
1500
15
6.0A
1000
10
500
5
0
500
1000
0
1500
500
Fig. 20 - Typ. Diode QRR vs. diF/dt
VCC = 400V; VGE = 15V; TJ = 175°C
Fig. 19 - Typ. Diode IRR vs. diF/dt
VCC = 400V; VGE = 15V; IF = 24A; TJ = 175°C
1000
Time (µs)
RG = 47Ω
RG = 10Ω
RG = 100Ω
400
200
16
280
14
240
12
200
10
160
8
120
6
80
40
4
0
0
10
20
30
40
50
8
60
14
16
18
16
VGE, Gate-to-Emitter Voltage (V)
Capacitance (pF)
12
Fig. 22 - VGE vs. Short Circuit Time
VCC = 400V; TC = 25°C
Fig. 21 - Typ. Diode ERR vs. IF
TJ = 175°C
Cies
1000
Coes
100
Cres
10
V CES = 300V
V CES = 400V
14
12
10
8
6
4
2
0
0
20
40
60
80
VCE (V)
Fig. 23 - Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
6
10
VGE (V)
IF (A)
10000
Current (A)
Energy (µJ)
800
RG = 22Ω
1500
diF /dt (A/µs)
diF /dt (A/µs)
600
1000
100
0
5 10 15 20 25 30 35 40 45 50 55
Q G, Total Gate Charge (nC)
Fig. 24 - Typical Gate Charge vs. VGE
ICE = 24A; L = 600µH
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IRGB/P4062DPbF
1
Thermal Response ( Z thJC )
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
0.01
τJ
R1
R1
τJ
τ1
τC
τ2
τ1
τ
Ri (°C/W) τi (sec)
0.2329 0.000234
0.3631
τ2
0.007009
Ci= τi/Ri
Ci i/Ri
SINGLE PULSE
( THERMAL RESPONSE )
0.001
R2
R2
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 23. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) TO-220AB
Thermal Response ( Z thJC )
10
1
0.1
0.01
D = 0.50
0.20
0.10
0.05
0.02
0.01
τJ
R1
R1
τJ
τ1
τ1
R2
R2
τ2
τ3
τ2
Ci= τi/Ri
Ci i/Ri
0.001
0.0001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
R3
R3
τC
τ
τ3
Ri (°C/W) τi (sec)
0.476
0.000763
0.647
0.003028
0.406
0.023686
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 24. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) TO-220AB
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7
IRGB/P4062DPbF
1
Thermal Response ( Z thJC )
D = 0.50
0.20
0.1
0.10
0.05
τJ
0.02
0.01
R1
R1
τJ
τ1
0.01
R2
R2
τC
τ2
τ1
τ2
Ci= τi/Ri
Ci i/Ri
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
Ri (°C/W) τi (sec)
0.2782 0.000311
0.3715 0.006347
τ
1E-005
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 23. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) TO-247AC
Thermal Response ( Z thJC )
10
1
0.1
D = 0.50
0.20
0.10
0.05
0.02
0.01
τJ
0.01
R1
R1
τJ
τ1
τ1
R2
R2
τ2
τ3
τ2
Ci= τi/Ri
Ci i/Ri
0.001
0.0001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
R3
R3
τC
τ
τ3
Ri (°C/W) τi (sec)
0.693
0.001222
0.621
0.005254
0.307
0.038140
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 24. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) TO-247AC
8
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IRGB/P4062DPbF
L
L
VC C
D UT
0
80 V
DU T
4 80V
Rg
1K
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.2 - RBSOA Circuit
d io d e clamp /
DU T
4x
DC
L
- 5V
360V
DU T /
D RIVER
DUT
VCC
Rg
Fig.C.T.3 - S.C. SOA Circuit
R=
Fig.C.T.4 - Switching Loss Circuit
VCC
ICM
C force
400µH
D1
10K
C sense
DUT
VCC
G force
DUT
0.0075µ
Rg
E sense
E force
Fig.C.T.5 - Resistive Load Circuit
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Fig.C.T.6 - BVCES Filter Circuit
9
IRGB/P4062DPbF
500
25
500
50
400
20
400
40
300
15
300
tf
90% ICE
10
5% ICE
100
5
200
30
90% test
100
5% VCE
0
0.50
1.00
1.50
0
-100
11.70
11.80
11.90
QRR
500
250
400
200
tRR
VCE
300
150
VCE (V)
I RR (A)
5
0
-5
-10
-10
12.10
Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 175°C using Fig. CT.4
25
10
12.00
Time (µs)
Fig. WF1 - Typ. Turn-off Loss Waveform
@ TJ = 175°C using Fig. CT.4
15
10
EON
-5
2.00
Time(µs)
20
10% test
0
EOFF Loss
0.00
20
5% VCE
0
-100
-0.50
TEST
C
10%
Peak
IRR
Peak
IRR
-15
ICE
200
100
100
50
0
I CE (A)
200
VCE (V)
VCE (V)
tr
0
-20
-25
-0.05
10
0.05
0.15
-100
-5.00
0.00
5.00
-50
10.00
time (µS)
time (µS)
Fig. WF3 - Typ. Diode Recovery Waveform
@ TJ = 175°C using Fig. CT.4
Fig. WF4 - Typ. S.C. Waveform
@ TJ = 25°C using Fig. CT.3
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IRGB/P4062DPbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
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TO-220AB package is not recommended for Surface Mount Application.
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IRGB/P4062DPbF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
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TO-247AC package is not recommended for Surface Mount Application.
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 02/06
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