PD-94079 IRF7807VD2 FETKY™ MOSFET / SCHOTTKY DIODE • Co-Pack N-channel HEXFET Power MOSFET and Schottky Diode • Ideal for Synchronous Rectifiers in DC-DC Converters Up to 5A Output • Low Conduction Losses • Low Switching Losses • Low Vf Schottky Rectifier A/S A/S A/S G Description The FETKY™ family of Co-Pack HEXFETMOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. HEXFET power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier’s low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics. The SO8 package is designed for vapor phase, infrared or wave soldering techniques. 1 8 K/D 2 7 K/D 3 6 4 5 K/D K/D D Top View SO-8 DEVICE CHARACTERISTICSU IRF7807VD2 RDS(on) 17mΩ QG 9.5nC Qsw 3.4nC Qoss 12nC Absolute Maximum Ratings Parameter Symbol Max. Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 ID 8.3 Continuous Drain or Source 25°C Current (VGS ≥ 4.5V) 70°C Pulsed Drain CurrentQ Power DissipationS 25°C 6.6 IDM 66 PD 2.5 70°C Schottky and Body Diode 25°C Average ForwardCurrentT 70°C 1.6 IF (AV) 3.7 Units V A W A 2.3 TJ, TSTG –55 to 150 °C Parameter Maximum Junction-to-AmbientS RθJA Max. 50 Units °C/W Maximum Junction-to-Lead RθJL 20 °C/W Junction & Storage Temperature Range Thermal Resistance www.irf.com 1 03/05/01 IRF7807VD2 Electrical Characteristics Parameter Min Typ Max Units 30 – – V 17 25 mΩ Drain-to-Source Breakdown Voltage BVDSS Static Drain-Source on Resistance RDS(on) Gate Threshold Voltage VGS(th) Drain-Source Leakage Current IDSS Gate-Source Leakage Current* IGSS Total Gate Charge* QG 9.5 Pre-Vth Gate-Source Charge QGS1 2.3 Post-Vth Gate-Source Charge QGS2 1.0 Gate to Drain Charge QGD 2.4 Switch Chg(Qgs2 + Qgd) Qsw 3.4 5.2 16.8 1.0 Current* Conditions VGS = 0V, ID = 250µA VGS = 4.5V, ID = 7.0AR V VDS = VGS ,ID = 250µA 50 µA VDS = 24V, VGS = 0 6.0 mA VDS = 24V, VGS = 0, ±100 nA Tj = 100°C Output Charge* Qoss 12 RG 2.0 Turn-on Delay Time td (on) 6.3 Rise Time tr 1.2 Turn-off Delay Time td tf VGS =4.5V, ID=7.0A VDS = 16V Gate Resistance Fall Time 14 VGS = ±20V nC VDS = 16V, VGS = 0 Ω VDD = 16V, ID = 7.0A ns 11 (off) VGS = 5V, RG= 2Ω Resistive Load 2.2 Schottky Diode & Body Diode Ratings and Characteristics Parameter Diode Forward Voltage VSD Reverse Recovery Time trr Reverse Recovery Charge Forward Turn-On Time Qrr ton Notes: 2 Min Typ 36 41 Max 0.54 0.43 Units Conditions V Tj = 25°C, Is = 3.0A, VGS =0VR Tj = 125°C, Is = 3.0A, VGS =0VR ns Tj = 25°C, Is = 7.0A, VDS = 16V nC di/dt = 100A/µs Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Q Repetitive rating; pulse width limited by max. junction temperature. R Pulse width ≤ 400 µs; duty cycle ≤ 2%. S When mounted on 1 inch square copper board T 50% Duty Cycle, Rectangular UTypical values of RDS(on) measured at VGS = 4.5V, QG, QSW and QOSS measured at VGS = 5.0V, IF = 7.0A. * Device are 100% tested to these parameters. www.irf.com IRF7807VD2 Power MOSFET Selection for DC/DC Converters 4 Drain Current Control FET t2 t3 t1 VGTH t0 2 QGD Ploss = Pconduction+ Pswitching+ Pdrive+ Poutput Gate Voltage QGS2 Power losses in the control switch Q1 are given by; 1 QGS1 Special attention has been given to the power losses in the switching elements of the circuit - Q1 and Q2. Power losses in the high side switch Q1, also called the Control FET, are impacted by the Rds(on) of the MOSFET, but these conduction losses are only about one half of the total losses. Drain Voltage This can be expanded and approximated by; Ploss = (Irms 2 × Rds(on ) ) Q Q + I × gd × Vin × f + I × gs2 × Vin × f ig ig + (Qg × Vg × f ) + Qoss × Vin × f 2 This simplified loss equation includes the terms Qgs2 and Qoss which are new to Power MOSFET data sheets. Qgs2 is a sub element of traditional gate-source charge that is included in all MOSFET data sheets. The importance of splitting this gate-source charge into two sub elements, Qgs1 and Qgs2, can be seen from Fig 1. Qgs2 indicates the charge that must be supplied by the gate driver between the time that the threshold voltage has been reached (t1) and the time the drain current rises to Idmax (t2) at which time the drain voltage begins to change. Minimizing Qgs2 is a critical factor in reducing switching losses in Q1. Qoss is the charge that must be supplied to the output capacitance of the MOSFET during every switching cycle. Figure 2 shows how Qoss is formed by the parallel combination of the voltage dependant (nonlinear) capacitance’s Cds and Cdg when multiplied by the power supply input buss voltage. www.irf.com Figure 1: Typical MOSFET switching waveform Synchronous FET The power loss equation for Q2 is approximated by; * Ploss = Pconduction + Pdrive + Poutput ( 2 Ploss = Irms × Rds(on) ) + (Qg × Vg × f ) Q + oss × Vin × f + (Qrr × Vin × f ) 2 *dissipated primarily in Q1. 3 IRF7807VD2 For the synchronous MOSFET Q2, Rds(on) is an important characteristic; however, once again the importance of gate charge must not be overlooked since it impacts three critical areas. Under light load the MOSFET must still be turned on and off by the control IC so the gate drive losses become much more significant. Secondly, the output charge Qoss and reverse recovery charge Qrr both generate losses that are transfered to Q1 and increase the dissipation in that device. Thirdly, gate charge will impact the MOSFETs’ susceptibility to Cdv/dt turn on. The drain of Q2 is connected to the switching node of the converter and therefore sees transitions between ground and Vin. As Q1 turns on and off there is a rate of change of drain voltage dV/dt which is capacitively coupled to the gate of Q2 and can induce a voltage spike on the gate that is sufficient to turn the MOSFET on, resulting in shoot-through current . The ratio of Qgd/Qgs1 must be minimized to reduce the potential for Cdv/dt turn on. Spice model for IRF7807V can be downloaded in machine readable format at www.irf.com. Figure 2: Qoss Characteristic Typical Mobile PC Application The performance of these new devices has been tested in circuit and correlates well with performance predictions generated by the system models. An advantage of this new technology platform is that the MOSFETs it produces are suitable for both control FET and synchronous FET applications. This has been demonstrated with the 3.3V and 5V converters. (Fig 3 and Fig 4). In these applications the same MOSFET IRF7807V was used for both the control FET (Q1) and the synchronous FET (Q2). This provides a highly effective cost/performance solution. 5.0V Supply : Q1=Q2= IRF7807V 93 95 92 94 91 93 90 92 Efficiency (%) Efficiency (%) 3.3V Supply : Q1=Q2= IRF7807V 89 88 87 86 Vin=24V 85 Vin=14V 84 Vin=10V 90 Vin=24V 89 Vin=14V 88 Vin=10V 87 86 83 1 2 3 Load current (A) Figure 3 4 91 4 5 1 2 3 4 5 Load current (A) Figure 4 www.irf.com R DS(on) , Drain-to-Source On Resistance (Normalized) 2.0 RDS(on) , Drain-to -Source On Resistance ( Ω ) IRF7807VD2 ID = 7.0A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 4.5V 0 20 40 60 0.030 0.025 0.020 ID = 7.0A 0.015 0.010 80 100 120 140 160 2.0 TJ , Junction Temperature ( °C) 6.0 8.0 10.0 12.0 14.0 16.0 VGS, Gate -to -Source Voltage (V) Fig 5. Normalized On-Resistance Vs. Temperature Fig 7. On-Resistance Vs. Gate Voltage 70 70 50 IS, Source-to-Drain Current (A) VGS TOP 4.5V 3.5V 3.0V 2.5V 2.0V BOTTOM 0.0V 60 IS, Source-to-Drain Current (A) 4.0 40 30 20 0.0 V 10 380µs PULSE WIDTH Tj = 25°C VGS 4.5V 3.5V 3.0V 2.5V 2.0V BOTTOM 0.0V TOP 60 50 40 30 20 O.OV 10 380µS PULSE WIDTH Tj = 150°C 0 0 0 0.2 0.4 0.6 0.8 VSD, Source-to-Drain Voltage (V) Fig 7. Typical Reverse Output Characteristics www.irf.com 1 0 0.2 0.4 0.6 0.8 1 VSD, Source-to-Drain Voltage (V) Fig 8. Typical Reverse Output Characteristics 5 IRF7807VD2 Thermal Response (Z thJA ) 100 D = 0.50 0.20 10 0.10 0.05 PDM 0.02 1 t1 0.01 t2 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.001 0.01 0.1 1 10 t1 , Rectangular Pulse Duration (sec) Figure 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient VGS , Gate-to-Source Voltage (V) 5 ID = 7.0A VDS = 16V 4 3 2 1 0 0 2 4 6 8 10 12 QG , Total Gate Charge (nC) Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage 6 www.irf.com IRF7807VD2 MOSFET , Body Diode & Schottky Diode Characteristics 100 100 Reverse Current - I R ( mA ) Tj = 150°C Tj = 125°C Instantaneous Forward Current - I F ( A ) Tj = 25°C 10 10 125°C 100°C 1 75°C 0.1 50°C 25°C 0.01 0.001 0 5 10 15 20 25 30 Reverse Voltage - V R (V) Fig. 12 - Typical Values of Reverse Current Vs. Reverse Voltage 1 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 Forward Voltage Drop - V SD ( V ) Fig. 11 - Typical Forward Voltage Drop Characteristics www.irf.com 7 IRF7807VD2 SO-8 Package Details D IM D -B - 5 8 7 5 A 6 5 H E -A - 1 2 3 e 6X 0.2 5 (.0 10 ) 4 M A M θ e1 K x 45 ° -C- 0 .10 (.00 4) B 8X 0 .25 (.01 0) A1 L 8X 6 C 8X M C A S B S M IN M AX .0532 .0688 1 .35 1 .75 .0040 .0098 0 .10 0 .25 B .014 .018 0 .36 0 .46 C .0 075 .0 098 0 .19 0.25 D .1 89 .1 96 4 .80 4.98 E .150 .157 3 .81 3 .99 e1 A M IL LIM E T E R S MAX A1 e θ IN C H E S M IN .050 B A S IC 1.2 7 B A S IC .025 B A S IC 0.6 35 B A S IC H .2 284 .2 440 K .011 .019 0 .28 5 .80 0 .48 6.20 L 0 .16 .050 0 .41 1.27 θ 0° 8° 0° 8° R E CO M M E ND E D F O O TP R IN T N O TE S : 0 .72 (.02 8 ) 8X 1 . D IM EN SIO N IN G AN D TO L ER A NC IN G P ER AN S I Y1 4.5 M -198 2. 2 . C O N T RO L LIN G D IM EN SIO N : IN C H . 3 . D IM EN SIO N S A RE SH O W N IN M ILLIM E TE R S (IN C HE S). 4 . O U T LIN E CO N F O RM S T O JED E C O U T LINE M S -0 12 AA . 5 D IM E NS IO N D O ES N O T IN C LU D E M O LD PR O T R US IO N S 6 .46 ( .25 5 ) 1 .78 (.07 0) 8X M O LD P R O TR U SIO NS N O T T O EXCE ED 0 .2 5 (.00 6). 6 D IM E NS IO N S IS T H E LE N G TH O F L EA D F O R SO L DE R IN G TO A SU B ST RA T E.. 1.27 ( .0 50 ) 3X SO-8 Part Marking 8 www.irf.com IRF7807VD2 SO-8 Tape and Reel T E R M IN A L N UM B E R 1 1 2 .3 ( .4 8 4 ) 1 1 .7 ( .4 6 1 ) 8 .1 ( .31 8 ) 7 .9 ( .31 2 ) F E E D D IRE C T IO N NOTES: 1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ). 3 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 . 3 30 .00 ( 12 .9 9 2 ) M A X. 1 4.4 0 ( .5 6 6 ) 1 2.4 0 ( .4 8 8 ) N O TES : 1 . CO N T R O L L IN G DIM E N S IO N : M IL L IME T E R . 2 . O UT L IN E C O N F O R M S T O E IA -4 8 1 & E IA -54 1 . This product has been designed and qualified for the commercial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 03/01 www.irf.com 9