NPN Silicon AF Transistors ● ● ● ● ● BCW 60 BCX 70 For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BCW 61, BCX 71 (PNP) Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 Package1) BCW 60 A BCW 60 B BCW 60 C BCW 60 D BCW 60 FF BCW 60 FN BCX 70 G BCX 70 H BCX 70 J BCX 70 K AAs ABs ACs ADs AFs ANs AGs AHs AJs AKs Q62702-C1517 Q62702-C1497 Q62702-C1476 Q62702-C1477 Q62702-C1529 Q62702-C1567 Q62702-C1539 Q62702-C1481 Q62702-C1552 Q62702-C1571 B SOT-23 1) E C For detailed information see chapter Package Outlines. Semiconductor Group 1 5.91 BCW 60 BCX 70 Maximum Ratings Parameter Symbol Unit BCW 60 Values BCW 60 FF BCX 70 V Collector-emitter voltage VCE0 32 32 45 Collector-base voltage VCB0 32 32 45 Emitter-base voltage VEB0 Collector current IC 100 Peak collector current ICM 200 Peak base current IBM 200 Total power dissipation, TS = 71 ˚C Ptot 330 mW Junction temperature Tj 150 ˚C Storage temperature range Tstg 5 mA – 65 … + 150 Thermal Resistance Junction - ambient1) Rth JA ≤ 310 Junction - soldering point Rth JS ≤ 240 1) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 2 K/W BCW 60 BCX 70 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. DC characteristics Collector-emitter breakdown voltage IC = 10 mA BCW 60, BCW 60 FF BCX 70 V(BR)CE0 Collector-base breakdown voltage IC = 10 µA BCW 60, BCW 60 FF BCX 70 V(BR)CB0 Emitter-base breakdown voltage IE = 1 µA V(BR)EB0 Collector cutoff current VCB = 32 V VCB = 45 V VCB = 32 V, TA = 150 ˚C VCB = 45 V, TA = 150 ˚C ICB0 BCW 60, BCW 60 FF BCX 70 BCW 60, BCW 60 FF BCX 70 Emitter cutoff current VEB = 4 V IEB0 DC current gain 1) IC = 10 µA, VCE = 5 V BCW 60 A, BCX 70 G BCW 60 B, BCX 70 H BCW 60 FF, BCW 60 C, BCX 70 J BCW 60 FN, BCW 60 D, BCX 70 K IC = 2 mA, VCE = 5 V BCW 60 A, BCX 70 G BCW 60 B, BCX 70 H BCW 60 FF, BCW 60 C, BCX 70 J BCW 60 FN, BCW 60 D, BCX 70 K IC = 50 mA, VCE = 1 V BCW 60 A, BCX 70 G BCW 60 B, BCX 70 H BCW 60 FF, BCW 60 C, BCX 70 J BCW 60 FN, BCW 60 D, BCX 70 K hFE 1) Pulse test: t ≤ 300 µs, D ≤ 2 %. Semiconductor Group 3 V 32 45 – – – – 32 45 – – – – 5 – – – – – – – – – – 20 20 20 20 nA nA µA µA – – 20 nA – 20 20 40 100 140 200 300 460 – – – – 120 180 250 380 170 250 350 500 220 310 460 630 50 70 90 100 – – – – – – – – BCW 60 BCX 70 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. – – 0.12 0.20 0.25 0.55 – – 0.70 0.83 0.85 1.05 – 0.55 – 0.52 0.65 0.78 – 0.75 – DC characteristics Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.25 mA IC = 50 mA, IB = 1.25 mA VCEsat Base-emitter saturation voltage1) IC = 10 mA, IB = 0.25 mA IC = 50 mA, IB = 1.25 mA VBEsat Base-emitter voltage IC = 10 µA, VCE = 5 V IC = 2 mA, VCE = 5 V IC = 50 mA, VCE = 1 V 1) VBE (on) V AC characteristics Transition frequency IC = 20 mA, VCE = 5 V, f = 100 MHz fT – 250 – MHz Output capacitance VCB = 10 V, f = 1 MHz Cobo – 3 – pF Input capacitance VEB = 0.5 V, f = 1 MHz Cibo – 8 – Short-circuit input impedance IC = 2 mA, VCE = 5 V, f = 1 kHz BCW 60 A, BCX 70 G BCW 60 B, BCX 70 H BCW 60 FF, BCW 60 C, BCX 70 J BCW 60 FN, BCW 60 D, BCX 70 K h11e Open-circuit reverse voltage transfer ratio IC = 2 mA, VCE = 5 V, f = 1 kHz BCW 60 A, BCX 70 G BCW 60 B, BCX 70 H BCW 60 FF, BCW 60 C, BCX 70 J BCW 60 FN, BCW 60 D, BCX 70 K h12e 1) – – – – 4 2.7 3.6 4.5 7.5 – – – – 10– 4 – – – Pulse test: t ≤ 300 µs, D ≤ 2 %. Semiconductor Group kΩ 1.5 2.0 2.0 3.0 – – – BCW 60 BCX 70 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. AC characteristics Short-circuit forward current transfer ratio IC = 2 mA, VCE = 5 V, f = 1 kHz BCW 60 A, BCX 70 G BCW 60 B, BCX 70 H BCW 60 FF, BCW 60 C, BCX 70 J BCW 60 FN, BCW 60 D, BCX 70 K h21e Open-circuit output admittance IC = 2 mA, VCE = 5 V, f = 1 kHz BCW 60 A, BCX 70 G BCW 60 B, BCX 70 H BCW 60 FF, BCW 60 C, BCX 70 J BCW 60 FN, BCW 60 D, BCX 70 K h22e Noise figure IC = 0.2 mA, VCE = 5 V, RS = 2 kΩ f = 1 kHz, ∆f = 200 Hz BCW 60 A to BCX 70 K BCW 60 FF, BCW 60 FN F Equivalent noise voltage IC = 0.2 mA, VCE = 5 V, RS = 2 kΩ f = 10 Hz … 50 Hz BCW 60 FF, BCW 60 FN Vn Semiconductor Group – – – – – – – – – µs – – – – 5 200 260 330 520 18 24 30 50 – – – – dB – – 2 1 – 2 – – 0.135 µV BCW 60 BCX 70 Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy Collector-base capacitance CCB0 = f (VCB0) Emitter-base capacitance CEB0 = f (VEB0) Permissible pulse load Ptot max/Ptot DC = f (tp) Transition frequency fT = f (IC) VCE = 5 V Semiconductor Group 6 BCW 60 BCX 70 Base-emitter saturation voltage IC = f (VBEsat) hFE = 40 Collector-emitter saturation voltage IC = f (VCEsat) hFE = 40 Collector current IC = f (VBE) VCE = 5 V DC current gain hFE = f (IC) VCE = 5 V Semiconductor Group 7 BCW 60 BCX 70 Collector cutoff current ICB0 = f (TA) h parameter he = f (IC) VCE = 5 V h parameter he = f (VCE) IC = 2 mA Noise figure F = f (VCE) IC = 0.2 mA, RS = 2 kΩ, f = 1 kHz Semiconductor Group 8 BCW 60 BCX 70 Noise figure F = f (f) IC = 0.2 mA, RS = 2 kΩ,VCE = 5 V Noise figure F = f (IC) VCE = 5 V, f = 120 Hz Noise figure F = f (IC) VCE = 5 V, f = 1 kHz Noise figure F = f (IC) VCE = 5 V, f = 10 kHz Semiconductor Group 9