BSP 170 P SIPMOS® Small-Signal-Transistor Product Summary Features • P-Channel • Enhancement mode V DS -60 V R DS(on),max 0.3 Ω ID -1.9 A • Avalanche rated • dv /dt rated PG-SOT-223 • Pb-free lead finishing; RoHS compliant Type Package Tape and reel information Marking Lead free Packing BSP 170 P PG-SOT-223 L6327: 1000pcs/reel BSP170 Yes Non Dry Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value Unit steady state Continuous drain current ID T A=25 °C -1.9 T A=70 °C -1.5 -7.6 Pulsed drain current I D,pulse T A=25 °C Avalanche energy, single pulse E AS I D=1.9 A, R GS=25 Ω Avalanche energy, periodic limited by E AR Tjmax Reverse diode dv /dt dv /dt Gate source voltage V GS Power dissipation P tot Operating and storage temperature T j, T stg ESD class mJ 0.18 I D=1.9 A, V DS=48 V, di /dt =-200 A/µs, T j,max=150 °C T A=25 °C JESD22-A114 (HBM) -6 kV/µs ±20 V 1.8 W -55 ... 150 °C 1A (250V to 500V) 260 °C Soldering temperature 55/150/56 IEC climatic category; DIN IEC 68-1 Rev 2.52 70 A page 1 2009-02-16 BSP 170 P Parameter Values Symbol Conditions Unit min. typ. max. - - 20 K/W minimal footprint - - 110 K/W 6 cm2 cooling area1) - - 70 Thermal characteristics Thermal resistance, junction -soldering point R thJS SMD version, device on PCB: R thJA Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=-250 µA -60 - - Gate threshold voltage V GS(th) V DS=V GS, I D=-250 µA -2.1 -3 -4 Zero gate voltage drain current I DSS V DS=-60 V, V GS=0 V, T j=25 °C - -0.1 -1 V DS=-60 V, V GS=0 V, T j=125 °C - -10 -100 V µA Gate-source leakage current I GSS V GS=-20 V, V DS=0 V - -10 -100 nA Drain-source on-state resistance R DS(on) V GS=-10 V, I D=-1.9 A - 239 300 mΩ Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=-1.9 A 1.3 2.6 - S 1) Device on 40mm*40mm*1.5 epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for drain connection. PCB is vertical without blown air. Rev 2.52 page 2 2009-02-16 BSP 170 P Parameter Values Symbol Conditions Unit min. typ. max. - 328 410 - 105 135 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance C rss - 38 48 Turn-on delay time t d(on) - 14 21 Rise time tr - 28 42 Turn-off delay time t d(off) - 92 138 Fall time tf - 60 90 Gate to source charge Q gs - -1.4 -1.9 Gate to drain charge Q gd - -4.9 -7.4 Gate charge total Qg - -10 -14 Gate plateau voltage V plateau - -4.34 - V - - -1.98 A - - -7.6 - -0.83 -1.1 V - 36 54 ns - 41 62 nC V GS=0 V, V DS=-25 V, f =1 MHz V DD=-30 V, V GS=10 V, I D=-1.9 A, R G=6 Ω pF ns Gate Charge Characteristics V DD=-48 V, I D=-1.9 A, V GS=0 to -10 V nC Reverse Diode Diode continuous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Rev 2.52 Q rr T A=25 °C V GS=0 V, I F=-1.9 A, T j=25 °C V R=30 V, I F=|I S|, di F/dt =100 A/µs page 3 2009-02-16 BSP 170 P 1 Power dissipation 2 Drain current P tot=f(T A) I D=f(T A); |V GS|≥10 V 2.1 1.8 1.8 1.5 1.5 -I D [A] P tot [W] 1.2 0.9 1.2 0.9 0.6 0.6 0.3 0.3 0 0 0 40 80 120 0 160 40 T A [°C] 80 120 160 T A [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T A=25 °C1); D =0 Z thJA=f(t p) parameter: t p parameter: D =t p/T 101 102 10 µs 100 µs limited by on-state resistance 0.5 1 ms 10 ms 0.2 101 100 100 ms -I D [A] Z thJS [K/W] 0.1 DC 0.02 10-1 100 10-2 10-1 0.1 1 10 100 10-5 0.01 10-4 single pulse 10-3 10-2 10-1 100 101 102 t p [s] -V DS [V] Rev 2.52 0.05 page 4 2009-02-16 BSP 170 P 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 7 1000 -7 V 900 -20 V 6 -10 V -6V 800 -5.5 V 5 700 R DS(on) [mΩ] -I D [A] -4 V 4 -5 V 3 -4.5 V 500 -5 V 400 -5.5 V -6 V 300 -4.5 V 2 600 -7 V -10 V 200 1 -20 V -4V 100 0 0 0 1 2 3 4 5 0 1 2 -V DS [V] 3 -I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 3 3.5 3 2.5 g fs [S] -I D [A] 2 2 1.5 1 1 0.5 125 °C 25 °C 0 0 0 1 2 3 4 5 Rev 2.52 0 0.5 1 1.5 2 2.5 -I D [A] -V GS [V] page 5 2009-02-16 BSP 170 P 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=-1.9 A; V GS=-10 V V GS(th)=f(T j); V GS=V DS; I D=-250 µA 600 550 5 500 450 max. 4 98 % 350 -V GS(th) [V] R DS(on) [mΩ] 400 300 250 typ. typ. 3 2 200 min. 150 1 100 50 0 0 -60 -20 20 60 100 140 -60 -20 20 T j [°C] 60 100 140 T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 103 101 150 °C, typ 25 °C, 98% Ciss 100 150 °C, 98% I F [A] C [pF] Coss 102 Crss 10-1 25 °C, typ 101 10-2 0 5 10 15 20 25 -V DS [V] Rev 2.52 0 0.5 1 1.5 2 2.5 3 -V SD [V] page 6 2009-02-16 BSP 170 P 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=-1.9 A pulsed parameter: T j(start) parameter: V DD 101 16 14 12 10 30 V 10 0 V GS [V] -I AV [A] 12 V 25 °C 100 °C 125 °C 48 V 8 6 4 2 10-1 0 100 101 102 103 104 t AV [µs] 0 5 10 15 Q gate [nC] 15 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=-250 µA 70 -V BR(DSS) [V] 65 60 55 50 -60 -20 20 60 100 140 T j [°C] Rev 2.52 page 7 2009-02-16 BSP 170 P Package Outline SOT-223: Outline Footprint Packaging Tape Operating and storage temperature Dimensions in mm Rev 2.52 page 8 2009-02-16 BSP 170 P Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2006. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev 2.52 page 9 2009-02-16