BSR92P SIPMOS® Small-Signal-Transistor Product Summary Features V DS • P-Channel -250 V 11 Ω -0.14 A R DS(on),max • Enhancement mode / Logic level ID • Avalanche rated • Pb-free lead plating; RoHS compliant PG-SC59 • Footprint compatible to SOT23 Type Package Tape and Reel Information Marking Lead free Packing BSR92P PG-SC59 L6327 = 3000 pcs. / reel LD Yes Non dry Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value Unit steady state Continuous drain current ID T A=25 °C -0.14 T A=70 °C -0.11 -0.56 Pulsed drain current I D,pulse T A=25 °C Avalanche energy, single pulse E AS I D=-0.14 A, R GS=25 Ω Gate source voltage V GS Power dissipation P tot Operating and storage temperature T j, T stg ESD class T C=25 °C JESD22-A114 (HBM) 24 mJ ±20 V 0.5 W -55 ... 150 °C 1A (250V to 500V) 260 °C Soldering temperature 55/150/56 IEC climatic category; DIN IEC 68-1 Rev 1.02 A page 1 2009-02-16 BSR92P Parameter Values Symbol Conditions Unit min. typ. max. - - 250 Thermal characteristics Thermal resistance, junction - ambient R thJA minimal footprint, steady state K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=-250 µA -250 - - Gate threshold voltage V GS(th) V DS=V GS, I D=-130 µA -2 -1.5 -1 Zero gate voltage drain current I DSS V DS=-250 V, V GS=0 V, T j=25 °C - -0.1 -1 V DS=-250 V, V GS=0 V, T j=150 °C - -10 -100 V GS=-20 V, V DS=0 V - -10 -100 V GS=-2.8 V, I D=-0.025 A - 11 20 V GS=-4.5 V, I D=0.13 A - 9 13 V GS=-10 V, I D=-0.14 A - 8 11 0.1 0.3 - Gate-source leakage current Drain-source on-state resistance Transconductance Rev 1.02 I GSS R DS(on) g fs |V DS|>2|I D|R DS(on)max, I D=-0.11 A page 2 V µA nA Ω S 2009-02-16 BSR92P Parameter Values Symbol Conditions Unit min. typ. max. - 82 109 - 12 16 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance C rss - 5 8 Turn-on delay time t d(on) - 6.4 9.0 Rise time tr - 6.3 9.0 Turn-off delay time t d(off) - 75.0 112 Fall time tf - 71.0 163 Gate to source charge Q gs - -0.2 -0.3 Gate to drain charge Q gd - -1.2 -1.8 Gate charge total Qg - -3.6 -4.8 Gate plateau voltage V plateau - -2.7 - V - - -0.14 A - - -0.56 - -0.8 -1.2 V - 66 - ns - 125 - nC V GS=0 V, V DS=-25 V, f =1 MHz V DD=-125 V, V GS=-10 V, I D=-0.14 A, R G=6 Ω pF ns Gate Charge Characteristics 2) V DD=-200 V, I D=0.14 A, V GS=0 to -10 V nC Reverse Diode Diode continuous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge 2) Rev 1.02 Q rr T C=25 °C V GS=0 V, I F=0.14 A, T j=25 °C V R=125 V, I F=|I S|, di F/dt =100 A/µs See figure 16 for gate charge parameter definition page 3 2009-02-16 BSR92P 1 Power dissipation 2 Drain current P tot=f(T C) I D=f(T C); |V GS|≥10 V 0.6 0.15 0.5 0.1 -I D [A] P tot [W] 0.4 0.3 0.2 0.05 0.1 0 0 0 40 80 120 160 0 40 T A [°C] 80 120 160 T A [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 100 103 limited by on-state resistance 100 µs 1 ms 0.5 102 10 ms 0.2 10-1 Z thJS [K/W] 0.1 -I D [A] 100 ms DC 0.05 10 1 0.02 0.01 single pulse 10-2 100 10-3 10 10-1 -1 10 0 10 1 10 2 10 3 -V DS [V] Rev 1.02 10-5 10-4 10-3 10-2 10-1 100 101 102 t p [s] page 4 2009-02-16 BSR92P 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 0.5 14 4.5 V 10 V -2.5 V 6V 0.4 -3 V 3.5 V 12 3V I D [A] R DS(on) [Ω] 0.3 0.2 10 -3.5 V -4.5 V -6 V 8 2.5 V -10 V 0.1 2V 0 6 0 1 2 3 4 5 0 0.1 V DS [V] 0.2 0.3 0.4 0.12 0.16 -I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 0.5 0.4 25 °C 150 °C 0.4 0.3 g fs [S] -I D [A] 0.3 0.2 0.2 0.1 0.1 0 0 0 1 2 3 4 -V GS [V] Rev 1.02 0.00 0.04 0.08 -I D [A] page 5 2009-02-16 BSR92P 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=-0.14 A; V GS=-10 V V GS(th)=f(T j); V GS=V DS; I D=-130 µA 2.5 30 25 2 min -V GS(th) [V] R DS(on) [mΩ] 20 15 98% typ 1.5 1 max 10 10V 0.5 5 0 0 -60 -40 -20 0 -60 20 40 60 80 100 120 140 160 -20 20 60 100 140 T j [°C] T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 1000 1 100 25 °C 0.1 150 °C I F [A] C [pF] Ciss Coss 10 0.01 25°C, 98% Crss 150°C, 98% 1 0.001 0 20 40 60 80 100 -V DS [V] Rev 1.02 0 0.4 0.8 1.2 1.6 -V SD [V] page 6 2009-02-16 BSR92P 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=-0.14 A pulsed parameter: T j(start) parameter: V DD 100 10 8 50 V 10-1 6 - VGS [V] -I AV [A] 25 °C 100 °C 125 V 4 200 V 125 °C 2 0 10-2 100 101 102 0 103 1 t AV [µs] 2 3 - Qgate [nC] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=-250 µA 300 V GS 290 Qg 280 -V BR(DSS) [V] 270 260 250 240 V g s(th) 230 220 Q g(th) 210 200 Q sw Q gs -60 -20 20 60 100 Q g ate Q gd 140 T j [°C] Rev 1.02 page 7 2009-02-16 BSR92P Package Outline SC-59: Outline Footprint Packaging Tape Dimensions in mm Rev 1.02 page 8 2009-02-16 BSR92P Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2006. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions o characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typica values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties o non-infringement of intellectual property rights of any third party Information For further information on technology, delivery terms and conditions and prices please contact your neares Infineon Technologies Office (www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev 1.02 page 9 2009-02-16