Silicon Discretes The BGA622 Silicon-Germanium Universal Low Noise Amplifier MMIC in 1800 - 2500 MHz Receiver Applications Application Note No. 069 Features • Versatile, easy-to-use LNA MMIC in 70 GHz ft SiGe technology 3 • 50 Ω matched output, pre-matched input • Integrated output DC blocking capacitor, 4 integrated RF choke on internal bias network • Low current consumption of 6 mA SOT-343 • “Shutdown” or “Sleep” mode • Unconditionally stable • Low external component count • Exceptional noise figure: 1.1 dB in a PC board at 2 GHz 2 1 Applications • Low Noise Amplifier for 800/900 MHz, GSM900, 900 MHz ISM, DCS1800, GPS, 1900 MHz PCS, 2.1 GHz UMTS and 2.4 GHz Wireless LAN • Long-Range Bluetooth applications requiring improved system sensitivity via use of an external LNA Introduction The BGA622 is an easy-to-use, versatile and flexible low-cost Low Noise Amplifier (LNA) MMIC designed for the high linearity and sensitivity requirements of existing and next - generation wireless applications including GSM, 900 MHz ISM, GPS, UMTS and Wireless LANs. Based on Infineon’s cost-effective 70 GHz fT Silicon-Germanium (SiGe) B7HF bipolar process technology, the BGA622 offers a 1.1 dB noise figure and 15 dB of gain at 2.1 GHz for high performance, cost-effective mobile communications applications. BGA622 offers impressive noise figure performance, particularly for a lowcost, integrated MMIC. In the past, in-circuit noise figures approaching 1.0 dB at 2 GHz were possible only for more expensive GaAs-based, fully discrete solutions utilizing narrowband impedance matching and higher external parts count. The BGA622 combines the excellent noise figure advantages of a high-performance discrete solution with the ease-of-use, low parts count, and diminished risk and reduced system development time made possible by a MMIC approach. Application Note 1 V3.0, 2001-10 The BGA622 Silicon-Germanium Universal Low Noise Amplifier MMIC in 1800 - 2500 MHz Receiver Applications Introduction The new LNA incorporates a 50 Ω matched output with an integrated output DC blocking capacitor. The broadband output match simplifies integration issues with external imagestripping filters. The input is pre-matched, requiring an external DC blocking capacitor. An integrated, on-chip inductor eliminates the need for an external RF choke on the voltage supply pin. The noise figure of BGA622 is relatively insensitive to the input impedance matching approach taken by the end user, reducing development time and risk. A low supply current of 6 mA at 2.75 V and an integrated on/off feature provides for low power consumption and increased stand by time for 3G cellular handsets or other portable, battery-operated wireless applications. Vcc,4 In,1 Out,3 On/Off 10kΩ GND,2 Figure 1 BGA622’s Equivalent Circuit In, 1 4, Vcc GND, 2 3, Out Top View Figure 2 Pin Connections Application Note 2 V3.0, 2001-10 The BGA622 Silicon-Germanium Universal Low Noise Amplifier MMIC in 1800 - 2500 MHz Receiver Applications Overview Overview The BGA622 is shown in three different configurations for the frequency band between 1700 MHz and 2500 MHz which covers the PCN/PCS, UMTS and BlueTooth frequencies at 1800 / 1900 MHz, 2.14 GHz and 2.4 GHz: • Configuration A: minimum parts count, power down option is not used • Configuration B: BGA622 with power down option • Configuration C: BGA622 with power down option and increased IIP3 The following table shows the measured performance of these three circuits. All measurement values presented in this application note include losses of both PCB and connectors - in other words, the reference planes used for measurements are the PCB’s RF SMA connectors. Noise figure and gain results shown do not have any PCB loss extracted from them. Performance Overview Parameter Configuration A Configuration B Configuration C Supply voltage 2.75 V 2.75 V 2.75 V Supply current 5.5 mA 5.4 mA 5.4 mA Gain 14.8 dB @ 1.85 GHz 14.5 dB @ 1.85 GHz 14.6 dB @ 1.85 GHz 13.8 dB @ 2.14 GHz 13.5 dB @ 2.14 GHz 13.5 dB @ 2.14 GHz 12.6 dB @ 2.4 GHz 12.5 dB @ 2.4 GHz 12.5 dB @ 2.4 GHz Noise Figure 1.2 dB @ 1.85 GHz 1.2 dB @ 1.85 GHz 1.2 dB @ 1.85 GHz 1.25 dB @ 2.14 GHz 1.2 dB @ 2.14 GHz 1.25 dB @ 2.14 GHz 1.3 dB @ 2.4 GHz 1.35 dB @ 2.4 GHz 1.3 dB @ 2.4 GHz Input return loss 11.1 dB @ 1.85 GHz 11.9 dB @ 1.85 GHz 14.1 dB @ 1.85 GHz 12.5 dB @ 2.14 GHz 12.3 dB @ 2.14 GHz 13.1 dB @ 2.14 GHz 11.6 dB @ 2.4 GHz 11.2 dB @ 2.4 GHz 11.1 dB @ 2.4 GHz Output return loss 12.4 dB @ 1.85 GHz 12.2 dB @ 1.85 GHz 11.7 dB @ 1.85 GHz 12.5 dB @ 2.14 GHz 11.4 dB @ 2.14 GHz 11.3 dB @ 2.14 GHz 12.8 dB @ 2.4 GHz 11.0 dB @ 2.4 GHz 11.0 dB @ 2.4 GHz Reverse Isolation 26.1 dB @ 1.85 GHz 26.3 dB @ 1.85 GHz 26.2 dB @ 1.85 GHz 24.8 dB @ 2.14 GHz 25.0 dB @ 2.14 GHz 25.0 dB @ 2.14 GHz 23.8 dB @ 2.4 GHz 24.0 dB @ 2.4 GHz 24.1 dB @ 2.4 GHz Input compression -15 dBm point1) Input 3rd order intercept point2) 1) 2) -16 dBm -15 dBm -7.1 dBm @ 1.8 GHz -6.6 dBm @ 1.8 GHz 4.7 dBm @ 1.8 GHz -5.5 dBm @ 2.14 GHz -4.0 dBm @ 2.14 GHz 4.4 dBm @ 2.14 GHz -3.9 dBm @ 2.4 GHz -3.9 dBm @ 2.4 GHz 4.3 dBm @ 2.4 GHz Measured at 2.14 GHz -30 dBm per tone, ∆f = 1 MHz Application Note 3 V3.0, 2001-10 The BGA622 Silicon-Germanium Universal Low Noise Amplifier MMIC in 1800 - 2500 MHz Receiver Applications Configuration A Configuration A The circuit in Figure 3 shows the minimum parts count version of a BGA622 LNA. There are only three external elements necessary. A DC blocking capacitor at the output and a coil at the power supply are already integrated on chip Vcc C3 47pF In L1 2.2nH 4 1 Q1 BGA622 C1 47pF 2 Figure 3 Out 3 Circuit Diagram of Configuration A Bill of Materials of Configuration A Name Value Package Manufacturer Function C1 C3 L1 47 pF 0402 various DC block 47 pF 0402 various RF bypass 2.2 nH 0402 Toko LL1005-FH Input matching Q1 BGA622 SOT-343 Infineon Technologies SiGe MMIC For measurement graphs of configuration A please refer to the next pages. Application Note 4 V3.0, 2001-10 The BGA622 Silicon-Germanium Universal Low Noise Amplifier MMIC in 1800 - 2500 MHz Receiver Applications Configuration A 2 Noise Figure [dB] 1,8 1,6 1,4 1,2 1 0,8 0,6 1,7 1,9 2,1 2,3 2,5 Frequency [GHz] Figure 4 Noise Figure Configuration A 16 Gain [dB] 15 14 13 12 11 10 1,7 1,9 2,1 2,3 2,5 Frequency [GHz] Figure 5 Gain Configuration A Application Note 5 V3.0, 2001-10 The BGA622 Silicon-Germanium Universal Low Noise Amplifier MMIC in 1800 - 2500 MHz Receiver Applications Configuration A Return Loss [dB] 6 8 10 s11 12 s22 14 16 1,7 1,9 2,1 2,3 2,5 2,3 2,5 Frequency [GHz] Figure 6 Return Loss Configuration A Reverse Isolation [dB] 20 22 24 26 28 1,7 1,9 2,1 Frequeny [GHz] Figure 7 Reverse Isolation Configuration A Application Note 6 V3.0, 2001-10 The BGA622 Silicon-Germanium Universal Low Noise Amplifier MMIC in 1800 - 2500 MHz Receiver Applications Configuration A 5 K, B1 4 3 K 2 B1 1 0 0 1 2 3 4 5 6 Frequency [GHz] Stability Factor K and Stability Measure B1 of Configuration A Gain [dB] Figure 8 20 18 16 14 12 10 8 6 4 2 0 0 1 2 3 4 5 6 Frequency [GHz] Figure 9 Wide Span Gain Configuration A Application Note 7 V3.0, 2001-10 The BGA622 Silicon-Germanium Universal Low Noise Amplifier MMIC in 1800 - 2500 MHz Receiver Applications Configuration A Return Loss [dB] 0 2 4 6 8 10 12 14 16 18 20 s11 s22 0 1 2 3 4 5 6 Frequency [GHz] Wide Span Return Loss Configuration A 0 15 Pout [dBm] -5 14 Gain -10 13 -15 12 -20 Gain [dB] Figure 10 11 Pout -25 10 -35 -30 -25 -20 -15 -10 Pin [dBm] Figure 11 Gain Compression @ 2.14 GHz Configuration A Application Note 8 V3.0, 2001-10 The BGA622 Silicon-Germanium Universal Low Noise Amplifier MMIC in 1800 - 2500 MHz Receiver Applications Configuration B Configuration B Figure 12 shows a BGA622 LNA with available power down mode. In the BGA622, an internal high-impedance path exists around the device’s internal output DC blocking capacitor, between the output pin and the device’s internal shutdown circuitry. Applying Vcc at the Output pin (pin 3) will switch off the BGA622 and only a small supply current of about 0.26 mA flows into the device in shutdown mode. The schematic shows the “PD” (Power Down) connection where the shutdown signal may be applied. Ground or an open circuit at the PD pin will turn on the device. Note that if the Power Down feature is employed, the internal DC blocking capacitor of the BGA622 is bypassed by external circuitry, and therefore some sort of external DC blocking at the output must be employed. This can be either an external output DC blocking capacitor, or the usual image-stripping filter, provided the input of the filter presents a DC open circuit. Vcc C3 47pF In L1 2.2nH 1 4 Q1 BGA622 C1 47pF 2 C4 47pF Out 3 L3 47nH PD C5 47pF Figure 12 Circuit Diagram Configuration B Bill of Materials of Configuration B Name Value Package Manufacturer Function C1 C3 C4 C5 L1 L3 47 pF 0402 various DC block 47 pF 0402 various RF bypass 47 pF 0402 various DC block 47 pF 0402 various RF bypass 2.2 nH 0402 Toko LL 1005-FH Input matching 47 nH 0402 Toko LL 1005-FH RF block Q1 BGA622 SOT-343 Infineon Technologies SiGe MMIC Application Note 9 V3.0, 2001-10 The BGA622 Silicon-Germanium Universal Low Noise Amplifier MMIC in 1800 - 2500 MHz Receiver Applications Configuration B 2 Noise Figure [dB] 1,8 1,6 1,4 1,2 1 0,8 0,6 1,7 1,9 2,1 2,3 2,5 Frequency [GHz] Figure 13 Noise Figure Configuration B 16 Gain [dB] 15 14 13 12 11 10 1,7 1,9 2,1 2,3 2,5 Frequency [GHz] Figure 14 Gain Configuration B Application Note 10 V3.0, 2001-10 The BGA622 Silicon-Germanium Universal Low Noise Amplifier MMIC in 1800 - 2500 MHz Receiver Applications Configuration B Return Loss [dB] 6 8 10 s11 12 s22 14 16 1,7 1,9 2,1 2,3 2,5 2,3 2,5 Frequency [GHz] Figure 15 Return Loss Configuration B Reverse Isolation [dB] 20 22 24 26 28 1,7 1,9 2,1 Frequeny [GHz] Figure 16 Reverse Isolation Configuration B Application Note 11 V3.0, 2001-10 The BGA622 Silicon-Germanium Universal Low Noise Amplifier MMIC in 1800 - 2500 MHz Receiver Applications Configuration B 5 K, B1 4 3 K 2 B1 1 0 0 1 2 3 4 5 6 Frequency [GHz] Stability Factor K and Stability Measure B1 of Configuration B Gain [dB] Figure 17 20 18 16 14 12 10 8 6 4 2 0 0 1 2 3 4 5 6 Frequency [GHz] Figure 18 Wide Span Gain Configuration B Application Note 12 V3.0, 2001-10 The BGA622 Silicon-Germanium Universal Low Noise Amplifier MMIC in 1800 - 2500 MHz Receiver Applications Configuration B Return Loss [dB] 0 2 4 6 8 10 12 14 16 18 20 s11 s22 0 1 2 3 4 5 6 Frequency [GHz] Wide Span Return Loss Configuration B 0 15 Pout [dBm] -5 14 Gain -10 13 -15 12 -20 Gain [dB] Figure 19 11 Pout -25 10 -35 -30 -25 -20 -15 -10 Pin [dBm] Figure 20 Gain Compression @ 2.14 GHz Configuration B Application Note 13 V3.0, 2001-10 The BGA622 Silicon-Germanium Universal Low Noise Amplifier MMIC in 1800 - 2500 MHz Receiver Applications Configuration B Forward Transmission [dB] 0 -10 -20 -30 -40 -50 -60 0 1 2 3 4 5 6 5 6 Frequency [GHz] Figure 21 Forward Transmission in Power Down Mode 0 s11 2,5 Return Loss [dB] 5 s22 7,5 10 12,5 15 17,5 20 0 1 2 3 4 Frequency [GHz] Figure 22 Input and Output Return Loss in Power Down Mode Application Note 14 V3.0, 2001-10 The BGA622 Silicon-Germanium Universal Low Noise Amplifier MMIC in 1800 - 2500 MHz Receiver Applications Configuration C Configuration C The circuit in Figure 23 shows a way to increase the input 3rd order intercept point of BGA622. L2 and C2 offer low-frequency intermodulation products a low impedance path to ground. This prevents them from modulating the base voltage of the BGA622’s internal RF transistor and thus linearity is improved. Typically the input 3rd-order intercept point of BGA622 can be improved by 6 to 10 dB in this manner. Vcc C2 100nF L2 22nH C3 47pF In L1 2.2nH 1 4 Q1 BGA622 C1 47pF 2 C4 47pF Out 3 PD L3 47nH C5 47pF Figure 23 Circuit Diagram Configuration C Bill of Materials of Configuration C Name Value Package Manufacturer Function C1 C2 C3 C4 C5 L1 L2 L3 47 pF 0402 various DC block 100 nF 0603 various IIP3 improvement 47 pF 0402 various RF bypass 47 pF 0402 various DC block 47 pF 0402 various RF bypass 2.2 nH 0402 Toko LL 1005-FH Input matching 22 nH 0402 Toko LL 1005-FH RF block 47 nH 0402 Toko LL 1005-FH RF block Q1 BGA622 SOT-343 Infineon Technologies SiGe MMIC Application Note 15 V3.0, 2001-10 The BGA622 Silicon-Germanium Universal Low Noise Amplifier MMIC in 1800 - 2500 MHz Receiver Applications Configuration C 2 Noise Figure [dB] 1,8 1,6 1,4 1,2 1 0,8 0,6 1,7 1,9 2,1 2,3 2,5 Frequency [GHz] Figure 24 Noise Figure Configuration C 16 Gain [dB] 15 14 13 12 11 10 1,7 1,9 2,1 2,3 2,5 Frequency [GHz] Figure 25 Gain Configuration C Application Note 16 V3.0, 2001-10 The BGA622 Silicon-Germanium Universal Low Noise Amplifier MMIC in 1800 - 2500 MHz Receiver Applications Configuration C Return Loss [dB] 6 8 10 s22 12 14 s11 16 1,7 1,9 2,1 2,3 2,5 2,3 2,5 Frequency [GHz] Figure 26 Return Loss Configuration C Reverse Isolation [dB] 20 22 24 26 28 1,7 1,9 2,1 Frequeny [GHz] Figure 27 Reverse Isolation Configuration C Application Note 17 V3.0, 2001-10 The BGA622 Silicon-Germanium Universal Low Noise Amplifier MMIC in 1800 - 2500 MHz Receiver Applications Configuration C 5 K, B1 4 3 K 2 B1 1 0 0 1 2 3 4 5 6 Frequency [GHz] Figure 28 Stability Factor K and Stability Measure B1 of Configuration C 20 17,5 Gain [dB] 15 12,5 10 7,5 5 2,5 0 0 1 2 3 4 5 6 Frequency [GHz] Figure 29 Wide Span Gain Configuration C Application Note 18 V3.0, 2001-10 The BGA622 Silicon-Germanium Universal Low Noise Amplifier MMIC in 1800 - 2500 MHz Receiver Applications Configuration C 0 2 s11 Return Loss [dB] 4 6 8 10 12 14 s22 16 18 0 1 2 3 4 5 6 Frequency [GHz] Wide Span Return Loss Configuration C 0 15 Pout [dBm] -5 14 Gain -10 13 -15 12 -20 Gain [dB] Figure 30 11 Pout -25 10 -35 -30 -25 -20 -15 -10 Pin [dBm] Figure 31 Gain Compression @ 2.14 GHz Configuration C Application Note 19 V3.0, 2001-10 The BGA622 Silicon-Germanium Universal Low Noise Amplifier MMIC in 1800 - 2500 MHz Receiver Applications Application PCB Application PCB Figure 32 shows the placement of the specific components on the PCB. To place L1 on the board the input 50 Ω transmission line has to have a gap cut in it to allow for the insertion of L1. For this purpose a relief is provided in the solder mask to ease the soldering of the component. Vcc NA NA L2 C2 L1 C1 1 4 Q1 2 3 C4 9.5 mm C3 In Out L3 C5 NA 8 mm PD Figure 32 Component Placement on Application PCB 35 µm Cu 0.2 mm FR4 35 µm Cu for mechanical rigidity of PCB 0.8 mm FR4 35 µm Cu Figure 33 PCB Cross Section Evaluation boards for the LNA applications described in this application note are available from Infineon Technologies. Application Note 20 V3.0, 2001-10 The BGA622 Silicon-Germanium Universal Low Noise Amplifier MMIC in 1800 - 2500 MHz Receiver Applications Revision History: 2001-10 V3.0 Previous Version: Page Subjects (major changes since last revision) Document’s layout has been changed: 2002-Sep. For questions on technology, delivery and prices please contact the Infineon Technologies Offices in Germany or the Infineon Technologies Companies and Representatives worldwide: see our webpage at http://www.infineon.com. Edition 2001-10 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 München, Germany © Infineon Technologies AG 2002. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. 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