SHINDENGEN S30SC4M

SHINDENGEN
Schottky Rectifiers (SBD)
S30SC4M
Dual
OUTLINE DIMENSIONS
Case : MTO-3P
Unit : mm
40V 30A
FEATURES
● Tj150℃
● PRRSM avalanche guaranteed
● Small θ jc
● High current capacity
APPLICATION
● Switching power supply
● DC/DC converter
● Home Appliances, Office Equipment
● Telecommunication
RATINGS
●Absolute Maximum Ratings (If not specified Tc=25℃)
Item
Symbol
Conditions
Storage Temperature
Tstg
Operating Junction Temperature
Tj
Maximum Reverse Voltage
VRM
Repetitive Peak Surge Reverse Voltage
VRRSM Pulse width 0.5ms, duty 1/40
IO
Average Rectified Forward Current
50Hz sine wave, R-load, Rating for each diode Io/2, Tc=126℃
Peak Surge Forward Current
IFSM 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=125℃
Repetitive Peak Surge Reverse Power
PRRSM Pulse width 10μs, Rating of per diode, Tj=25℃
Mounting Torque
TOR (Recommended torque:0.5N・m)
Ratings
-40∼150
150
40
45
30
300
1000
0.8
Unit
℃
℃
V
V
A
A
W
N・m
●Electrical Characteristics (If not specified Tc=25℃)
Item
Symbol
Conditions
IF =15A, Pulse measurement, Rating of per diode
Forward Voltage
VF
Reverse Current
IR
VR=V RM, Pulse measurement, Rating of per diode
Junction Capacitance
Cj
f=1MHz, V R=10V, Rating of per diode
Thermal Resistance
θjc junction to case
Ratings
Max.0.55
Max.10
Typ.590
Max.1.0
Unit
V
mA
pF
℃/W
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
Forward Current IF [A]
S30SC4M
Forward Voltage
10
Tc=150°C [MAX]
Tc=150°C [TYP]
Tc=25°C [MAX]
Tc=25°C [TYP]
1
Pulse measurement per diode
0
0.2
0.4
0.6
Forward Voltage VF [V]
0.8
1
Junction Capacitance Cj [pF]
0.1
100
1000
10
Junction Capacitance
Reverse Voltage VR [V]
1
S30SC4M
f=1MHz
Tc=25°C
TYP
per diode
S30SC4M
Reverse Current
10000
1000
Reverse Current IR [mA]
Tc=150°C [MAX]
Tc=150°C [TYP]
100
Tc=125°C [TYP]
Tc=100°C [TYP]
10
Tc=75°C [TYP]
1
Pulse measurement per diode
0.1
0
5
10
15
20
25
Reverse Voltage VR [V]
30
35
40
S30SC4M
Reverse Power Dissipation
Reverse Power Dissipation PR [W]
50
DC
D=0.05
40
0.1
0.2
0.3
30
0.5
20
SIN
10
0
0.8
0
10
20
30
40
50
Reverse Voltage VR [V]
Tj = 150°C
0
VR
tp
D=tp /T
T
S30SC4M
Forward Power Dissipation
30
Forward Power Dissipation PF [W]
DC
D=0.8
25
0.3
20
SIN
0.5
0.2
0.1
0.05
15
10
5
0
0
10
20
30
40
50
Average Rectified Forward Current IO [A]
Tj = 150°C
IO
0
tp
D=tp /T
T
S30SC4M
Derating Curve
Average Rectified Forward Current IO [A]
60
50 DC
D=0.8
40
0.5
SIN
30
0.3
0.2
20
0.1
0.05
10
0
0
20
40
60
80
100
120
140
160
Case Temperature Tc [°C]
VR = 20V
IO
0
0
VR
tp
D=tp /T
T
S30SC4M
Peak Surge Forward Capability
IFSM
500
10ms 10ms
1 cycle
non-repetitive,
sine wave,
Tj=125°C before
surge current is applied
Peak Surge Forward Current IFSM [A]
400
300
200
100
0
1
2
5
10
20
Number of Cycles [cycles]
50
100
SBD
Repetitive Surge Reverse Power Derating Curve
120
PRRSM Derating [%]
100
80
60
40
20
0
0
50
100
150
Junction Temperature Tj [°C]
IRP
IR
VR
VRP
0.5IRP
0
tp
PRRSM = IRP × VRP
SBD
Repetitive Surge Reverse Power Capability
PRRSM(t p) / PRRSM(t p=10µs) Ratio
10
1
0.1
1
10
100
Pulse Width t p [µs]
IRP
IR
VR
VRP
0.5IRP
0
tp
PRRSM = IRP × VRP