SHINDENGEN S40HC1R5

SHINDENGEN
Schottky Rectifiers (SBD)
S40HC1R5
Dual
OUTLINE DIMENSIONS
Case : MTO - 3P
Unit : mm
15V 40A
RATINGS
œAbsolute Maximum Ratings i Tc=25Ž, unless otherwise specified j
Symbol
Conditions
Item
Tstg
Storage Temperature
Tj
Operating Junction Temperature
VRM
Maximum Reverse Voltage
IO
Average Rectified Forward Current
50Hz sine wave, R-load, Rating for each diode Io/2, Tc=103Ž
IFSM 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=25Ž
Peak Surge Forward Current
TOR (Recommended torqueF 0.5N¥m)
Mounting Torque
Ratings
-55`125
125
15
40
350
0.8(0.5)
Unit
Ž
Ž
V
A
A
N¥m
œElectrical Characteristics i Tc=25Ž, unless otherwise specified j
Item
Symbol
Conditions
VF
Forward Voltage
IF=20A, Pulse measurement, Rating of per diode
IR
Reverse Current
VR=15V, Pulse measurement, Rating of per diode
Cj
Junction Capacitance
f=1MHz, VR=10V, Rating of per diode
Thermal Resistance
junction to case
Æjc
Ratings
Max 0.41
Max 10
Typ 960
Max 1.0
Unit
V
mA
pF
Ž/W
Copyright & Copy;2001 Shindengen Electric Mfg.Co.Ltd
S40HC1R5
Forward Voltage
Pulse measurement per diode
500
200
Forward Current
IF [A]
100
50
Tc=125°C [MAX]
Tc=125°C [TYP]
Tc= 25°C [MAX]
Tc= 25°C [TYP]
20
10
5
2
1
0
0.2
0.4
0.6
0.8
1
1.2
Forward Voltage VF [V]
1.4
1.6
S40HC1R5
Reverse Current
Pulse measurement per diode
10000
Tc=125°C [TYP]
IR [mA]
1000
Tc=100°C [TYP]
Reverse Current
100
Tc=75°C [TYP]
Tc=50°C [TYP]
10
Tc=25°C [TYP]
1
0.1
0
5
Reverse Voltage
10
VR [V]
15
Forward Power Dissipation
S40HC1R5
25
DC
PF [W]
D=0.8
0.5
20
0.3
SIN
0.2
Forward Power Dissipation
0.1
0.05
15
10
5
0
0
10
20
30
40
50
60
70
Average Rectified Forward Current Io [A]
Tj =125°C
IO
0
tp
D=tp/T
T
S40HC1R5
Reverse Power Dissipation
PR [W]
35
Reverse Power Dissipation
40
25
DC
D=0.05
0.1
30
0.2
0.3
20
0.5
15
10
SIN
0.8
5
0
0
5
10
Reverse Voltage
Tj = 125°C
15
20
VR [V]
0
VR
tp
D=tp/T
T
Derating Curve
S40HC1R5
Average Rectified Forward Current
Io [A]
80
70
DC
60
D=0.8
50
0.5
40 SIN
0.3
30 0.2
20 0.1
0.05
10
0
0
20
40
60
80
100
120
140
Case Temperature Tc [°C]
IO
VR = 7.5V
0
0
VR
tp
D=tp/T
T
S40HC1R5
Peak Surge Forward Capability
IFSM
500
10ms
10ms
Peak Surge Forward Current
IFSM [A]
1 cycle
non-repetitive,
sine wave,
Tj=25°C before
surge current is applied
400
300
200
100
0
1
2
5
10
20
Number of Cycles [cycle]
50
100
S40HC1R5
Junction Capacitance
10000
Junction Capacitance
Cj [pF]
f=1MHz
Tc=25°C
per diode
TYP
1000
100
0.1
0.2
0.5
1
Reverse Voltage
2
VR [V]
5
10
15