PHILIPS BC846A

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
BC846; BC847
NPN general purpose transistors
Product specification
Supersedes data of 1997 Mar 12
1999 Apr 23
Philips Semiconductors
Product specification
NPN general purpose transistors
BC846; BC847
FEATURES
PINNING
• Low current (max. 100 mA)
PIN
• Low voltage (max. 65 V).
APPLICATIONS
DESCRIPTION
1
base
2
emitter
3
collector
• General purpose switching and amplification.
DESCRIPTION
NPN transistor in a SOT23 plastic package.
PNP complements: BC856 and BC857.
handbook, halfpage
3
3
MARKING
TYPE
NUMBER
1
MARKING
CODE
TYPE
NUMBER
MARKING
CODE(1)
BC846
1D∗
BC847A
1E∗
BC846A
1A∗
BC847B
1F∗
BC846B
1B∗
BC847C
1G∗
BC847
1H*
1
2
2
Top view
MAM255
Note
1. ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO
VCEO
PARAMETER
collector-base voltage
CONDITIONS
MIN.
MAX.
UNIT
open emitter
BC846
−
80
V
BC847
−
50
V
BC846
−
65
V
BC847
−
45
V
−
6
V
collector-emitter voltage
open base
VEBO
emitter-base voltage
IC
collector current (DC)
−
100
mA
ICM
peak collector current
−
200
mA
IBM
peak base current
−
200
mA
open collector
Ptot
total power dissipation
−
250
mW
Tstg
storage temperature
Tamb ≤ 25 °C; note 1
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 23
2
Philips Semiconductors
Product specification
NPN general purpose transistors
BC846; BC847
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
CONDITIONS
thermal resistance from junction to ambient
VALUE
UNIT
500
K/W
note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
IEBO
emitter cut-off current
hFE
DC current gain
CONDITIONS
MIN.
TYP.
MAX.
UNIT
IE = 0; VCB = 30 V
−
−
15
nA
IE = 0; VCB = 30 V; Tj = 150 °C
−
−
5
µA
IC = 0; VEB = 5 V
−
−
100
nA
IC = 10 µA; VCE = 5 V;
see Figs 2, 3 and 4
−
90
−
BC846B; BC847B
−
150
−
BC847C
−
270
−
BC846A; BC847A
DC current gain
IC = 2 mA; VCE = 5 V;
see Figs 2, 3 and 4
110
−
450
BC847
110
−
800
BC846A;BC847A
110
180
220
BC846
BC846B; BC847B
200
290
450
BC847C
420
520
800
VCEsat
collector-emitter saturation
voltage
IC = 10 mA; IB = 0.5 mA
−
90
250
mV
IC = 100 mA; IB = 5 mA
−
200
600
mV
VBEsat
base-emitter saturation voltage
IC = 10 mA; IB = 0.5 mA; note 1
−
700
−
mV
IC = 100 mA; IB = 5 mA; note 1
−
900
−
mV
VBE
base-emitter voltage
IC = 2 mA; VCE = 5 V; note 2
580
660
700
mV
IC = 10 mA; VCE = 5 V; note 2
−
−
770
mV
IE = ie = 0; VCB = 10 V; f = 1 MHz;
−
2.5
−
pF
Cc
collector capacitance
fT
transition frequency
IC = 10 mA; VCE = 5 V; f = 100 MHz; 100
−
−
MHz
F
noise figure
IC = 200 µA; VCE = 5 V; RS = 2 kΩ;
f = 1 kHz; B = 200 Hz
2
10
dB
Notes
1. VBEsat decreases by about 1.7 mV/K with increasing temperature.
2. VBE decreases by about 2 mV/K with increasing temperature.
1999 Apr 23
3
−
Philips Semiconductors
Product specification
NPN general purpose transistors
BC846; BC847
MBH723
250
handbook, full pagewidth
hFE
200
VCE = 5 V
150
100
50
0
10−2
10−1
1
102
10
IC (mA)
103
BC846A; BC847A.
Fig.2 DC current gain; typical values.
MBH724
300
handbook, full pagewidth
VCE = 5 V
hFE
200
100
0
10−2
10−1
1
10
BC846B; BC847B.
Fig.3 DC current gain; typical values.
1999 Apr 23
4
102
IC (mA)
103
Philips Semiconductors
Product specification
NPN general purpose transistors
BC846; BC847
MBH725
600
handbook, full pagewidth
VCE = 5 V
hFE
400
200
0
10−2
10−1
1
10
BC847C.
Fig.4 DC current gain; typical values.
1999 Apr 23
5
102
IC (mA)
103
Philips Semiconductors
Product specification
NPN general purpose transistors
BC846; BC847
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
E
B
A
X
HE
v M A
3
Q
A
A1
1
2
e1
bp
c
w M B
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
1.9
0.95
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
97-02-28
SOT23
1999 Apr 23
EUROPEAN
PROJECTION
6
Philips Semiconductors
Product specification
NPN general purpose transistors
BC846; BC847
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Apr 23
7
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© Philips Electronics N.V. 1999
SCA63
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Printed in The Netherlands
115002/00/03/pp8
Date of release: 1999 Apr 23
Document order number:
9397 750 05808