LT5519 - 0.7GHz to 1.4GHz High Linearity Upconverting Mixer

LT5519
0.7GHz to 1.4GHz
High Linearity
Upconverting Mixer
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FEATURES
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DESCRIPTIO
Wide RF Frequency Range: 0.7GHz to 1.4GHz
17.1dBm Typical Input IP3 at 1GHz
On-Chip RF Output Transformer
On-Chip 50Ω Matched LO and RF Ports
Single-Ended LO and RF Operation
Integrated LO Buffer: –5dBm Drive Level
Low LO to RF Leakage: – 44dBm Typical
Noise Figure: 13.6dB
Wide IF Frequency Range: 1MHz to 400MHz
Enable Function with Low Off-State Leakage Current
Single 5V Supply
Small 16-Lead QFN Plastic Package
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APPLICATIO S
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Wireless Infrastructure
Cable Downlink Infrastructure
Point-to-Point and Point-to-Multipoint Data
Communications
High Linearity Frequency Conversion
The LT®5519 mixer is designed to meet the high linearity
requirements of wireless and cable infrastructure transmission systems. A high speed, internally 50Ω matched,
LO amplifier drives a double-balanced mixer core, allowing the use of a low power, single-ended LO source. An RF
output transformer is integrated, thus eliminating the
need for external matching components at the RF output,
while reducing system cost, component count, board area
and system-level variations. The IF port can be easily
matched to a broad range of frequencies for use in many
different applications.
The LT5519 mixer delivers +17.1dBm typical input 3rd
order intercept point at 1GHz with IF input signal levels of
–10dBm. The input 1dB compression point is typically
+5.5dBm. The IC requires only a single 5V supply.
, LTC and LT are registered trademarks of Linear Technology Corporation.
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TYPICAL APPLICATIO
5VDC
1µF
RF Output Power, IM3 and IM2
vs IF Input Power (Two Input Tones)
1000pF
39nH
10
BPF
220pF
VCC1
VCC2
VCC3
BIAS
100Ω
0
10pF
LT5519
4:1
IF
+
RF +
33pF
IF –
220pF
RF –
100Ω
GND
5pF
(OPTIONAL)
LO INPUT
–5dBm
LO+
85Ω
5pF
BPF
PA
POUT, IM3, IM2 (dBm/TONE)
EN
POUT
–10
–20
–30
–40
–50
–60
fRF = 1000MHz
PLO = –5dBm
fLO = 1140MHz
fIF1 = 140MHz
fIF2 = 141MHz
TA = 25°C
–70
IM2
–80
–90
–16
LO –
IM3
5519 F01a
–12
–4
0
–8
IF INPUT POWER (dBm/TONE)
4
5519 F01b
Figure 1. Frequency Conversion in Wireless Infrastructure Transmitter
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LT5519
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PACKAGE/ORDER I FOR ATIO
(Note 1)
ORDER PART
NUMBER
GND
GND
TOP VIEW
16 15 14 13
12 GND
GND 1
IF + 2
IF – 3
LT5519EUF
11 RF +
17
10 RF –
9 GND
5
6
7
8
EN
VCC2
VCC3
GND 4
VCC1
Supply Voltage ....................................................... 5.5V
Enable Voltage ............................. –0.3V to (VCC + 0.3V)
LO Input Power (Differential) ............................ +10dBm
LO+ to LO– Differential DC Voltage .......................... ±1V
LO+ and LO– DC Common Mode Voltage ...... –1V to VCC
IF Input Power (Differential) ............................. +10dBm
IF+ and IF – DC Currents ........................................ 25mA
RF+ to RF – Differential DC Voltage ...................... ±0.13V
RF+ and RF – DC Common Mode Voltage ...... –1V to VCC
Operating Temperature Range .................–40°C to 85°C
Storage Temperature Range ................. – 65°C to 125°C
Junction Temperature (TJ).................................... 125°C
LO+
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AXI U RATI GS
LO–
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ABSOLUTE
UF PART
MARKING
UF PACKAGE
16-LEAD (4mm × 4mm) PLASTIC QFN
TJMAX = 125°C, θJA = 37°C/W
EXPOSED PAD (PIN 17) IS GND
MUST BE SOLDERED TO PCB
5519
Consult LTC Marketing for parts specified with wider operating temperature ranges.
ELECTRICAL CHARACTERISTICS
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
IF Input Frequency Range
1 to 400
MHz
LO Input Frequency Range
300 to 1800
MHz
RF Output Frequency Range
700 to 1400
MHz
1GHz Application: VCC = 5VDC, EN = High, TA = 25°C, IF input = 140MHz at –10dBm, LO input = 1.14GHz at –5dBm, RF output measured
at 1GHz, unless otherwise noted. (Test circuit shown in Figure 2) (Notes 2, 3)
PARAMETER
CONDITIONS
IF Input Return Loss
ZO = 50Ω, with External Matching
20
dB
LO Input Return Loss
ZO = 50Ω
17
dB
RF Output Return Loss
ZO = 50Ω
LO Input Power
MIN
TYP
20
–10 to 0
Conversion Gain
MAX
UNITS
dB
dBm
–0.6
dB
17.1
dBm
48
dBm
LO to RF Leakage
–44
dBm
LO to IF Leakage
–40
dBm
Input 1dB Compression
5.5
dBm
Input 3rd Order Intercept
–10dBm/Tone, ∆f = 1MHz
Input 2nd Order Intercept
–10dBm, Single Tone
IF Common Mode Voltage
Internally Biased
1.77
VDC
Noise Figure
Single-Side Band
13.6
dB
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LT5519
DC ELECTRICAL CHARACTERISTICS
(Test Circuit Shown in Figure 2) VCC = 5VDC, EN = High, TA = 25°C, unless otherwise noted. (Note 3)
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
Enable (EN) Low = OFF, High = ON
Turn-On Time (Note 4)
2
µs
Turn-Off Time (Note 4)
6
µs
Input Current
VENABLE = 5VDC
1
Enable = High (ON)
10
3
µA
VDC
Enable = Low (OFF)
0.5
VDC
Power Supply Requirements (VCC)
Supply Voltage
4.5 to 5.25
VDC
Supply Current
VCC = 5VDC
60
70
mA
Shutdown Current
EN = Low
1
100
µA
Note 1: Absolute Maximum Ratings are those values beyond which the life
of a device may be impaired.
Note 2: External components on the final test circuit are optimized for
operation at fRF = 1GHz, fLO = 1.14GHz and fIF = 140MHz.
Note 3: Specifications over the –40°C to 85°C temperature range are
assured by design, characterization and correlation with statistical process
controls.
Note 4: Turn-On and Turn-Off times are based on the rise and fall times of
the RF output envelope from –40dBm to full power with an IF input power
of –10dBm.
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TYPICAL PERFOR A CE CHARACTERISTICS
Shutdown Current
vs Supply Voltage
Supply Current vs Supply Voltage
1.2
66
TA = 85°C
62
1.0
SHUTDOWN CURRENT (µA)
SUPPLY CURRENT (mA)
64
TA = 25°C
60
58
TA = –40°C
56
54
0.8
TA = 85°C
0.6
0.4
TA = –40°C
0.2
52
50
(Test Circuit Shown in Figure 2)
TA = 25°C
0
4
4.25
4.5
5
5.25
4.75
SUPPLY VOLTAGE (V)
5.5
5519 G01
4
4.25
4.5
4.75
5
SUPPLY VOLTAGE (V)
5.25
5.5
5519 G02
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LT5519
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TYPICAL PERFOR A CE CHARACTERISTICS
VCC = 5VDC, EN = High, TA = 25°C, IF input = 140MHz at –10dBm, LO input = 1.14GHz at –5dBm, RF output measured at 1000MHz,
unless otherwise noted. For 2-tone inputs: 2nd IF input = 141MHz at –10dBm. (Test Circuit Shown in Figure 2.)
Conversion Gain and SSB Noise
Figure vs RF Output Frequency
IIP3 and IIP2
vs RF Output Frequency
25
16
HIGH SIDE LO
14
IIP3 (dBm)
8
6
4
2
21
40
19
30
17
LOW SIDE LO
15
LOW SIDE AND HIGH SIDE LO
–6
500
700
1100
1300
900
RF OUTPUT FREQUENCY (MHz)
13
500
1500
0
1500
700
900
1100
1300
RF OUTPUT FREQUENCY (MHz)
20
14
18
NF
IIP3 (dBm)
GAIN (dB)
8
4
GAIN
2
TA = 25°C
TA = –40°C
18
30
IIP3
TA = 25°C
20
16
–12
–6
–4
–8
LO INPUT POWER (dBm)
–2
0
15
–16
–12
–8
–4
0
LO INPUT POWER (dBm)
5519 G06
–60
–16
50
40
18
30
HIGH SIDE LO
17
20
LOW SIDE LO
16
10
IIP2 (dBm)
19
POUT, IM3 (dBm/TONE)
–10
HIGH SIDE LO
0
–8
–4
0
LO INPUT POWER (dBm)
–8
–4
0
LO INPUT POWER (dBm)
POUT
RF Output Power and Output IM2 vs
IF Input Power (Two Input Tones)
–30
0
TA = –40°C
TA = 85°C
–20
TA = 25°C
–10
TA = 25°C
–40
TA = –40°C
–50
TA = 85°C
–60
–70
4
5519 G09
4
5519 G08
IM3
–90
–16
POUT
4
5519 G10
TA = 25°C
–30
–40
–50
TA = –40°C
–60
TA = 25°C
IM2
–80
–12
–4
0
–8
IF INPUT POWER (dBm/TONE)
TA = –40°C
TA = 85°C
–20
–70
–80
–12
–12
TA = –40°C
10
0
IIP2
20
IIP3 (dBm)
0
4
10
60
LOW SIDE LO
TA = 25°C
–50
RF Output Power and Output IM3 vs
IF Input Power (Two Input Tones)
21
15
–16
TA = 85°C
–40
5519 G07
IIP3 and IIP2 vs
LO Input Power
IIP3
–30
10
TA = 85°C
2
TA = 85°C
–4
–16
–20
TA = –40°C
4
–2
–10
40
17
6
0
50
IIP2 (dBm)
10
6
TA = 25°C
TA = 85°C
19
NF (dB)
12
TA = –40°C
0
IIP2
14
8
60
TA = –40°C
20
1500
LO-RF Leakage
vs LO Input Power
21
16
10
700
1100
1300
900
RF OUTPUT FREQUENCY (MHz)
5519 G05
IIP3 and IIP2 vs
LO Input Power
16
TA = 25°C
–60
500
5519 G04
Conversion Gain and SSB Noise
Figure vs LO Input Power
TA = 85°C
–50
10
5519 G03
12
HIGH SIDE LO
–40
LOW SIDE LO
GAIN
–4
20
–30
LO LEAKAGE (dBm)
0
–2
HIGH SIDE LO
IIP3
–20
IIP2
POUT, IM2 (dBm/TONE)
10
50
HIGH SIDE LO
NF
–10
IIP2 (dBm)
GAIN, NF (dB)
23
LOW SIDE LO
12
60
LOW SIDE LO
LO LEAKAGE (dBm)
18
LO-RF Leakage
vs RF Output Frequency
–90
–16
TA = 85°C
–12
–4
0
–8
IF INPUT POWER (dBm/TONE)
4
5519 G11
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LT5519
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TYPICAL PERFOR A CE CHARACTERISTICS
VCC = 5VDC, EN = High, TA = 25°C, IF input = 140MHz at –10dBm, LO input = 1.14GHz at –5dBm, RF output measured at 1000MHz,
unless otherwise noted. For 2-tone inputs: 2nd IF input = 141MHz at –10dBm. (Test Circuit Shown in Figure 2.)
IF, LO and RF Port Return Loss
vs Frequency
Conversion Gain vs IF Input
Power (One Input Tone)
4
Conversion Gain, IIP3 and IIP2
vs Supply Voltage
0
10
–5
8
60
LOW SIDE LO
3
2
HIGH SIDE LO
–1
TA = 85°C
–2
–3
–10
GAIN (dB)
RETURN LOSS (dB)
GAIN (dB)
TA = 25°C
0
–15
IF PORT
–4
6
40
4
30
RF PORT
LOW SIDE LO
0
–25
–5
GAIN
–12
–4
0
–8
IF INPUT POWER (dBm)
–2
–30
4
0
500
1000
1500
FREQUENCY (MHz)
5519 G12
2000
5519 G13
IIP3
HIGH SIDE LO
2
LO PORT
–20
IIP2
4
4.25
20
IIP3, IIP2 (dBm)
1
–6
–16
50
TA = –40°C
10
LOW SIDE AND HIGH SIDE LO
4.5
4.75
5
SUPPLY VOLTAGE (V)
5.25
0
5.5
5519 G14
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PI FU CTIO S
GND (Pins 1, 4, 9, 12, 13, 16): Internal Grounds. These
pins are used to improve isolation and are not intended as
DC or RF grounds for the IC. Connect these pins to low
impedance grounds on the PCB for best performance.
IF+, IF – (Pins 2, 3): Differential IF Signal Inputs. A differential signal must be applied to these pins through DC
blocking capacitors. The pins must be connected to ground
with 100Ω resistors (the grounds must each be capable of
sinking about 18mA). For best LO leakage performance,
these pins should be DC isolated from each other. An
impedance transformation is required to match the IF input to the desired source impedance (typically 50Ω or 75Ω).
EN (Pin 5): Enable Pin. When the applied voltage is greater
than 3V, the IC is enabled. When the applied voltage is less
than 0.5V, the IC is disabled and the DC current drops to
about 1µA.
in Figure␣ 2. The 1000pF capacitor should be located as
close to the pins as possible.
VCC3 (Pin 8): Power Supply Pin for the Internal Mixer.
Typical current consumption is about 36mA. This pin
should be externally connected to VCC through an inductor. A 39nH inductor is shown in Figure 2, though the value
is not critical.
RF –, RF+ (Pins 10, 11): Differential RF Outputs. One pin
may be DC connected to a low impedance ground to realize
a 50Ω single-ended output. No external matching components are required. A DC voltage should not be applied
across these pins, as they are internally connected through
a transformer winding.
VCC1 (Pin 6): Power Supply Pin for the Bias Circuits.
Typical current consumption is about 2mA. This pin
should be externally connected to VCC and have appropriate RF bypass capacitors.
LO+, LO – (Pins 14, 15): Differential Local Oscillator Inputs. The LT5519 works well with a single-ended source
driving the LO+ pin and the LO– pin connected to a low
impedance ground. No external 50Ω matching components are required. An internal resistor is connected
across these pins; therefore, a DC voltage should not be
applied across the inputs.
VCC2 (Pin 7): Power Supply Pin for the LO Buffer Circuits.
Typical current consumption is about 22mA. This pin
should have appropriate RF bypass capacitors as shown
Exposed Pad (Pin 17): DC and RF ground return for the
entire IC. This must be soldered to the printed circuit board
low impedance ground plane.
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LT5519
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BLOCK DIAGRA
EXPOSED
GND
PAD
17
12
RF +
11
RF –
10
GND
9
GND 13
5pF
8 VCC3
HIGH SPEED
LO BUFFER
LO+ 14
10pF
DOUBLEBALANCED
MIXER
85Ω
LO – 15
6 VCC1
5pF
BIAS
GND 16
5 EN
7
1
2
3
4
VCC2
GND
IF +
IF –
GND
5519 BD
TEST CIRCUIT
LOIN
1140MHz
1
IFIN
140MHz
1
R1
C1
T1
2
5
2
C2
3
16
GND
GND
IF +
RF +
ER = 4.4
RF
GND
0.062"
0.018"
DC
GND
11
RFOUT
1000MHz
4
IF –
RF –
GND
EN
GND
5
0.018"
12
LT5519
3
R2
14
13
LO+ GND
GND
C3
4
15
LO –
VCC1
VCC2
6
7
VCC3
10
9
17
8
L1
EN
VCC
5519 F02
C5
C4
REF DES
VALUE
SIZE
PART NUMBER
C1, C2
220pF
0402
AVX 04023C221KAT2A
C3
33pF
0402
AVX 04023A330KAT2A
C4
1000pF
0402
AVX 04023A102KAT2A
C5
1µF
0603
Taiyo Yuden LMK107BJ105MA
L1
R1, R2
T1
39nH
0402
Toko LL1005-FH39NJ
100Ω, 0.1%
0603
IRC PFC-W0603R-03-10R1-B
4:1
SM-22
M/A-COM ETC4-1-2
Figure 2. Test Schematic for the LT5519
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LT5519
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APPLICATIO S I FOR ATIO
The LT5519 consists of a double-balanced mixer, a high
performance LO buffer and bias/enable circuits. The RF
and LO ports may be driven differentially; however, they
are intended to be used in single-ended mode by connecting one input of each pair to ground. The IF input ports
must be DC-isolated from the source and driven differentially. The IF input should be impedance-matched for the
desired input frequency. The LO input has an internal
broadband 50Ω match with return loss better than 10dB
at frequencies up to 1800MHz. The RF output band ranges
from 700MHz to 1400MHz, with an internal RF transformer providing a 50Ω impedance match across the
band. Low side or high side LO injection can be used.
IF Input Port
The IF inputs are connected to the emitters of the doublebalanced mixer transistors, as shown in Figure 3. These
pins are internally biased and an external resistor must be
connected from each IF pin to ground to set the current
through the mixer core. The circuit has been optimized to
work with 100Ω resistors, which will result in approximately 18mA of DC current per side. For best LO leakage
performance, the resistors should be well matched; thus
resistors with 0.1% tolerance are recommended. If LO
leakage is not a concern, then lesser tolerance resistors
can be used. The symmetry of the layout is also important
for achieving optimum LO isolation.
The capacitors shown in Figure 3, C1 and C2, serve two
purposes. They provide DC isolation between the IF+ and
IF – ports, thus preventing DC interactions that could
cause unpredictable variations in LO leakage. They also
100Ω
0.1%
C1
IFIN
50Ω
T1
4:1
LT5519
18mA
2
IF+
C3
VCC
C2
3
100Ω
0.1%
IF –
18mA
5519 F03
Figure 3. IF Input with External Matching
improve the impedance match by canceling excess inductance in the package and transformer. The input capacitor
value required to realize an impedance match at desired
frequency, f, can be estimated as follows:
C1 = C2 =
1
(2πf)2 (LIN + LEXT )
where; f is in units of Hz, LIN and LEXT are in Henry, and C1,
C2 are in Farad. LIN is the differential input inductance of
the LT5519, and is approximately 1.67nH. LEXT represents
the combined inductances of differential external components and transmission lines. For the evaluation board
shown in Figure 10, LEXT = 4.21nH. Thus, for f = 140MHz,
the above formula gives C1 = C2 = 220pF.
Table 1 lists the differential IF input impedance and reflection coefficient for several frequencies. A 4:1 balun can be
used to transform the impedance up to about 50Ω.
Table 1. IF Input Differential Impedance
FREQUENCY
(MHz)
DIFFERENTIAL
INPUT IMPEDANCE
DIFFERENTIAL S11
MAG
ANGLE
10
10.1 + j0.117
0.663
180
44
10.1 + j0.476
0.663
179
70
10.1 + j0.751
0.663
178
140
10.2 + j1.47
0.663
177
170
10.2 + j1.78
0.663
176
240
10.2 + j2.53
0.663
174
360
10.2 + j3.81
0.663
171
500
10.2 + j5.31
0.663
167
LO Input Port
The simplified circuit for the LO buffer input is shown in
Figure 4. The LO buffer amplifier consists of high speed
limiting differential amplifiers, optimized to drive the mixer
quad for high linearity. The LO + and LO – ports can be
driven differentially; however, they are intended to be
driven by a single-ended source. An internal resistor
connected across the LO + and LO – inputs provides a
broadband 50Ω impedance match. Because of the resistive match, a DC voltage at the LO input is not recommended. If the LO signal source output is not AC coupled,
then a DC blocking capacitor should be used at the LO
input.
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LT5519
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APPLICATIO S I FOR ATIO
LOIN
50Ω
LT5519
LO+
14
RF+
LT5519
5pF
11
220Ω
VCC
15
VCC
85Ω
LO –
5pF
220Ω
RF–
10
10pF
8
VCC3
5519 F04
Figure 4. LO Input Circuit
RFOUT
50Ω
5519 F05
Figure 5. RF Output Circuit
Though the LO input is internally matched to 50Ω, there
may be some cases, particularly at higher frequencies or
with different source impedances, where a further optimized match is desired. Table 2 includes the single-ended
input impedance and reflection coefficient vs frequency
for the LO input for use in such cases.
Table 2. Single-Ended LO Input Impedance
RF + and RF – pins are connected together through the
secondary windings of the transformer; thus a DC voltage
should not be applied across these pins.
The impedance data for the RF output, listed in Table 3, can
be used to develop matching networks for different load
impedances.
Table 3. Single-Ended RF Output Impedance
FREQUENCY
(MHz)
INPUT
IMPEDANCE
S11
MAG
ANGLE
200
72.3 – j16.1
0.223
–28.4
400
63.3 – j11.3
0.153
–34.7
600
61.6 – j7.5
0.124
– 29.2
800
61.9 – j6.0
0.119
– 23.6
1000
62.7 – j6.1
0.125
–22.7
1200
63.2 – j7.4
0.134
–25.5
1400
63.3 – j9.5
0.144
–30.8
1600
62.8 – j12.0
0.155
–37.1
1800
61.6 – j14.2
0.163
–43.4
RF Output Port
An internal RF transformer, shown in Figure 5, reduces the
mixer-core impedance to provide an impedance of 50Ω
across the RF + and RF – pins. The LT5519 is designed and
tested with the outputs configured for single-ended operation, as shown in the Figure 5; however, the outputs can be
used differentially as well. A center tap in the transformer
provides the DC connection to the mixer core and the
transformer provides DC isolation at the RF output. The
FREQUENCY
(MHz)
OUTPUT
IMPEDANCE
S11
700
27.6 + j32.0
0.465
103
800
39.7 + j32.1
0.354
88.1
900
50.9 + j23.5
0.227
74.7
1000
53.5 + j10.3
0.105
65.5
1100
48.3 + j1.3
0.022
143
1200
42.0 – j3.1
0.093
–157
1300
36.6 – j3.4
0.159
–164
1400
33.0 – j2.0
0.207
–172
MAG
ANGLE
Operation at Different Input Frequencies
On the evaluation board shown in Figure 10, the input of
the LT5519 can be easily matched for different frequencies
by changing the capacitors, C1, C2 and C3. Capacitors C1
and C2 set the input matching frequency while C3 improves the LO to RF leakage performance. Decreasing the
value of C3 at higher input frequencies reduces its impact
on conversion gain. Table 4 lists some actual values used
at selected frequencies.
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APPLICATIO S I FOR ATIO
Table 4. Input Capacitor Values vs Frequency
FREQUENCY
(MHz)
CAPACITANCE (C1, C2)
(pF)
CAPACITANCE (C3)
(pF)
44
2200
33
70
820
33
140
220
33
240
68
15
300
39
6.8
350
27
6.8
440
18
6.8
The performance was evaluated with the input tuned for
each of these frequencies and the results are summarized
in Figures 6-8. The same IF input balun transformer was
used for all measurements. In each case, the LO input
6
Without any external components on the RF output, the
internal transformer of the LT5519 provides a good 50Ω
impedance match for RF frequencies above approximately
850MHz. Below this frequency, the return loss drops
below 10dB and degrades the conversion gain. The addition of a single 10pF capacitor in series with the RF output
improves the match at lower RF frequencies, shifting the
10dB return loss point to about 700MHz, as demonstrated
in Figure 9. This change also results in an improvement of
the conversion gain.
0
INPUT TUNED FOR EACH TEST FREQUENCY
VCC = 5V
–10 PLO = –5dBm
TA = 25°C
18
SSB NF
16
HIGH SIDE LO
14
3
12
10
1
GAIN
0
8
LOW SIDE
–1
–2
0
6
HIGH SIDE LO
VCC = 5V
PLO = –5dBm
TA = 25°C
–3
NF (dB)
LOW SIDE
2
LEAKAGE (dBm)
4
GAIN (dB)
Low Frequency Matching of the RF Output Port
20
INPUT TUNED FOR EACH TEST FREQUENCY
5
–4
frequency was adjusted to maintain an RF output frequency of 1000MHz.
4
–20
–30
HIGH SIDE LO
–40
LOW SIDE LO
–50
2
–60
0
500
100
300
400
200
INPUT FREQUENCY (MHz)
1
100
200
300
400
INPUT FREQUENCY (MHz)
5519 F08
5519 F06
Figure 6. Conversion Gain and Single Sideband Noise Figure
vs Tuned IF Input Frequency
27
INPUT TUNED FOR EACH TEST FREQUENCY
25
LOW SIDE
Figure 8. LO to RF Leakage vs Tuned IF Input Frequency
70
0
60
–1
0
NO COUT
COUT = 10pF
IIP2
–5
GAIN
–2
–10
–3
–15
–4
–20
30
19
HIGH SIDE LO
IIP3
17
20
GAIN (dB)
40
21
IIP2 (dBm)
IIP3 (dBm)
HIGH SIDE
15
COUT = 10pF
10
VCC = 5V, TA = 25°C
PLO = –5dBm
13
0
100
200
–25
–5
LOW SIDE
RETURN LOSS
–6
RETURN LOSS (dB)
50
23
500
–30
NO COUT
300
400
INPUT FREQUENCY (MHz)
0
500
5519 F07
Figure 7. IIP3 and IIP2 vs Tuned IF Input Frequency
–35
–7
700 800 900 1000 1100 1200 1300 1400
RF OUTPUT FREQUENCY (MHz)
5519 F09
Figure 9. Conversion Gain and Return Loss vs Output Frequency
5519f
9
LT5519
U
TYPICAL APPLICATIO S
(10a) Top Layer Silkscreen
(10b) Top Layer Metal
Figure 10. Evaluation Board Layout
5519f
10
LT5519
U
PACKAGE DESCRIPTIO
UF Package
16-Lead Plastic QFN (4mm × 4mm)
(Reference LTC DWG # 05-08-1692)
0.72 ±0.05
4.35 ± 0.05
2.15 ± 0.05
2.90 ± 0.05 (4 SIDES)
PACKAGE OUTLINE
0.30 ±0.05
0.65 BSC
RECOMMENDED SOLDER PAD PITCH AND DIMENSIONS
BOTTOM VIEW—EXPOSED PAD
4.00 ± 0.10
(4 SIDES)
0.75 ± 0.05
R = 0.115
TYP
0.55 ± 0.20
15
16
PIN 1
TOP MARK
1
2.15 ± 0.10
(4-SIDES)
2
(UF) QFN 0503
0.200 REF
0.00 – 0.05
0.30 ± 0.05
0.65 BSC
NOTE:
1. DRAWING CONFORMS TO JEDEC PACKAGE OUTLINE MO-220 VARIATION (WGGC)
2. ALL DIMENSIONS ARE IN MILLIMETERS
3. DIMENSIONS OF EXPOSED PAD ON BOTTOM OF PACKAGE DO NOT INCLUDE
MOLD FLASH. MOLD FLASH, IF PRESENT, SHALL NOT EXCEED 0.15mm ON ANY SIDE
4. EXPOSED PAD SHALL BE SOLDER PLATED
5519f
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights.
11
LT5519
RELATED PARTS
PART NUMBER
DESCRIPTION
COMMENTS
LT5511
High Signal Level Upconverting Mixer
RF Output to 3GHz, 17dBm IIP3, Integrated LO Buffer
LT5512
DC-3GHz High Signal Level Downconverting Mixer
RF Input to 3GHz, 21dBm IIP3, Integrated LO Buffer
LT5515
1.5GHz to 2.5GHz Direct Conversion Quadrature Demodulator
20dBm IIP3, Integrated LO Quadrature Generator
LT5516
0.8GHz to 1.5GHz Direct Conversion Quadrature Demodulator
21.5dBm IIP3, Integrated LO Quadrature Generator
LT5517
40MHz to 900MHz Direct Conversion Quadrature Demodulator
21dBm IIP3, Integrated LO Quadrature Generator
LT5520
1.3GHz to 2.3GHz High Linearity Upconverting Mixer
15.9dBm IIP3, Single Ended, 50Ω Matched RF and LO Ports
LT5522
600MHz to 2.7GHz High Signal Level Downconverting Mixer
4.5V to 5.25V Supply, 25dBm IIP3 at 900MHz, NF = 12.5dB,
50Ω Single-Ended RF and LO Ports
Infrastructure
RF Power Detectors
LT5504
800MHz to 2.7GHz RF Measuring Receiver
80dB Dynamic Range, Temperature Compensated,
2.7V to 5.25V Supply
LTC5505
300MHz to 3GHz RF Power Detectors
LTC5505-1: –28dBm to +18dBm Range, LTC5505-2: –32dBm to
+12dBm Range,Temperature Compensated, 2.7V to 6V Supply
LTC5507
100kHz to 1000MHz RF Power Detector
–34dBm to +14dBm Range, Temperature Compensated,
2.7V to 6V Supply
LTC5508
300MHz to 7GHz RF Power Detector
–32dBm to +12dBm Range, Temperature Compensated,
SC70 Package
LTC5509
300MHz to 3GHz RF Power Detector
36dB Dynamic Range, Temperature Compensated, SC70 Package
LTC5532
300MHz to 7GHz Precision RF Power Detector
Precision VOUT Offset Control, Adjustable Gain and Offset
RF Building Blocks
LT5500
1.8GHz to 2.7GHz Receiver Front End
1.8V to 5.25V Supply, Dual-Gain LNA, Mixer LO Buffer
LT5502
400MHz Quadrature IF Demodulator with RSSI
1.8V to 5.25V Supply, 70MHz to 400MHz IF, 84dB Limiting Gain,
90dB RSSI Range
LT5503
1.2GHz to 2.7GHz Direct IQ Modulator and
Upconverting Mixer
1.8V to 5.25V Supply, Four-Step RF Power Control,
120MHz Modulation Bandwidth
LT5506
500MHz Quadrature IF Demodulator with VGA
1.8V to 5.25V Supply, 40MHz to 500MHz IF, –4dB to 57dB
Linear Power Gain, 8.8MHz Baseband Bandwidth
LT5546
500MHz Ouadrature IF Demodulator with
VGA and 17MHz Baseband Bandwidth
1.8V to 5.25V Supply, 40MHz to 500MHz IF,
–7dB to 56dB Linear Power Gain
5519f
12
Linear Technology Corporation
LT/TP 0104 1K • PRINTED IN USA
1630 McCarthy Blvd., Milpitas, CA 95035-7417
(408) 432-1900 ● FAX: (408) 434-0507
●
www.linear.com
 LINEAR TECHNOLOGY CORPORATION 2004