DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D100 BD136; BD138; BD140 PNP power transistors Product specification Supersedes data of 1997 Mar 26 1999 Apr 12 Philips Semiconductors Product specification PNP power transistors BD136; BD138; BD140 PINNING FEATURES • High current (max. 1.5 A) PIN • Low voltage (max. 80 V). 1 emitter 2 collector, connected to metal part of mounting surface 3 base DESCRIPTION APPLICATIONS • General purpose power applications, e.g. driver stages in hi-fi amplifiers and television circuits. handbook, halfpage DESCRIPTION 2 PNP power transistor in a TO-126; SOT32 plastic package. NPN complements: BD135, BD137 and BD139. 3 1 1 Fig.1 2 3 Top view MAM272 Simplified outline (TO-126; SOT32) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO PARAMETER collector-base voltage CONDITIONS MIN. MAX. UNIT open emitter BD136 − −45 V BD138 − −60 V BD140 − −100 V BD136 − −45 V BD138 − −60 V − −80 V − −5 V collector-emitter voltage open base BD140 VEBO emitter-base voltage open collector IC collector current (DC) − −1.5 A ICM peak collector current − −2 A IBM peak base current − −1 A Ptot total power dissipation − 8 W Tmb ≤ 70 °C Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C 1999 Apr 12 2 Philips Semiconductors Product specification PNP power transistors BD136; BD138; BD140 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS Rth j-a thermal resistance from junction to ambient Rth j-mb thermal resistance from junction to mounting base VALUE UNIT 100 K/W 10 K/W note 1 Note 1. Refer to TO-126 (SOT32) standard mounting conditions. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER CONDITIONS MIN. TYP. MAX. UNIT IE = 0; VCB = −30 V − − −100 nA IE = 0; VCB = −30 V; Tj = 125 °C − − −10 µA − − −100 nA IC = −5 mA 40 − − IC = −150 mA 63 − 250 IC = −500 mA 25 − − IC = −150 mA; VCE = −2 V; BD136-10; BD138-10; BD140-10 (see Fig.2) 63 − 160 BD136-16; BD138-16; BD140-16 100 − 250 collector cut-off current IEBO emitter cut-off current IC = 0; VEB = −5 V hFE DC current gain VCE = −2 V; (see Fig.2) DC current gain VCEsat collector-emitter saturation voltage IC = −500 mA; IB = −50 mA − − −0.5 V VBE base-emitter voltage IC = −500 mA; VCE = −2 V − − −1 V fT transition frequency IC = −50 mA; VCE = −5 V; f = 100 MHz − 160 − MHz h FE1 ----------h FE2 DC current gain ratio of the complementary pairs IC = 150 mA; VCE = 2 V − 1.3 1.6 1999 Apr 12 3 Philips Semiconductors Product specification PNP power transistors BD136; BD138; BD140 MBH730 160 handbook, full pagewidth VCE = −2 V hFE 120 80 40 0 −10−1 −1 −10 −102 Fig.2 DC current gain; typical values. 1999 Apr 12 4 −103 IC (mA) −104 Philips Semiconductors Product specification PNP power transistors BD136; BD138; BD140 PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; mountable to heatsink, 1 mounting hole; 3 leads SOT32 E A P1 P D L1 L 1 2 bp 3 e1 c w M e Q 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp c D E e e1 L L1(1) max Q P P1 w mm 2.7 2.3 0.88 0.65 0.60 0.45 11.1 10.5 7.8 7.2 4.58 2.29 16.5 15.3 2.54 1.5 0.9 3.2 3.0 3.9 3.6 0.254 Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT32 1999 Apr 12 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-03-04 TO-126 5 Philips Semiconductors Product specification PNP power transistors BD136; BD138; BD140 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1999 Apr 12 6 Philips Semiconductors Product specification PNP power transistors BD136; BD138; BD140 NOTES 1999 Apr 12 7 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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