PHILIPS BSR33

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D109
BSR30; BSR31; BSR33
PNP medium power transistors
Product specification
Supersedes data of 1997 Apr 01
1999 Apr 26
Philips Semiconductors
Product specification
PNP medium power transistors
BSR30; BSR31; BSR33
FEATURES
PINNING
• High current (max. 1 A)
PIN
• Low voltage (max. 80 V).
APPLICATIONS
DESCRIPTION
1
emitter
2
collector
3
base
• Telephony and general industrial applications
• Thick and thin-film circuits.
handbook, halfpage
DESCRIPTION
2
PNP medium power transistor in a SOT89 plastic
package. NPN complements: BSR40; BSR41 and BSR43.
3
1
MARKING
1
TYPE NUMBER
BR1
BSR31
BR2
BSR33
BR4
3
Bottom view
MARKING CODE
BSR30
2
MAM297
Fig.1 Simplified outline (SOT89) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO
VCEO
PARAMETER
collector-base voltage
CONDITIONS
MIN.
MAX.
UNIT
open emitter
BSR30; BSR31
−
−70
V
BSR33
−
−90
V
BSR30; BSR31
−
−60
V
BSR33
−
−80
V
collector-emitter voltage
open base
VEBO
emitter-base voltage
−
−5
V
IC
collector current (DC)
−
−1
A
ICM
peak collector current
−
−2
A
IBM
peak base current
Ptot
total power dissipation
Tstg
open collector
−
−200
mA
−
1.35
W
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Tamb ≤ 25 °C; note 1
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 6 cm2.
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
1999 Apr 26
2
Philips Semiconductors
Product specification
PNP medium power transistors
BSR30; BSR31; BSR33
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
thermal resistance from junction to ambient
Rth j-s
thermal resistance from junction to soldering point
VALUE
UNIT
93
K/W
13
K/W
note 1
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2.
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
IE = 0; VCB = −60 V
−
−100
nA
IE = 0; VCB = −60 V; Tj = 150 °C
−
−50
µA
−
−100
nA
BSR30
10
−
BSR31; BSR33
30
−
BSR30
40
120
BSR31; BSR33
100
300
BSR30
30
−
BSR31; BSR33
50
−
collector cut-off current
IEBO
emitter cut-off current
IC = 0; VEB = −5 V
hFE
DC current gain
IC = −100 µA; VCE = −5 V; note 1
DC current gain
DC current gain
IC = −100 mA; VCE = −5 V; note 1
IC = −500 mA; VCE = −5 V; note 1
VCEsat
collector-emitter saturation
voltage
IC = −150 mA; IB = −15 mA; note 1
−
−0.25
IC = −500 mA; IB = −50 mA; note 1
−
−0.5
V
VBEsat
base-emitter saturation voltage
IC = −150 mA; IB = −15 mA; note 1
−
−1
V
IC = −500 mA; IB = −50 mA; note 1
−
−1.2
V
IC = −50 mA; VCE = −10 V;
f = 100 MHz
100
−
MHz
fT
transition frequency
Note
1. Pulse test: tp = 300 µs; δ < 0.01.
1999 Apr 26
3
V
Philips Semiconductors
Product specification
PNP medium power transistors
BSR30; BSR31; BSR33
PACKAGE OUTLINE
Plastic surface mounted package; collector pad for good heat transfer; 3 leads
SOT89
B
D
A
b3
E
HE
L
1
2
3
c
b2
w M
b1
e1
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
b1
b2
b3
c
D
E
e
e1
HE
L
min.
w
mm
1.6
1.4
0.48
0.35
0.53
0.40
1.8
1.4
0.44
0.37
4.6
4.4
2.6
2.4
3.0
1.5
4.25
3.75
0.8
0.13
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
SOT89
1999 Apr 26
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
4
Philips Semiconductors
Product specification
PNP medium power transistors
BSR30; BSR31; BSR33
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Apr 26
5
Philips Semiconductors
Product specification
PNP medium power transistors
BSR30; BSR31; BSR33
NOTES
1999 Apr 26
6
Philips Semiconductors
Product specification
PNP medium power transistors
BSR30; BSR31; BSR33
NOTES
1999 Apr 26
7
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© Philips Electronics N.V. 1999
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Printed in The Netherlands
115002/00/03/pp8
Date of release: 1999 Apr 26
Document order number:
9397 750 05769