PD - 95954
IRL3202SPbF
Advanced Process Technology
Surface Mount
l Optimized for 4.5V-7.0V Gate Drive
l Ideal for CPU Core DC-DC Converters
l Fast Switching
l Lead-Free
Description
HEXFET® Power MOSFET
l
D
l
VDSS = 20V
RDS(on) = 0.016Ω
G
ID = 48A
S
These HEXFET Power MOSFETs were designed
specifically to meet the demands of CPU core DC-DC
converters in the PC environment. Advanced
processing techniques combined with an optimized
gate oxide design results in a die sized specifically to
offer maximum efficiency at minimum cost.
The D2Pak is a surface mount power package capable
of accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible onresistance in any existing surface mount package. The
D2Pak is suitable for high current applications because
of its low internal connection resistance and can
dissipate up to 2.0W in a typical surface mount
application.
D 2 Pak
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
V GS
VGSM
EAS
IAR
EAR
dv/dt
TJ
TSTG
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Gate-to-Source Voltage
(Start Up Transient, tp = 100µs)
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
Units
48
30
190
69
0.56
± 10
14
A
W
W/°C
V
V
270
29
6.9
5.0
-55 to + 150
mJ
A
mJ
V/ns
300 (1.6mm from case )
°C
Thermal Resistance
Parameter
RθJC
RθJA
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
Typ.
Max.
Units
1.8
40
°C/W
12/21/04
IRL3202SPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
V(BR)DSS
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LS
Internal Source Inductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
IGSS
Min.
20
0.70
28
Typ.
0.029
9.8
100
63
82
Max. Units
Conditions
V
VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
0.019
VGS = 4.5V, ID = 29A
Ω
0.016
VGS = 7.0V, ID = 29A
V
VDS = VGS , ID = 250µA
S
VDS = 16V, ID = 29A
25
VDS = 20V, VGS = 0V
µA
250
VDS = 10V, V GS = 0V, TJ = 150°C
100
VGS = 10V
nA
-100
VGS = -10V
43
ID = 29A
12
nC VDS = 16V
13
VGS = 4.5V, See Fig. 6
VDD = 10V
ID = 29A
ns
RG = 9.5Ω, VGS = 4.5V
RD = 0.3Ω,
Between lead,
nH
7.5
and center of die contact
2000
VGS = 0V
800
pF
VDS = 15V
290
= 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
I SM
V SD
t rr
Q rr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
48
showing the
A
G
integral reverse
190
S
p-n junction diode.
1.3
V
TJ = 25°C, IS = 29A, VGS = 0V
68 100
ns
TJ = 25°C, IF = 29A
130 190
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting TJ = 25°C, L = 0.64mH
R G = 25Ω, IAS = 29A.
ISD ≤ 29A, di/dt ≤ 63A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Uses IRL3202 data and test conditions
** When mounted on FR-4 board using minimum recommended footprint.
For recommended footprint and soldering techniques refer to application note #AN-994.
IRL3202SPbF
1000
1000
VGS
7.50V
5.00V
4.00V
3.50V
3.00V
2.50V
BOTTOM 2.00V
BOTTOM 1.75V
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
100
100
10
2.0V
1
0.1
20µs PULSE WIDTH
TJ = 25 °C
1
10
10
100
RDS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
2.0
TJ = 25 ° C
100
TJ = 150 ° C
10
V DS = 15V
20µs PULSE WIDTH
3
4
Fig 3. Typical Transfer Characteristics
1
10
100
Fig 2. Typical Output Characteristics
1000
VGS , Gate-to-Source Voltage (V)
20µs PULSE WIDTH
TJ = 150 °C
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
2
2.0V
1
0.1
VDS , Drain-to-Source Voltage (V)
1
VGS
7.50V
5.00V
4.00V
3.50V
3.00V
2.50V
BOTTOM 2.00V
BOTTOM 1.75V
TOP
TOP
5
ID = 48A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 4.5V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
IRL3202SPbF
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
C, Capacitance (pF)
3000
2500
Ciss
2000
1500
Coss
1000
Crss
500
0
1
10
15
VGS , Gate-to-Source Voltage (V)
3500
ID = 29A
VDS = 16V
12
9
6
3
0
100
0
10
VDS , Drain-to-Source Voltage (V)
30
40
50
60
70
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
I D , Drain Current (A)
ISD , Reverse Drain Current (A)
20
QG , Total Gate Charge (nC)
100
100
TJ = 150 ° C
TJ = 25 ° C
10
1
0.2
V GS = 0 V
0.8
1.4
2.0
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
2.6
100us
1ms
10
1
10ms
TC = 25 ° C
TJ = 150 ° C
Single Pulse
1
10
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
100
IRL3202SPbF
600
EAS , Single Pulse Avalanche Energy (mJ)
50
ID , Drain Current (A)
40
30
20
10
0
25
50
75
100
125
150
TC , Case Temperature ( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
TOP
500
BOTTOM
ID
13A
18A
29A
400
300
200
100
0
25
50
75
100
125
Starting TJ , Junction Temperature ( °C)
150
Fig 10. Maximum Avalanche Energy
Vs. Drain Current
Thermal Response (Z thJC )
10
1 D = 0.50
0.20
0.10
0.1
0.01
0.00001
PDM
0.05
0.02
0.01
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1
0.018
RDS(on), Drain-to-Source On Resistance ( Ω )
R DS (on), Drain-to-Source On Resistance( Ω )
IRL3202SPbF
VGS = 4.5V
0.016
0.014
VGS = 7.0V
0.012
0.010
0
10
20
30
40
50
I D , Drain Current (A)
Fig 12. On-Resistance Vs. Drain Current
60
0.025
0.020
ID = 48A
0.015
0.010
0.0
2.0
4.0
6.0
V GS , Gate-to-Source Voltage (V)
Fig 13. On-Resistance Vs. Gate Voltage
8.0
A
IRL3202SPbF
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information
T H IS IS AN IR F 530S WIT H
LOT CODE 8024
AS S E MB L E D ON WW 02, 2000
IN T H E AS S E MB L Y L INE "L "
INT E R NAT IONAL
R E CT IF IE R
L OGO
Note: "P" in as s embly line
pos ition indicates "Lead-F ree"
P AR T NU MB E R
F 530S
AS S E MB LY
LOT CODE
OR
INT E R NAT IONAL
R E CT IF IE R
L OGO
AS S E MB L Y
L OT CODE
PAR T NU MB E R
F 530S
DAT E CODE
P = DE S IGNAT E S L E AD-F R E E
PR ODU CT (OPT IONAL )
YE AR 0 = 2000
WE E K 02
A = AS S E MB L Y S IT E CODE
DAT E CODE
YE AR 0 = 2000
WE E K 02
L INE L
IRL3202SPbF
D2Pak Tape & Reel Information
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
1.65 (.065)
0.368 (.0145)
0.342 (.0135)
15.42 (.609)
15.22 (.601)
24.30 (.957)
23.90 (.941)
TRL
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.12/04
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/