RH118 - SPEC NO. 05-08-5025

SPEC NO. 05-08-5025 REV. P
RH118, HIGH SPEED OPERATIONAL AMPLIFIER
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REV
0
A
B
C
D
E
F
G
H
REVISION RECORD
DESCRIPTION
DATE
07/23/96
12/11/97
INITIAL RELEASE
• PAGE 2: ADDED PARAGRAPHS 3.2.1, 3.2.2, AND 3.2.3. PARAGRAPH 3.3.b, ADDED “SEE
PARAGRAPH 3.2”.
• PAGE 3: ADDED PARAGRAPHS 3.8.1, 3.8.2, AND 3.2.3.
• PAGE 4: PARAGRAPH 3.12, WAFER LOT ACCEPTANCE, REDEFINED. PARAGRAPH 4.4.2,
GROUP B INSPECTION, REDEFINED.
• PAGE 5: PARAGRAPH 4.4.3, GROUP D INSPECTION, REDEFINED. PARAGRAPH 4.5, SOURCE
INSPECTION, REDEFINED.
• PAGE 6: ADDED θja AND θjc TO FIGURE 1, TO5 CASE OUTLINE.
• PAGE 7: ADDED θja AND θjc TO FIGURE 2, CERAMIC DIP CASE OUTLINE.
• PAGE 8: ADDED θja AND θjc TO FIGURE 3, BOTTOM BRAZED FLATPACK CASE OUTLINE.
PAGE 4, AMENDED PARAGRAPHS 4.1 AND 4.1.1 TAKING EXCEPTION TO ANALYSIS OF
CATASTROPHIC FAILURES.
PAGE 6, 7, 8, FIGURE 1, 2, 3 CHANGED θja AND θjc.
• PAGE 3: PARAGRAPHS 3.2.1, 3.2.2, 3.2.3, 3.2.4, FIGURES 1, 2, 3, AND 4 REMOVED.
• PAGE 4: PARAGRAPHS 3.7 AND PARAGRAPH 3.9 CHANGED VERBIAGE IN LINE 2 OF EACH
PARAGRAPH.
• PAGE 5: PARAGRAPHS 4.3, 4.4.1, 4.4.2.2 CHANGED VERBIAGE IN LINE 2 OF EACH
PARAGRAPH.
• PAGE 6: PARAGRAPHS 4.4.3.2 CHANGED VERBIAGE IN LINE 1.
PAGE 9: CHANGED θja FROM +225°C/W TO +170°C/W AND θjc FROM +40°C/W TO 18°C/W PER
PACKAGE ENGINEERING.
PAGE 9: CHANGED θja FROM +170°C/W TO 160°C/W PER PACKAGE ENGINEERING. ADDED
OPTION 4, W10 LEAD FLATPACK GLASS SEALED.
CHANGED DELTA VOS LIMITS FROM +1.0mV TO +2.0mV. CONVERSION OF SPECIFICATION
FROM WORD PERFECT TO MSWORD. REMOVED BOTTOM BRAZED FLATPACK OPTION
AND ALL REFERENCES TO BOTTOM BRAZED FLATPACK.
• CONVERSION FROM WORD PERFECT TO MICROSOFT WORD. INCREASED SPEC PAGES TO
21 TOTAL.
•
02/23/98
11/17/99
11/19/99
09/05/00
01/09/01
08/31/01
04/15/03
PAGE 2, AN ADDITIONAL REVISION RECORD PAGE WAS INSTALLED.
CONTINUED ON NEXT PAGE…..
CAUTION: ELECTROSTATIC DISCHARGE SENSITIVE PART
REVISION
INDEX
REVISION
INDEX
PAGE NO.
REVISION
PAGE NO.
REVISION
APPLICATION
1
P
18
P
ORIG
DSGN
ENGR
MFG
CM
QA
PROG
FUNCT
2
P
19
P
3
P
20
P
4
P
21
P
5
P
6
P
7
P
8
P
9
P
10
P
11
P
12
P
13
P
14
P
15
P
16
P
17
P
LINEAR TECHNOLOGY CORPORATION
MILPITAS, CALIFORNIA
TITLE:
MICROCIRCUIT, LINEAR,
RH118, HIGH SPEED
OPERATIONAL AMPLIFIER
SIZE
SIGNOFFS
DATE
CAGE CODE
64155
CONTRACT:
DRAWING NUMBER
05-08-5025
REV
P
FOR OFFICIAL USE ONLY
_________________________________________________________________________________________________
LINEAR TECHNOLOGY CORPORATION
PAGE 1 of 21
SPEC NO. 05-08-5025 REV. P
RH118, HIGH SPEED OPERATIONAL AMPLIFIER
_________________________________________________________________________________________________
REVISION RECORD
DESCRIPTION
REV
•
DATE
PAGE 4:
PARAGRAPH 3.4 , MOVED PARAGRAPH AND NOTES FROM PAGE 3.
NOTE 2: CHANGED NOTES SHOWN ON PAGE 19 TO PAGE 20.
PARAGRAPH 3.6, TABLE IA CHANGED TO TABLE II.
PARAGRAPH 3.7, TABLE III CHANGED TO TABLE IV.
PARAGRAPH 3.9, TABLE II CHANGED TO TABLE III.
•
PAGE 5:
PARAGRAPH 3.11.1 WAS CHANGED FROM “…dosage rate of approximately 20 Rads per
second” TO “…dosage rate of less than or equal to 10 Rads per second”.
PARAGRAPHS 4.1 THROUGH 4.4.2 CHANGES WERE DONE TO CLARIFY GROUP SAMPLING.
• PAGE 6:
PARAGRAPHS 4.4.2.1 THROUGH 4.4.3 CHANGES WERE DONE TO CLARIFY GROUP SAMPLING.
PARAGRAPHS 4.6.2 THROUGH 4.6.4 WERE RE-WRITTEN. THESE DATA PROVIDED, AND DATA
AVAILABLE.
• PAGE 7:
PARAGRAPH 4.6.10 NOTE, ADDED FURTHER EXPLANATION OF MINIMUM DELIVERED DATA.
•
PAGES 8 THROUGH 18, ALL FIGURE TITLES CHANGED TO HAVE DEVICE OPTIONS AND
PACKAGE TYPES AT TOP OF PAGE, AND HAVE ALL FIGURES AT BOTTOM OF PAGE.
•
PAGE 19, TABLE IA WAS CHANGED TO TABLE II
•
PAGE 20, TABLE NOTES NOW REFLECTS TABLE I AND TABLE II BECAUSE OF CHANGE ON
PAGE 19.
•
PAGE 21, TABLE II CHANGED TO TABLE III, TABLE III CHANGED TO TABLE IV.
J
•
PAGE 10, CHANGED OUTLINE DRAWING PIN 1 NOTCH MOVED TO INSIDE LEAD
LOCATION.
05/19/03
K
L
•
•
PAGE 5, CHANGED INITIAL RATE OF RADS TO 240 RADS/SEC.
03/15/05
01/07/08
•
•
PAGE 5, CHANGED IN BOTH PARAGRAPHS 4.2, 4.3 IN CONJUNCTION TO 3.3 CHANGED TO
3.4 AND PARAGRAPH 4.3 CHANGED 3.1.1 TO 3.1 AND 3.2.1 TO 3.1.1
PAGE 4 PARAGRAPH 3.10.3 ADDED OPTION 3 IS ALLOY 42 FOR FLATPACK.
CHANGED FIGURE 6 (W) PKG PIN 9 COMP3 TO 2 PIN 6 COMP2 TO 3, FIGURE 7 STATIC B/I
NOTES 3 CHANGE B/I VOLTAGES V3= FROM (+ 1.0V TO + 1.1V) TO (+ 0.95V TO + 1.15V),
FIGURE 8 DYNAMIC B/I ADDED 30pF, FIGURE 9 STATIC B/I NOTES 3 CHANGE B/I
VOLTAGES V3= FROM (+ 1.0V TO + 1.1V) TO (+0.95V TO +1.15V), FIGURE 10 DYNAMIC B/I
ADDED 30PF AND 10KΏ, FIGURE 11 STATIC B/I NOTES 2, 3 CHANGE Tj = FROM 191°C TO
+165°C ADDED Tc = 139°C CHANGE Ta = FROM 125°C TO 100°C Tj = FROM 216°C TO +190°C
AND Ta FROM 150°C TO 125°C, FIGURE 12 DYNAMIC BI NOTES:2, 3 CHANGED Tj = FROM
170°C TO +159°C ADDED Tc=135°C MIN. AT AMBIENT OF 100°C CHANGE Ta = 125°C TO Tj =
+184°C MAX. AT AMBIENT OF 125°C, AND ADDED 30pF CHANGE 402Ώ TO 301Ώ PER.
PRODUCT ENG.
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LINEAR TECHNOLOGY CORPORATION
PAGE 2 of 21
SPEC NO. 05-08-5025 REV. P
RH118, HIGH SPEED OPERATIONAL AMPLIFIER
_________________________________________________________________________________________________
REVISION RECORD
DESCRIPTION
REV
M
DATE
• PAGE 6:
PARAGRAPH 3.11.1 CHANGED VERBIAGE
• PAGE 5:
PARAGRAPH 3.10.3 CHANGED OPTION 2 TO ALLOY 42 PACKAGE REQUIREMENT.
04/30/08
N
•
•
PAGE 6, PARAGRAPH 4.4.2 CHANGED VERBIAGE.
PAGE 11, FIGURE 3 NOTE 2 ADDED TO LEAD THICKNESS.
06/12/08
P
•
PAGE 17, STATIC BURN-IN CIRCUIT FIGURE. Ta CHANGED FROM +100°C
TO +125°C; Tj CHANGED FROM +165°C TO +164°C; BURN-IN VOLTAGES, V1
CHANGED FROM “+20V TO +22V” TO “+18V TO +19.8V”, V2 CHANGED FROM
“-20V TO -22V” TO “-18V TO -19.8V”.
6/14/13
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LINEAR TECHNOLOGY CORPORATION
PAGE 3 of 21
SPEC NO. 05-08-5025 REV. P
RH118, HIGH SPEED OPERATIONAL AMPLIFIER
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1.0
SCOPE:
1.1
2.0
This specification defines the performance and test requirements for a microcircuit processed to a space
level manufacturing flow.
APPLICABLE DOCUMENTS:
2.1
Government Specifications and Standards: the following documents listed in the Department of Defense
Index of Specifications and Standards, of the issue in effect on the date of solicitation, form a part of this
specification to the extent specified herein.
SPECIFICATIONS:
2.2
3.0
MIL-PRF-38535
Integrated Circuits (Microcircuits) Manufacturing, General Specification for
MIL-STD-883
Test Method and Procedures for Microcircuits
MIL-STD-1835
Microcircuits Case Outlines
Order of Precedence: In the event of a conflict between the documents referenced herein and the contents
of this specification, the order of precedence shall be this specification, MIL-PRF-38535 and other
referenced specifications.
REQUIREMENTS:
3.1
General Description: This specification details the requirements for the RH118 High Precision High
Speed Operational Amplifier, processed to space level manufacturing flow.
3.2
Part Number:
3.3
3.2.1
Option 1 – RH118H (TO5 Metal Can, 8 Leads)
3.2.2
Option 2 – RH118J8 (Ceramic Dip, 8 Leads)
3.2.3
Option 3 – RH118W (Glass Sealed Flatpack, 10 Leads)
Part Marking Includes:
a.
LTC Logo
b.
LTC Part Number (See Paragraph 3.2)
c.
Date Code
d.
Serial Number
e.
ESD Identifier per MIL-PRF-38535, Appendix A
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PAGE 4 of 21
SPEC NO. 05-08-5025 REV. P
RH118, HIGH SPEED OPERATIONAL AMPLIFIER
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3.4
The Absolute Maximum Ratings:
Supply Voltage
. . . . . . .
Differential Input Current (See Note 1)
Input Voltage (See Note 2) . . . .
Output Short Circuit Duration . . .
. .
Operating Temperature Range
. . .
Storage Temperature Range
Lead Temperature (Soldering, 10 Sec)
. . . . . . . . . +20V
. . . . . . . . . +10mA
. . . . . . . . . +20V
. . . . . . . . . Indefinite
. . . . . . . . . -55°C to +125°C
. . . . . . . . . -65°C to +150°C
. . . . . . . . . +300°C
Note 1:
The inputs are shunted with back-to-back zeners for overvoltage protection. Excessive current
will flow if a differential voltage greater than 5V is applied to the inputs.
Note 2:
For supply voltages less than +15V, the maximum input voltage is equal to the supply voltage.
(Notes also shown on page 20)
3.5
Electrostatic discharge sensitivity, ESDS, shall be Class 2.
3.6
Electrical Performance Characteristics: The electrical performance characteristics shall be as specified in
Table I and Table II.
3.7
Electrical Test Requirements: Screening requirements shall be in accordance with 4.1 herein,
MIL-STD-883, Method 5004, and as specified in Table IV herein.
3.8
Burn-In Requirement:
3.8.1
Option 1 (TO5): Static Burn-In, Figure 7; Dynamic Burn-In, Figure 8
3.8.2
Option 2 (Ceramic Dip): Static Burn-In, Figure 9; Dynamic Burn-In, Figure 10
3.8.3
Option 3 (Glass Sealed Flatpack) : Static Burn-In, Figure 11; Dynamic Burn-In, Figure 12
3.9
Delta Limit Requirement: Delta limit parameters are specified in Table III herein, are calculated after each
burn-in, and the delta rejects are included in the PDA calculation.
3.10
Design, Construction, and Physical Dimensions: Detail design, construction, physical, dimensions, and
electrical requirements shall be specified herein.
3.10.1
Mechanical / Packaging Requirements: Case outlines and dimensions are in accordance with
Figure 1, Figure 2, and Figure 3.
3.10.2
Terminal Connections: The terminal connections shall be as specified in Figure 4, Figure 5,
and Figure 6.
3.10.3
Lead Material and Finish: The lead material and finish for Device Options 1, shall be Kovar
and options 2, 3 are Alloy 42. The lead finishes shall be hot solder dip (Finish letter A) in
accordance with MIL-PRF-38535.
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PAGE 5 of 21
SPEC NO. 05-08-5025 REV. P
RH118, HIGH SPEED OPERATIONAL AMPLIFIER
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3.11
4.0
Radiation Hardness Assurance (RHA):
3.11.1
The manufacturer shall perform a lot sample test as an internal process monitor for total dose
radiation tolerance. The sample test is performed with MIL- STD-883 TM1019 Condition A as
a guideline.
3.11.2
For guaranteed radiation performance to MIL-STD-883, Method 1019, total dose irradiation,
the manufacturer will provide certified RAD testing and report through an independent test
laboratory when required as a customer purchase order line item.
3.11.3
Total dose bias circuit is specified in Figure 13.
3.12
Wafer Lot Acceptance: Wafer lot acceptance shall be in accordance with MIL-PRF-38535, Appendix A,
except for the following: Topside glassivation thickness shall be a minimum of 4KÅ.
3.13
Wafer Lot Acceptance Report: SEM is performed per MIL-STD-883, Method 2018 and copies of SEM
photographs shall be supplied with the Wafer Lot Acceptance Report as part of a Space Data Pack when
specified as a customer purchase order line item.
VERIFICATION (QUALITY ASSURANCE PROVISIONS)
4.1
Quality Assurance Provisions: Quality Assurance provisions shall be in accordance with MIL-PRF-38535.
Linear Technology is a QML certified company and all Rad Hard candidates are assembled on qualified
Class S manufacturing lines.
4.2
Sampling and Inspection: Sampling and Inspection shall be in accordance with MIL-STD-883, Method
5005 with QML allowed and TRB approved deviations in conjunction with paragraphs 3.1.1, 3.2.1, and
3.4 of the test method.
4.3
Screening: Screening requirements shall be in accordance with MIL-STD-883, Method 5004 with QML
allowed and TRB approved deviations in conjunction with paragraphs 3.1, 3.1.1, and 3.4 of the test
method. Electrical testing shall be as specified in Table IV herein.
4.3.1
4.4
Analysis of catastrophic (open/short) failures from burn-in will be conducted only when a lot fails
the burn-in or re-burn-in PDA requirements.
Quality Conformance Inspection: Quality conformance inspection shall be in accordance with 4.2 and 4.3
herein and as follows:
4.4.1
Group A Inspection: Group A inspection shall be performed in accordance with 4.1 herein, per
MIL-STD-883, Method 5005, and specified in Table IV herein.
4.4.2
Group B Inspection: When purchased, a full Group B is performed on an inspection lot. As a
minimum, Subgroups 1-4 plus 6 are performed on every assembly lot, and Subgroup B2
(Resistance to Solvents / Mark Permanency) and Subgroup B3 (Solderability) are performed prior
to the first shipment from any inspection lot and Attributes provided when a Full Space Data Pack
is ordered. Subgroup B5 (Operating Life) is performed on each wafer lot. This subgroup may or
may not be from devices built in the same package style as the current inspection lot. Attributes
and variables data for this subgroup will be provided upon request at no charge.
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LINEAR TECHNOLOGY CORPORATION
PAGE 6 of 21
SPEC NO. 05-08-5025 REV. P
RH118, HIGH SPEED OPERATIONAL AMPLIFIER
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4.4.2.1
Group B, Subgroup 2c = 10%
Group B, Subgroup 3 = 10%
Group B, Subgroup 5 = *5%
(*per wafer or inspection lot
whichever is the larger quantity)
Group B, Subgroup 4 = 5%
Group B, Subgroup 6 = 15%
4.4.2.2 All footnotes pertaining to Table IIa in MIL-STD-883, Method 5005 apply. The quantity
(accept number) of all other subgroups are per MIL-STD-883, Method 5005, Table IIa.
4.4.3
Group D Inspection: When purchased, a full Group D is performed on an inspection lot. As a
minimum, periodic full Group D sampling is performed on each package family for each assembly
location every 26 weeks. A generic Group D Summary is provided when a full Space Data Pack is
ordered.
4.4.3.1
Group D, Subgroups 3, 4 and 5 = 15% each (Sample Size Series).
4.4.3.2
4.5
4.6
All footnotes pertaining to Table IV in MIL-STD-883, Method 5005 apply. The
quantity (accept number) or sample number and accept number of all other subgroups
are per MIL-STD-883, Method 5005, Table IV.
Source Inspection:
4.5.1
The manufacturer will coordinate Source Inspection at wafer lot acceptance and pre-seal internal
visual.
4.5.2
The procuring activity has the right to perform source inspection at the supplier’s facility prior to
shipment for each lot of deliverables when specified as a customer purchase order line item. This
may include wafer lot acceptance and final data review.
Deliverable Data: Deliverable data that will ship with devices when a Space Data Pack is ordered:
4.6.1
Lot Serial Number Sheets identifying all devices accepted through final inspection by serial
number.
4.6.2
100% attributes (completed lot specific traveler; includes Group A Summary)
4.6.3
Burn-In Variables Data and Deltas (if applicable)
4.6.4
Group B2, B3, and B5 Attributes (Variables data, if performed on lot shipping)
4.6.5
Generic Group D data (4.4.3 herein)
4.6.6
SEM photographs (3.13 herein)
4.6.7
Wafer Lot Acceptance Report (3.13 herein)
4.6.8
X-Ray Negatives and Radiographic Report
4.6.9
A copy of outside test laboratory radiation report if ordered
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LINEAR TECHNOLOGY CORPORATION
PAGE 7 of 21
SPEC NO. 05-08-5025 REV. P
RH118, HIGH SPEED OPERATIONAL AMPLIFIER
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4.6.10 Certificate of Conformance certifying that the devices meet all the requirements of this
specification and have successfully completed the mandatory tests and inspections herein.
Note: Items 4.6.1 and 4.6.10 will be delivered as a minimum, with each shipment. This is noted
on the Purchase Order Review Form as “No Charge Data”.
5.0
Packaging Requirements: Packaging shall be in accordance with Appendix A of MIL-PRF-38535. All devices
shall be packaged in conductive material or packaged in anti-static material with an external conductive field
shielding barrier.
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LINEAR TECHNOLOGY CORPORATION
PAGE 8 of 21
SPEC NO. 05-08-5025 REV. P
RH118, HIGH SPEED OPERATIONAL AMPLIFIER
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DEVICE OPTION # 1
(H) TO5 / 8 LEADS CASE OUTLINE
θja = +150°C/W
θjc = +40°C/W
FIGURE 1
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PAGE 9 of 21
SPEC NO. 05-08-5025 REV. P
RH118, HIGH SPEED OPERATIONAL AMPLIFIER
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DEVICE OPTION # 2
(J8) CERAMIC DIP / 8 LEADS CASE OUTLINE
NOTE: 1. LEAD DIMENSIONS APPLY TO SOLDER DIP OR TIN PLATE LEADS.
2. THIS DIMENSION ALLOWS FOR OFF-CENTER LID, MENISCUS, AND GLASS OVERRUN.
3. 8 LEAD, D MAX = 0.405 (10.287)
θja = +110°C/W
θjc = +30°C/W
FIGURE 2
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PAGE 10 of 21
SPEC NO. 05-08-5025 REV. P
RH118, HIGH SPEED OPERATIONAL AMPLIFIER
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DEVICE OPTION # 3
(W10) GLASS SEALED FLATPACK / 10LEADS CASE OUTLINE
NOTE: 1. THIS DIMENSION ALLOWS FOR OFFCENTER LID, MENISCUS AND GLASS OVER RUN.
NOTE: 2. INCREASE DIMENSION BY 0.003 INCH
WHEN LEAD FINISH IS APPLIED (SOLDER DIPPED).
θja = +170°C/W
θjc = +40°C/W
FIGURE 3
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PAGE 11 of 21
SPEC NO. 05-08-5025 REV. P
RH118, HIGH SPEED OPERATIONAL AMPLIFIER
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TERMINAL CONNECTIONS
DEVICE OPTION #1, TO5, 8 LEAD METAL CAN
DEVICE OPTION #2, CERAMIC, 8 LEAD
FIGURE 4
FIGURE 5
DEVICE OPTION #3, GLASS SEALED, 10 LEAD FLATPACK
FIGURE 6
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PAGE 12 of 21
SPEC NO. 05-08-5025 REV. P
RH118, HIGH SPEED OPERATIONAL AMPLIFIER
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STATIC BURN-IN CIRCUIT
OPTION 1, T05 METAL CAN / 8 LEADS
FIGURE 7
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PAGE 13 of 21
SPEC NO. 05-08-5025 REV. P
RH118, HIGH SPEED OPERATIONAL AMPLIFIER
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DYNAMIC BURN-IN CIRCUIT
OPTION 1, TO5 METAL CAN 8 LEADS
FIGURE 8
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PAGE 14 of 21
SPEC NO. 05-08-5025 REV. P
RH118, HIGH SPEED OPERATIONAL AMPLIFIER
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STATIC BURN-IN CIRCUIT
OPTION #2, CERAMIC DIP / 8 LEADS
FIGURE 9
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PAGE 15 of 21
SPEC NO. 05-08-5025 REV. P
RH118, HIGH SPEED OPERATIONAL AMPLIFIER
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DYNAMIC BURN-IN CIRCUIT
OPTION 2, CERAMIC DIP / 8 LEADS
FIGURE 10
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PAGE 16 of 21
SPEC NO. 05-08-5025 REV. P
RH118, HIGH SPEED OPERATIONAL AMPLIFIER
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STATIC BURN-IN CIRCUIT
OPTION #3, GLASS SEALED FLATPACK, 10 LEADS
FIGURE 11
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LINEAR TECHNOLOGY CORPORATION
PAGE 17 of 21
SPEC NO. 05-08-5025 REV. P
RH118, HIGH SPEED OPERATIONAL AMPLIFIER
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DYNAMIC BURN-IN CIRCUIT
OPTION 3, GLASS SEALED
FLATPACK / 10 LEADS
FIGURE 12
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PAGE 18 of 21
SPEC NO. 05-08-5025 REV. P
RH118, HIGH SPEED OPERATIONAL AMPLIFIER
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TOTAL DOSE BIAS CIRCUIT
FIGURE 13
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LINEAR TECHNOLOGY CORPORATION
PAGE 19 of 21
SPEC NO. 05-08-5025 REV. P
RH118, HIGH SPEED OPERATIONAL AMPLIFIER
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TABLE I: ELECTRICAL CHARACTERISTICS (PRE-IRRADIATION) Note 3
TABLE II: ELECTRICAL CHARACTERISTICS (POST-IRRADIATION) Note 6
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LINEAR TECHNOLOGY CORPORATION
PAGE 20 of 21
SPEC NO. 05-08-5025 REV. P
RH118, HIGH SPEED OPERATIONAL AMPLIFIER
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TABLE III: POST BURN-IN ENDPOINTS AND DELTA LIMIT REQUIREMENTS
PARAMETER
VOS
+IIB
-IIB
ENDPOINT LIMIT
MIN
MAX
-4.0
4.0
1.0
250
1.0
250
DELTA
MIN
-2.0
-25
-25
MAX
2.0
25
25
UNITS
mV
nA
nA
TABLE IV: ELECTRICAL TEST REQUIREMENTS
MIL-STD-883 TEST REQUIREMENTS
FINAL ELECTRICAL TEST REQUIREMENTS (METHOD 5004)
GROUP A TEST REQUIREMENTS (METHOD 5005)
GROUP B AND D FOR CLASS S ENDPOINT ELECTRICAL
PARAMETERS (METHOD 5005)
SUBGROUP
1*, 2, 3, 4, 5 6
1, 2, 3, 4, 5, 6
1, 2, 3
*PDA APPLIES TO SUBGROUP 1.
PDA TEST NOTE: The PDA is specified as 5% based on failures from Group A, Subgroup 1, tests after cooldown as the final
electrical test in accordance with method 5004 of MIL-STD-883. The verified failures of Group A, Subgroup 1 and delta rejects
after burn-in divided by the total number of devices submitted for burn-in that lot shall be used to determine the percent for the lot.
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LINEAR TECHNOLOGY CORPORATION
PAGE 21 of 21