Product Overview MBR140SF: Schottky Power Rectifier, Surface Mount, 1.0 A, 40 V For complete documentation, see the data sheet Product Description The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier's state-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. It is ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes and polarity protection diodes. Features • • • • • • • • • Guardring for Stress Protection Low Forward Voltage 125 C Operating Junction Temperature Epoxy Meets UL94, VO at 1/8 inch Package Designed for Optimal Automated Assembly ESD Ratings: Machine Model = C, Human Body Model = 3B All Packages are Pb-Free AEC-Q101 Qualified and PPAP Capable NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements Part Electrical Specifications Product Compliance Status Configurat ion VRRM Min (V) VF Max (V) IRM Max (µA) IO(rec) Max (A) IFSM Max (A) trr Max (ns) Cj Max (pF) Package Type MBR140SFT1G AEC Qualified Active Single 40 0.55 500 1 30 - - SOD123-2 Active Single 40 0.55 500 1 30 - - SOD123-2 Active Single 40 0.55 500 1 30 - - SOD123-2 Active Single 40 0.55 500 1 30 - - SOD123-2 Pb-free Halide free MBR140SFT3G AEC Qualified Pb-free Halide free NRVB140SFT1G AEC Qualified PPAP Capable Pb-free Halide free NRVB140SFT3G AEC Qualified PPAP Capable Pb-free Halide free For more information please contact your local sales support at www.onsemi.com Created on: 6/30/2016