Product Overview

Product Overview
MBR160: Schottky Barrier Rectifier, 60 V, 1.0 A
For complete documentation, see the data sheet
Product Description
The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier?s
state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact. It is ideally suited for use
as rectifiers in low voltage, high frequency inverters, free wheeling diodes and polarity protection diodes.
Features
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Low Reverse Current
Low Stored Charge, Majority Carrier Conduction
Low Power Loss/High Efficiency
Highly Stable Oxide Passivated Junction
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Mechanical Characteristics:
Case: Epoxy, Molded
Weight: 0.4 gram (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
Lead Surface Temperature for Soldering Purposes: 260 °C Max. for 10 Seconds
Shipped in plastic bags, 1000 per bag
Available Tape and Reeled, 5000 per reel, by adding a "RL'' suffix to the part number
For more features, see the data sheet
Part Electrical Specifications
Product
Compliance
Status
Configurat
ion
VRRM Min
(V)
VF Max
(V)
IRM Max
(µA)
IO(rec) Max
(A)
IFSM Max
(A)
MBR160G
Pb-free
Active
Single
60
0.75
500
1
25
Axial
Lead-2
Active
Single
60
0.75
500
1
25
Axial
Lead-2
Halide free
MBR160RLG
Pb-free
Halide free
For more information please contact your local sales support at www.onsemi.com
Created on: 6/30/2016
trr Max
(ns)
Cj Max
(pF)
Package
Type