Product Overview

Product Overview
1N5817: 20 V, 1.0 A Schottky Rectifier
For complete documentation, see the data sheet
Product Description
The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier?s
state-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. It is
ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes and polarity protection diodes.
Features
• Extremely Low vF
• Low Stored Charge, Majority Carrier Conduction
• Low Power Loss/High Efficiency Mechanical Characteristics
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Mechanical Characteristics:
Case: Epoxy, Molded
Weight: 0.4 gram (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
Shipped in plastic bags, 1000 per bag.
Available Tape and Reeled, 5000 per reel, by adding a "RL" suffix to the part number
Polarity: Cathode Indicated by Polarity Band
Marking: 1N5817, 1N5818, 1N5819
For more features, see the data sheet
Part Electrical Specifications
Product
Compliance
Status
Configurat
ion
VRRM Min
(V)
VF Max
(V)
IRM Max
(µA)
IO(rec) Max
(A)
IFSM Max
(A)
1N5817G
Pb-free
Active
Single
20
0.45
1000
1
25
Axial
Lead-2
Active
Single
20
0.45
1000
1
25
Axial
Lead-2
Halide free
1N5817RLG
Pb-free
Halide free
For more information please contact your local sales support at www.onsemi.com
Created on: 6/30/2016
trr Max
(ns)
Cj Max
(pF)
Package
Type