IRF IRHNJ58Z30

PD - 93751B
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-0.5)
IRHNJ57Z30
30V, N-CHANNEL
4#
TECHNOLOGY
c
Product Summary
Part Number Radiation Level
IRHNJ57Z30 100K Rads (Si)
RDS(on)
0.020Ω
ID
22A*
IRHNJ53Z30
300K Rads (Si)
0.020Ω
22A*
IRHNJ54Z30
600K Rads (Si)
0.020Ω
22A*
0.025Ω
22A*
IRHNJ58Z30 1000K Rads (Si)
International Rectifier’s R5 TM technology provides
high performance power MOSFETs for space applications. These devices have been characterized for
Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
SMD-0.5
Features:
n
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Ultra Low RDS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Ceramic Package
Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
Units
22*
22*
88
75
0.6
±20
155
22
7.5
1.7
-55 to 150
A
W
W/°C
V
mJ
A
mJ
V/ns
o
C
300 (for 5s)
1.0 (Typical)
g
* Current is limited by internal wire diameter
For footnotes refer to the last page
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1
07/30/02
IRHNJ57Z30
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Min
Drain-to-Source Breakdown Voltage
∆BVDSS/∆TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
g fs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Typ Max Units
30
—
—
V
—
0.028
—
V/°C
—
—
0.02
Ω
2.0
16
—
—
—
—
—
—
4.0
—
10
25
V
S( )
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
VGS = 12V, ID = 22A
➃
VDS = VGS, ID = 1.0mA
VDS > 15V, IDS = 22A ➃
VDS= 24V ,VGS=0V
VDS = 24V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, ID = 22A
VDS = 15V
Ω
Parameter
BVDSS
µA
IGSS
IGSS
Qg
Q gs
Q gd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.0
100
-100
65
20
10
25
100
35
30
—
Ciss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
2054
936
33
—
—
—
nA
nC
VDD = 15V, ID = 22A,
VGS =12V, RG = 7.5Ω
ns
nH
Measured from the center of
drain pad to center of source pad
VGS = 0V, VDS = 25V
f = 1.0MHz
pF
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS
ISM
VSD
trr
Q RR
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ton
Forward Turn-On Time
—
—
—
—
—
—
—
—
—
—
22*
88
1.2
102
193
Test Conditions
A
V
ns
nC
Tj = 25°C, IS = 22A, VGS = 0V ➃
Tj = 25°C, IF = 22A, di/dt ≤ 100A/µs
VDD ≤ 25V ➃
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
* Current is limited by internal wire diameter
Thermal Resistance
Parameter
RthJC
RthJ-PCB
Junction-to-Case
Junction-to-PC board
Min Typ Max
—
—
—
6.9
1.67
—
Units
°C/W
Test Conditions
soldered to a 2” square copper-clad board
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
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Radiation Characteristics
Pre-Irradiation
IRHNJ57Z30
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅
Parameter
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)
RDS(on)
VSD
Test Conditions
Up to 600K Rads(Si)1 1000K Rads (Si)2 Units
Min
Max
Min
Max
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source ➃
On-State Resistance (TO-3)
Static Drain-to-Source ➃
On-State Resistance (SMD-.5)
Diode Forward Voltage ➃
30
2.0
—
—
—
—
—
4.0
100
-100
10
0.024
30
1.5
—
—
—
—
—
4.0
100
-100
25
0.03
µA
Ω
—
0.02
—
0.025
Ω
VGS = 12V, ID =22A
—
1.2
—
1.2
V
VGS = 0V, IS = 22A
V
nA
VGS = 0V, ID = 1.0mA
VGS = VDS, ID = 1.0mA
VGS = 20V
VGS = -20 V
VDS= 24V, VGS =0V
VGS = 12V, ID =22A
1. Part numbers IRHNJ57Z30, IRHNJ53Z30 and IRHNJ54Z30
2. Part number IRHNJ58Z30
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
Br
I
Au
LET
MeV/(mg/cm2))
37.9
59.4
80.3
VDS (V)
Range
(µm) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V
33.5
30
30
30
25
20
28.5
25
25
20
15
10
26.4
22.5
22.5
15
10
—
Energy
(MeV)
255
290
313
35
30
VDS
25
Br
I
AU
20
15
10
5
0
0
-5
-10
-15
-20
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHNJ57Z30
Pre-Irradiation
100
100
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
10
5.0V
20µs PULSE WIDTH
T = 25 C
1
5.0V
10
10
100
TJ = 150 ° C
10
25V
15
V DS = 15V
20µs PULSE WIDTH
8.0
9.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
R DS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
2.0
7.0
10
100
Fig 2. Typical Output Characteristics
TJ = 25 ° C
6.0
1
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1
5.0
°
J
1
0.1
VDS , Drain-to-Source Voltage (V)
100
20µs PULSE WIDTH
T = 150 C
°
J
1
0.1
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
TOP
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
ID = 22A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 12V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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Pre-Irradiation
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
3200
Coss
2400
Ciss
1600
800
20
VGS, Gate-to-Source Voltage (V)
4000
C, Capacitance (pF)
IRHNJ57Z30
ID = 22A
VDS = 24V
VDS = 15V
VDS = 6V
15
10
5
FOR TEST CIRCUIT
SEE FIGURE 13
C
rss
0
0
1
10
100
0
10
VDS , Drain-to-Source Voltage (V)
30
40
50
60
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
ID , Drain-to-Source Current (A)
100
ISD , Reverse Drain Current (A)
20
QG , Total Gate Charge (nC)
TJ = 150 ° C
100
TJ = 25 ° C
10
V GS = 0 V
1
0.4
0.8
1.2
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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OPERATION IN THIS AREA LIMITED
BY RDS(on)
1.6
100µs
10
1ms
10ms
Tc = 25°C
Tj = 150°C
Single Pulse
1
1
10
100
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
5
IRHNJ57Z30
Pre-Irradiation
50
RD
VDS
LIMITED BY PACKAGE
VGS
I D , Drain Current (A)
40
D.U.T.
RG
+
-VDD
VGS
30
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
20
Fig 10a. Switching Time Test Circuit
VDS
10
90%
0
25
50
75
100
TC , Case Temperature
125
150
( °C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
1
D = 0.50
0.20
0.10
P DM
0.05
0.1
0.02
0.01
0.01
0.00001
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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Pre-Irradiation
IRHNJ57Z30
1 5V
L
VDS
D .U .T.
RG
IA S
2V
0V
GS
D R IV E R
+
- VD D
0 .0 1 Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
A
EAS , Single Pulse Avalanche Energy (mJ)
320
TOP
BOTTOM
240
160
80
0
25
V (B R )D SS
ID
9.8A
14A
22A
50
75
100
125
150
Starting TJ , Junction Temperature ( °C)
tp
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
QG
12V
.2µF
.3µF
12 V
QGS
QGD
+
V
- DS
VGS
VG
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
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D.U.T.
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
7
IRHNJ57Z30
Pre-Irradiation
Footnotes:
➀ Repetitive Rating; Pulse width limited by
maximum junction temperature.
➁ VDD = 15V, starting TJ = 25°C, L= 0.64 mH
Peak IL = 22A, VGS = 12V
➂ ISD ≤ 22A, di/dt ≤ 54A/µs,
VDD ≤ 30V, TJ ≤ 150°C
➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
➄ Total Dose Irradiation with VGS Bias.
12 volt VGS applied and V DS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
➅ Total Dose Irradiation with VDS Bias.
24 volt VDS applied and V GS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions — SMD-0.5
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TAC Fax: (310) 252-7903
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Data and specifications subject to change without notice. 07/02
8
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