ETC IRHY57034CM

PD - 93825A
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-257AA)
IRHY57034CM
60V, N-CHANNEL
4#
TECHNOLOGY
c
Product Summary
Part Number Radiation Level RDS(on)
IRHY57034CM 100K Rads (Si)
0.04Ω
IRHY53034CM 300K Rads (Si)
0.04Ω
ID
18A*
18A*
IRHY54034CM 600K Rads (Si)
0.04Ω
18A*
IRHY58034CM 1000K Rads (Si)
0.048Ω
18A*
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space applications. These devices have been characterized for
Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
TO-257AA
Features:
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Ultra Low RDS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
18*
18*
72
75
0.6
±20
110
18
7.5
10
-55 to 150
A
W
W/°C
V
mJ
A
mJ
V/ns
o
300 (0.063in./1.6mm from case for 10sec)
4.3 (Typical)
C
g
* Current is limited by internal wire diameter
For footnotes refer to the last page
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1
4/17/01
IRHY57034CM
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Min
Typ Max Units
Test Conditions
60
—
—
V
VGS = 0V, ID = 1.0mA
—
0.057
—
V/°C
Reference to 25°C, ID = 1.0mA
—
—
0.04
Ω
2.0
16
—
—
—
—
—
—
4.0
—
10
25
V
S( )
VGS = 12V, ID = 18A ➃
VDS = VGS, ID = 1.0mA
VDS > 15V, IDS = 18A ➃
VDS=48V ,VGS=0V
VDS = 48V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, ID = 18A
VDS = 30V
Ω
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
∆BV DSS/∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
µA
IGSS
IGSS
Qg
Q gs
Q gd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
100
-100
45
10
15
25
100
35
30
—
Ciss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
1152
535
42
—
—
—
nA
nC
VDD = 30V, ID = 18A,
VGS =12V, RG = 7.5Ω
ns
nH
Measured from drain lead (6mm/
0.25in. from package) to source
lead (6mm/0.25in. from package)
VGS = 0V, VDS = 25V
f = 1.0MHz
pF
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
—
—
—
—
—
—
—
—
—
—
18*
72
1.2
99
322
Test Conditions
IS
ISM
VSD
t rr
Q RR
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ton
Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
V
ns
nC
Tj = 25°C, IS = 18A, VGS = 0V ➃
Tj = 25°C, IF = 18A, di/dt ≥ 100A/µs
VDD ≤ 25V ➃
* Current is limited by internal wire diameter
Thermal Resistance
Parameter
RthJC
RthJA
Junction-to-Case
Junction-to-Ambient
Min Typ Max Units
—
—
—
—
1.67
80
Test Conditions
°C/W
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
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Radiation Characteristics
IRHY57034CM
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅
Parameter
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)
RDS(on)
VSD
Up to 600K Rads(Si)1 1000K Rads (Si)2 Units
Min
Max
Min
Max
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source ➃
On-State Resistance (TO-3)
Static Drain-to-Source ➃
On-State Resistance (TO-257AA)
Diode Forward Voltage ➃
Test Conditions
60
2.0
—
—
—
—
—
4.0
100
-100
10
0.044
60
1.5
—
—
—
—
—
4.0
100
-100
10
0.053
nA
—
0.04
—
0.048
Ω
VGS = 12V, ID = 18A
—
1.2
1.2
V
VGS = 0V, IS = 18A
—
V
µA
Ω
VGS = 0V, ID = 1.0mA
VGS = VDS, ID = 1.0mA
VGS = 20V
VGS = -20 V
VDS=48V, VGS =0V
VGS = 12V, ID = 18A
1. Part numbers IRHY57034CM, IRHY53034CM and IRHY54034CM
2. Part number IRHY58034CM
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
Energy
(MeV)
300
300
2068
VDS
Kr
Xe
Au
LET
MeV/(mg/cm2))
39.2
63.3
86.6
VDS (V)
Range
(µm) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V
37.4
60
60
60
52
34
29.2
46
46
35
25
15
106
35
35
27
20
14
70
60
50
40
30
20
10
0
Kr
Xe
Au
0
-5
-10
-15
-20
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHY57034CM
1000
Pre-Irradiation
1000
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
100
100
10
5.0V
1
20µs PULSE WIDTH
T = 25 C
1
10
5.0V
10
100
TJ = 25 ° C
100
TJ = 150 ° C
10
15
V DS = 25V
20µs PULSE WIDTH
11
13
15
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
R DS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
2.5
9
10
100
Fig 2. Typical Output Characteristics
1000
7
1
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
5
°
J
1
0.1
VDS , Drain-to-Source Voltage (V)
1
20µs PULSE WIDTH
T = 150 C
°
J
0.1
0.1
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
TOP
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
22A
ID = 18A
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 12V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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Pre-Irradiation
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
2000
1500
Ciss
1000
Coss
500
20
VGS , Gate-to-Source Voltage (V)
2500
C, Capacitance (pF)
IRHY57034CM
ID = 18A
22A
VDS = 48V
VDS = 30V
VDS = 12V
15
10
5
FOR TEST CIRCUIT
SEE FIGURE 13
C
rss
0
0
1
10
0
100
20
1000
100
DS(on)
I D , Drain Current (A)
100
10
TJ = 25 ° C
1
V GS = 0 V
0.6
0.8
1.0
1.2
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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40
OPERATION IN THIS AREA LIMITED
BY R
TJ = 150 ° C
0.1
0.4
30
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
ISD , Reverse Drain Current (A)
10
QG , Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
1.4
10us
100us
10
1
1ms
TC = 25 ° C
TJ = 150 ° C
Single Pulse
1
10ms
10
100
1000
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
5
IRHY57034CM
Pre-Irradiation
35
LIMITED BY PACKAGE
VGS
30
I D , Drain Current (A)
RD
VDS
D.U.T.
RG
+
-VDD
25
VGS
20
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
15
Fig 10a. Switching Time Test Circuit
10
VDS
5
90%
0
25
50
75
100
125
150
TC , Case Temperature ( ° C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
1
D = 0.50
0.20
0.10
P DM
0.05
0.1
0.02
0.01
0.01
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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Pre-Irradiation
IRHY57034CM
1 5V
L
VD S
D .U .T.
RG
IA S
VGS
20V
D R IV E R
+
- VD D
0 .0 1 Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
A
EAS , Single Pulse Avalanche Energy (mJ)
200
ID
8.0A
11.4A
BOTTOM 18A
TOP
150
100
50
0
25
50
75
100
125
150
Starting TJ , Junction Temperature ( ° C)
V (B R )D S S
tp
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
QG
12V
.2µF
.3µF
12 V
QGS
QGD
+
V
- DS
VGS
VG
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
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D.U.T.
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
7
IRHY57034CM
Pre-Irradiation
Footnotes:
➀ Repetitive Rating; Pulse width limited by
maximum junction temperature.
➁ VDD = 50V, starting TJ = 25°C, L= 0.7 mH
Peak IL =18A, VGS =12V
➂ ISD ≤ 18A, di/dt ≤ 234A/µs,
VDD ≤ 60V, TJ ≤ 150°C
➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
➄ Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
➅ Total Dose Irradiation with VDS Bias.
48 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions — TO-257AA
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
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Data and specifications subject to change without notice. 04/01
8
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