Product Overview

Product Overview
NGTG35N65FL2: IGBT 650V 35A FS2 Solar/UPS
For complete documentation, see the data sheet
Product Description
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop II Trench construction, and provides superior
performance in demanding switching applications, offering both low
on state voltage and minimal switching loss. The IGBT is well suited
for UPS and solar applications. Incorporated into the device is a soft
and fast co-packaged free wheeling diode with a low forward voltage.
Features
•
•
•
•
Extremely Efficient Trench with Field Stop Technology
TJmax = 175°C
Optimized for High Speed Switching
5µs Short-Circuit Capability
Applications
• Solar Inverters
• Uninterruptible Power Supplies (UPS)
Part Electrical Specifications
Product
Compliance
Status
V(BR)C IC
ES
Max
Typ
(A)
(V)
VCE(sa VF
Typ
t) Typ
(V)
(V)
Eoff
Typ
(mJ)
Eon
Typ
(mJ)
Trr
Typ
(ns)
Irr
Typ
(A)
Gate
Char
ge
Typ
(nC)
Short EAS
Circui Typ
t
(mJ)
Withs
tand
(µs)
PD
Max
(W)
CoPack
Pack age
aged Type
Diode
NGTG35N65FL2WG
Pb-free
Active
650
1.7
0.28
0.84
68
7
125
5
300
No
35
2.2
Halide free
For more information please contact your local sales support at www.onsemi.com
Created on: 6/30/2016
TO247