Product Overview

Product Overview
NGTG50N60FLWG: IGBT, PFC, High Frequency, 50 A, 600 V
For complete documentation, see the data sheet
Product Description
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior
performance in demanding switching applications, offering both low on state voltage and minimal switching loss.
Features
Benefits
• Low Saturation Voltage using Trench with Field Stop
Technology
• Low Switching Loss Reduces System Power Dissipation
• Optimized for High Speed Switching
• 5µs Short Circuit Capability
• Reduces System Power Dissipation
Applications
• Solar Inverters
• Uninterruptible Power Supplies(UPS)
Part Electrical Specifications
Product
Compliance
Status
V(BR)C IC
ES
Max
Typ
(A)
(V)
VCE(sa VF
Typ
t) Typ
(V)
(V)
Eoff
Typ
(mJ)
Eon
Typ
(mJ)
NGTG50N60FLWG
Pb-free
Active
600
1.65
0.6
1.1
50
Trr
Typ
(ns)
Halide free
For more information please contact your local sales support at www.onsemi.com
Created on: 6/30/2016
Irr
Typ
(A)
Gate
Char
ge
Typ
(nC)
Short EAS
Circui Typ
t
(mJ)
Withs
tand
(µs)
PD
Max
(W)
CoPack
Pack age
aged Type
Diode
310
5
223
No
TO247-3