NGTB40N60IHLW D

NGTB40N60IHLWG
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, and provides
superior performance in demanding switching applications, offering
both low on state voltage and minimal switching loss. The IGBT is
well suited for half bridge resonant applications. Incorporated into the
device is a soft and fast co−packaged free wheeling diode with a low
forward voltage.
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40 A, 600 V
VCEsat = 2.0 V
Eoff = 0.4 mJ
Features
•
•
•
•
•
Low Saturation Voltage using Trench with Fieldstop Technology
Low Switching Loss Reduces System Power Dissipation
Low Gate Charge
Soft, Fast Free Wheeling Diode
These are Pb−Free Devices
C
Typical Applications
• Inductive Heating
• Soft Switching
G
E
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−emitter voltage
VCES
600
V
Collector current
@ TC = 25°C
@ TC = 100°C
IC
Pulsed collector current, Tpulse
limited by TJmax
ICM
Diode forward current
@ TC = 25°C
@ TC = 100°C
IF
Diode pulsed current, Tpulse limited
by TJmax
IFM
200
Gate−emitter voltage
VGE
$20
Power Dissipation
@ TC = 25°C
@ TC = 100°C
PD
Operating junction temperature
range
TJ
−55 to +150
°C
Storage temperature range
Tstg
−55 to +150
°C
Lead temperature for soldering, 1/8”
from case for 5 seconds
TSLD
260
°C
A
80
40
200
A
G
C
TO−247
CASE 340L
STYLE 4
E
A
80
40
A
MARKING DIAGRAM
V
W
250
50
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
40N60IHL
AYWWG
A
Y
WW
G
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
NGTB40N60IHLWG
© Semiconductor Components Industries, LLC, 2012
November, 2012 − Rev. 0
1
Package
Shipping
TO−247 30 Units / Rail
(Pb−Free)
Publication Order Number:
NGTB40N60IHLW/D
NGTB40N60IHLWG
THERMAL CHARACTERISTICS
Symbol
Value
Unit
Thermal resistance junction−to−case, for IGBT
Rating
RqJC
0.87
°C/W
Thermal resistance junction−to−case, for Diode
RqJC
1.46
°C/W
Thermal resistance junction−to−ambient
RqJA
40
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Test Conditions
Symbol
Min
Typ
Max
Unit
VGE = 0 V, IC = 500 mA
V(BR)CES
600
−
−
V
VGE = 15 V, IC = 40 A
VGE = 15 V, IC = 40 A, TJ = 150°C
VCEsat
−
−
2.0
2.6
2.4
−
V
VGE = VCE, IC = 150 mA
VGE(th)
4.5
5.5
6.5
V
Collector−emitter cut−off current, gate−
emitter short−circuited
VGE = 0 V, VCE = 600 V
VGE = 0 V, VCE = 600 V, TJ = 150°C
ICES
−
−
−
−
0.2
2
mA
Gate leakage current, collector−emitter
short−circuited
VGE = 20 V , VCE = 0 V
IGES
−
−
100
nA
Cies
−
3100
−
pF
Coes
−
120
−
Cres
−
80
−
Parameter
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
Collector−emitter saturation voltage
Gate−emitter threshold voltage
DYNAMIC CHARACTERISTIC
Input capacitance
Output capacitance
VCE = 20 V, VGE = 0 V, f = 1 MHz
Reverse transfer capacitance
Gate charge total
Gate to emitter charge
VCE = 480 V, IC = 40 A, VGE = 15 V
Gate to collector charge
nC
Qg
130
Qge
29
Qgc
67
td(on)
70
tr
40
td(off)
140
tf
70
Eoff
0.4
mJ
td(on)
70
ns
tr
40
td(off)
140
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−on delay time
Rise time
Turn−off delay time
Fall time
TJ = 25°C
VCC = 400 V, IC = 40 A
Rg = 10 W
VGE = 0 V/ 15V
Turn−off switching loss
Turn−on delay time
Rise time
Turn−off delay time
Fall time
TJ = 150°C
VCC = 400 V, IC = 40 A
Rg = 10 W
VGE = 0 V/ 15V
ns
tf
90
Eoff
0.8
VGE = 0 V, IF = 40 A
VGE = 0 V, IF = 40 A, TJ = 150°C
VF
1.3
1.35
TJ = 25°C
IF = 40 A, VR = 200 V
diF/dt = 200 A/ms
trr
400
ns
Qrr
5500
nc
Irrm
25
A
Turn−off switching loss
mJ
DIODE CHARACTERISTIC
Forward voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
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2
1.5
V
NGTB40N60IHLWG
TYPICAL CHARACTERISTICS
140
TJ = 25°C
VGE = 17 V to 15 V
120
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
140
13 V
100
80
60
11 V
40
10 V
20
0
9V
7 V to 8 V
0
1
2
3
4
5
6
7
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VGE = 17 V
to 13 V
100
80
60
11 V
10 V
40
9V
20
0
8
TJ = 150°C
120
8V
7V
0
1
2
3
4
5
6
7
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 1. Output Characteristics
TJ = −55°C
140
Figure 2. Output Characteristics
140
VGE = 17 V
to 13 V
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
160
120
100
80
60
11 V
40
10 V
20
0
9V
7 V to 8 V
1
2
3
4
5
6
7
VCE, COLLECTOR−EMITTER VOLTAGE (V)
0
120
100
TJ = 25°C
80
TJ = 150°C
60
40
20
0
8
0
Figure 3. Output Characteristics
16
10000
4.00
Cies
IC = 80 A
3.50
CAPACITANCE (pF)
VCE, COLLECTOR−EMITTER
VOLTAGE (V)
4
8
12
VGE, GATE−EMITTER VOLTAGE (V)
Figure 4. Typical Transfer Characteristics
4.50
3.00
IC = 40 A
2.50
2.00
IC = 20 A
1.50
IC = 5 A
1.00
1000
100
Coes
Cres
0.50
0
−75
8
−25
25
75
125
175
10
0
10
20
30
40
50
60
70
80
TJ, JUNCTION TEMPERATURE (°C)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 5. VCE(sat) vs. TJ
Figure 6. Typical Capacitance
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3
90 100
NGTB40N60IHLWG
TYPICAL CHARACTERISTICS
20
100
VGE, GATE−EMITTER VOLTAGE (V)
IF, FORWARD CURRENT (A)
120
TJ = 25°C
80
TJ = 150°C
60
40
20
0
0
0.5
1
1.5
2
15
10
5
0
2.5
VCE = 480 V
20
0
VF, FORWARD VOLTAGE (V)
SWITCHING TIME (ns)
0.6
0.4
td(off)
100
tf
td(on)
tr
10
VCE = 400 V
VGE = 15 V
IC = 40 A
Rg = 10 W
0.2
0
0
2.5
20
40
60
80
100
120
140
40
60
80
100
120
140
Figure 9. Switching Loss vs. Temperature
Figure 10. Switching Time vs. Temperature
0.5
16
160
1000
1
4
20
TJ, JUNCTION TEMPERATURE (°C)
1.5
0
0
TJ, JUNCTION TEMPERATURE (°C)
VCE = 400 V
VGE = 15 V
TJ = 150°C
Rg = 10 W
2
1
160
SWITCHING TIME (ns)
Eoff, TURN−OFF SWITCHING LOSS (mJ)
Eoff, TURN−OFF SWITCHING LOSS (mJ)
0.8
140
1000
VCE = 400 V
VGE = 15 V
IC = 40 A
Rg = 10 W
1
120
Figure 8. Typical Gate Charge
Figure 7. Diode Forward Characteristics
1.2
40
60
80
100
QG, GATE CHARGE (nC)
28
40
52
64
76
tf
100
td(on)
tr
10
1
88
td(off)
VCE = 400 V
VGE = 15 V
TJ = 150°C
Rg = 10 W
4
IC, COLLECTOR CURRENT (A)
20
32
44
56
68
IC, COLLECTOR CURRENT (A)
Figure 11. Switching Loss vs. IC
Figure 12. Switching Time vs. Temperature
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4
80
NGTB40N60IHLWG
1.6
1000
VCE = 400 V
VGE = 15 V
IC = 40 A
TJ = 150°C
1.4
1.2
SWITCHING TIME (ns)
Eoff, TURN−OFF SWITCHING LOSS (mJ)
TYPICAL CHARACTERISTICS
1
0.8
0.6
0.4
td(off)
tf
100
td(on)
tr
10
VCE = 400 V
VGE = 15 V
IC = 40 A
TJ = 150°C
0.2
0
15
5
25
35
45
55
65
75
1
85
25
35
45
55
65
75
Figure 13. Switching Loss vs. RG
Figure 14. Switching Time vs. RG
85
1000
SWITCHING TIME (ns)
1.2
1
0.8
0.6
0.4
VGE = 15 V
IC = 40 A
RG = 10 W
TJ = 150°C
0.2
0
175
225
275
325
375
425
475
td(off)
tf
100
td(on)
tr
10
1
175
525 575
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 15. Switching Loss vs. VCE
225
275 325
375
425 475
525 575
VCE, COLLECTOR−EMITTER VOLTAGE (V)
50 ms
10
dc operation
1
IC, COLLECTOR CURRENT (A)
1000
100
100 ms
1 ms
Single Nonrepetitive
Pulse TC = 25°C
Curves must be derated
linearly with increase
in temperature
0.1
0.01
VGE = 15 V
IC = 40 A
RG = 10 W
TJ = 150°C
Figure 16. Switching Time vs. VCE
1000
IC, COLLECTOR CURRENT (A)
15
RG, GATE RESISTOR (W)
1.4
Eoff, TURN−OFF SWITCHING LOSS
(mJ)
5
RG, GATE RESISTOR (W)
1
10
100
VCE, COLLECTOR−EMITTER VOLTAGE (V)
1000
100
10
1
VGE = 15 V, TC = 125°C
1
10
100
1000
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 18. Reverse Bias Safe Operating Area
Figure 17. Safe Operating Area
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5
NGTB40N60IHLWG
TYPICAL CHARACTERISTICS
1
50% Duty Cycle
RqJC = 0.87
20%
R(t) (°C/W)
0.1
10%
5%
Junction R1
2%
0.01
R2
Rn
C2
Cn
Ri (°C/W)
Case
Ci = ti/Ri
1%
C1
Single Pulse
0.001
0.000001
0.00001
ti (sec)
0.04077
0.09054
0.16141
0.21558
0.24842
1.0E−4
5.48E−5
0.002
0.03
0.1
0.11759
2.0
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 19. IGBT Transient Thermal Impedance
10
RqJC = 1.46
R(t) (°C/W)
1
0.1
50% Duty Cycle
20%
10%
5%
Junction R1
2%
0.01
Rn
C2
Cn
Ci = ti/Ri
1%
C1
0.00001
Case
Ri (°C/W)
0.18019
0.37276
0.45472
0.33236
0.11759
ti (sec)
1.48E−4
0.002
0.03
0.1
2.0
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
Single Pulse
0.001
0.000001
R2
0.0001
0.001
0.01
0.1
1
PULSE TIME (sec)
Figure 20. Diode Transient Thermal Impedance
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6
10
100
1000
NGTB40N60IHLWG
Figure 21. Test Circuit for Switching Characteristics
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7
NGTB40N60IHLWG
Figure 22. Definition of Turn On Waveform
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8
NGTB40N60IHLWG
Figure 23. Definition of Turn Off Waveform
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9
NGTB40N60IHLWG
PACKAGE DIMENSIONS
TO−247
CASE 340L−02
ISSUE F
−T−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
C
−B−
E
U
N
L
4
A
−Q−
1
2
0.63 (0.025)
3
M
T B
M
P
−Y−
K
F 2 PL
W
J
D 3 PL
0.25 (0.010)
M
Y Q
MILLIMETERS
MIN
MAX
20.32
21.08
15.75
16.26
4.70
5.30
1.00
1.40
1.90
2.60
1.65
2.13
5.45 BSC
1.50
2.49
0.40
0.80
19.81
20.83
5.40
6.20
4.32
5.49
--4.50
3.55
3.65
6.15 BSC
2.87
3.12
STYLE 4:
PIN 1.
2.
3.
4.
H
G
DIM
A
B
C
D
E
F
G
H
J
K
L
N
P
Q
U
W
INCHES
MIN
MAX
0.800
8.30
0.620
0.640
0.185
0.209
0.040
0.055
0.075
0.102
0.065
0.084
0.215 BSC
0.059
0.098
0.016
0.031
0.780
0.820
0.212
0.244
0.170
0.216
--0.177
0.140
0.144
0.242 BSC
0.113
0.123
GATE
COLLECTOR
EMITTER
COLLECTOR
S
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NGTB40N60IHLW/D