INFINEON STM51005A

1300 nm Laser in Receptacle Package,
Medium Power
STM 51004X
STM 51005X
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Designed for application in fiber-optic networks
Laser Diode with Multi-Quantum Well structure
Suitable for bit rates up to 1 Gbit/s
Ternary photodiode at rear mirror for monitoring
and control of radiant power
• Hermetically sealed subcomponent, similar to TO 18
• SM Pigtail with optional flange
Type
Ordering Code
Connector/Flange
STM 51004G
Q62702-P3001
FC / without flange
STM 51004A
Q62702-P3050
DIN / without flange
STM 51005G
Q62702-P3061
FC / with flange
STM 51005A
Q62702-P3056
DIN / with flange
Maximum Ratings
Output power ratings refer to the SM fiber output. The operating temperature of the
submount is identical to the case temperature.
Parameter
Symbol
Values
Unit
Module
Operating temperature range at case
TC
− 40 … + 85
°C
Storage temperature range
Tstg
− 40 … + 85
°C
Soldering temperature
tmax = 10 s, 2 mm distance from bottom edge of
case
TS
260
°C
Direct forward current
IF max
120
mA
Radiant power CW
Φe
2
mW
Reverse voltage
VR max
2
V
Laserdiode
Semiconductor Group
1
02.95
STM 51004X
STM 51005X
Maximum Ratings (cont’d)
Parameter
Symbol
Values
Unit
Monitor Diode
VR max
Reverse voltage
10
V
Characteristics
All optical data refer to a coupled 10/125 µm SM fiber, TC = 25 °C.
Parameter
Symbol
Values
Unit
> 1.2
mW
1280 … 1330
nm
Laser Diode
Optical output power
Φe
Emission wavelength center of range
Φe = 0.5 mW
λ
Spectral bandwidth Φe = 0.5 mW (RMS)
∆λ
<5
nm
Threshold current (− 40 … + 85 °C)
Ith
2 … 45
mA
Forward voltage Φe = 0.5 mW
VF
< 1.5
V
Radiant power at threshold
Φeth
< 40
µW
Slope efficiency
η
20 … 100
Differential series resistance
rS
<8
Ω
Rise time/Fall time
tR, tF
<1
ns
mW/A
Monitor Diode
Dark current, VR = 5 V, Φe = 0
IR
< 500
nA
Photo current, Φe = 0.5 mW
IP
100 … 1000
µA
Semiconductor Group
2
STM 51004X
STM 51004X
Laser Diode
Radiant Power in Singlemode Fiber
Relative Radiant Power
Φe = f(λ)
1.2
100
90
Relative Optical Power
Optical Power in mW
1
0.8
0.6
0.4
0.2
80
70
60
50
40
30
20
10
0
0
0
10
20
1306 1308 1310 1312 1314
30
Wavelength in nm
Forward Current in mA
Monitor Diode Dark Current IR = f(TA)
Φport = 0, VR = 5 V
Laser Forward Current
IF = f(VF)
1000
100
100
80
Dark Current in nA
Forward Current in mA
90
70
60
50
40
30
10
1
0.1
20
10
0.01
0
0
0.4
0.8
1.2
-50
1.6
50
Temperature in °C
Forward Voltage in V
Semiconductor Group
0
3
100
STM 51004X
STM 51005X
Package Outlines (Dimensions in mm)
STM 51004X
STM 51005X (with flange)
Semiconductor Group
4