HV7361 DATA SHEET (04/05/2012) DOWNLOAD

Supertex inc.
HV7361
High Speed, ±100V 2.5A,
Ultrasound RTZ Pulser with T/R Switch
Features
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General Description
HVCMOS technology for high performance
High density integration AC coupled pulser
0 to ±100V output voltage
±2.5A source and sink minimum pulse current
Up to 35MHz operating frequency
2.0ns matched delay times
2.5, 3.3 or 5.0V CMOS logic interface
Built-in two terminal, low noise T/R switch
Low power consumption and very simple to use
The Supertex HV7361 is a high voltage, high-speed, pulse
generator with built-in, fast return to zero damping FETs,
and an integrated, two terminal, low noise T/R switch. This
high voltage and high-speed integrated circuit is designed for
portable medical ultrasound image devices, but can also can
be used for NDT and test equipment applications.
®
The HV7361 consists of a controller logic interface circuit,
level translators, AC coupled MOSFET gate drivers and high
voltage and high current P-channel and N-channel MOSFETs
as the output stage.
Application
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The peak output currents of each channel are guaranteed
to be over ±2.5A with up to ±100V of pulse swing. The AC
coupling topology for the gate drivers not only saves two
floating voltage supplies, it also makes the PCB layout easier.
Medical ultrasound imaging
Piezoelectric transducer drivers
NDT ultrasound transmission
Pulse waveform generator
Typical RTZ Application Circuit
+10V
+10V
0 to +100V
VDD
+2.5/3.3V VLL
SP1
VL3
VH
PE
DP1
DN1
INA
2.5/3.3V
Logic Input
INB
SN1
INC
SP2
IND
DP2
0 to -100V
DN2
SN2
GND VSS VL1
VL2
RX
T/R SW
XDCR
to Rx LNA
Supertex inc.
● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com
HV7361
Ordering Information
Part Number
Package Option
Packing
HV7361LA-G
22-Lead LFGA
364/Tray
-G indicates package is RoHS compliant (‘Green’)
Absolute Maximum Ratings
Parameter
Value
Pad Configuration
VDD – VSS Logic supply voltage
-0.5 to +12.5V
VH Output high supply voltage
VL -0.5 to VDD +0.5V
8
VSS -0.5V to VH +0.5V
7
VL Output low supply voltage
VSS Low side supply voltage
-6.0 to +0.5V
(VSPx - VSNx) Differential high voltage
+220V
VSPx Positive high voltage
-0.5 to +110V
VSNx Negative high voltage
+0.5 to -110V
VSS -0.5V to GND +5.5V
All logic input voltages
Rx to XDCR differential drop
±140V
Coupling capacitor breakdown voltage
±110V
Maximum junction temperature
125°C
Operating temperature
-20 to +85°C
9
6
5
4
3
2
1
A
Package
θja
22-Lead LFGA
106OC/W
Power-Up Sequence
C
D
E
F
G
H
J
K
L
M
N
P
22-Lead LFGA (LA)
(top view)
Package Marking
Absolute Maximum Ratings are those values beyond which damage to the device may
occur. Functional operation under these conditions is not implied. Continuous operation
of the device at the absolute rating level may affect device reliability. All voltages are
referenced to device ground.
Typical Thermal Resistance
B
HV7361
LLLLLL
YYWW
AAACCC
L = Lot Number
YY = Year Sealed
WW = Week Sealed
A = Assembler ID
C = Country of Origin
= “Green” Packaging
Package may or may not include the following marks: Si or
22-Lead LFGA (LA)
Logic Control Table
Step
Description
1
VLL
2
VDD, VH, VSS, VL with signal logic low
3
VPP and VNN
4
PE active
Input Pulse
PE
Power-Down Sequence
Output MOSFETs
INA
INB
INC
IND
SP1
to
DP1
DN1
to
SN1
SP2
to
DP2
DN2
to
SN2
1
X
X
X
ON
X
X
X
X
1
X
X
X
ON
X
X
X
X
1
X
X
X
ON
X
X
X
X
1
X
X
X
ON
Step
Description
1
PE inactive
2
VPP and VNN off
0
X
X
X
OFF
X
X
X
X
X
X
OFF
X
X
VDD, VH, VSS, VL off
0
X
3
X
X
0
X
X
X
OFF
X
4
VLL off
X
X
X
0
X
X
X
OFF
X
X
X
X
OFF
OFF
OFF
OFF
Note:
Powering up/down in any arbitrary sequence will not cause any
damage to the device. The powering up/down sequence is only
recommended in order to minimize possible inrush current.
Supertex inc.
1
0
● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com
2
HV7361
Operating Supply Voltages and Current
(Operating conditions, unless otherwise specified, GND = 0V, VH = VDD = +10V, VL = VSS = 0V, VPE = 3.3V, VPP = +100V, VNN = -100V, TA = 25°C)
Sym
Parameter
Min
Typ
Max
Unit
Supply voltage
4.75
-
11.50
V
4.0 ≤ VDD ≤ 11.5V
VSS
Low side supply voltage
-5.5
-
0
V
---
VH
Output high supply voltage
VSS +4.0
-
VDD
V
VL
Output low supply voltage
VSS
-
VDD -4.0
V
VDD - VSS
IDDQ
VDD quiescent current
-
50
-
μA
IHQ
VH quiescent current
-
2.0
-
μA
IDDQ
VDD quiescent current
-
1.0
-
mA
IHQ
VH quiescent current
-
2.0
-
μA
IDD
VDD average current
-
4.0
-
mA
IH
VH average current
-
10
-
mA
VIH
Input logic voltage high
VPE -0.3
-
VPE
V
VIL
Input logic voltage low
0
-
0.3
V
IIH
Input logic current high
-
-
1.0
μA
IIL
Input logic current low
-
-
1.0
μA
VPEH
PE input logic voltage high
1.70
3.30
5.25
V
VPEL
PE input logic voltage low
0
-
0.3
V
RINPE
PE input impedance to GND
100
-
-
kΩ
Conditions
VH - VL ≥ 4.0V
No input transitions,
PE = 0
No input transitions,
PE = 1
One channel on at 5.0Mhz,
No load
For logic inputs INA, INB,
INC, and IND
For logic input PE
AC Electrical Characteristics
(Operating conditions, unless otherwise specified, GND = 0V, VH = VDD = +10V, VL = VSS = 0V, VPE = 3.3V, VPP = +100V, VNN = -100V, TA = 25°C)
Sym
Min
Typ
Max
Unit
Input or PE rise & fall time
-
-
10
ns
Logic input edge speed
requirement
td1-4
Input to output delay
-
7.5
-
ns
RLOAD = 1.0Ω
tr/f1-2
Output rise/fall time
-
9.5
-
ns
CLOAD = 330pF, RLOAD = 2.5kΩ
Δtrf
Rise and fall time matching
-
2.0
-
ΔtdC2C
Propagation matching
-
1.0
-
ns
Channel to channel
ΔtdD2D
Propagation delay matching
-
±2.0
-
ns
Device to device delay match
tPE-ON
PE ON-time
-
-
5.0
tPE –OFF
PE OFF-time
-
-
4.0
µs
VPE = 1.7 ~ 5.25V
VDD = 7.5 ~ 11.5V
-20OC ~ 85OC
COG
Output to MOSFET gate cap
-
10
-
nF
100V X7S
CVH
VH to VL3 decoupling cap
-
0.22
-
µF
16V X7R
tirf
Parameter
Supertex inc.
Conditions
● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com
3
HV7361
Pulser & Damping P-Channel MOSFET
Sym
Parameter
Min
Typ
Max
Unit
BVDSS
Drain-to-source breakdown voltage
-200
-
-
V
VGS = 0V, ID = -2.0mA
VGS(th)
Gate threshold voltage
-1.0
-
-2.4
V
VGS = VDS, ID = -1.0mA
-
-
4.5
ΔVGS(th)
Change in VGS(th) with temperature
Conditions
mV/ C VGS = VDS, ID = -1.0mA
O
RGS
Gate-to-source shunt resistor
10
-
50
kΩ
IGS = 100µA, if applied
VZGS
Gate-to-source Zener voltage
13.2
-
25
V
IGS = -2.0mA, if applied
-
-
-10
μA
IDSS
Zero gate voltage drain current
VDS = max rating, VGS = 0V
-
-
-1.0
mA
VDS = 0.8max rating,
VGS = 0V, TA = 125OC
ID(ON)
ON-state drain current
-1.2
-
-
-2.3
-2.5
-
-
-
8.5
-
-
7.0
-
-
1.0
400
-
-
RDS(ON)
ΔRDS(ON)
Static drain-to-source ON-state resistance
Change in RDS(ON) with temperature
GFS
Forward transconductance
CISS
Input capacitance
-
75
-
COSS
Common source output capacitance
-
21
-
CRSS
Reverse transfer capacitance
-
6.5
-
VSBD
Diode forward voltage drop and reverse
recovery time of body-diode
-
-
-
trrBD
A
Ω
%/OC
VGS = -5.0V, VDS = -25V
VGS = -10V, VDS = -50V
VGS = -5.0V, ID = -150mA
VGS = -10V, ID = -1.0A
VGS = -10V, ID = -1.0mA
mmho VDS = -25V, ID = -500mA
pF
VGS = 0V,
VDS = -25V,
f = 1.0MHz
1.8
V
VGS = 0V, ISD = 500mA
300
-
ns
---
Pulser & Damping N-Channel MOSFET
Sym
Parameter
Min
Typ
Max
Unit
BVDSS
Drain-to-source breakdown voltage
200
-
-
V
VGS = 0V, ID = 2.0mA
VGS(th)
Gate threshold voltage
1.0
-
2.4
V
VGS = VDS, ID = 1.0mA
-
-
-4.5
ΔVGS(th)
Change in VGS(th) with temperature
Conditions
mV/OC VGS = VDS, ID = 1.0mA
RGS
Gate-to-source shunt resistor
10
-
50
kΩ
IGS = 100µA
VZGS
Gate-to-source Zener voltage
13.2
-
25
V
IGS = 2.0mA
-
-
10
μA
VDS = max rating, VGS = 0V
-
-
1.0
mA
VDS = 0.8max rating,
VGS = 0V, TA = 125OC
1.3
-
-
2.3
2.5
-
-
-
6.5
-
-
6.0
-
-
1.0
IDSS
Zero gate voltage drain current
ID(ON)
ON-state drain current
RDS(ON)
ΔRDS(ON)
Static drain-to-source ON-state resistance
Change in RDS(ON) with temperature
GFS
Forward transconductance
400
-
-
Sym
Parameter
Min
Typ
Max
Supertex inc.
A
Ω
%/OC
VGS = 5.0V, VDS = 25V
VGS = 10V, VDS = 50V
VGS = 5.0V, ID = 150mA
VGS = 10V, ID = 1.0A
VGS = 10V, ID = 1.0A
mmho VDS = 25V, ID = 500mA
Unit
Conditions
● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com
4
HV7361
Pulser & Damping N-Channel MOSFET (cont.)
CISS
Input capacitance
-
56
-
COSS
Common source output capacitance
-
13
-
CRSS
Reverse transfer capacitance
-
2.0
-
VSBD
Diode forward voltage drop and reverse
recovery time of body-diode
-
-
-
trrBD
pF
VGS = 0V,
VDS = 25V,
f = 1.0MHz
1.8
V
VGS = 0V, ISD = 500mA
300
-
ns
---
T/R Switch Characteristics
Sym
Parameter
Min
Typ
Max
Unit
BVA-B
Breakdown voltage from XDCR to Rx
±130
-
-
V
IA-B = ±1 .0mA
RSW
Switch ON resistance from XDCR to Rx
-
15
-
Ω
IA-B = ±5.0mA
VTRIP
VA-B trip point to turn OFF
-
±1.0
±2.0
V
---
VOFF
Switch turn OFF voltage
-
±2.0
-
V
IA-B = ±1.0mA
Switch OFF current
-
±200
±300
µA
VA-B = ±130V
IPEAK
Peak switching current
-
±60
-
mA
---
TOFF
Turn OFF time
-
-
20
ns
---
TON
Turn ON time
-
-
20
ns
---
CSW(ON)
Switch ON capacitance from A to B or
B to A
-
21
-
pF
SW = ON
CSW(OFF)
Switch OFF capacitance from A to B or
B to A
-
15
-
pF
VSW = 25V
Small signal bandwidth
-
100
-
MHz
IA-B(OFF)
BW
Conditions
RLOAD = 50Ω
I-V Curve
+IPEAK
IA-B
IA-B = +200µA
-130V
-VOFF
+1.0mA
-VTRIP
+VTRIP
+1.0mA
+VOFF
VA-B
+130V
IA-B = -200µA
RSW = 15Ω
-IPEAK
Supertex inc.
● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com
5
HV7361
Pulser Timing Test
+10V
+10V
VDD
+2.5/3.3V VLL
VH
SP1
VL3
PE
DP1
INA
DN1
R1
INB
2.5/3.3V
Logic Input
+100V
SN1
SP2
-100V
INC
DP2
IND
DN2
SN2
GND VSS VL1
VL2 RX
T/R SW
50%
INA
INB
XDCR
50%
INB
td3
td1
IOUT
INA
td4
td2
50%
TX + DMP
0A
tf2
tr1
50%
90%
TX + DMP
0A
10%
tr2
tf1
IOUT
10%
90%
Supertex inc.
● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com
6
HV7361
Logic Control Table
Input Pulse
PE
1
0
Output MOSFETs
INA
INB
INC
IND
SP1
to
DP1
DN1
to
SN1
SP2
to
DP2
DN2
to
SN2
1
X
X
X
ON
X
X
X
X
1
X
X
X
ON
X
X
X
X
1
X
X
X
ON
X
X
X
X
1
X
X
X
ON
0
X
X
X
OFF
X
X
X
X
0
X
X
X
OFF
X
X
X
X
0
X
X
X
OFF
X
X
X
X
0
X
X
X
OFF
X
X
X
X
OFF
OFF
OFF
OFF
Pad Description
Pad
Location
Name
Function
A1
GND
Driver and level translator circuit ground return (0V)
A2
IND
Damping N-FET control signal logic Input, controlling N-FET2
A3
INC
Damping P-FET control signal logic Input, controlling P-FET2
A4
VSS
Negative voltage power supply (0V)
A6
VDD
Positive voltage supply (+10V), should connect to an external decoupling cap to VSS (0V)
A7
INB
Pulsing N-FET control signal logic Input, controlling N-FET1
A8
INA
Pulsing P-FET control signal logic Input, controlling P-FET1
A9
PE
Drive power enable Hi = ON, Low = OFF , Logic “1” voltage reference input (+1.8 to +3.3V)
B2
VL2
Gate-Drive negative voltage power supply (0V)
B8
VL1
Gate-Drive negative voltage power supply (0V)
F4
VH
Gate driver positive voltage power supply (+10V)
F7
VL3
VH to VL decoupling cap, should connect to VL1 & VL2 (0V) ground plane as short as possible
G4
RX
T/R switch output
P1
SP2
Source of P-FET2, positive high voltage power supply (0 to +100V) or GND
P2
DP2
Drain of P-FET2, transmit pulser output
P3
DN2
Drain of N-FET2, transmit pulser output
P4
SN2
Source of N-FET2, negative high voltage power supply (0 to -100V) or GND
P5
XDCR
T/R switch input
Supertex inc.
● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com
7
HV7361
Pad Description (cont.)
Pad
Location
Name
P6
SP1
Source of P-FET1, positive high voltage power supply (0 to +100V)
P7
DP1
Drain of P-FET1, transmit pulser output
P8
DN1
Drain of N-FET1, transmit pulser output
P9
SN1
Source of N-FET1, negative high voltage power supply (0 to -100V)
Function
Pad Configuration
0.50mm
2.00mm
7.0mm
0.50mm
3.50mm
9
0.50mm
8
7
5.0mm
6
5
4.0mm
4
3
2
1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
(Top View)
Supertex inc.
● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com
8
HV7361
22-Lead LFGA Package Outline (LA)
5.00x7.00mm body, 0.85mm height (max), 0.50mm pitch
e
D
9
8
7
6
5
4
3
2
1
A
e
B
C
e1
D
E
Note 1
(Index Area
D1/4 x E1/4)
F
e
G
E
H
J
K
e2
L
M
N
P
e3
Top View
Bottom View
View A
b
A
b
Side View
View A
Notes:
1. A Pin 1 identifier must be located in the index area indicated. The Pin 1 identifier can be: a molded mark/identifier; an embedded metal marker; or
a printed indicator.
Symbol
Dimension
(mm)
A
b
D
E
MIN
0.75
0.20
4.925
6.925
NOM
0.80
0.25
5.000
7.000
MAX
0.85
0.30
5.075
7.075
e
e1
e2
e3
0.50
BSC
2.00
BSC
3.50
BSC
4.00
BSC
Drawings not to scale.
Supertex Doc. #: DSPD-22LFGALA, Version A052511.
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline
information go to http://www.supertex.com/packaging.html.)
Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives
an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability
to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and
specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. (website: http//www.supertex.com)
Supertex inc.
©2012 Supertex inc. All rights reserved. Unauthorized use or reproduction is prohibited.
Doc.# DSFP-HV7361
A040512
9
1235 Bordeaux Drive, Sunnyvale, CA 94089
Tel: 408-222-8888
www.supertex.com