Product Overview
MJD243: 4.0 A, 100 V NPN Bipolar Power Transistor
For complete documentation, see the data sheet
Product Description
The Bipolar Power Transistor is designed for low voltage, low power, high gain audio amplifier applications.
Features
• Collector-Emitter Sustaining Voltage
VCEO(sus) = 100 Vdc (Min) @ IC = 10 mAdc
• High DC Current Gain
hFE = 40 (Min) @ IC= 200 mAdc
hFE= 15 (Min) @ IC = 1.0 Adc
• Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
• Straight Lead Version in Plastic Sleeves ("-1" Suffix)
• Lead Formed Version in 16 mm Tape and Reel ("T4" Suffix)
• Low Collector-Emitter Saturation Voltage VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc
VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Adc
• High Current-Gain-Bandwith Product fT = 40MHz (Min) @ IC = 100 mAdc
• Annular Construction for Low Leakage ICBO = 100 nAdc @ Rated VCB
• NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable
• These are PbFree Packages
For more features, see the data sheet
Part Electrical Specifications
Product
Compliance
Status
Polarity
Type
MJD243G
AEC
Qualified
Active
NPN
Active
Active
VCE(sat)
Max (V)
IC
Continuo
us (A)
V(BR)CEO
Min (V)
hFE Min
hFE Max
fT Min
(MHz)
PTM Max
(W)
Package
Type
General
Purpose
4
100
40
180
40
12.5
DPAK-3
NPN
General
Purpose
4
100
40
180
40
12.5
DPAK-3
NPN
General
Purpose
4
100
40
180
40
12.5
DPAK-3
Pb-free
Halide free
MJD243T4G
Pb-free
Halide free
NJVMJD243T4G
AEC
Qualified
PPAP
Capable
Pb-free
Halide free
For more information please contact your local sales support at www.onsemi.com
Created on: 6/30/2016