AD8306S Single Event Effects Radiation Report PDF

SINGLE EVENT LATCH‐UP TEST REPORT PRODUCT: AD8306AF/QMLR DIE TYPE: AD8306 DATE CODE: 1128 CASE TEMPERATURE: 125⁰C EFFECTIVE LET: 87.85MeV‐cm2/mg MINIMUM FLUENCE: 1E7 ion/cm2 FLUX: ~1E5 ion/cm2‐s FACILITIES: Lawrence Berkeley National Laboratories TESTED: August 31, 2011 The RADTESTSM DATA SERVICE is a compilation of radiation test results on Analog Devices’ Space grade products. It is designed to assist customers in selecting the right product for applications where radiation is a consideration. Many products manufactured by Analog Devices, Inc. have been shown to be radiation tolerant to most tactical radiation environments. Analog Devices, Inc. does not make any claim to maintain or guarantee these levels of radiation tolerance without lot qualification test. It is the responsibility of the Procuring Activity to screen products from Analog Devices, Inc. for compliance to Nuclear Hardness Critical Items (HCI) specifications. WARNING: Analog Devices, Inc. does not recommend use of this data to qualify other product grades or process levels. Analog Devices, Inc. is not responsible and has no liability for any consequences, and all applicable Warranties are null and void if any Analog product is modified in any way or used outside of normal environmental and operating conditions, including the parameters specified in the corresponding data sheet. Analog Devices, Inc. does not guarantee that wafer manufacturing is the same for all process levels. Page:1
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Single Event Latchup Testing of the AD8306 5 MHz–400 MHz 100 dB
High Precision Limiting-Logarithmic Amplifier for Analog Devices
Customer: Analog Devices (PO# 45352065)
RAD Job Number: 11-453
Part Types Tested: Analog Devices AD8306 5 MHz–400 MHz 100 dB High Precision LimitingLogarithmic Amplifier. The units were irradiated on August 31st, 2011.
Traceability Information: Manufacturing Code: E193554; see a photograph of a sample unit-under-test
in Appendix A for traceability information/part markings.
Quantity of Parts for Testing: Two units were exposed to a maximum fluence of 1E7ion/cm2 at a
maximum LET of approximately 88MeV-cm2/mg using worst-case bias and temperature (125°C).
Pre-Irradiation Burn-In: Burn-in not specified by the customer.
Referenced Test Standard(s): ASTM F1192, EIA/JESD57
Electrical Test Conditions: Supply current monitored during exposure.
Test Software / Hardware: ICC.XLS, See Appendix C, Table C.1 for a list of test equipment and
calibration dates.
Bias Conditions: All units-under-test were biased during heavy ion irradiation using a worst-case supply
potential. See Section 4 and Appendix B for the details of the bias conditions.
Ion Energy and LET Ranges: Minimum of 10MeV/n Xe beam with a maximum effective LET of
approximately 83MeV-cm2/mg. The 10MeV/n Xe beam had a minimum range of approximately 60μm in
silicon to the Bragg Peak (which is the shortest range particle used).
Heavy Ion Flux and Maximum Fluence Levels: Flux of approximately 1E5ions/cm2. Minimum 1E7
ions/cm2 per unit tested when no events were detected.
Facility and/or Radiation Source: Lawrence Berkeley National Laboratories (LBNL) Berkeley, CA
(10MeV/n beam).
Irradiation Temperature: Maximum 125°C case temperature as specified as the worst-case condition
by the customer.
The AD8306 5 MHz–400 MHz 100 dB High Precision Limiting-Logarithmic
Amplifier is IMMUNE to SEL events to the maximum tested LET of
approximately 88MeV-cm2/mg and at a worst-case temperature of 125°C.
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1.0. Overview and Background
It is well known that heavy ion exposure can cause temporary and/or permanent damage in
electronic devices. The damage can occur through various mechanisms including single event
latch-up (SEL), single event burnout (SEB) and single event gate rupture (SEGR). An SEL
event occurs when a parasitic npnp feedback latch structure becomes biased into the on state due
to a dense track of electron-hole pairs created along the heavy ion path in silicon. This latch-up
is self-sustaining since there is a positive feedback path created and requires a power cycle to
reset. A single event latch-up can lead to single event burnout if the current draw from the SEL
event is sufficient to damage the junction and/or bond wire. The damage is worse and/or
becomes evident with increasing linear energy transfer (LET) and fluence. The two test
standards usually used to govern this testing are ASTM F1192 and EIA/JESD57. This
destructive testing is usually performed at the maximum datasheet voltage and temperature to a
total fluence of not less than 1E7ion/cm2.
2.0. Single Event Latch-Up Test Apparatus
The single event latch-up testing described in this final report was performed at the Lawrence
Berkeley National Laboratories (LBNL) using the 88-Inch Cyclotron. The 88-Inch Cyclotron is
operated by the University of California for the US Department of Energy (DOE) and is a
K=140 sector-focused cyclotron with both light- and heavy-ion capabilities. Protons and other
light-ions are available at high intensities (10-20pμA) up to maximum energies of 55 MeV
(protons), 65 MeV (deuterons), 135 MeV (3He) and 140 MeV (4He). Most heavy ions through
uranium can be accelerated to maximum energies, which vary with the mass and charge state.
For the SEL testing described in this final report the units-under-test were be placed in the Cave
4B vacuum chamber aligned with the heavy ion beam line. The test platter in the vacuum
chamber has full x and y alignment capabilities along with 2-dimensional rotation, allowing for
a variety of effective LETs for each ion. For SEE testing Lawrence Berkeley Laboratories
provides the dosimetry via a local control computer running a Lab View based program. Each
ion is calibrated just prior to use using five photomultiplier tubes (PMTs). Four of the five
PMTS are used during the test to provide the beam statistics, while the center PMT is removed
following calibration. Figure 2.1 shows an illustration of the LBL facility; including the
location of Cave 4B, where the heavy ion SEE testing takes place.
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Figure 2.1. Map of 88-Inch Cyclotron Facility showing the location of Cave 4B, where the SEE testing was
performed.
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3.0. Radiation Test Conditions
The AD8306 5 MHz–400 MHz 100 dB High Precision Limiting-Logarithmic Amplifier
described in this final report was irradiated using the 10MeV/n Xe beam at the Lawrence
Berkeley National Laboratory using a single sided supply potential of +6.5V and at the worstcase temperatures of 125°C (±5°C). Figure 3.1 shows the test board used for the SEL testing
described in this final report (See the test circuit schematic in Appendix B for the additional
details of the bias conditions). The test board was mounted on the test stage at Berkeley, which
provided 3-axis of motion plus rotation. The board had multiple units-under-test that allowed for
sequential testing of the units without vacuum breaks during testing. Additional features of the
test board include:
1. Log Amps individually powered – power inputs filtered via RLC filters. (See top of site 1
schematic in Appendix B)
2. All 3 outputs (LMHi, LMLO, VLOG) are brought out for monitoring
3. Log Amp inputs held at steady-state cw rf signal during testing
4. Recommended (general application) value of RLIM = 400Ω tied from LMDR pin to
ground.
5. VLOG output offset compensated. (Output range from +0.34 to +2.4V is shifted to 0V to
2.06V.)
6. Outputs are buffered with Gain = +2 (VLOG output at scope should range from 0V to
4.12V)
The 10MeV/n beam was used to provide sufficient range in silicon while meeting the maximum
LET requirements of the program. The other beams available at Berkeley are the 4.5MeV/n
beam and the 16MeV/n beam. The 4.5MeV/n beam does not provide sufficient range for
destructive SEE testing while the 16MeV/n beam provides a much smaller selection of ions.
Figure 3.2 shows the 10MeV/n beam characteristics for Xe. As seen in the figure, the range to
the Bragg Peak is approximately 60μm while the surface LET is approximately 58MeV-cm2/mg
for the Xe beam. Figure 3.3 shows the characteristics for all the beams available at Berkeley.
Note that the units were de-encapsulated prior to testing and all exposures took place from the
top surface providing a distance to the active layer in Silicon of approximately 5 to 10μm.
As noted above, the devices were irradiated to a minimum fluence of 1E7ion/cm2. The flux
varied during the testing, but was consistently targeted to approximately 1E5ion/cm2-s,
depending on the ion species and the response of the unit-under-test. The irradiation of the unitsunder-test continued until either the minimum fluence was reached or a latchup event was
observed.
For the elevated temperature portion of the single event latch-up testing an aluminum plate
heater fixed to the back of the board and was used to heat the device-under-test (DUT) with an
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RTD used to monitor the temperature. The case temperature of the DUT was calibrated prior to
the testing to the RTD with a thermocouple, allowing the RTD to provide feedback and maintain
a calibrated case temperature (up to 125°C) throughout the testing. The data monitored during
the test (case temperature, supply voltage and supply current) was routed to the control room
(approximately 20-feet away) using shielded coaxial cable.
Figure 3.1. Single event test board prepared for mounting on the test stage at Berkeley. The board has two
units-under-test mounted simultaneously to minimize vacuum breaks during testing. There is also a heater
plate mounted to the backside of the board to provide the elevated temperature required for this testing.
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80.0
70.0
136Xe
LET (MeV/mg/cm2)
60.0
50.0
40.0
30.0
20.0
10.0
0.0
0
20
40
60
80
100
120
Depth in Si (micron)
Figure 3.2. Range of the 10MeV/n Xe beam into silicon. The range to the Bragg Peak for Xe (the shortest
range ion used) is approximately 60μm while the surface LET is approximately 58MeV-cm2/mg.
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Figure 3.3. Characteristics of all the beams available at Berkeley. For the testing discussed in this report the
10MeV/n beam was used exclusively.
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4.0. Tested Parameters
During heavy ion exposure the supply current to the unit-under-test was measured and recorded
in approximately 1-second increments. A plot of the supply currents versus time/fluence for
each of the heavy ion exposures is included in this final report (see Section 5, “Single Event
Latch-Up Test Results”). In addition to the supply current, the VLOG output (see the functional
block diagram of the unit-under-test in Appendix B) of the unit-under-test was also measured to
ensure proper operation/output level before, during and after the run. The units were run
dynamically with a 5MHz signal on the clock in pin with the VLOG output captured on a
digitizing oscilloscope. Note that the output transients are reported separately in a report entitled
“Single Event Transient Testing of the AD8306 5 MHz–400 MHz 100 dB High Precision
Limiting-Logarithmic Amplifier for Analog Devices”. However, as noted above for the SEL
portion of the testing we did verify proper operation and/or recovery of the device using an
oscilloscope that triggered whenever there was a significant distortion in the VLOG pin.
Table 4.1 summarizes the single event transient tests performed for the AD8306 5 MHz–400
MHz 100 dB High Precision Limiting-Logarithmic Amplifier. The table records the total
effective fluence, the average flux, the run time, the beam energy, the ion and the effective LET.
As noted above, the SEL testing occurred at three case temperatures of approximately 125°C
(±5°C).
In general the following minimum criteria must be met for a device to have considered passing
the SEL test for a given ion, LET and/or temperature: during the heavy ion exposure the DUT’s
supply current must remain within the unit’s specification limit without cycling power. If this
condition is not satisfied following the heavy ion testing, then the SEL testing could be logged as
a failure. Note that during heavy ion testing a substantial amount of total dose can be absorbed
by the units-under-test. If a functional failure occurs during or following the testing, it is
important to separate TID failures from destructive single event effects. Also, a single event
latch-up may not be a “destructive” event since it is still functional, however a unit which
experiences an SEL (i.e., a high sustained supply current requiring a power cycle to recover) is
considered to have failed this test even if the units are functional and meet parametric limits
following the testing.
For the testing described in this report the following general test procedure was used:
1.
2.
3.
4.
5.
6.
7.
8.
9.
Turn on DUT power (+6.5V)
Set RF input Frequency to 5MHz
Select DUT via USB addressing
Slowly vary input amplitude
Observe VLOG output (J5) using scope or multimeter
Set RF input amplitude to obtain 4V (2V from DUT VLOG output)
Adjust temperature to +125°C
Turn ON ion beam, observe/monitor/log device current
Repeat process with different ion energies as device response dictates
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Table 4.1. Summary of the single event latch-up test runs for the Analog Devices AD8306 5 MHz–
400 MHz 100 dB High Precision Limiting-Logarithmic Amplifier.
Run
#
DUT
Temp
(degC)
Total Eff
Fluence
Average
Flux
Beam
Ion
Eff
LET
Angle
157
DUT1
27
1.01E+07
8.88E+04
10 MeV
Xe 58.78
58.78
0
158
DUT1
27
1.01E+07
9.13E+04
10 MeV
Xe 58.78
87.85
48
159
DUT1
85
1.00E+07
9.22E+04
10 MeV
Xe 58.78
87.85
48
160
DUT1
125
1.01E+07
7.63E+04
10 MeV
Xe 58.78
87.85
48
161
DUT2
29
2.12E+06
8.33E+04
10 MeV
Xe 58.78
87.85
48
162
DUT2
85
1.00E+07
7.92E+04
10 MeV
Xe 58.78
87.85
48
163
DUT2
125
1.00E+07
8.46E+04
10 MeV
Xe 58.78
87.85
48
164
DUT2
125
1.01E+07
9.26E+04
10 MeV
Xe 58.78
67.87
30
165
DUT2
125
1.01E+07
9.15E+04
10 MeV
Xe 58.78
58.78
0
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5.0. Single Event Latch-Up Test Results
The AD8306 5 MHz–400 MHz 100 dB High Precision Limiting-Logarithmic Amplifier (of the
lot date code identified on the first page of this report) PASSED the SEL test with no significant
events detected at the worst-case tested LET of 88MeV-cm2/mg and at the worst-case
temperature of 125°C. Further, the unit-under-test continued operating normally based on a
check of the VLOG output without the need to cycle power. Note that SET events were detected
during the course of the SEL test and are reported in a separate report (as noted above).
However the SET events were short lived and the unit returned to proper operation within a short
period of time.
Table 5.1 show a summary of the single event latch-up data acquired. The table shows the part
type (AD8306), the serial number of the part irradiated, the test configuration (all units irradiated
with a 5MHz clock), the case temperature during testing, the ion species, the effective fluence,
the effective LET and whether or not an SEL event occurred. Based on the total fluence received
by each unit-under-test we can estimate that no device received more that 10krad(Si) of total
ionizing dose (TID) during any run and, therefore, in our opinion TID damage did not play a
significant role in these results.
Figures 5.1 through 5.4 show the supply current data during the SEL runs. In these figures the
supply current is plotted as a function of time. The plots show the response of the unit-under-test
from the start to the end of the exposure (See Table 5.1 for the fluence levels). As seen in these
figures, the units-under-test show essentially no change in supply current during the course of the
exposure indicating that no latchup events occurred.
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Table 5.1. Summary of the SEL test runs and results for the AD8306 5 MHz–400 MHz 100 dB
High Precision
Run
#
DUT
Temp
(degC)
Total Eff
Fluence
Beam
Ion
Eff
LET
Comments
157
DUT1
27
1.01E+07
10 MeV
Xe 58.78
58.78
27C, no latch
158
DUT1
27
1.01E+07
10 MeV
Xe 58.78
87.85
27C, no latch
159
DUT1
85
1.00E+07
10 MeV
Xe 58.78
87.85
85C, no latch
160
DUT1
125
1.01E+07
10 MeV
Xe 58.78
87.85
125C, no latch
161
DUT2
29
2.12E+06
10 MeV
Xe 58.78
87.85
29C, no latch
162
DUT2
85
1.00E+07
10 MeV
Xe 58.78
87.85
85C, no latch
163
DUT2
125
1.00E+07
10 MeV
Xe 58.78
87.85
125C, no latch
164
DUT2
125
1.01E+07
10 MeV
Xe 58.78
67.87
125C, no latch
165
DUT2
125
1.01E+07
10 MeV
Xe 58.78
58.78
125C, no latch
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Figure 5.1. Input supply current versus time/fluence for the AD8306 5 MHz–400 MHz 100 dB High Precision
Limiting-Logarithmic Amplifier (run 160). See Table 4.1 for the details of the test conditions.
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Figure 5.2. Input supply current versus time/fluence for the AD8306 5 MHz–400 MHz 100 dB High Precision
Limiting-Logarithmic Amplifier (run 163). See Table 4.1 for the details of the test conditions.
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Figure 5.3. Input supply current versus time/fluence for the AD8306 5 MHz–400 MHz 100 dB High Precision
Limiting-Logarithmic Amplifier (run 164). See Table 4.1 for the details of the test conditions.
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Figure 5.4. Input supply current versus time/fluence for the AD8306 5 MHz–400 MHz 100 dB High Precision
Limiting-Logarithmic Amplifier (run 165). See Table 4.1 for the details of the test conditions.
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6.0. Summary/Conclusions
The single event latch-up testing described in this final report was performed at the Lawrence
Berkeley National Laboratories (LBNL) using the 88-Inch Cyclotron. The 88-Inch Cyclotron is
operated by the University of California for the US Department of Energy (DOE) and is a
K=140 sector-focused cyclotron with both light- and heavy-ion capabilities. Protons and other
light-ions are available at high intensities (10-20pμA) up to maximum energies of 55 MeV
(protons), 65 MeV (deuterons), 135 MeV (3He) and 140 MeV (4He). Most heavy ions through
uranium can be accelerated to maximum energies, which vary with the mass and charge state.
The AD8306 5 MHz–400 MHz 100 dB High Precision Limiting-Logarithmic Amplifier
described in this final report was irradiated using a single sided supply potential of +6.5V and at
the worst-case temperatures of 125°C (±5°C). During heavy ion exposure the supply current to
the unit-under-test was measured and recorded in approximately 1-second increments. A plot of
the supply currents versus time/fluence for each of the heavy ion exposures is included in this
final report. In addition to the supply current, the VLOG output of the unit-under-test was also
measured to ensure proper operation/output level before, during and after the run. The units
were run dynamically with a 5MHz signal on the clock in pin.
The AD8306 5 MHz–400 MHz 100 dB High Precision Limiting-Logarithmic Amplifier (of the
lot date code identified on the first page of this report) PASSED the SEL test with no significant
events detected at the worst-case tested LET of 88MeV-cm2/mg and at the worst-case
temperature of 125°C. Further, the unit-under-test continued operating normally based on a
check of the output levels without needed to cycle power. Note that SET events were detected
during the course of the SEL test and are reported in a separate report (as noted above).
However the SET events were short lived and the unit returned to proper operation within a short
period of time.
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Appendix A: Photograph of a Sample Unit-Under-Test (front and reverse sides)
for Device Traceability and a Decapsulated Unit Ready for SEL Testing
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Appendix B: Schematic of and Photograph of the Test Board (Single Test Site)
Used During Heavy Ion Exposure and Functional Block Diagram of the UnitUnder-Test
C1_1
470pF
1
C2_1
470pF
C4_1
0.1uF
1
C3_1
0.1uF
5
2
C5_1
1uF
2 R2_1
VSP2_1
2
VSP1_1
1
5
2
Ferrite Bead
2
2
1 R1_1
1
2
2
FB1_1
1
1
2
S1_PWR
1
S1_PWR
C6_1
1uF
1
1
FB2_1
2
S1_PWR
Ferrite Bead
GND
GND
GND
1 JMP2_1 2
LO
C8_1
1
0.01uF
AD8306S
VSP2_1
16
15
14
13
12
11
10
9
1
VLOG
VPS2
PADL
LMHI
LMLO
PADL
FLTR
LMDR
R3_1
49.9
R4_1
49.9
2
COM2
VPS1
PADL
INHI
INLO
PADL
COM1
ENBL
1
U1_1
R7_1
1.00k
2
GND
2
R8_1
52.3
3
RF_IN1
0.01uF
1
2
3
4
5
6
7
8
2
JMP1_1
RF_IN1
VSP1_1
C7_1
1
2
R5_1
400
VSP1_1
C9_1
1
LMHI_1
LMHI_1
0.01uF
1
2
VLOG_1
2
GND
2
1
HI
1
1
2
3
VLOG_1
2
C10_1
1
LMLO_1
0.01uF
GND
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Appendix C: Electrical Test Parameters and Equipment List
The single event latch-up testing described in this final report was performed at the Lawrence
Berkeley National Laboratories (LBNL) using the 88-Inch Cyclotron. The 88-Inch Cyclotron is
operated by the University of California for the US Department of Energy (DOE) and is a K=140
sector-focused cyclotron with both light- and heavy-ion capabilities. Protons and other light-ions
are available at high intensities (10-20pμA) up to maximum energies of 55 MeV (protons), 65
MeV (deuterons), 135 MeV (3He) and 140 MeV (4He). Most heavy ions through uranium can be
accelerated to maximum energies, which vary with the mass and charge state.
The devices were irradiated to a minimum fluence of 1E7ion/cm2, if no events were detected.
Table C.1 shows the test equipment used for this testing.
Table C.1. Test equipment and calibration dates for testing the AD8306 5 MHz–400 MHz 100 dB High
Precision Limiting-Logarithmic Amplifier
HP 34401A Multimeter
3146A65284
5/15/011
5/15/12
ICC measurement
Agilent E3642A DC Power
MY40004345
Supply
N/A
N/A
Test power supplyPositive Supply
Agilent E3631A DC Power
K920920312
Supply
N/A
N/A
Test power supplyNegative Supply
Fluke Model 77 Multimeter 38301747
2/19/11
2/19/12
Vcc measurement at the
DUT
Omega HH12 Handheld
Thermometer
233126
2/19/11
2/19/12
Temperature Calibration
Tektronics TDS5104B
Oscilloscope
B011044
10/22/10
10/22/11
Output Waveform
Measurements
22
An ISO 9001:2008 and DSCC Certified Company
Page:23
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