ADL5501S Single Event Effects Radiation Report PDF

SINGLE EVENT EFFECTS TEST REPORT PRODUCT: ADL5501 DIE TYPE: ADL5501 Rev A DATE CODE: 1138 CASE TEMPERATURE: SEL: 125⁰C SET: 25⁰C EFFECTIVE LET: SEL: 84.85 MeV‐cm2/mg SET: (3.63 – 60) MeV‐cm2/mg TOTAL EFFECTIVE FLUENCE: 1e7 Ions/cm2 FACILITIES: RADEF, University of Jyväskylä TESTED: February, 2013 The RADTESTSM DATA SERVICE is a compilation of radiation test results on Analog Devices’ Space grade products. It is designed to assist customers in selecting the right product for applications where radiation is a consideration. Many products manufactured by Analog Devices, Inc. have been shown to be radiation tolerant to most tactical radiation environments. Analog Devices, Inc. does not make any claim to maintain or guarantee these levels of radiation tolerance without lot qualification test. It is the responsibility of the Procuring Activity to screen products from Analog Devices, Inc. for compliance to Nuclear Hardness Critical Items (HCI) specifications. WARNING: Analog Devices, Inc. does not recommend use of this data to qualify other product grades or process levels. Analog Devices, Inc. is not responsible and has no liability for any consequences, and all applicable Warranties are null and void if any Analog product is modified in any way or used outside of normal environmental and operating conditions, including the parameters specified in the corresponding data sheet. Analog Devices, Inc. does not guarantee that wafer manufacturing is the same for all process levels. Page:1
SINGLE EVENT EFFECTS
TEST REPORT
Test Type:
Heavy ion
Test facility:
RADEF, University of Jyväskylä, Jyväskylä, Finland
Test Date:
February 2013
Part Type:
ADL5501
Part Description:
50 MHz to 6 GHz TruPwr Detector
Part Manufacturer:
Analog Devices
Analog Devices contract n° 45399090
Hirex reference :
HRX/SEE/0437
Issue : 01
Written by :
Mehdi Kaddour
Design Engineer
Authorized by:
F.X. Guerre
Study Manager
Date :
HIREX Engineering SAS au capital de 180 000 € - RCS Toulouse B 389 715 525
Siège social: 2 rue des Satellites - 31520 Toulouse
June 21, 2013
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Hirex Engineering SEE Test Report Ref. : Issue : HRX/SEE/0437 01 RESULTS SUMMARY
Facility
RADEF, University of Jyväskylä, Jyväskylä, Finland
Test date
February 2013
Device description
ADL5501
Analog Devices
FP-10
ADL5501AX1 1138 serial
Part type:
Manufacturer:
Package:
Top marking:
Bottom marking:
Date code:
Die dimensions:
1138
1.64 mm X 1.36 mm
SET Results
Bias voltage was set to +5 V and room temperature with sine wave 9dBm at 50MHz signal at the input.
Four samples have been exposed over a LET range from 3.63 to 60 MeV/(mg/cm²) for SET testing.
SET events were detected at any tested LET.
Asymptotic SET cross-section / channel is about 7 10-4 cm2 while LET threshold is below 3.5
MeV/(mg/cm2).
W
xo
A
s
22
1
7.00E‐04
1.6
see paragraph 7 for Weibull parameters
definition
SEL Results
No SEL was detected with Vd =+5.5V and with a DUT temperature of 125°C at a LET of 85MeV/(mg/cm²)
and a fluence of 1 10+07 ions/ cm².
HRX/SEE/0437 Issue 01
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Hirex Engineering Ref. : Issue : SEE Test Report HRX/SEE/0437 01 DOCUMENTATION CHANGE NOTICE
Issue
Date
Page
01
21-Jun-13
All
Change Item
Original issue
Contributors to this work:
Benjamin Crouzat
Mehdi Kaddour
HRX/SEE/0437 Issue 01
Hirex Engineering
Hirex Engineering
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Hirex Engineering SEE Test Report Ref. : Issue : HRX/SEE/0437 01 SEE TEST REPORT
TABLE OF CONTENTS
1 INTRODUCTION .................................................................................................................................................... 5 2 APPLICABLE AND REFERENCE DOCUMENTS ............................................................................................ 5 2.1 2.2 3 DEVICE INFORMATION ...................................................................................................................................... 6 3.1 3.2 3.3 4 SET ..................................................................................................................................................................... 9 SEL ..................................................................................................................................................................... 9 ADL5501 TEST PRINCIPLE AND CONDITIONS ..................................................................................................... 10 SEE TEST RESULTS ............................................................................................................................................ 11 6.1 6.2 7 TEST CHAMBER .................................................................................................................................................... 7 BEAM QUALITY CONTROL .................................................................................................................................... 8 DOSIMETRY ......................................................................................................................................................... 8 USED IONS ........................................................................................................................................................... 8 TEST SET-UP ........................................................................................................................................................... 9 5.1 5.2 5.3 6 DEVICE DESCRIPTION........................................................................................................................................... 6 SAMPLE IDENTIFICATION ..................................................................................................................................... 6 STACK CONSTRUCTION ANALYSIS....................................................................................................................... 7 RADEF FACILITY .................................................................................................................................................. 7 4.1 4.2 4.3 4.4 5 APPLICABLE DOCUMENTS ................................................................................................................................... 5 REFERENCE DOCUMENTS .................................................................................................................................... 5 SEL ................................................................................................................................................................... 11 SET ................................................................................................................................................................... 11 GLOSSARY ............................................................................................................................................................ 14 LIST OF FIGURES
Figure 2: ADL5501 device identification .................................................................................................................... 6 Figure 3: Die microsection for the ADL5501 part ...................................................................................................... 7 Figure 4: Heavy ion test set-up.................................................................................................................................. 9 Figure 5: ADL5501 test configuration ...................................................................................................................... 10 Figure 6 – ADL5501, photo of the daughter board .................................................................................................. 10 Figure 7 – DUT1, Worst case events with Xenon, RADEF, FEB13 ........................................................................ 11 Figure 8: SET Cross-section / DUT ......................................................................................................................... 12 Figure 9: Average SET Cross-section / DUT, Weibull fit......................................................................................... 12 Figure 10 – SET envelop for the 4 DUTs exposed at the same time, with the different ions, RADEF, FEB13 ...... 13 LIST OF TABLES
Table 1: Used ions ..................................................................................................................................................... 8 Table 2 – RADEF, FEB 2013, ADL5501 runs details .............................................................................................. 11 HRX/SEE/0437 Issue 01
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Hirex Engineering 1
SEE Test Report Ref. : Issue : HRX/SEE/0437 01 Introduction
This report presents the results of Heavy Ions test program carried out on a 50 MHz to 6 GHz TruPwr
Detector ADL5501. During February 2013, four samples were used for heavy ions testing at RADEF,
University of Jyväskylä, Jyväskylä, Finland.
This work was performed for Analog Devices under contract n° 45399090.
2
Applicable and Reference Documents
2.1
Applicable Documents
2.2
AD-1.
ADL5501: 50 MHz to 6 GHz TruPwr Detector Data Sheet (Rev B).
AD-2.
Hirex proposal PRO/4032 Issue 02.
Reference Documents
RD-1.
Single Event Effects Test method and Guidelines ESA/SCC basic specification No 25100
HRX/SEE/0437 Issue 01
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Hirex Engineering 3
3.1
3.2
Ref. : Issue : SEE Test Report HRX/SEE/0437 01 DEVICE INFORMATION
Device description
The ADL5501 is a 50 MHz to 6 GHz TruPwr Detector. ADL5501 Part type: Analog Devices Manufacturer: FP‐10 Package: Top marking: ADL5501AX1 1138 serial ‐ Bottom marking: 1138 Date code: 1.64 mm X 1.36 mm Die dimensions: Sample identification
ADL5501 parts were delivered by Analog Devices. 10 samples were prepared and delidded to be tested to heavy
ions. 8 samples were verified fully functional before the test campaign, and 4 were tested under irradiation.
Photo 1 – Device top view
Photo 2 – Device delidded
Photo 3 – Die marking
Figure 1: ADL5501 device identification
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Hirex Engineering SEE Test Report Ref. : Issue : HRX/SEE/0437 01 The assembly is equipped with a standard mounting fixture. The adapters required to accommodate the special board
configurations and the vacuum feed-through can also be made in the laboratory’s workshops. The chamber has an
entrance door, which allows rapid changing of the circuit board or individual components.
A CCD camera with a magnifying telescope is located at the other end of the beam line to determine accurate
positioning of the components. The coordinates are stored in the computer’s memory allowing fast positioning of
various targets during the test.
4.2
Beam quality control
For measuring beam uniformity at low intensity, a CsI(Tl) scintillator with a PIN-type photodiode readout is fixed in the
mounting fixture. The uniformity is measured automatically before component irradiation and the results can be
plotted immediately for more detailed analysis. A set of four collimated PIN-CsI(Tl) detectors is located in front of the
beam entrance. The detectors are operated with step motors and are located at 90 degrees with respect to each
other. During the irradiation and uniformity scan they are set to the outer edge of the beam in order to monitor the
stability of the homogeneity and flux.
4.3
Dosimetry
The flux and intensity dosimeter system contains a Faraday cup, several collimators, a scintillation counter and four
PIN-CsI(Tl) detectors. Three collimators of different sizes and shapes are placed 25 cm in front of the device under
test. They can be used to limit the beam to the active area to be studied.
At low fluxes a plastic scintillator with a photomultiplier tube is used as an absolute particle counter. It is located
behind the vacuum chamber and is used before the irradiation to normalize the count rates of the four PIN-CsI(Tl)
detectors.
4.4
Used ions
The following Table 1 summarizes the used ions during the test campaign.
Ion
20 Ne+6
40 Ar+12
56 Fe+15
82 Kr+22
131 Xe+35
Beam energy
(MeV)
186
372
523
768
1217
Range (Si)
(µm)
146
118
97
94
89
LET*
(MeV.cm2/mg)
3.63
10.2
18.5
32.2
60.0
*: LET at surface SRIM2006
Table 1: Used ions
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Hirex Engineering 5
Ref. : Issue : SEE Test Report HRX/SEE/0437 01 Test Set-up
Test system Figure 3 shows the principle of the Heavy Ion test system.
The test system is based on a Virtex5 FPGA (Xilinx). It runs at 50 MHz. The test board has 168 I/Os
which can be configured using several I/O standards.
The test board includes the voltage/current monitoring and the latch-up management of the DUT power
supplies up to 24 independent channels.
The communication between the test chamber and the controlling computer is effectively done by a
100Mbit/s Ethernet link which safely enables high speed data transfer.
Chamber Wall
External to Chamber
Internal to Chamber
Temperature
Control system
Voltage/Current
Monitoring
External Power
Supplies
COMPUTER
Graphical
User
Interface
Signal
Generators
LAN
VIRTEX 5
FPGA
4 Chanel
400MHz Digitizer
I/O
Interface
DUTs
BEAM COUNTER
Figure 3: Heavy ion test set-up
5.1
SET
All along the test Sine wave 9dBm at 50MHz signal was applied to the 4 ADL5501inputs.
Then, DUT output is a constant voltage signal of about 2.8V.
Upper and lower thresholds of +/130mV are applied to detect the SETs.
5.2
SEL
SEL detection is performed by monitoring the DUT supply currents. When a SEL occurs (typically over 50mA during
at least 2 milliseconds), then device is switched off during 1 second, and the SEL event is registered in the log file.
The SEL threshold can be adjusted during the test, but in general it is adjusted before starting the test. During all
irradiation time, the supply currents of each DUT are monitored and recorded.
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Hirex Engineering 5.3
SEE Test Report Ref. : Issue : HRX/SEE/0437 01 ADL5501 test principle and conditions
Figure 4 shows the test configuration.
In order to test the ADL5501 50 MHz to 6 GHz TruPwr Detector, one daughter board was designed. Four DUTs were
soldered on the boards (see Figure 5)
The four samples on each board were irradiated in the same time.
Figure 4: ADL5501 test configuration
Supply Voltages
Input: Sine wave 9dBm at 50MHz
Supply voltage for SET: +5V
Supply voltage for SEL: +5.5V at 85°C and 125°C
Consumptions
Dut 1: 5 mA
Dut 2: 5 mA
Dut 3: 5 mA
Dut 4: 5 mA
Figure 5 – ADL5501, photo of the daughter board
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Hirex Engineering 6
Ref. : Issue : SEE Test Report HRX/SEE/0437 01 SEE Test Results
SET X‐section
/ DUT
total
SET X‐section DUT4
SET X‐section DUT3
SET X‐section DUT2
SET X‐section DUT1
Comment
SET_CH4
SET_CH3
SET_CH2
SET_CH1
SET
SEL
Vcc
Temp SNs
Board
Mean Flux
Time
Fluence
Eff. LET
Ar 10.2
2 Ne 3.63
Tilt
Ion
1
LET
RUN HRX
Four samples were exposed to 5 different LETs into a range from 3.63 MeV.cm²/mg up to 60
MeV.cm²/mg at ambient temperature for SET characterization and at 85°C and 125 °C for SEL
characterization.
The detailed results table is presented in Table 2.
0 10.20 6.51E+05 461 1410 1
1 to 4 Room
5
0 1320 156 176 199 129
10.2 2.40E‐04 2.70E‐04 3.06E‐04 1.98E‐04 660 2.53E‐04
0
1 to 4 Room
5
0
784
95 120 94
3.63 9.50E‐05 1.20E‐04 9.40E‐05 7.90E‐05 388 9.70E‐05
790
3.63 1.00E+06 479 2090 1
79
3
Fe 18.5
0 18.50 2.00E+05 137 1460 2 5 to 8 Room
5
0
79 107 120 72
18.5 3.95E‐04 5.35E‐04 6.00E‐04 3.60E‐04 378 4.73E‐04
4
Fe 18.5
0 18.50 5.00E+05 625
5
0 1804 193 262 245 178
18.5 3.86E‐04 5.24E‐04 4.90E‐04 3.56E‐04 878 4.39E‐04
32.2 4.96E‐04 6.16E‐04 6.06E‐04 4.50E‐04 1084 5.42E‐04
800
2 5 to 8 Room
5
Kr 32.2
0 32.20 5.00E+05 841
595
2 5 to 8 Room
5
0 2216 248 308 303 225
6
Xe
60
0 60.00 5.00E+05 636
786
2 5 to 8 Room
5
0 2870 358 387 369 281
7
Xe
60
45 84.85 1.00E+07 2754 3630 2 5 to 8 85
5.5
0
‐
set n/a
60
8
Xe
60
45 84.85 1.00E+07 2567 3900 2 5 to 8 125
5.5
0
‐
set n/a
60
60
7.16E‐04 7.74E‐04 7.38E‐04 5.62E‐04 1395 6.98E‐04
Table 2 – RADEF, FEB 2013, ADL5501 runs details
6.1
6.2
SEL
No SEL has been observed with the following ions Ne, Ar, Fe, Kr and Xe. With Xenon additional specific
SEL tests were performed with supply voltage at 5.5V and DUT temperature at 85°C and 125°C. No SEL
has been detected at a LET of 85MeV/(mg/cm²) with fluences up to 1 10+07 ions/cm².
SET
First event was observed with Neon at LET = 3.63 MeV.cm²/mg. 1 LSB is for 13mV.
Figure 6 presents for Xenon the worst case events while Figure 9 show the events envelop for each ion and for the
fou DUTs exposed at the same time.
With Xenon (LET= 60), worst case can extend up to about 10µs, and worst case amplitude can go up to saturation
(5Volts) for positive events with a voltage output at about 2.8V and can attain 0.7V for negative transients.
SET cross-section per device is shown in Figure 7 and Weibull fit in Figure 8.
Figure 6 – DUT1, Worst case events with Xenon, RADEF, FEB13
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Hirex Engineering SEE Test Report Ref. : Issue : HRX/SEE/0437 01 Figure 7: SET Cross-section / DUT
W
xo
A
s
22
1
7.00E‐04
1.6
see paragraph 7 for Weibull parameters
definition
Figure 8: Average SET Cross-section / DUT, Weibull fit
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Hirex Engineering SEE Test Report Ref. : Issue : HRX/SEE/0437 01 Neon
LET=3.63
Argon
LET=10.2
Iron
LET=18.5
Krypton
LET=32.2
Xenon
LET=60
Figure 9 – SET envelop for the 4 DUTs exposed at the same time, with the different ions, RADEF, FEB13
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Hirex Engineering 7
Ref. : Issue : SEE Test Report Glossary
Most of the definitions here below are from JEDEC standard JESD89A
DUT: Device under test.
Fluence (of particle radiation incident on a surface): The total amount of particle radiant energy incident on
a surface in a given period of time, divided by the area of the surface.
In this document, Fluence is expressed in ions per cm2.
Flux: The time rate of flow of particle radiant energy incident on a surface, divided by the area of that
surface.
In this document, Flux is expressed in ions per cm2*s.
Single-Event Effect (SEE): Any measurable or observable change in state or performance of a
microelectronic device, component, subsystem, or system (digital or analog) resulting from a single energetic
particle strike.
Single-event effects include single-event upset (SEU), multiple-bit upset (MBU), multiple-cell upset (MCU),
single-event functional interrupt (SEFI), single-event latch-up (SEL.
Single-Event Transient (SET): A soft error caused by the transient signal induced by a single energetic
particle strike.
Single-Event Latch-up (SEL): An abnormal high-current state in a device caused by the passage of a
single energetic particle through sensitive regions of the device structure and resulting in the loss of device
functionality.
SEL may cause permanent damage to the device. If the device is not permanently damaged, power cycling
of the device (off and back on) is necessary to restore normal operation.
An example of SEL in a CMOS device is when the passage of a single particle induces the creation of
parasitic bipolar (p-n-p-n) shorting of power to ground.
Single-Event Latch-up (SEL) cross-section: the number of events per unit fluence. For chip SEL crosssection, the dimensions are cm2 per chip.
Error cross-section: the number of errors per unit fluence. For device error cross-section, the dimensions
are cm2 per device. For bit error cross-section, the dimensions are cm2 per bit.
Tilt angle: tilt angle, rotation axis of the DUT board is perpendicular to the beam axis; roll angle, board
rotation axis is parallel to the beam axis
Weibull Function:
F(x) = A (1- exp{-[(x-x0)/W]s})
x = effective LET in MeV-cm2 /milligram;
F(x) = SEE cross-section in square-cm2/bit;
A = limiting or plateau cross-section;
x0 = onset parameter, such that F(x) = 0 for x < x0;
W = width parameter;
s = a dimensionless exponent.
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