BFP460 NPN Silicon RF Transistor • General purpose low noise amplifier 3 for low voltage, low current applications 2 4 • High ESD robustness, typical 1500V (HBM) 1 • Low minimum noise figure 1.1 dB at 1.8 GHz • High linearity: output compression point OP1dB = 13 dBm @ 3V, 35mA, 1.8GHz • Easy to use standard package with visible leads • Pb-free (RoHS compliant) package • Qualified according AEC Q101 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFP460 Marking Pin Configuration ABs 1 = E 2 = C 3 = E 4=B - Package - SOT343 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO Value Unit V TA > 0 °C 4.5 TA ≤ 0 °C 4.2 Collector-emitter voltage VCES 15 Collector-base voltage VCBO 15 Emitter-base voltage VEBO 1.5 Collector current IC 70 Base current IB 7 Total power dissipation1) Ptot 230 mW Junction temperature TJ 150 °C Ambient temperature TA -65 ... 150 Storage temperature T Stg -65 ... 150 mA TS ≤ 92°C 1T S is measured on the collector lead at the soldering point to the pcb 2010-05-17 1 BFP460 Thermal Resistance Parameter Symbol Value Unit Junction - soldering point 1) RthJS ≤ 250 K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. 4.5 5.8 - DC Characteristics Collector-emitter breakdown voltage V(BR)CEO V IC = 1 mA, IB = 0 Collector-emitter cutoff current nA ICES VCE = 15 V, VBE = 0 - - 1000 VCE = 2 V, VBE = 0 - 1 30 VCE = 5 V, VBE = 0 , TA = 85°C - 2 40 VCB = 2 V, I E = 0 - 1 30 VCB = 5 V, I E = 0 - - 30 IEBO - 1 500 hFE 90 120 160 Verified by random sampling Collector-base cutoff current ICBO Emitter-base cutoff current VEB = 0,5 V, IC = 0 DC current gain - VCE = 3 V, I C = 20 mA , pulse measured 1For calculation of RthJA please refer to Application Note AN077 Thermal Resistance 2010-05-17 2 BFP460 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. AC Characteristics (verified by random sampling) 16 22 GHz Transition frequency fT IC = 30 mA, VCE = 3 V, f = 1 GHz Collector-base capacitance Ccb - 0.32 0.45 Cce - 0.28 - Ceb - 0.55 - pF VCB = 3 V, f = 1 MHz, VBE = 0 , emitter grounded Collector emitter capacitance VCE = 3 V, f = 1 MHz, VBE = 0 , base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded Minimum noise figure dB NFmin VCE = 2V, IC = 3 mA , ZS = ZSopt, f = 100 MHz - 0.7 - VCE = 3V, IC = 5 mA , ZS = ZSopt, f = 1.8 GHz - 1.1 - VCE = 3V, IC = 5 mA , ZS = ZSopt, f = 3 GHz - 1.2 - 2010-05-17 3 BFP460 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. AC Characteristics (verified by random sampling) Maximum power Gain1) G max dB IC = 3 mA, VCE = 1.5 V, ZS = ZSopt,ZL = ZLopt, f = 100 MHz - 26.5 - IC = 20 mA, VCE = 3 V, ZS = ZSopt, ZL = ZLopt, f = 1,8 GHz - 17.5 - f = 3 GHz - 12.5 - |S 21e|2 Transducer gain dB IC = 3 mA, VCE = 1.5 V, ZS = ZL = 50Ω, - 20 - f = 1.8 GHz - 15 - f = 3 GHz - 10.5 - f = 100 MHz IC = 20 mA, VCE = 3 V, Z S = ZL = 50Ω , Third order intercept point at output 2) IP 3 dBm VCE = 3 V, I C = 20 mA, f = 100 MHz - 23.5 - VCE = 3 V, I C = 20 mA, f = 1.8 GHz - 27.5 - VCE = 3V, IC = 20mA , ZS=ZL = 50Ω, f = 100 MHz - 9.5 - VCE = 3V, IC = 20mA, ZS=ZL = 50Ω, f = 1.8 GHz - 11.5 - VCE = 3V, IC = 35mA, ZS=ZL = 50Ω, f = 1.8 GHz - 13 - 1dB compression point at output P-1dB 1/2 ma = |S 21 / S12 | (k-(k²-1) ), Gms = S 21 / S12 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz 1G 2010-05-17 4 BFP460 Total power dissipation Ptot = ƒ(TS) Collector-base capacitance Ccb= ƒ(VCB) f = 1MHz 260 V 0.7 pF 220 200 0.5 CCB 180 160 0.4 140 120 0.3 100 80 0.2 60 40 0.1 20 0 0 15 30 45 60 75 90 105 120 A 0 0 150 2 4 6 8 10 V 14 VCB Third order Intercept Point IP3=ƒ(IC) Transition frequency fT = ƒ(IC) (Output, ZS=ZL=50Ω) f = 1 GHz VCE = parameter, f = 1800MHz VCE = parameter 24 33 dBm 4V 29 2V 20 3V 27 25 1V 18 2V 23 fT IP3 3-4V GHz 21 16 14 19 17 12 15 10 13 1V 11 8 9 6 7 5 0 10 20 30 40 mA 4 0 55 IC 10 20 30 40 mA 60 IC 2010-05-17 5 BFP460 Power gain Gma, Gms , |S 21|2 = ƒ (f) Power gain Gma, Gms = ƒ (I C) VCE = 3 V, I C = 20 mA VCE = 3V f = parameter in GHz 50 24 dB 0.9 dB 40 20 35 18 30 16 G G 1.8 25 20 15 2.4 14 Gms 3 12 |S21|² 4 10 Gma 5 10 8 5 6 0 0 1 2 3 GHz 4 4 0 6 6 10 20 30 40 mA 60 IC f Power gain Gma, Gms = ƒ (VCE) IC = 20 mA Noise figure F = ƒ(I C) VCE = 2 V, f = parameter f = parameter in GHz ZS = ZSopt 24 0.9 dB 20 1.8 G 18 16 2.4 14 3 12 4 10 5 8 6 6 4 0.5 1 1.5 2 2.5 3 3.5 V 4.5 VCE 2010-05-17 6 BFP460 Third order Intercept Point IP3=ƒ(IC) Noise figure F = ƒ(f) (Output, ZS=ZL=50Ω) VCE = 2V, ZS = ZSopt , I C = parameter VCE = parameter, f = 100MHz 32 dBm IP3 24 20 1.5V 2V 2.5V 3V 4V 16 12 8 4 0 0 10 20 30 40 50 60 mA 80 IC Source impedance for min. noise figure vs. frequency VCE = 2V, IC = parameter 2010-05-17 7 BFP460 SPICE Parameter For the SPICE model as well as for the S-parameters (including noise parameters) please refer to our internet website www.infineon.com/rf.models. Please consult our website and download the latest versions before actually starting your design. You find the BFP460 SPICE model in the internet in MWO- and ADS- format which you can import into these circuit simulation tools very quickly and conveniently. The simulation data have been generated and verified using typical devices. The BFP460 SPICE model reflects the typical DC- and RF-performance with high accuracy. 2010-05-17 8 Package SOT343 BFP460 Package Outline 0.9 ±0.1 2 ±0.2 0.1 MAX. 1.3 0.1 A 1 2 0.1 MIN. 0.15 1.25 ±0.1 3 2.1 ±0.1 4 0.3 +0.1 -0.05 +0.1 0.15 -0.05 +0.1 0.6 -0.05 4x 0.1 0.2 M M A Foot Print 1.6 0.8 0.6 1.15 0.9 Marking Layout (Example) Manufacturer 2005, June Date code (YM) BGA420 Type code Pin 1 Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 0.2 2.3 8 4 Pin 1 2.15 1.1 2010-05-17 9 BFP460 Datasheet Revision History: 17 May 2010 This datasheet replaces the revision from 14 August 2008. The product itself has not been changed and the device characteristics remain unchanged. Only the product description and information available in the datasheet has been expanded and updated. Previous Revision: 14 August 2008 Page Subject (changes since last revision) 1 Maximum ratings for collector current ICmax, base current IBmax and total power dissipation Ptot increased 2 Typical values for leakage currents included, maximum leakage current values reduced 3 Noise description at 100 MHz added 4 Gain and linearity description at 100 MHz added 5-7 Curves for IP3 and noise at 100 MHz added 2010-05-17 10 BFP460 Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ( <www.infineon.com>). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 2010-05-17 11