PHILIPS BF570

DISCRETE SEMICONDUCTORS
DATA SHEET
BF570
NPN medium frequency transistor
Product data sheet
Supersedes data of 2004 Jan 13
2004 Mar 15
NXP Semiconductors
Product data sheet
NPN medium frequency transistor
BF570
FEATURES
PINNING
• Low current (max. 100 mA)
PIN
DESCRIPTION
• Low voltage (max. 15 V)
1
base
• Low feedback capacitance (max. 2.2 pF).
2
emitter
3
collector
APPLICATIONS
• Monitors
• Battery equipped applications.
handbook, halfpage
DESCRIPTION
3
3
NPN transistor in a SOT23 plastic package.
1
MARKING
TYPE NUMBER
1
MARKING CODE(1)
BF570
61* or B26
2
2
Top view
MAM255
Note
1. * = p : Made in Hong Kong.
* = t : Made in Malaysia.
* = W : Made in China.
Fig.1
Simplified outline (SOT23) and symbol.
ORDERING INFORMATION
TYPE
NUMBER
BF570
PACKAGE
NAME
−
DESCRIPTION
VERSION
plastic surface mounted package; 3 leads
SOT23
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
40
V
VCEO
collector-emitter voltage
open base
−
15
V
ICM
peak collector current
−
200
mA
Ptot
total power dissipation
Tamb ≤ 25 °C
−
250
mW
hFE
DC current gain
IC = 10 mA; VCE = 1 V
40
−
fT
transition frequency
IC = 40 mA; VCE = 10 V; f = 100 MHz
490
−
2004 Mar 15
2
MHz
NXP Semiconductors
Product data sheet
NPN medium frequency transistor
BF570
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
40
V
VCEO
collector-emitter voltage
open base
−
15
V
VEBO
emitter-base voltage
open collector
−
4.5
V
IC
collector current (DC)
−
100
mA
ICM
peak collector current
−
200
mA
Ptot
total power dissipation
−
250
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Tamb ≤ 25 °C
THERMAL CHARACTERISTICS
SYMBOL
Rth(j-a)
PARAMETER
thermal resistance from junction to ambient
VALUE
UNIT
500
K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
IE = 0 A; VCB = 20 V
−
−
400
nA
IE = 0 A; VCB = 20 V; Tj = 125 °C
−
−
30
µA
IC = 0 A; VEB = 2 V
−
−
100
nA
DC current gain
IC = 10 mA; VCE = 1 V
40
−
−
Cre
feedback capacitance
IC = 0 A; VCE = 10 V; f = 1 MHz
−
1.6
2.2
pF
fT
transition frequency
IC = 10 mA; VCE = 10 V; f = 100 MHz
500
−
−
MHz
IC = 40 mA; VCE = 10 V; f = 100 MHz
490
−
−
MHz
ICBO
collector cut-off current
IEBO
emitter cut-off current
hFE
2004 Mar 15
3
NXP Semiconductors
Product data sheet
NPN medium frequency transistor
BF570
PACKAGE OUTLINE
Plastic surface-mounted package; 3 leads
SOT23
D
E
B
A
X
HE
v M A
3
Q
A
A1
1
2
e1
bp
c
w M B
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
1.9
0.95
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
OUTLINE
VERSION
SOT23
2004 Mar 15
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
TO-236AB
4
NXP Semiconductors
Product data sheet
NPN medium frequency transistor
BF570
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
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pertaining to warranty, intellectual property rights
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reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
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Applications ⎯ Applications that are described herein for
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NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
2004 Mar 15
5
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
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Printed in The Netherlands
R75/04/pp6
Date of release: 2004 Mar 15
Document order number: 9397 750 12914