PHILIPS BF992

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D071
BF992
Silicon N-channel dual gate
MOS-FET
Product specification
Supersedes data of 1996 Jul 30
1999 Aug 11
Philips Semiconductors
Product specification
Silicon N-channel dual gate MOS-FET
APPLICATIONS
BF992
PINNING
• VHF applications such as VHF television tuners and FM
tuners with 12 V supply voltage. The device is also
suitable for use in professional communications
equipment.
DESCRIPTION
Depletion type field-effect transistor in a plastic
micro-miniature SOT143B package with source and
substrate interconnected.
PIN
SYMBOL
DESCRIPTION
1
s, b
2
d
drain
3
g2
gate 2
4
g1
gate 1
source
d
handbook, halfpage
4
3
The transistor is protected against excessive input voltage
surges by integrated back-to-back diodes between gates
and source.
g2
g1
CAUTION
1
The device is supplied in an antistatic package.
The gate-source input must be protected against static
discharge during transport or handling.
2
s,b
Top view
MAM039
Marking code: M92.
Fig.1
Simplified outline (SOT143B) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
VDS
drain-source voltage (DC)
−
20
V
ID
drain current (DC)
−
40
mA
Ptot
total power dissipation
Tamb = 60 °C
−
200
mW
Yfs
forward transfer admittance
f = 1 kHz; ID = 15 mA; VDS = 10 V;
VG2-S = 4 V
25
−
mS
Cig1-s
input capacitance at gate 1
f = 1 MHz; ID = 15 mA; VDS = 10 V;
VG2-S = 4 V
4
−
pF
Crs
reverse transfer capacitance
f = 1 MHz; ID = 15 mA; VDS = 10 V;
VG2-S = 4 V
30
−
fF
F
noise figure
GS = 2 mS; ID = 15 mA; VDS = 10 V;
VG2-S = 4 V; f = 200 MHz
1.2
−
dB
Tj
operating junction temperature
−
150
°C
1999 Aug 11
2
Philips Semiconductors
Product specification
Silicon N-channel dual gate MOS-FET
BF992
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage
−
20
V
ID
drain current
−
40
mA
IG1
gate 1 current
−
±10
mA
IG2
gate 2 current
−
±10
mA
Ptot
total power dissipation
−
200
mW
Tstg
storage temperature
−65
+150
°C
Tj
operating junction temperature
−
150
°C
Tamb ≤ 60 °C; see Fig.2; note 1
Note
1. Device mounted on a ceramic substrate, 8 mm × 10 mm × 0.7 mm.
MBL033
handbook, halfpage
200
Ptot max
(mW)
100
0
0
100
Tamb (o C)
200
Fig.2 Power derating curves.
1999 Aug 11
3
Philips Semiconductors
Product specification
Silicon N-channel dual gate MOS-FET
BF992
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
CONDITIONS
thermal resistance from junction to ambient in free air
VALUE
UNIT
460
K/W
note 1
Note
1. Device mounted on a ceramic substrate, 8 mm × 10 mm × 0.7 mm.
STATIC CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
±V(BR)G1-SS gate 1-source breakdown voltage
VG2-S = VDS = 0; IG1-SS = ±10 mA
8
20
V
±V(BR)G2-SS gate 2-source breakdown voltage
VG1-S = VDS = 0; IG2-SS = ±10 mA
8
20
V
−V(P)G1-S
gate 1-source cut-off voltage
VG2-S = 4 V; VDS = 10 V; ID = 20 µA
0.2
1.3
V
−V(P)G2-S
gate 2-source cut-off voltage
VG1-S = 0; VDS = 10 V; ID = 20 µA
0.2
1.1
V
±IG1-SS
gate 1 cut-off current
VG2-S = VDS = 0; VG1-S = ±7 V
−
25
nA
±IG2-SS
gate 2 cut-off current
VG1-S = VDS = 0; VG2-S = ±7 V
−
25
nA
DYNAMIC CHARACTERISTICS
Common source; Tamb = 25 °C; VDS = 10 V; VG2-S = 4 V; ID = 15 mA; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
yfs
forward transfer admittance
20
25
−
mS
Cig1-s
input capacitance at gate 1
f = 1 MHz
−
4
−
pF
Cig2-s
input capacitance at gate 2
f = 1 MHz
−
1.7
−
pF
Cos
output capacitance
f = 1 MHz
−
2
−
pF
Crs
reverse transfer capacitance
f = 1 MHz
−
30
40
fF
F
noise figure
f = 200 MHz; GS = 2 mS
−
1.2
−
dB
1999 Aug 11
4
Philips Semiconductors
Product specification
Silicon N-channel dual gate MOS-FET
MGE797
24
BF992
MGE799
30
handbook,
halfpage
I
handbook, halfpage
D
(mA)
20
ID
(mA)
VG1-S = 0.2 V
0.1 V
16
4V3V
VG2-S = 5 V
20
0V
12
2V
1V
−0.1 V
−0.2 V
8
10
−0.3 V
0V
−0.4 V
−0.5 V
4
−0.6 V
0
−1
0
0
2
4
6
8
10
VDS (V)
12
VG2-S = 4 V; Tj = 25 °C.
0
VG1-S (V)
1
VDS = 10 V; Tj = 25 °C.
Fig.3 Output characteristics; typical values.
Fig.4 Transfer characteristics; typical values.
MGE798
30
MGE800
30
handbook, halfpage
handbook, halfpage
5V
4V
3V
|yfs|
(mS)
Yfs
(mS)
VG2-S =
5V
4V
2V
20
20
3V
10
10
2V
1V
VG2-S = 0 V
1V
0
0
10
ID (mA)
0
−1
20
VDS = 10 V; Tj = 25 °C.
Fig.5
VG1-S (V)
1
VDS = 10 V; Tj = 25 °C.
Forward transfer admittance as a function
of drain current; typical values.
1999 Aug 11
0V
0
Fig.6
5
Forward transfer admittance as a function
of gate 1-source voltage; typical values.
Philips Semiconductors
Product specification
Silicon N-channel dual gate MOS-FET
BF992
MGE794
102
handbook, halfpage
MGE793
10
handbook, halfpage
yis
(mS)
yos
(mS)
bos
10
bis
1
1
gis
gos
10−1
10−1
10−2
10
102
f (MHz)
10−2
103
10
102
VDS = 10 V; VG2-S = 4 V; ID = 15 mA; Tamb = 25 °C.
VDS = 10 V; VG2-S = 4 V; ID = 15 mA; Tamb = 25 °C.
Fig.7
Fig.8
Input admittance as a function of frequency;
typical values.
MGE795
25
handbook, halfpage
Output admittance as a function of
frequency; typical values.
MGE796
120
handbook, halfpage
gfs
Yfs
(mS)
20
103
f (MHz)
yrs
(µS)
80
15
−brs
10
−bfs
40
5
grs
0
10
102
f (MHz)
0
103
10
102
103
f (MHz)
VDS = 10 V; VG2-S = 4 V; ID = 15 mA; Tamb = 25 °C.
VDS = 10 V; VG2-S = 4 V; ID = 15 mA; Tamb = 25 °C.
Fig.9
Fig.10 Reverse transfer admittance as a function
of frequency; typical values.
Forward transfer admittance as a function
of frequency; typical values.
1999 Aug 11
6
Philips Semiconductors
Product specification
Silicon N-channel dual gate MOS-FET
BF992
PACKAGE OUTLINE
Plastic surface mounted package; 4 leads
SOT143B
D
B
E
A
X
y
HE
v M A
e
bp
w M B
4
3
Q
A
A1
c
1
2
Lp
b1
e1
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
b1
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.1
0.9
0.1
0.48
0.38
0.88
0.78
0.15
0.09
3.0
2.8
1.4
1.2
1.9
1.7
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
97-02-28
SOT143B
1999 Aug 11
EUROPEAN
PROJECTION
7
Philips Semiconductors
Product specification
Silicon N-channel dual gate MOS-FET
BF992
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Aug 11
8
Philips Semiconductors
Product specification
Silicon N-channel dual gate MOS-FET
NOTES
1999 Aug 11
9
BF992
Philips Semiconductors
Product specification
Silicon N-channel dual gate MOS-FET
NOTES
1999 Aug 11
10
BF992
Philips Semiconductors
Product specification
Silicon N-channel dual gate MOS-FET
NOTES
1999 Aug 11
11
BF992
Philips Semiconductors – a worldwide company
Argentina: see South America
Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140,
Tel. +61 2 9704 8141, Fax. +61 2 9704 8139
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213,
Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,
220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773
Belgium: see The Netherlands
Brazil: see South America
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,
51 James Bourchier Blvd., 1407 SOFIA,
Tel. +359 2 68 9211, Fax. +359 2 68 9102
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. +1 800 234 7381, Fax. +1 800 943 0087
China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. +852 2319 7888, Fax. +852 2319 7700
Colombia: see South America
Czech Republic: see Austria
Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V,
Tel. +45 33 29 3333, Fax. +45 33 29 3905
Finland: Sinikalliontie 3, FIN-02630 ESPOO,
Tel. +358 9 615 800, Fax. +358 9 6158 0920
France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,
Tel. +33 1 4099 6161, Fax. +33 1 4099 6427
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,
Tel. +49 40 2353 60, Fax. +49 40 2353 6300
Hungary: see Austria
India: Philips INDIA Ltd, Band Box Building, 2nd floor,
254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. +91 22 493 8541, Fax. +91 22 493 0966
Indonesia: PT Philips Development Corporation, Semiconductors Division,
Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,
Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007
Italy: PHILIPS SEMICONDUCTORS, Via Casati, 23 - 20052 MONZA (MI),
Tel. +39 039 203 6838, Fax +39 039 203 6800
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,
TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5057
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087
Middle East: see Italy
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. +31 40 27 82785, Fax. +31 40 27 88399
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Tel. +64 9 849 4160, Fax. +64 9 849 7811
Norway: Box 1, Manglerud 0612, OSLO,
Tel. +47 22 74 8000, Fax. +47 22 74 8341
Pakistan: see Singapore
Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
Tel. +48 22 612 2831, Fax. +48 22 612 2327
Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 755 6918, Fax. +7 095 755 6919
Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,
Tel. +65 350 2538, Fax. +65 251 6500
Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 58088 Newville 2114,
Tel. +27 11 471 5401, Fax. +27 11 471 5398
South America: Al. Vicente Pinzon, 173, 6th floor,
04547-130 SÃO PAULO, SP, Brazil,
Tel. +55 11 821 2333, Fax. +55 11 821 2382
Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 93 301 6312, Fax. +34 93 301 4107
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 5985 2000, Fax. +46 8 5985 2745
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2741 Fax. +41 1 488 3263
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2886, Fax. +886 2 2134 2874
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye,
ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 208 730 5000, Fax. +44 208 754 8421
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381, Fax. +1 800 943 0087
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 62 5344, Fax.+381 11 63 5777
For all other countries apply to: Philips Semiconductors,
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
Internet: http://www.semiconductors.philips.com
© Philips Electronics N.V. 1999
SCA 67
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
125004/03/pp12
Date of release: 1999
Aug 11
Document order number:
9397 750 06013