Si4946BEY Vishay Siliconix New Product Dual N-Channel 60-V (D-S) 175 _C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) ID (A) 0.041 @ VGS = 10 V 6.5 0.052 @ VGS = 4.5 V 5.8 Qg (Typ) 9 2 nC 9.2 D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D 100% Rg Tested SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 D1 D2 G1 G2 Top View Ordering Information: Si4946BEY-T1—E3 (Lead (Pb)-Free) S1 S2 N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Symbol Limit Drain-Source Voltage Parameter VDS 60 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 150_C) TA = 25_C 5.5 ID 5.3a, b 4.4a, b TA = 70_C Pulsed Drain Current IDM Continuous Source-Drain Source Drain Diode Current Avalanche Current TC = 25_C TA = 25_C L = 0.1 0 1 mH Single-Pulse Avalanche Energy TC = 70_C TA = 25_C 3.1 IS 2a, b IAS 12 EAS 7.2 mJ 3.7 2.6 PD W 2.4a, b 1.7a, b TA = 70_C Operating Junction and Storage Temperature Range A 30 TC = 25_C Maximum Power Dissipation V 6.5 TC = 25_C TC = 70_C Unit TJ, Tstg −50 to 175 _C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Maximum Junction-to-Ambienta, c t p 10 sec RthJA 50 62.5 Maximum Junction-to-Foot (Drain) Steady State RthJF 33 41 Unit _C/W Notes: a. Surface Mounted on 1” x 1” FR4 Board. b. t = 10 sec c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. d. Maximum under steady state conditions is 110 _C/W. Document Number: 73411 S-51013—Rev. A, 23-May-05 www.vishay.com 1 Si4946BEY Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VDS VGS = 0 V, ID = 250 mA 60 Typ Max Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient DVDS/TJ DVGS(th)/TJ Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA Gate-Source Leakage IGSS VDS = 0 V, VGS = "20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea rDS(on) Forward Transconductancea gfs 53 ID = 250 mA VGS(th) Temperature Coefficient V mV/_C −6.7 1.0 2.4 3.0 V "100 nA VDS = 60 V, VGS = 0 V 1 VDS = 60 V, VGS = 0 V, TJ = 55_C 10 VDS w 5 V, VGS = 10 V 30 mA A VGS = 10 V, ID = 5.3 A 0.033 0.041 VGS = 4.5 V, ID = 4.7 A 0.041 0.052 VDS = 15 V, ID = 5.3 A 24 W S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Rg 840 VDS = 30 V, VGS = 0 V, f = 1 MHz td(off) pF 44 VDS = 30 V, VGS = 10 V, ID = 5.3 A VDS = 30 V, VGS = 5 V, ID= 5.3 A 17 25 9.2 12 3.3 f = 1 MHz VDD = 30 V, RL = 6.8 W ID ^ 4.4 A, VGEN = 4.5 V, Rg = 1 W 3.1 6.5 9.5 20 30 120 180 20 30 tf 30 45 td(on) 10 15 12 20 25 40 10 15 tr td(off) nC 3.7 td(on) tr 71 VDD = 30 V, RL = 6.8 W ID ^ 4.4 A, VGEN = 10 V, Rg = 1 W tf W ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Currenta ISM Body Diode Voltage VSD TC = 25_C 3.1 30 IS = 2 A 0.8 1.2 V 25 50 ns 25 50 nC Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta 18 Reverse Recovery Rise Time tb 7 IF = 4.4 A, di/dt = 100 A/ms, TJ = 25_C 25 C A ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73411 S-51013—Rev. A, 23-May-05 Si4946BEY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 30 I D − Drain Current (A) VGS = 10 thru 5 V 25 I D − Drain Current (A) Transfer Characteristics 10 20 4V 15 10 8 6 4 TC = 150_C −55_C 25_C 2 5 3V 0 0.0 0.5 1.0 1.5 2.0 2.5 0 0.0 3.0 0.5 1.0 VDS − Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage 2.5 3.0 3.5 4.0 Capacitance 1200 1000 0.080 C − Capacitance (pF) rDS(on) − On-Resistance (mW) 2.0 VGS − Gate-to-Source Voltage (V) 0.100 0.060 VGS = 4.5 V 0.040 VGS = 10 V 0.020 Ciss 800 600 400 200 0.000 Coss Crss 0 0 5 10 15 20 25 30 0 10 ID − Drain Current (A) 2.2 2.0 ID = 5.3 A rDS(on) − On-Resiistance (Normalized) 8 VDS = 30 V 6 20 30 40 50 60 VDS − Drain-to-Source Voltage (V) Gate Charge 10 V GS − Gate-to-Source Voltage (V) 1.5 VDS = 48 V 4 2 On-Resistance vs. Junction Temperature ID = 5.3 A 1.8 VGS = 10 V 1.6 1.4 VGS = 4.5 V 1.2 1.0 0.8 0 0 4 8 12 Qg − Total Gate Charge (nC) Document Number: 73411 S-51013—Rev. A, 23-May-05 16 20 0.6 −50 −25 0 25 50 75 100 125 150 175 TJ − Junction Temperature (_C) www.vishay.com 3 Si4946BEY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.10 rDS(on) − Drain-to-Source On-Resistance (W) I S − Source Current (A) 30 TJ = 175_C 10 TJ = 25_C 0.08 TJ = 150_C 0.06 0.04 TJ = 25_C 0.02 0.00 1 0.00 ID = 5.3 A 0.2 0.4 0.6 0.8 1.0 1.2 0 1.4 VSD − Source-to-Drain Voltage (V) 2 4 6 8 10 VGS − Gate-to-Source Voltage (V) Threshold Voltage Single Pulse Power, Junction-to-Ambient 3.0 25 2.8 20 2.6 ID = 250 mA Power (W) VGS(th) (V) 2.4 2.2 2.0 15 10 1.8 1.6 5 1.4 1.2 −50 −25 0 25 50 75 100 125 150 0 0.01 175 0.1 1 TJ − Temperature (_C) 10 100 1000 Time (sec) 100 I D − Drain Current (A) 10 Safe Operating Area, Junction-to-Ambient *Limited by rDS(on) 100 ms 1 1 ms 10 ms 100 ms 0.1 TA = 25_C Single Pulse 1s 10 s dc 0.01 0.01 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) *VGS u minimum VGS at which rDS(on) is specified www.vishay.com 4 Document Number: 73411 S-51013—Rev. A, 23-May-05 Si4946BEY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Current De-Rating* Power, Junction-to-Case 4.0 7 3.5 6 3.0 5 Power (W) ID − Drain Current (A) 8 4 2.5 2.0 3 1.5 2 1.0 1 0.5 0 0.0 0 25 50 75 100 125 150 175 25 50 TC − Case Temperature (_C) IC − Peak Avalanche Current (A) 100 75 100 125 150 175 TC − Case Temperature (_C) Single Pulse Avalanche Capability 10 TA + L @ ID BV * V DD 1 0.000001 0.00001 0.0001 0.001 TA − Time In Avalanche (sec) *The power dissipation PD is based on TJ(max) = 175_C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 73411 S-51013—Rev. A, 23-May-05 www.vishay.com 5 Si4946BEY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 85_C/W 0.02 3. TJM − TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10−4 10−3 10−1 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 10−2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 Single Pulse 0.02 0.01 10−4 10−3 10−2 Square Wave Pulse Duration (sec) 10−1 1 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73411. www.vishay.com 6 Document Number: 73411 S-51013—Rev. A, 23-May-05 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1