VISHAY SI2307CDS-T1-GE3

New Product
Si2307CDS
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
RDS(on) (Ω)
ID (A)a, b
0.088 at VGS = - 10 V
- 2.7
0.138 at VGS = - 4.5 V
- 2.2
VDS (V)
- 30
Qg (Typ.)
APPLICATIONS
COMPLIANT
• Load Switch for Portable Devices
1
3
S
RoHS
4.1 nC
TO-236
(SOT-23)
G
• Halogen-free Option Available
• TrenchFET® Power MOSFET
D
S
2
G
Top View
Si2307CDS (N7)*
* Marking Code
D
Ordering Information: Si2307CDS-T1-E3 (Lead (Pb)-free)
Si2307CDS-T1-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
- 30
Gate-Source Voltage
VGS
± 20
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)a, b
TC = 70 °C
TA = 25 °C
Continuous Source-Drain Diode Currenta, b
- 2.8
ID
- 2.7a, b
- 2.2a, b
IDM
Maximum Power Dissipationa, b
TC = 25 °C
TA = 25 °C
- 1.5
IS
- 0.91a, b
1.8
TC = 70 °C
1.14
PD
Soldering Recommendations (Peak
W
1.1a, b
0.7a, b
TA = 70 °C
TJ, Tstg
Operating Junction and Storage Temperature Range
A
- 12
TC = 25 °C
TA = 25 °C
V
- 3.5
TA = 70 °C
Pulsed Drain Current (10 µs Pulse Width)
Unit
- 55 to 150
Temperature)c
°C
260
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Maximum Junction-to-Ambienta, c
t≤5s
RthJA
90
115
Maximum Junction-to-Foot (Drain)
Steady State
RthJF
55
70
Unit
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 5 s.
c. Maximum under Steady State conditions is 166 °C/W.
Document Number: 68768
S-81580-Rev. A, 07-Jul-08
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New Product
Si2307CDS
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = - 250 µA
- 30
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
ΔVDS/TJ
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
Gate-Source Threshold Voltage
ID = - 250 µA
VGS(th)
VDS = VGS, ID = - 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
gfs
mV/°C
4.5
-1
-3
V
- 100
nA
VDS = - 30 V, VGS = 0 V
-1
VDS = - 30 V, VGS = 0 V, TJ = 55 °C
- 10
VDS ≤ 5 V, VGS = - 10 V
RDS(on)
V
- 32
-6
µA
A
VGS = - 10 V, ID = - 3.5 A
0.073
0.088
VGS = - 4.5 V, ID = - 2.5 A
0.110
0.138
VDS = - 10 V, ID = - 3.5 A
7
Ω
S
b
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
51
Total Gate Charge
Qg
4.1
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
340
VDS = - 15 V, VGS = 0 V, f = 1 MHz
VDS = - 15 V, VGS = - 4.5 V, ID = - 2.5 A
pF
67
6.2
1.3
nC
1.8
f = 1 MHz
td(on)
VDD = - 15 V, RL = 15 Ω
ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 1 Ω
tr
td(off)
Ω
10
40
60
40
60
20
40
tf
17
30
td(on)
5.5
10
13
25
17
30
7.7
15
VDD = - 15 V, RL = 15 Ω
ID ≅ - 1 A, VGEN = - 10 V, Rg = 1 Ω
tr
td(off)
tf
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
TC = 25 °C
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
- 1.5
- 12
IS = - 0.75 A, VGS = 0 V
IF = - 2.5 A, dI/dt = 100 A/µs, TJ = 25 °C
A
- 0.8
- 1.2
V
17
30
ns
11
20
nC
12
5
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 68768
S-81580-Rev. A, 07-Jul-08
New Product
Si2307CDS
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
12
2.0
VGS = 10 thru 6 V
VGS = 5 V
VGS = 4 V
I D - Drain Current (A)
I D - Drain Current (A)
10
8
6
4
1.0
TC = 25 °C
0.5
VGS = 3 V
2
1.5
TC = 125 °C
TC = - 55 °C
VGS = 2 V
0
0.0
0.5
1.0
1.5
0.0
1.0
2.0
1.5
VDS - Drain-to-Source Voltage (V)
2.0
3.0
3.5
4.0
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.20
600
0.15
450
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
2.5
VGS = 4.5 V
0.10
VGS = 10 V
Ciss
300
150
0.05
Coss
Crss
0
0.00
0
3
6
9
0
12
6
12
24
30
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
10
1.8
ID = 2.5 A
ID = 3.2 A
VDS = 15 V
VGS = 10 V
1.6
8
VDS = 7.5 V
6
VDS = 22.5 V
4
2
1.4
(Normalized)
R DS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
18
VGS = 4.5 V
1.2
1.0
0.8
0
0
2
4
6
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 68768
S-81580-Rev. A, 07-Jul-08
8
0.6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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New Product
Si2307CDS
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
0.4
ID = 3.5 A
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
TJ = 25 °C
1
TJ = 150 °C
0.1
TJ = - 50 °C
0.01
0.3
0.2
TJ = 125 °C
0.1
TJ = 25 °C
0.001
0.0
0.0
0.3
0.6
0.9
1.2
1.5
0
2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
6
8
10
On-Resistance vs. Gate-to-Source Voltage
10
0.6
8
0.4
ID = 250 µA
ID = 1 mA
0.2
Power (W)
VGS(th) Variance (V)
4
VGS - Gate-to-Source Voltage (V)
0.0
6
4
-0.2
-0.4
- 50
TA = 25 °C
2
- 25
0
25
50
75
100
125
0
0.01
150
0.1
1
10
100
TJ - Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
1000
100
Limited by RDS(on)*
100 µs
I D - Drain Current (A)
10
1 ms
1
10 ms
0.1
100 ms
TA = 25 °C
Single Pulse
BVDSS Limited
0.01
0.1
1
10
1 s, 10 s
100 s, DC
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
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Document Number: 68768
S-81580-Rev. A, 07-Jul-08
New Product
Si2307CDS
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
100
10
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
PDM
0.05
t1
0.02
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJF = 70 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?68768.
Document Number: 68768
S-81580-Rev. A, 07-Jul-08
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Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
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information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
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document or by any conduct of Vishay.
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Document Number: 91000
Revision: 18-Jul-08
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