I27139- 01/03
FC40SA50FK
Applications
! Switch Mode Power Supply (SMPS)
! Uninterruptible Power Supply
! High Speed Power Switching
! Hard Switched and High Frequency Circuits
HEXFET® Power MOSFET
VDSS
RDS(on) typ.
ID
0.084 Ω
40A
500V
Benefits
! Low Gate Charge Qg results in Simple
Drive Requirement
! Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
! Fully Characterized Capacitance and
Avalanche Voltage and Current
! Low RDS(on)
! Fully Insulated Package
SOT-227
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current "
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt #
Operating Junction and
Storage Temperature Range
Max.
Units
40
26
160
430
3.45
± 30
9.0
-55 to + 150
A
W
W/°C
V
V/ns
°C
Avalanche Characteristics
Symbol
EAS
IAR
EAR
Parameter
Single Pulse Avalanche Energy$
Avalanche Current"
Repetitive Avalanche Energy"
Typ.
Max.
Units
–
–
–
1240
40
43
mJ
A
mJ
Typ.
Max.
Units
–
0.05
0.29
–
°C/W
Thermal Resistance
Symbol
RθJC
RθCS
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Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
1
I27139- 01/03
FC40SA50FK
Static @ TJ = 25°C (unless otherwise specified)
Symbol
V(BR)DSS
RDS(on)
VGS(th)
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
∆V(BR)DSS/∆TJ
Min. Typ. Max. Units
Conditions
500
–
–
V
VGS = 0V, ID = 250µA
–
0.60
–
V/°C Reference to 25°C, ID = 1mA(
–
0.084 0.10
Ω
VGS = 10V, ID = 24A %
3.0
–
5.0
V
VDS = VGS, ID = 250µA
–
–
50
VDS = 500V, VGS = 0V
µA
–
–
250
VDS = 400V, VGS = 0V, TJ = 125°C
–
–
250
VGS = 30V
nA
–
–
-250
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min. Typ. Max. Units
Conditions
23
–
–
S
VDS = 50V, ID = 28A
–
–
270
ID = 40A
–
–
84
nC
VDS = 400V
–
–
130
VGS = 10V, See Fig. 6 and 13 %
–
25
–
VDD = 250V
–
140
–
I
D = 40A
ns
–
55
–
RG = 1.0Ω
–
74
–
VGS = 10V,See Fig. 10 %
–
8310 –
VGS = 0V
–
960
–
VDS = 25V
–
120
–
pF
ƒ = 1.0MHz, See Fig. 5
–
10170 –
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
–
240
–
VGS = 0V, VDS = 480V, ƒ = 1.0MHz
–
440
–
VGS = 0V, VDS = 0V to 480V '
Diode Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) "
Min. Typ. Max. Units
Conditions
–
–
40
MOSFET symbol
showing the
A
–
–
160
integral reverse
p-n junction diode.
VSD
Diode Forward Voltage
–
–
1
trr
Reverse Recovery Time
–
620
940
Qrr
Reverse Recovery Charge
–
14
21
38
-
V
ns
µC
A
D
G
S
TJ = 25°C, IS = 40A, VGS = 0V %
TJ = 25°C, IF = 47A
di/dt = 100A/µs %
IRRM
Reverse Recovery Current
–
TJ = 25°C
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
" Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11)
$ Starting TJ = 25°C, L = 1.55mH, RG = 25Ω,
IAS = 40A, dv/dt =5.5V/ns (See Figure 12a)
% Pulse width ≤ 300µs; duty cycle ≤ 2%.
' Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
# ISD ≤ 40A, di/dt ≤ 150A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
2
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I27139- 01/03
FC40SA50FK
1000
1000
V GS
VGS
15
10
8.0
7.0
6.0
5.5
B O TTO M 5.0
100
10
TO P
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TO P
1
5V
0.1
20 µs PULSE WIDTH
TJ=25°C
0.01
15
10
8.0
7.0
6.0
5.5
5.0
B O TTO M 4.5
100
10
4.5 V
1
20 µs PULSE
WIDTH
T 150°C
0.1
0.1
1
10
100
0.1
VDS, Drain-to-Source Voltage (V)
10
100
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
3.5
100
RDS(on), Drain-to-Source On Resistance
(Normalized)
1000
ID, Drain-to-Source Current (A)
1
VDS, Drain-to-Source Voltage (V)
TJ =150°C
10
TJ =25°C
1
V DS =20V
20µs PULSE WIDTH
3.0
ID=24A
2.5
2.0
1.5
1.0
V GS =10V
0.5
0.0
0.1
4
5
6
7
8
9
10
11
V GS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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12
-60 -40 -20
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
I27139- 01/03
FC40SA50FK
20
100000
C, Capacitance(pF)
10000
= 0V,
f = 1 MHZ
= Cgs + C gd, Cds SHORTED
=C
gd
= Cds + C gd
ID =40A
VGS, Gate-to-Source Voltage (V)
VGS
Ciss
C
rss
Coss
Ciss
1000
Coss
100
Crss
15
10
5
0
10
1
10
100
0
1000
VDS, Drain-to-Source Voltage (V)
200
300
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
1000
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100
ID, Drain Current (A)
ISD, Reverse Drain Current (A)
100
TJ=150°C
10
TJ=25°C
100
100us
10
1
VGS=0
10ms
1
0.1
0.2
0.7
1.2
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1ms
TC = 25°C
TJ = 150°C
Single Pulse
1.7
10
100
1000
V DS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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I27139- 01/03
FC40SA50FK
40
RD
VDS
ID, Drain Current (A)
VGS
D.U.T.
30
RG
20
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+
-VDD
10V
Fig 10a. Switching Time Test Circuit
10
VDS
90%
0
25
50
75
100
125
150
TC, Case Temperature (°C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response ( ZthJC
1.000
D = 0.50
0.30
0.100
τJ
0.10
0.05
0.010
0.02
0.01
0.001
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
R1
R1
τJ
τ1
τ1
R2
R2
τ2
Ci= τi/Ri
Ci i/Ri
R3
R3
τC
τ
τ2
τ3
τ3
Ri (°C/W)
0.161
τi (sec)
0.000759
0.210
0.017991
0.147
0.06094
Notes:
1. Duty factor D = t1/t2
2. Peak TJ=PDM x ZthJC + TC
0.01
0.1
1
t1, Rectangular Pulse Duration (s)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
I27139- 01/03
FC40SA50FK
EAS, Single Pulse Avalanche Energy (mJ)
3000
ID ...
18A
26A
40A
TOP
2500
BOTTOM
15V
2000
DRIVER
L
VDS
1500
D.U.T
RG
1000
+
V
- DD
IAS
20V
0.01Ω
tp
500
A
Fig 12c. Unclamped Inductive Test Circuit
0
25
50
75
100
125
150
S tarting TJ, Junction Tem perature (°C)
Fig 12a. Maximum Avalanche Energy
Vs. Drain Current
V(BR)DSS
tp
I AS
Fig 12d. Unclamped Inductive Waveforms
R
L
QG
+
D.U .T.
VG S
V DS
-
VGS V
QGS
1m A
QGD
ID
VG
Charge
Fig 13a. Gate Charge Test Circuit
6
Fig 13b. Basic Gate Charge Waveform
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I27139- 01/03
FC40SA50FK
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
#
+
$
-
-
%
+
"
•
•
•
•
RG
Driver Gate Drive
P.W.
+
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Period
D=
-
VDD
P.W.
Period
VGS=10V
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFET® Power MOSFETs
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7
I27139- 01/03
FC40SA50FK
SOT-227 Package Details
38.30 ( 1.508 )
37.80 ( 1.488 )
4.40 (.173 )
4.20 (.165 )
CHAMFER
2.00 ( .079 ) X 457
-A4
LEAD ASSIGMENTS
E
C
S
3
6.25 ( .246 )
12.50 ( .492 )
1
D
4
1
25.70 ( 1.012 )
25.20 ( .992 )
E G
IGBT
-B-
A1 K2
4
Note :
1
2
R FULL
7.50 ( .295 )
3
2
AUX-S
S G
HEXFET
HEXFET
3
2
AUX-S is a low current input
K1 A2
intended for driving purpose only
HEXFRED
15.00 ( .590 )
30.20 ( 1.189 )
29.80 ( 1.173 )
4X
2.10 ( .082 )
1.90 ( .075 )
8.10 ( .319 )
7.70 ( .303 )
0.25 ( .010 ) M C A M B M
2.10 ( .082 )
1.90 ( .075 )
12.30 ( .484 )
11.80 ( .464 )
-C0.12 ( .005 )
QUANTITY PER TUBE IS 10
M4 SREW AND WASHER INCLUDED
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial
Level.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.01/02
8
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