PHILIPS BCY79

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D125
BCY78; BCY79
PNP switching transistors
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 Jun 18
Philips Semiconductors
Product specification
PNP switching transistors
BCY78; BCY79
FEATURES
PINNING
• Low current (max. 100 mA)
PIN
• Low voltage (max. 45 V).
APPLICATIONS
DESCRIPTION
1
emitter
2
base
3
collector, connected to case
• Switching and amplification.
DESCRIPTION
3
1
handbook, halfpage
2
PNP switching transistor in a TO-18 metal package.
NPN complements: BCY58 and BCY59.
2
3
MAM263
1
Fig.1 Simplified outline (TO-18) and symbol.
QUICK REFERENCE DATA
SYMBOL
VCBO
PARAMETER
collector-base voltage
CONDITIONS
−32
V
−
−45
V
BCY78
−
−32
V
BCY79
−
−45
V
collector-emitter voltage
open base
−
−100
mA
Tamb ≤ 45 °C
−
340
mW
Tcase ≤ 45 °C
−
1
W
BCY78/VII; BCY79/VII
120
220
BCY78/VIII; BCY79/VIII
180
310
IC
collector current (DC)
Ptot
total power dissipation
DC current gain
IC = −2 mA; VCE = −5 V
BCY78/IX; BCY79/IX
250
460
BCY78/X
380
630
100
−
MHz
400
ns
fT
transition frequency
IC = −10 mA; VCE = −5 V
toff
turn-off time
ICon = −100 mA; IBon = −10 mA; IBoff = 10 mA −
1997 Jun 18
UNIT
−
BCY79
hFE
MAX.
open emitter
BCY78
VCEO
MIN.
2
Philips Semiconductors
Product specification
PNP switching transistors
BCY78; BCY79
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO
VCEO
PARAMETER
collector-base voltage
CONDITIONS
MIN.
MAX.
UNIT
open emitter
BCY78
−
−32
V
BCY79
−
−45
V
BCY78
−
−32
V
BCY79
−
−45
V
−5
V
collector-emitter voltage
open base
VEBO
emitter-base voltage
IC
collector current (DC)
−
−100
mA
ICM
peak collector current
−
−200
mA
IBM
peak base current
−
−200
mA
Ptot
total power dissipation
Tamb ≤ 45 °C
−
340
mW
Tcase ≤ 45 °C
−
1
W
open collector
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
200
°C
Tamb
operating ambient temperature
−65
+150
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Rth j-c
thermal resistance from junction to case
1997 Jun 18
CONDITIONS
in free air
3
VALUE
UNIT
450
K/W
150
K/W
Philips Semiconductors
Product specification
PNP switching transistors
BCY78; BCY79
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
−
−2
−15
nA
−
−
−10
µA
IE = 0; VCB = −45 V
−
−2
−15
nA
IE = 0; VCB = −45 V; Tamb = 150 °C
−
−
−10
µA
−
−
−20
nA
BCY78/VII; BCY79/VII
−
140
−
BCY78/VIII; BCY79/VIII
30
200
−
IC = 0; VEB = −5 V
hFE
DC current gain
IC = −10 µA; VCE = −5 V
VCEsat
UNIT
IE = 0; VCB = −32 V; Tamb = 150 °C
emitter cut-off current
hFE
MAX.
IE = 0; VCB = −32 V
IEBO
hFE
TYP.
collector cut-off current
BCY79
hFE
MIN.
collector cut-off current
BCY78
ICBO
CONDITIONS
BCY78/IX; BCY79/IX
40
270
−
BCY78/X
100
340
−
BCY78/VII; BCY79/VII
120
170
220
BCY78/VIII; BCY79/VIII
180
250
310
BCY78/IX; BCY79/IX
250
350
460
BCY78/X
380
500
630
BCY78/VII; BCY79/VII
80
180
−
BCY78/VIII; BCY79/VIII
120
260
400
DC current gain
DC current gain
IC = −2 mA; VCE = −5 V
IC = −10 mA; VCE = −1 V
BCY78/IX; BCY79/IX
160
360
630
BCY78/X
240
500
1000
BCY78/VII; BCY79/VII
40
−
−
BCY78/VIII; BCY79/VIII
45
−
−
BCY78/IX; BCY79/IX
60
−
−
BCY78/X
60
−
−
−
−120
−250
mV
IC = −100 mA; IB = −2.5 mA
−
−400
−800
mV
IC = −10 mA; IB = −250 µA
−600
−700
−850
mV
IC = −100 mA; IB = −2.5 mA
−700
−850
−1200 mV
IC = −10 µA; VCE = −5 V
−
−550
−
mV
IC = −2 mA; VCE = −5 V
−600
−650
−750
mV
DC current gain
IC = −100 mA; VCE = −1 V
collector-emitter saturation voltage IC = −10 mA; IB = −250 µA
VBEsat
base-emitter saturation voltage
VBE
base-emitter voltage
IC = −10 mA; VCE = −1 V
−
−650
−
mV
IC = −100 mA; VCE = −1 V
−
−750
−
mV
Cc
collector capacitance
IE = ie = 0; VCB = −10 V; f = 1 MHz
−
−
7
pF
Ce
emitter capacitance
IC = ic = 0; VEB = −500 mV; f = 1 MHz
−
−
15
pF
fT
transition frequency
IC = −10 mA; VCE = −5 V; f = 100 MHz 100
−
−
MHz
1997 Jun 18
4
Philips Semiconductors
Product specification
PNP switching transistors
SYMBOL
F
BCY78; BCY79
PARAMETER
CONDITIONS
IC = −200 µA; VCE = −5 V; RS = 2 kΩ;
f = 1 kHz; B = 200 Hz
noise figure
MIN.
TYP.
MAX.
UNIT
−
−
10
dB
−
−
100
ns
−
−
50
ns
Switching times (between 10% and 90% levels); see Fig.2
ICon = −10 mA; IBon = −1 mA;
IBoff = 1 mA; test conditions A
ton
turn-on time
td
delay time
tr
rise time
−
−
50
ns
toff
turn-off time
−
−
700
ns
ts
storage time
−
−
600
ns
tf
fall time
−
−
100
ns
ton
turn-on time
−
−
100
ns
td
delay time
−
−
35
ns
tr
rise time
−
−
65
ns
toff
turn-off time
−
−
400
ns
ts
storage time
−
−
300
ns
tf
fall time
−
−
100
ns
ICon = −100 mA; IBon = −10 mA;
IBoff = 10 mA; test conditions B
VBB
ndbook, full pagewidth
VCC
RB
RC
Vo
(probe)
oscilloscope
450 Ω
(probe)
450 Ω
oscilloscope
R2
Vi
DUT
R1
MGD624
Test conditions A
Vi = −5 V; T = 500 µs; tp = 10 µs; tr = tf ≤ 3 ns.
R1 = 56 Ω; R2 = 2.5 kΩ; RB = 3.9 kΩ; RC = 270 Ω.
VBB = 1.9 V; VCC = −3 V
Oscilloscope input impedance Zi = 50 Ω.
Test conditions B
Vi = −9.8 V; T = 500 µs; tp = 10 µs; tr = tf ≤ 3 ns.
R1 = 62 Ω; R2 = 470 Ω; RB = 470 Ω; RC = 100 Ω.
VBB = 3.4 V; VCC = −10.8 V
Oscilloscope input impedance Zi = 50 Ω.
Fig.2 Test circuit for switching times.
1997 Jun 18
5
Philips Semiconductors
Product specification
PNP switching transistors
BCY78; BCY79
PACKAGE OUTLINE
Metal-can cylindrical single-ended package; 3 leads
SOT18/13
α
j
seating plane
B
w M A M B M
1
b
k
D1
2
3
a
D
A
A
0
5
L
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
a
b
D
D1
j
k
L
w
α
mm
5.31
4.74
2.54
0.47
0.41
5.45
5.30
4.70
4.55
1.03
0.94
1.1
0.9
15.0
12.7
0.40
45°
REFERENCES
OUTLINE
VERSION
IEC
JEDEC
SOT18/13
B11/C7 type 3
TO-18
1997 Jun 18
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-04-18
6
Philips Semiconductors
Product specification
PNP switching transistors
BCY78; BCY79
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Jun 18
7
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© Philips Electronics N.V. 1997
SCA54
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Printed in The Netherlands
117047/00/02/pp8
Date of release: 1997 Jun 18
Document order number:
9397 750 01405