PHILIPS BFX85

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D111
BFX85
NPN switching transistor
Product specification
Supersedes data of Sepember 1994
File under Discrete Semiconductors, SC04
1997 Apr 22
Philips Semiconductors
Product specification
NPN switching transistor
BFX85
PINNING
FEATURES
• High current (max. 1 A)
PIN
• Low voltage (max. 60 V).
APPLICATIONS
DESCRIPTION
1
emitter
2
base
3
collector, connected to case
• General purpose switching and amplification
• Industrial applications.
1
handbook, halfpage
3
2
DESCRIPTION
2
NPN transistor in a TO-39 metal package.
3
1
MAM317
Fig.1 Simplified outline (TO-39) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
−
100
V
VCEO
collector-emitter voltage
open base
−
−
60
V
IC
collector current (DC)
−
−
1
A
Ptot
total power dissipation
Tamb ≤ 25 °C
−
−
800
mW
Tcase ≤ 100 °C
−
−
2.86
W
hFE
DC current gain
IC = 150 mA; VCE = 10 V
70
142
−
fT
transition frequency
IC = 50 mA; VCE = 10 V; f = 100 MHz
50
−
−
MHz
toff
turn-off time
ICon = 150 mA; IBon = 15 mA; IBoff = −15 mA −
360
−
ns
1997 Apr 22
2
Philips Semiconductors
Product specification
NPN switching transistor
BFX85
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
100
V
VCEO
collector-emitter voltage
open base
−
60
V
VEBO
emitter-base voltage
open collector
−
6
V
IC
collector current (DC)
−
1
A
ICM
peak collector current
−
1
A
IBM
peak base current
−
100
mA
Ptot
total power dissipation
−
800
mW
Tamb ≤ 25 °C
Tcase ≤ 25 °C
−
5
W
25° C ≤ Tcase ≤ 100 °C
−
2.86
W
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
175
°C
Tamb
operating ambient temperature
−65
+150
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient in free air
200
K/W
Rth j-c
thermal resistance from junction to case
35
K/W
1997 Apr 22
3
Philips Semiconductors
Product specification
NPN switching transistor
BFX85
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
ICBO
IEBO
hFE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
CONDITIONS
IE = 0; VCB = 80 V
VBEsat
MAX. UNIT
−
2
50
nA
−
0.1
2.5
µA
IE = 0; VCB = 100 V
−
10
500
nA
IE = 0; VCB = 100 V; Tj = 100 °C
−
0.5
30
µA
IC = 0; VEB = 5 V
−
2
50
nA
IC = 0; VEB = 5 V; Tj = 100 °C
−
0.1
2.5
µA
IC = 0; VEB = 6 V
−
10
500
nA
IC = 10 mA; VCE = 10 V
50
90
−
IC = 150 mA; VCE = 10 V
70
142
−
IC = 500 mA; VCE = 10 V
30
90
−
15
50
−
−
150
200
mV
IC = 150 mA; IB = 15 mA
−
150
350
mV
IC = 500 mA; IB = 50 mA
−
0.35
1
V
collector-emitter saturation voltage IC = 10 mA; IB = 1 mA
base-emitter saturation voltage
TYP.
IE = 0; VCB = 80 V; Tj = 100 °C
IC = 1 A; VCE = 10 V
VCEsat
MIN.
IC = 1 A; IB = 100 mA
−
0.66
1.6
V
IC = 10 mA; IB = 1 mA
−
0.69
1.2
V
IC = 150 mA; IB = 15 mA
−
0.92
1.3
V
IC = 500 mA; IB = 50 mA
−
1.15
1.5
V
IC = 1 A; IB = 100 mA
−
1.4
2
V
Cc
collector capacitance
IE = ie = 0; VCB = 10 V; f = 1 MHz
−
7
12
pF
fT
transition frequency
IC = 50 mA; VCE = 10 V; f = 100 MHz
50
185
−
MHz
−
55
−
ns
Switching Times (between 10% and 90% levels) see Fig.2
ton
turn-on time
ICon = 150 mA; IBon = 15 mA;
IBoff = −15 mA
td
delay time
−
15
−
ns
tr
rise time
−
40
−
ns
toff
turn-off time
−
360
−
ns
ts
storage time
−
300
−
ns
tf
fall time
−
60
−
ns
1997 Apr 22
4
Philips Semiconductors
Product specification
NPN switching transistor
BFX85
VBB
handbook, full pagewidth
RB
VCC
RC
Vo
(probe)
oscilloscope
450 Ω
(probe)
450 Ω
R2
Vi
DUT
R1
MLB826
Vi = 9.5 V; T = 500 µs; tp = 10 µs; tr = tf ≤ 3 ns.
R1 = 68 Ω; R2 = 325 Ω; RB = 325 Ω; RC = 160 Ω.
VBB = −3.5 V; VCC = 29.5 V.
Oscilloscope: input impedance Zi = 50 Ω.
Fig.2 Test circuit for switching times.
1997 Apr 22
5
oscilloscope
Philips Semiconductors
Product specification
NPN switching transistor
BFX85
PACKAGE OUTLINE
Metal-can cylindrical single-ended package; 3 leads
SOT5/11
seating plane
α
j
w M A M B M
B
1
b
k
D1
2
3
a
D
A
A
0
5
L
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
a
mm
6.60
6.35
5.08
OUTLINE
VERSION
SOT5/11
1997 Apr 22
b
D
D1
j
L
w
α
14.2
12.7
0.2
45°
k
0.48 9.39 8.33 0.85 0.95
0.41 9.08 8.18 0.75 0.75
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-04-11
TO-39
6
Philips Semiconductors
Product specification
NPN switching transistor
BFX85
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Apr 22
7
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© Philips Electronics N.V. 1997
SCA54
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Printed in The Netherlands
117047/00/02/pp8
Date of release: 1997 Apr 22
Document order number:
9397 750 01957