PHILIPS BCY70

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D361
BCY70; BCY71
PNP general purpose transistors
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 Jul 11
Philips Semiconductors
Product specification
PNP general purpose transistors
BCY70; BCY71
FEATURES
PINNING
• Low current (max. 200 mA)
PIN
• Low voltage (max. 45 V).
APPLICATIONS
DESCRIPTION
1
emitter
2
base
3
collector, connected to case
• General purpose industrial applications.
DESCRIPTION
3
1
handbook, halfpage
2
PNP transistor in a TO-18 metal package.
2
3
MAM263
1
Fig.1 Simplified outline (TO-18) and symbol.
QUICK REFERENCE DATA
SYMBOL
VCBO
VCEO
PARAMETER
collector-base voltage
CONDITIONS
MIN.
MAX.
UNIT
open emitter
BCY70
−
−50
V
BCY71
−
−45
V
BCY70
−
−40
V
BCY71
−
−45
V
collector-emitter voltage
open base
ICM
peak collector current
−
−200
mA
Ptot
total power dissipation
Tamb ≤ 25 °C
−
350
mW
hFE
DC current gain
IC = −10 mA; VCE = −1 V
100
−
fT
transition frequency
IC = −10 mA; VCE = −20 V; f = 100 MHz
250
−
1997 Jul 11
2
MHz
Philips Semiconductors
Product specification
PNP general purpose transistors
BCY70; BCY71
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO
VCEO
PARAMETER
collector-base voltage
CONDITIONS
MIN.
MAX.
UNIT
open emitter
BCY70
−
−50
V
BCY71
−
−45
V
BCY70
−
−40
V
BCY71
−
−45
V
−
−5
V
collector-emitter voltage
open base
VEBO
emitter-base voltage
IC
collector current (DC)
−
−200
mA
ICM
peak collector current
−
−200
mA
IBM
peak base current
−
−100
mA
open collector
Ptot
total power dissipation
−
350
mW
Tstg
storage temperature
Tamb ≤ 25 °C
−65
+150
°C
Tj
junction temperature
−
200
°C
Tamb
operating ambient temperature
−65
+150
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient in free air
500
K/W
Rth j-c
thermal resistance from junction to case
150
K/W
1997 Jul 11
3
Philips Semiconductors
Product specification
PNP general purpose transistors
BCY70; BCY71
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
hFE
hFE
VCEsat
MAX.
UNIT
IE = 0; VCB = −50 V
−
−20
nA
IE = 0; VCB = −50 V; Tj = 100 °C
−
−5
µA
collector cut-off current
BCY71
IEBO
MIN.
collector cut-off current
BCY70
ICBO
CONDITIONS
emitter cut-off current
DC current gain
IE = 0; VCB = −45 V
−
−20
nA
IE = 0; VCB = −45 V; Tj = 100 °C
−
−5
µA
IC = 0; VEB = −4 V
−
−10
nA
IC = 0; VEB = −4 V; Tj = 100 °C
−
−2
µA
IC = 0; VEB = −5 V
−
−500
nA
VCE = −1 V
IC = −10 µA
60
−
IC = −0.1 mA
80
−
IC = −1 mA
100
−
IC = −50 mA
45
−
BCY70
100
−
BCY71
−
500
DC current gain
collector-emitter saturation voltage
IC = −10 mA; VCE = −1 V
IC = −10 mA; IB = −1 mA
−
−250
mV
IC = −50 mA; IB = −5 mA
−
−500
mV
IC = −10 mA; IB = −1 mA
−600
−900
mV
VBEsat
base-emitter saturation voltage
IC = −50 mA; IB = −5 mA
−
−1.2
V
Cc
collector capacitance
IE = ie = 0; VCB = −10 V; f = 1 MHz
−
6
pF
Ce
emitter capacitance
IC = ic = 0; VEB = −1 V; f = 1 MHz
−
8
pF
fT
transition frequency
IC = −10 mA; VCE = −20 V; f = 100 MHz
250
−
MHz
F
noise figure
IC = −100 µA; VCE = −5 V; RS = 1 kΩ;
f = 10 Hz to 15.7 kHz
−
6
dB
−
2
dB
BCY70
BCY71
Switching times (between 10% and 90% levels)
BCY70
ton
turn-on time
ICon = −10 mA; IBon = −1 mA; IBoff = 1 mA −
65
ns
td
delay time
−
35
ns
tr
rise time
−
35
ns
toff
turn-off time
−
500
ns
ts
storage time
−
420
ns
tf
fall time
−
80
ns
1997 Jul 11
4
Philips Semiconductors
Product specification
PNP general purpose transistors
BCY70; BCY71
PACKAGE OUTLINE
Metal-can cylindrical single-ended package; 3 leads
SOT18/13
α
j
seating plane
B
w M A M B M
1
b
k
D1
2
3
a
D
A
A
0
5
L
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
a
b
D
D1
j
k
L
w
α
mm
5.31
4.74
2.54
0.47
0.41
5.45
5.30
4.70
4.55
1.03
0.94
1.1
0.9
15.0
12.7
0.40
45°
REFERENCES
OUTLINE
VERSION
IEC
JEDEC
SOT18/13
B11/C7 type 3
TO-18
1997 Jul 11
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-04-18
5
Philips Semiconductors
Product specification
PNP general purpose transistors
BCY70; BCY71
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Jul 11
6
Philips Semiconductors
Product specification
PNP general purpose transistors
BCY70; BCY71
NOTES
1997 Jul 11
7
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© Philips Electronics N.V. 1997
SCA55
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Date of release: 1997 Jul 11
Document order number:
9397 750 02627