PHILIPS BYQ28ED-200

BYQ28 series E and ED
Rectifier diodes ultrafast, rugged
Rev. 04 — 5 December 2007
Product data sheet
1. Product profile
1.1 General description
Ultrafast, dual common cathode, epitaxial rectifier diodes in a SOT78 (TO-220AB) and a
SOT428 (DPAK) plastic package.
1.2 Features
n Fast switching
n Soft recovery characteristic
n Reverse surge capability
n Low thermal resistance
n Low forward voltage drop
n High thermal cycling performance
1.3 Applications
n Output rectifiers in high-frequency switched-mode power supplies
1.4 Quick reference data
n VRRM ≤ 200 V
n VF ≤ 0.895 V
n IO(AV) ≤ 10 A
n trr = 10 ns (typ)
2. Pinning information
Table 1.
Pinning
Pin
Description
1
anode 1
2
cathode
3
anode 2
mb
mounting base; cathode
Simplified outline
[1]
Symbol
mb
mb
1
2
sym084
2
1
3
SOT428 (DPAK)
1 2 3
SOT78 (3-lead TO-220AB)
[1]
3
It is not possible to connect to pin 2 of the SOT428 package.
BYQ28 series E and ED
NXP Semiconductors
Rectifier diodes ultrafast, rugged
3. Ordering information
Table 2.
Ordering information
Type number
Package
Name
Description
Version
BYQ28E-200
TO-220AB
plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead
TO-220AB
SOT78
BYQ28ED-200
DPAK
plastic single-ended surface-mounted package (DPAK); 3-leads (one lead
cropped)
SOT428
4. Limiting values
Table 3.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VRRM
repetitive peak reverse voltage
-
200
V
VRWM
crest working reverse voltage
-
200
V
VR
reverse voltage
square waveform; δ = 1.0
-
200
V
IO(AV)
average output current
square waveform; δ = 0.5;
Tmb ≤ 119 °C; both diodes conducting
-
10
A
IFRM
repetitive peak forward current
tp = 25 µs; square waveform; δ = 0.5;
Tmb ≤ 119 °C; per diode
-
10
A
IFSM
non-repetitive peak forward
current
t = 10 ms; sinusoidal waveform; per
diode
-
50
A
t = 8.3 ms; sinusoidal waveform; per
diode
-
55
A
IRM
peak reverse recovery current
tp = 2 µs; δ = 0.001
-
0.2
A
IRSM
non-repetitive peak reverse
current
tp = 100 µs
-
0.2
A
Tstg
storage temperature
−40
+150
°C
Tj
junction temperature
-
150
°C
-
8
kV
Electrostatic discharge
VESD
electrostatic discharge voltage
all pins; human body model;
C = 250 pF; R = 1.5 kΩ
BYQ28_SER_E_ED_4
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 04 — 5 December 2007
2 of 10
BYQ28 series E and ED
NXP Semiconductors
Rectifier diodes ultrafast, rugged
5. Thermal characteristics
Table 4.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-mb)
thermal resistance from junction to
mounting base
with heatsink compound;
per diode; see Figure 1
-
-
4.5
K/W
with heatsink compound;
both diodes conducting
-
-
3
K/W
-
60
-
K/W
-
50
-
K/W
thermal resistance from junction to ambient in free air; SOT78
Rth(j-a)
[1]
SOT428
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
001aag979
10
Zth(j-mb)
(K/W)
1
10−1
δ=
P
10−2
t
tp
10−3
10−6
tp
T
T
10−5
10−4
10−3
10−2
10−1
1
10
tp (s)
Fig 1. Transient thermal impedance from junction to mounting base as a function of pulse width
BYQ28_SER_E_ED_4
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 04 — 5 December 2007
3 of 10
BYQ28 series E and ED
NXP Semiconductors
Rectifier diodes ultrafast, rugged
6. Characteristics
Table 5.
Characteristics
Tj = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
VF
IR
forward voltage
reverse current
IF = 5 A; Tj = 150 °C; see Figure 2
-
0.8
0.895
V
IF = 5 A; see Figure 2
-
0.95
1.1
V
IF = 10 A; see Figure 2
-
1.1
1.25
V
VR = 200 V
-
2
10
µA
VR = 200 V; Tj = 100 °C
-
0.1
0.2
mA
Dynamic characteristics
Qr
recovered charge
IF = 2 A to VR ≥ 30 V; dIF/dt = 20 A/µs;
see Figure 3
-
4
9
nC
trr
reverse recovery time
ramp recovery; IF = 1 A to VR ≥ 30 V;
dIF/dt = 100 A/µs; see Figure 3
-
15
25
ns
step recovery; when switched from
IF = 0.5 A to IR = 1 A; measured at
IR = 0.25 A
-
10
20
ns
IRM
peak reverse recovery
current
IF = 5 A to VR ≥ 30 V; dIF/dt = 50 A/µs;
see Figure 3
-
0.5
0.7
A
VFR
forward recovery
voltage
IF = 1 A; dIF/dt = 10 A/µs; see Figure 4
-
1
-
V
001aag978
15
IF
(A)
10
(1)
(2)
(3)
5
0
0
0.5
1.0
1.5
VF (V)
(1) Tj = 150 °C; typical values
(2) Tj = 150 °C; maximum values
(3) Tj = 25 °C; maximum values
Fig 2. Forward current as a function of forward voltage
BYQ28_SER_E_ED_4
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 04 — 5 December 2007
4 of 10
BYQ28 series E and ED
NXP Semiconductors
Rectifier diodes ultrafast, rugged
IF
dlF
IF
dt
trr
time
time
VF
10 %
VFR
100 %
Qr
VF
IR
IRM
time
001aab911
001aab912
Fig 3. Reverse recovery definitions
Fig 4. Forward recovery definitions
001aag976
8
Ptot
(W)
δ=1
001aag977
6
Ptot
(W)
a = 1.57
6
1.9
0.5
4
2.2
2.8
0.2
4
4.0
0.1
2
2
0
0
0
2
4
6
8
0
2
IF(AV) (A)
IF(AV) = IF(RMS) × √δ
6
IF(AV) (A)
a = form factor = IF(RMS) / IF(AV)
Fig 5. Forward power dissipation as a function of
average forward current; square waveform;
maximum values
Fig 6. Forward power dissipation as a function of
average forward current; sinusoidal waveform;
maximum values
BYQ28_SER_E_ED_4
Product data sheet
4
© NXP B.V. 2007. All rights reserved.
Rev. 04 — 5 December 2007
5 of 10
BYQ28 series E and ED
NXP Semiconductors
Rectifier diodes ultrafast, rugged
7. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
E
SOT78
A
A1
p
q
mounting
base
D1
D
L2
L1
Q
b1
L
1
2
3
c
b
e
e
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
b
b1
c
D
D1
E
e
L
L1
L2
max.
p
q
Q
mm
4.7
4.1
1.40
1.25
0.9
0.6
1.45
1.00
0.7
0.4
16.0
15.2
6.6
5.9
10.3
9.7
2.54
15.0
12.8
3.30
2.79
3.0
3.8
3.5
3.0
2.7
2.6
2.2
OUTLINE
VERSION
SOT78
REFERENCES
IEC
JEDEC
JEITA
3-lead TO-220AB
SC-46
EUROPEAN
PROJECTION
ISSUE DATE
05-03-22
05-10-25
Fig 7. Package outline SOT78 (TO-220AB)
BYQ28_SER_E_ED_4
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 04 — 5 December 2007
6 of 10
BYQ28 series E and ED
NXP Semiconductors
Rectifier diodes ultrafast, rugged
Plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped)
SOT428
y
E
A
A
A1
b2
E1
mounting
base
D2
D1
HD
2
L
L2
1
L1
3
b1
b
w
M
c
A
e
e1
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
b
b1
b2
c
D1
D2
min
E
E1
min
e
e1
HD
L
L1
min
L2
w
y
max
mm
2.38
2.22
0.93
0.46
0.89
0.71
1.1
0.9
5.46
5.00
0.56
0.20
6.22
5.98
4.0
6.73
6.47
4.45
2.285
4.57
10.4
9.6
2.95
2.55
0.5
0.9
0.5
0.2
0.2
OUTLINE
VERSION
SOT428
REFERENCES
IEC
JEDEC
JEITA
TO-252
SC-63
EUROPEAN
PROJECTION
ISSUE DATE
06-02-14
06-03-16
Fig 8. Package outline SOT428 (TO-252)
BYQ28_SER_E_ED_4
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 04 — 5 December 2007
7 of 10
BYQ28 series E and ED
NXP Semiconductors
Rectifier diodes ultrafast, rugged
8. Revision history
Table 6.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BYQ28_SER_E_ED_4
20071205
Product data sheet
-
BYQ28E_SERIES_3
Modifications:
•
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
•
•
Legal texts have been adapted to the new company name where appropriate.
•
Characteristics: Qrr changed to Qr ‘recovered charge’; trr1 and trr2 changed to trr with
‘ramp recovery’ and ‘step recovery’ added to conditions.
Limiting values table: some parameter descriptions amended to conform to latest
standards; IFRM conditions amended; VESD row added.
BYQ28E_SERIES_3
19981001
Product specification
-
BYQ28E_SERIES_2
BYQ28E_SERIES_2
19980701
Product specification
-
BYQ28E_SERIES_1;
BYQ28EB_SERIES_1
BYQ28E_SERIES_1;
BYQ28EB_SERIES_1
19960801
Product specification
-
-
BYQ28_SER_E_ED_4
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 04 — 5 December 2007
8 of 10
BYQ28 series E and ED
NXP Semiconductors
Rectifier diodes ultrafast, rugged
9. Legal information
9.1
Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
9.2
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
9.3
Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
9.4
Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
10. Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: [email protected]
BYQ28_SER_E_ED_4
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 04 — 5 December 2007
9 of 10
NXP Semiconductors
BYQ28 series E and ED
Rectifier diodes ultrafast, rugged
11. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
9.1
9.2
9.3
9.4
10
11
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 1
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 6
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 8
Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Contact information. . . . . . . . . . . . . . . . . . . . . . 9
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2007.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 5 December 2007
Document identifier: BYQ28_SER_E_ED_4