ETC BYC8X-600

BYC8X-600
Hyperfast rectifier diode, low switching loss
Rev. 02 — 13 March 2009
Product data sheet
http://www.qsdaz.com
1. Product profile
1.1 General description
Hyperfast epitaxial rectifier diode in a SOD113 (2-lead TO-220F) plastic package.
1.2 Features and benefits
„ Low reverse recovery current and low
thermal resistance
„ Reduces switching losses in
associated MOSFET
1.3 Applications
„ Continuous Current Mode (CCM)
Power Factor Correction (PFC)
„ Half-bridge/full-bridge switched-mode
power supplies
„ Half-bridge lighting ballasts
1.4 Quick reference data
Table 1.
Quick reference
Symbol Parameter
VRRM
repetitive peak
reverse voltage
IF(AV)
average forward
current
Conditions
Min
Typ
Max
Unit
-
-
600
V
square-wave pulse; δ = 0.5;
Th = 59 °C; see Figure 1;
see Figure 2
-
-
8
A
IF = 8 A; VR = 400 V;
dIF/dt = 500 A/µs;
Tj = 25 °C; see Figure 5
-
19
-
ns
IF = 8 A; Tj = 150 °C; see
Figure 4
-
1.4
1.85
V
Dynamic characteristics
trr
reverse recovery
time
Static characteristics
VF
forward voltage
BYC8X-600
NXP Semiconductors
Hyperfast rectifier diode, low switching loss
2. Pinning information
Table 2.
Pinning information
Pin
Symbol
Description
Simplified outline
1
K
cathode
2
A
anode
mb
n.c.
mounting base; isolated
Graphic symbol
K
mb
A
001aaa020
1
2
SOD113
(TO-220F)
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
BYC8X-600
TO-220F
plastic single-ended package; isolated heatsink mounted; 1 mounting
hole; 2-lead TO-220 "full pack"
Version
SOD113
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Min
Max
Unit
VRRM
repetitive peak reverse
voltage
Conditions
-
600
V
VRWM
crest working reverse
voltage
-
600
V
IF(AV)
average forward
current
square-wave pulse; δ = 0.5; Th = 59 °C; see Figure
1; see Figure 2
-
8
A
IFRM
repetitive peak forward
current
square-wave pulse; δ = 0.5; tp = 25 µs; Th = 59 °C
-
16
A
IFSM
non-repetitive peak
forward current
tp = 10 ms; sine-wave pulse; Tj(init) = 25 °C
-
80
A
tp = 8.3 ms; sine-wave pulse; Tj(init) = 25 °C
-
88
A
Tstg
storage temperature
-40
150
°C
Tj
junction temperature
-
150
°C
BYC8X-600_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 13 March 2009
2 of 9
BYC8X-600
NXP Semiconductors
Hyperfast rectifier diode, low switching loss
003aab471
20
Ptot
(W)
a = 1.57
1.9
16
003aab472
30
Ptot
(W)
25
δ =1
2.2
2.8
12
0.5
20
4.0
0.2
15
0.1
8
10
4
5
0
0
0
Fig 1.
2
4
6
IF(AV) (A)
8
0
Forward power dissipation as a function of
average forward current; sinusoidal waveform;
maximum values
Fig 2.
4
8
IF(AV) (A)
12
Forward power dissipation as a function of
average forward current; square waveform;
maximum values
5. Thermal characteristics
Table 5.
Thermal characteristics
Symbol
Parameter
Min
Typ
Max
Unit
Rth(j-h)
thermal resistance from with heatsink compound; see Figure 3
junction to heatsink
Conditions
-
-
4.8
K/W
Rth(j-a)
thermal resistance from
junction to ambient free
air
-
55
-
K/W
001aaf045
10
Zth(j-h)
(K/W)
1
10−1
δ=
P
tp
T
10−2
t
tp
10−3
10−6
Fig 3.
T
10−5
10−4
10−3
10−2
10−1
1
10
tp (s)
Transient thermal impedance from junction to heatsink as a function of pulse width
BYC8X-600_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 13 March 2009
3 of 9
BYC8X-600
NXP Semiconductors
Hyperfast rectifier diode, low switching loss
6. Isolation characteristics
Table 6.
Isolation characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Visol(RMS)
RMS isolation voltage
f = 1 MHz; RH = 65 %; between all pins
and external heatsink
-
-
2500
V
Cisol
isolation capacitance
from cathode to external heatsink
-
10
-
pF
Conditions
Min
Typ
Max
Unit
IF = 8 A; Tj = 150 °C; see Figure 4
-
1.4
1.85
V
7. Characteristics
Table 7.
Symbol
Characteristics
Parameter
Static characteristics
VF
IR
forward voltage
reverse current
IF = 8 A; Tj = 25 °C
-
2
2.9
V
IF = 16 A; Tj = 150 °C
-
1.7
2.3
V
VR = 500 V; Tj = 100 °C
-
1.1
3
mA
VR = 600 V
-
9
150
µA
Dynamic characteristics
Qr
recovered charge
IF = 1 A; dIF/dt = 100 A/µs
-
12
-
nC
trr
reverse recovery time
IF = 8 A; VR = 400 V; dIF/dt = 500 A/µs;
Tj = 100 °C
-
32
40
ns
IF = 1 A; VR = 30 V; dIF/dt = 50 A/µs;
Tj = 25 °C
-
30
52
ns
IF = 8 A; VR = 400 V; dIF/dt = 500 A/µs;
Tj = 25 °C; see Figure 5
-
19
-
ns
IF = 10 A; VR = 400 V; dIF/dt = 500 A/µs;
Tj = 100 °C
-
9.5
12
A
IF = 8 A; VR = 400 V; dIF/dt = 50 A/µs;
Tj = 125 °C
-
1.5
5.5
A
IF = 10 A; dIF/dt = 100 A/µs; Tj = 25 °C;
see Figure 6
-
8
10
V
IRM
VFR
peak reverse recovery
current
forward recovery
voltage
BYC8X-600_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 13 March 2009
4 of 9
BYC8X-600
NXP Semiconductors
Hyperfast rectifier diode, low switching loss
003aac976
20
dlF
IF
IF
(A)
dt
16
trr
12
time
25 %
8
(1)
(2)
(3)
100 %
Qr
4
IRM
IR
003aac562
0
0
Fig 4.
1
2
3
VF (V)
4
Fig 5.
Reverse recovery definitions; ramp recovery
Forward current as a function of forward
voltage
IF
time
VF
VFRM
VF
time
001aab912
Fig 6.
Forward recovery definitions
BYC8X-600_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 13 March 2009
5 of 9
BYC8X-600
NXP Semiconductors
Hyperfast rectifier diode, low switching loss
8. Package outline
Plastic single-ended package; isolated heatsink mounted;
1 mounting hole; 2-lead TO-220 'full pack'
SOD113
A
A1
E
z
P
q
m
T
D
HE
L2
j
L1(1)
k
Q
L
1
b1
2
b
w
c
M
e
0
10
z(2)
20 mm
scale
0.8
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
b
b1
c
D
E
e
HE
max
j
k
L
L 1(1)
L2
max
m
P
Q
q
T
w
mm
4.6
4.0
2.9
2.5
0.9
0.7
1.1
0.9
0.7
0.4
15.8
15.2
10.3
9.7
5.08
19.0
2.7
1.7
0.6
0.4
14.4
13.5
3.3
2.8
0.5
6.5
6.3
3.2
3.0
2.6
2.3
2.6
2.55
0.4
Notes
1. Terminals are uncontrolled within zone L1.
2. z is depth of T.
OUTLINE
VERSION
SOD113
Fig 7.
REFERENCES
IEC
JEDEC
JEITA
2-lead TO-220F
EUROPEAN
PROJECTION
ISSUE DATE
02-04-09
07-06-18
Package outline SOD113 (TO-220F)
BYC8X-600_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 13 March 2009
6 of 9
BYC8X-600
NXP Semiconductors
Hyperfast rectifier diode, low switching loss
9. Revision history
Table 8.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BYC8X-600_2
20090313
Product data sheet
-
BYC8X-600_1
Modifications:
BYC8X-600_1
•
•
Forward voltage values updated in characteristics.
Recovered charge parameter added in characteristics.
20070905
Product data sheet
-
BYC8X-600_2
Product data sheet
-
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 13 March 2009
7 of 9
BYC8X-600
NXP Semiconductors
Hyperfast rectifier diode, low switching loss
10. Legal information
10.1 Data sheet status
Document status [1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term 'short data sheet' is explained in section "Definitions".
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URL http://www.nxp.com.
10.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
10.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein may
be subject to export control regulations. Export might require a prior
authorization from national authorities.
10.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
11. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
BYC8X-600_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 13 March 2009
8 of 9
BYC8X-600
NXP Semiconductors
Hyperfast rectifier diode, low switching loss
12. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
10.1
10.2
10.3
10.4
11
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
General description . . . . . . . . . . . . . . . . . . . . . .1
Features and benefits . . . . . . . . . . . . . . . . . . . . .1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data . . . . . . . . . . . . . . . . . . . . .1
Pinning information . . . . . . . . . . . . . . . . . . . . . . .2
Ordering information . . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2
Thermal characteristics . . . . . . . . . . . . . . . . . . .3
Isolation characteristics . . . . . . . . . . . . . . . . . . .4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .4
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .6
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . .7
Legal information. . . . . . . . . . . . . . . . . . . . . . . . .8
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . .8
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
Contact information. . . . . . . . . . . . . . . . . . . . . . .8
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 13 March 2009
Document identifier: BYC8X-600_2