Bulletin I27209 01/06 GB75YF120N IGBT FOUR PAK MODULE VCES = 1200V Features • Square RBSOA • HEXFRED low Qrr, low Switching Energy • Positive VCE(on) Temperature Coefficient • Copper Baseplate IC = 75A @ TC = 67°C VCE(on) typ. = 3.4V • Low Stray Inductance Design ECONO2 4PAK Benefits • Benchmark Efficiency for SMPS appreciation in particular HF welding • Rugged Transient Performance • Low EMI, Requires Less Snubbing • Direct Mounting to Heatsink space saving • PCB Solderable Terminals • Low Junction to Case Thermal Resistance Absolute Maximum Ratings Parameter Max. VCES Collector-to-Emitter Voltage 1200 Units V IC @ Tc=25°C Continuous Collector Current 100 A IC @ Tc=80°C Continuous Collector Current 67 ICM Pulsed Collector Current (Ref. Fig. C.T.5) 200 ILM Clamped Inductive Load Current 200 IF @ Tc=25°C Diode Continuous Forward Current 40 IF @ Tc=80°C Diode Continuous Forward Current 25 IFM Diode Maximum Forward Current 150 VGE Gate-to-Emitter Voltage ±20 V PD @ Tc=25°C Maximum Power Dissipation (IGBT) 480 W PD @ Tc=80°C Maximum Power Dissipation (IGBT) 270 TJ Maximum Operating Junction Temperature TSTG Storage Temperature Range VISOL Isolation Voltage 150 °C -40 to +125 AC 2500 (MIN) V Thermal and Mechanical Characteristics Min Typical Maximum Units RθJC (IGBT) Junction-to-Case IGBT Parameter - - 0.26 °C/W RθJC (Diode) Junction-to-Case Diode - - 1.00 RθCS (Module) Case-to-Sink, flat, greased surface Mounting Torque (M5) Weight - 0.05 - 2.7 - 3.3 - 170 - N*m g 1 GB75YF120N Bulletin I27209 01/06 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) BV(CES) Parameter Collector-to-Emitter Breakdown Voltage V CE(ON) Collector-to-Emitter Voltage Min. Typ. Max. Units Conditions 1200 V VGE = 0 IC = 500µA - 3.4 4.0 - 3.8 4.5 V IC = 75A VGE = 15V - 4.0 4.5 IC = 75A VGE = 15V TJ = 125°C - 4.53 5.1 IC = 100A VGE = 15V TJ = 125°C IC = 100A VGE = 15V VGE(th) Gate Threshold Voltage 4.0 5.0 6.0 ∆V GE (th)/∆T J Thresold Voltage temp. coefficient - -11 - ICES Zero Gate Voltage Collector Current - 7 250 - 580 2000 - 3.9 5.0 - 4.43 5.8 - 4.37 5.4 IF = 75A Tj = 125°C - 5.02 6.4 IF = 100A Tj = 125°C - - ± 200 V FM IGES Diode Forward Voltage Drop Gate-to-Emitter Leakage Current VCE = VGE IC = 250µA mV/°C VCE = VGE IC = 1mA (25°C-125°C) µA VGE = 0 VCE = 1200V V IF = 75A VGE = 0 VCE = 1200V Tj = 125°C IF = 100A nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions QG Total Gate Charge (turn-on) - 630 - QGE Gate-to-Emitter Charge (turn-on) - 65 - IC = 50A QGC Gate-to-Collector Charge (turn-on) - 250 - EON Turn-On Switching Loss - 1505 - EOFF Turn-Off Switching Loss - 2411 - ETOT Total Switching Loss - 3916 - EON Turn-On Switching Loss - 2248 - EOFF Turn-Off Switching Loss - 3351 - ETOT Total Switching Loss - 7599 - td(on) Turn-On delay time - 169 - tr Rise time - 71 - VGE = 15V RG = 4.7Ω L =500µH td(off) Turn-Off delay time - 393 - Tj = 125°C tf Fall time - 136 - RBSOA Reverse Bias Safe Operating Area FULL SQUARE SCSOA Short Circuit Safe Operating Area nC VCC = 600A VGE = 15V µJ IC = 50A VCC = 600V VGE = 15V RG = 4.7Ω L = 500µH Tj = 25°C c µJ IC = 50A VCC = 600V VGE = 15V RG = 4.7Ω L = 500µH Tj = 125°C c ns IC = 50A VCC = 600V Tj = 150°C IC = 150A RG =10Ω VGE = 15V to 0 10 - - µs Tj = 150°C VCC = 900V VP = 1200V RG = 10Ω Irr Diode Peak Rev. Recovery Current - t rr Diode Rev. Recovery Time Qrr Total Rev. Recovery Charge c Energy losses include "tail" and diode reverse recovery. 2 2.5 - 2.35 4.0 - 0.401 0.5 µs Tj = 25°C VCC = 600V IF = 75A - 0.655 0.8 µs Tj = 125°C dI/ dt = 10A/µs - 0.181 0.4 µC Tj = 25°C - 0.54 µC Tj = 125°C 1.5 A VGE = 15V to 0 1.45 Tj = 25°C Tj = 125°C GB75YF120N Bulletin I27209 01/06 500 160 140 400 120 PD (W) IC (A) 100 80 60 40 300 200 100 20 0 0 20 40 60 80 100 0 120 0 20 40 60 80 100 120 140 160 TC (°C) TC (°C) Fig. 1 - Maximum DC Collector Current vs. Case Temperature Fig. 2 - Power Dissipation vs. Case Temperature 1000 1000 100 100 PD (W) IC (A) 10 1 10 0.1 0.01 1 10 100 1000 10000 1 10 100 1000 VCE (V) TC (°C) Fig. 3 - Forward SOA TC = 25°C; TJ ≤ 150°C Fig. 4 - Reverse Bias SOA TJ = 150°C; VGE =15V 10000 3 GB75YF120N Bulletin I27209 01/06 160 160 VGE = 18V VGE = 15V VGE = 12V VGE = 9V 140 120 120 100 ICE (A) ICE (A) 100 80 60 40 40 20 20 0 0 1 2 3 4 5 0 6 1 2 3 4 5 6 7 VCE (V) VCE (V) Fig. 5 - Typ. IGBT Output Characteristics TJ = 25°C; tp = 500µs Fig. 6 - Typ. IGBT Output Characteristics TJ = 125°C; tp = 500µs 160 8 20 16 ICE = 75A ICE = 50A 14 ICE = 25A 18 140 25°C 125°C 120 VCE (V) 100 IF (A) 80 60 0 80 60 12 10 8 6 40 4 20 2 0 0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 VF (V) Fig. 7 - Typ. Diode Forward Characteristics tp = 500µs 4 VGE = 18V VGE = 15V VGE = 12V VGE = 9V 140 7 9 11 13 15 17 VGE (V) Fig. 8 - Typical VCE vs. VGE TJ = 25°C 19 GB75YF120N Bulletin I27209 01/06 20 300 ICE = 75A ICE = 50A 18 16 ICE = 25A 14 200 12 ICE (A) VCE (V) TJ = 25°C TJ = 125°C 250 10 8 150 100 6 4 50 2 0 0 7 9 11 13 15 17 19 5 6 7 8 9 10 11 VGE (V) VGE (V) Fig. 9 - Typical VCE vs. VGE TJ = 125°C Fig. 10 - Typ. Transfer Characteristics VCE = 20V; tp = 500µs 12 5.5 1 5 TJ = 125°C TJ = 25°C 4.5 Vgeth (V) ICES (mA) 0.1 0.01 4 TJ = 125°C 3.5 3 TJ = 25°C 2.5 2 0.001 400 600 800 1000 1200 0 0.2 0.4 0.6 0.8 VCES (V) IC (mA) Fig. 11 - Typ Zero Gate Voltage Collector Current Fig. 12 - Typ Threshold Voltage 1 5 GB75YF120N Bulletin I27209 01/06 1 9 tdOFF 8 Switching Time (µs) 7 Energy (mJ) 6 EOFF 5 4 EON 3 tdON tF 0.1 tR 2 1 0.01 0 20 40 60 80 100 120 140 20 160 40 60 80 100 120 140 IC (A) IC (A) Fig. 13 - Typ. Energy Loss vs. IC TJ = 125°C; L=200µH; VCE= 600V RG= 5Ω; VGE= 15V Fig. 14 - Typ. Switching Time vs. IC TJ = 125°C; L=200µH; VCE= 600V RG= 5Ω; VGE= 15V 12 160 800 700 10 600 125°C tRR (ns) IRR (A) 8 6 500 125°C 400 300 4 25°C 200 25°C 2 100 0 0 0 6 20 40 60 80 100 0 20 40 60 80 dIF/ dt (A/µs) dIF/ dt (A/µs) Fig. 15- Typical Diode IREC vs. diF/dt VCC= 600V; IF= 50A Fig. 16- Typical Diode tRR vs. diF/dt VCC= 600V; IF= 50A 100 GB75YF120N Bulletin I27209 01/06 16 1600 14 125°C 1200 12 1000 10 VGE (V) QRR (nC) 1400 800 600 400 typical value 8 6 4 25°C 2 200 0 0 0 20 40 60 80 0 100 100 200 300 400 500 600 dIF/ dt (A/µs) QG, Total Gate Charge (nC) Fig. 17- Typical Diode QRR vs. diF/dt VCC= 600V; IF= 50A Fig. 18 - Typical Gate Charge vs. VGE ICE = 5.0A; L = 600µH 700 1 0.1 0.20 0.10 0.05 0.01 0.001 0.0001 1E-005 1E-006 0.02 0.01 VGE (V) Thermal Response (ZthJC ) D = 0.50 SINGLE PULSE ( THERMAL RESPONSE ) 1E-005 0.0001 0.001 0.01 0.1 1 10 t1, Rectangular Pulse Duration (sec) Fig 19 - Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) 7 GB75YF120N Bulletin I27209 01/06 10 0.10 1 VGE (V) Thermal Response (ZthJC ) D = 0.50 0.20 0.1 SINGLE PULSE ( THERMAL RESPONSE ) 0.05 0.01 0.02 0.01 0.001 1E-006 1E-005 0.0001 0.001 t1, Rectangular Pulse Duration (sec) Fig 20 - Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) L L VCC DUT 0 80 V DUT Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit R= diode clamp / DUT Driver D C 900V - 5V DUT / DRIVER DUT VCC Rg 8 VCC ICM L DUT Fig.C.T.3 - S.C. SOA Circuit 1000V Rg 1K Fig.C.T.4 - Switching Loss Circuit VCC Rg Fig.C.T.5 - Resistive Load Circuit GB75YF120N Bulletin I27209 01/06 Econo2 4Pak Package Outline 1.25 Dimensions are shown in millimeters (inches) 1.25 48,49 21,22 28 40 41 29 15,16,17 5,6,7 36 32 37 33 46,47 INV 600V 15A Made in Italy (beta sample) 3M01BT / 0344 23,24 Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 01/06 9