PHILIPS BUJ303AX

TO
-2
20F
BUJ303AX
NPN power transistor
Rev. 05 — 3 May 2011
Product data sheet
1. Product profile
1.1 General description
High voltage, high speed, planar passivated NPN power switching transistor in a
SOT186A (TO220F) "full pack" plastic package.
1.2 Features and benefits
„ Fast switching
„ Very high voltage capability
„ Isolated package
„ Very low switching and conduction
losses
1.3 Applications
„ DC-to-DC converters
„ Inverters
„ High frequency electronic lighting
ballasts
„ Motor control systems
1.4 Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
IC
collector current
see Figure 1; see Figure 2;
see Figure 4
-
-
5
A
Ptot
total power dissipation
Th ≤ 25 °C; see Figure 3
-
-
32
W
VCESM
collector-emitter peak
voltage
VBE = 0 V
-
-
1000 V
IC = 5 mA; VCE = 5 V;
Th = 25 °C; see Figure 11
10
22
35
IC = 500 mA; VCE = 5 V;
Th = 25 °C; see Figure 11
14
25
35
IC = 2.5 A; IBon = 0.5 A;
see Figure 14; see Figure 15;
VBB = -5 V; LB = 1 µH;
Th = 25 °C
-
145
160
Static characteristics
hFE
DC current gain
Dynamic characteristics
tf
fall time
ns
BUJ303AX
NXP Semiconductors
NPN power transistor
2. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
1
B
base
2
C
collector
Simplified outline
Graphic symbol
mb
3
E
emitter
mb
n.c.
mounting base; isolated
C
B
E
sym123
1 2 3
SOT186A (TO-220F)
3. Ordering information
Table 3.
Ordering information
Type number
Package
BUJ303AX
Name
Description
Version
TO-220F
plastic single-ended package; isolated heatsink mounted;
1 mounting hole; 3-lead TO-220 "full pack"
SOT186A
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VCESM
collector-emitter peak voltage
VBE = 0 V
-
1000
V
VCEO
collector-emitter voltage
IB = 0 A
-
500
V
see Figure 1; see Figure 2; see Figure 4
-
5
A
-
10
A
-
2
A
-
4
A
IC
collector current
ICM
peak collector current
IB
base current
IBM
peak base current
DC
Th ≤ 25 °C; see Figure 3
Ptot
total power dissipation
-
32
W
Tstg
storage temperature
-65
150
°C
Tj
junction temperature
-
150
°C
BUJ303AX
Product data sheet
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Rev. 05 — 3 May 2011
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BUJ303AX
NXP Semiconductors
NPN power transistor
VCC
LC
IBon
VBB
003aag028
12
IC
(A)
VCL(CE)
probe point
LB
8
DUT
001aab999
4
0
Fig 1.
Test circuit for reverse bias safe operating area
Fig 2.
0
400
800
1200
VCEclamp (V)
Reverse bias safe operating area
03aa13
120
Pder
(%)
80
40
0
0
50
100
150
200
Th (°C)
Fig 3.
Normalized total power dissipation as a function of heatsink temperature
BUJ303AX
Product data sheet
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Rev. 05 — 3 May 2011
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BUJ303AX
NXP Semiconductors
NPN power transistor
003aag029
102
IC
(A)
duty cycle = 0.01
10
ICMmax
ICmax
II(3)
tp = 10 μs
(1)
100 μs
1
(2)
1 ms
I(3)
10-1
10 ms
DC
10-2
III(3)
1
102
10
VCEclamp (V)
103
(1) Ptot maximum and Ptot peak maximum lines.
(2) Second breakdown limits.
(3) I = Region of permissible DC operation.
II = Extension for repetitive pulse operation.
III = Extension during turn-on in single transistor converters provided that RBE ≤ 100 Ω and tp ≤ 0.6 μs.
Fig 4.
Forward bias safe operating area for Tmb ≤ 25 °C
BUJ303AX
Product data sheet
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Rev. 05 — 3 May 2011
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BUJ303AX
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NPN power transistor
5. Thermal characteristics
Table 5.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-h)
thermal resistance from junction to
heatsink
with heatsink compound ;
see Figure 5
-
-
3.95
K/W
Rth(j-a)
thermal resistance from junction to
ambient
in free air
-
55
-
K/W
003aag067
10
Zth(j-h)
(K/W)
δ = 0.5
1
0.2
0.1
0.05
0.02
10-1
Ptot
δ=
0
10-2
tp
10-3
10-6
Fig 5.
10-5
10-4
10-3
10-2
10-1
1
tp
T
t
T
10
tp (s)
102
Transient thermal impedance from junction to heatsink as a function of pulse duration
6. Isolation characteristics
Table 6.
Isolation characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Visol(RMS)
RMS isolation voltage
50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %; Th = 25 °C;
from all terminals to external heatsink; clean
and dust free
-
-
2500
V
Cisol
isolation capacitance
from collector to external heatsink ;
f = 1 MHz; Th = 25 °C
-
10
-
pF
BUJ303AX
Product data sheet
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Rev. 05 — 3 May 2011
© NXP B.V. 2011. All rights reserved.
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BUJ303AX
NXP Semiconductors
NPN power transistor
7. Characteristics
Table 7.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
VBE = 0 V; VCE = 1000 V; Th = 25 °C
[1]
-
-
1
mA
VBE = 0 V; VCE = 1000 V; Tj = 125 °C
[1]
-
-
2
mA
collector-base cut-off current VCB = 1000 V; IE = 0 A; Th = 25 °C
[1]
-
-
1
mA
ICEO
collector-emitter cut-off
current
VCE = 500 V; IB = 0 A; Th = 25 °C
[1]
-
-
0.1
mA
ICES
ICBO
collector-emitter cut-off
current
IEBO
emitter-base cut-off current
VEB = 9 V; IC = 0 A; Th = 25 °C
-
-
0.1
mA
VCEOsus
collector-emitter sustaining
voltage
IB = 0 A; IC = 10 mA; LC = 25 mH;
Th = 25 °C; see Figure 6; see Figure 7
500
-
-
V
VCEsat
collector-emitter saturation
voltage
IC = 3 A; IB = 0.6 A; Th = 25 °C;
see Figure 8; see Figure 9
-
0.25
1.5
V
VBEsat
base-emitter saturation
voltage
IC = 3 A; IB = 0.6 A; Th = 25 °C;
see Figure 10
-
0.97
1.3
V
hFE
DC current gain
IC = 5 mA; VCE = 5 V; Th = 25 °C;
see Figure 11
10
22
35
IC = 500 mA; VCE = 5 V; Th = 25 °C;
see Figure 11
14
25
35
IC = 2.5 A; VCE = 5 V; Th = 25 °C;
see Figure 11
10
13.5
17
IC = 3 A; VCE = 5 V; Th = 25 °C;
see Figure 11
-
12
-
hFEsat
DC saturation current gain
Dynamic characteristics
ton
turn-on time
ts
storage time
fall time
tf
[1]
IC = 2.5 A; IBon = 0.5 A; IBoff = -0.5 A;
RL = 75 Ω; VBB = -4 V; Th = 25 °C;
resistive load; see Figure 12;
see Figure 13
-
0.5
0.7
µs
-
3.3
4
µs
IC = 2.5 A; IBon = 0.5 A; VBB = -5 V;
LB = 1 µH; Th = 25 °C; inductive load;
see Figure 14; see Figure 15
-
1.4
1.6
µs
IC = 2.5 A; IBon = 0.5 A; VBB = -5 V;
LB = 1 µH; Tj = 100 °C; inductive load;
see Figure 14; see Figure 15
-
1.7
1.9
µs
IC = 2.5 A; IBon = 0.5 A; IBoff = -0.5 A;
RL = 75 Ω; VBB = -4 V; Th = 25 °C;
resistive load; see Figure 12;
see Figure 13
-
0.33
0.45
µs
IC = 2.5 A; IBon = 0.5 A; VBB = -5 V;
LB = 1 µH; Th = 25 °C; see Figure 14;
see Figure 15
-
145
160
ns
IC = 2.5 A; IBon = 0.5 A; VBB = -5 V;
LB = 1 µH; Tj = 100 °C; inductive load;
see Figure 14; see Figure 15
-
160
200
ns
Measured with half-sine wave voltage (curve tracer).
BUJ303AX
Product data sheet
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Rev. 05 — 3 May 2011
© NXP B.V. 2011. All rights reserved.
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BUJ303AX
NXP Semiconductors
NPN power transistor
IC
(mA)
50 V
100 Ω to 200 Ω
horizontal
oscilloscope
250
vertical
6V
300 Ω
1Ω
100
30 Hz to 60 Hz
001aab987
10
0
min
VCE (V)
VCEOsus
001aab988
Fig 6.
Test circuit for collector-emitter sustaining
voltage
Oscilloscope display for collector-emitter
sustaining voltage test waveform
003aag032
003aag031
2.0
VCEsat
(V)
1.6
Fig 7.
IC = 1 A
2A 3A
0.5
VCEsat
(V)
4A
0.4
1.2
0.3
0.8
0.2
0.4
0
10-2
Fig 8.
0.1
10-1
1
IB (A)
Collector-emitter saturation voltage as a
function of base current; typical values
BUJ303AX
Product data sheet
0
10-1
10
Fig 9.
1
IC (A)
10
Collector-emitter saturation voltage as a
function of collector current; typical values
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© NXP B.V. 2011. All rights reserved.
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BUJ303AX
NXP Semiconductors
NPN power transistor
003aag033
1.4
VBEsat
(V)
1.2
003aag034
102
hFE
VCE = 5 V
1.0
0.8
10
0.6
0.4
1V
0.2
0
10-1
1
IC (A)
1
10-2
10
Fig 10. Base-emitter saturation voltage as a function of
collector current; typical values
VCC
10-1
1
10
IC (A)
Fig 11. DC current gain as a function of collector
current; typical values
IC
ICon
90 %
90 %
RL
VIM
0
RB
DUT
10 %
tp
t
tf
T
001aab989
ts
IB
ton
toff
IBon
10 %
t
tr ≤ 30 ns
−IBoff
Fig 12. Test circuit for resistive load switching
BUJ303AX
Product data sheet
001aab990
Fig 13. Switching times waveforms for resistive load
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BUJ303AX
NXP Semiconductors
NPN power transistor
IC
VCC
ICon
90 %
LC
IBon
VBB
LB
DUT
001aab991
10 %
t
tf
IB
ts
toff
IBon
t
−IBoff
001aab992
Fig 14. Test circuit for inductive load switching
BUJ303AX
Product data sheet
Fig 15. Switching times waveforms for inductive load
All information provided in this document is subject to legal disclaimers.
Rev. 05 — 3 May 2011
© NXP B.V. 2011. All rights reserved.
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BUJ303AX
NXP Semiconductors
NPN power transistor
8. Package outline
Plastic single-ended package; isolated heatsink mounted;
1 mounting hole; 3-lead TO-220 'full pack'
SOT186A
E
A
A1
P
q
D1
mounting
base
T
D
j
L2
L1
K
Q
b1
L
b2
1
2
3
b
c
w M
e
e1
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
UNIT
A
A1
b
b1
b2
c
D
D1
E
e
e1
j
K
mm
4.6
4.0
2.9
2.5
0.9
0.7
1.1
0.9
1.4
1.0
0.7
0.4
15.8
15.2
6.5
6.3
10.3
9.7
2.54
5.08
2.7
1.7
0.6
0.4
L
L1
14.4 3.30
13.5 2.79
L2
max.
P
Q
q
3
3.2
3.0
2.6
2.3
3.0
2.6
T
(2)
2.5
w
0.4
Notes
1. Terminal dimensions within this zone are uncontrolled.
2. Both recesses are ∅ 2.5 × 0.8 max. depth
OUTLINE
VERSION
SOT186A
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
02-04-09
06-02-14
3-lead TO-220F
Fig 16. Package outline SOT186A (TO-220F)
BUJ303AX
Product data sheet
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Rev. 05 — 3 May 2011
© NXP B.V. 2011. All rights reserved.
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BUJ303AX
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NPN power transistor
9. Revision history
Table 8.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BUJ303AX v.5
20110503
Product data sheet
-
BUJ303AX v.4
-
BUJ303AX v.3
Modifications:
BUJ303AX v.4
BUJ303AX
Product data sheet
•
Various changes to content.
20110415
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 05 — 3 May 2011
© NXP B.V. 2011. All rights reserved.
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BUJ303AX
NXP Semiconductors
NPN power transistor
10. Legal information
10.1 Data sheet status
Document status [1] [2]
Product status [3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term 'short data sheet' is explained in section "Definitions".
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URL http://www.nxp.com.
10.2 Definitions
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
NXP Semiconductors does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
10.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
BUJ303AX
Product data sheet
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
All information provided in this document is subject to legal disclaimers.
Rev. 05 — 3 May 2011
© NXP B.V. 2011. All rights reserved.
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BUJ303AX
NXP Semiconductors
NPN power transistor
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein may
be subject to export control regulations. Export might require a prior
authorization from national authorities.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
10.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
11. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
BUJ303AX
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 05 — 3 May 2011
© NXP B.V. 2011. All rights reserved.
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BUJ303AX
NXP Semiconductors
NPN power transistor
12. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
10.1
10.2
10.3
10.4
11
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
General description . . . . . . . . . . . . . . . . . . . . . .1
Features and benefits . . . . . . . . . . . . . . . . . . . . .1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data . . . . . . . . . . . . . . . . . . . . .1
Pinning information . . . . . . . . . . . . . . . . . . . . . . .2
Ordering information . . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2
Thermal characteristics . . . . . . . . . . . . . . . . . . .5
Isolation characteristics . . . . . . . . . . . . . . . . . . .5
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 11
Legal information. . . . . . . . . . . . . . . . . . . . . . . .12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Contact information. . . . . . . . . . . . . . . . . . . . . .13
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2011.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 3 May 2011
Document identifier: BUJ303AX