PHILIPS 74HC1G00GV

74HC1G00; 74HCT1G00
2-input NAND gate
Rev. 04 — 11 July 2007
Product data sheet
1. General description
The 74HC1G00 and 74HCT1G00 are high speed Si-gate CMOS devices. They provide a
2-input NAND function.
The HC device has CMOS input switching levels and supply voltage range 2 V to 6 V.
The HCT device has TTL input switching levels and supply voltage range 4.5 V to 5.5 V.
The standard output currents are half those of the 74HC00 and 74HCT00.
2. Features
n
n
n
n
n
Symmetrical output impedance
High noise immunity
Low power dissipation
Balanced propagation delays
SOT353-1 and SOT753 package options
3. Ordering information
Table 1.
Ordering information
Type number
Package
74HC1G00GW
−40 °C to +125 °C
TSSOP5 plastic thin shrink small outline package; 5 leads;
body width 1.25 mm
SOT353-1
−40 °C to +125 °C
SC-74A
SOT753
Temperature range Name
74HCT1G00GW
74HC1G00GV
Description
plastic surface-mounted package; 5 leads
74HCT1G00GV
4. Marking
Table 2.
Marking codes
Type number
Marking
74HC1G00GW
HA
74HCT1G00GW
TA
74HC1G00GV
H00
74HCT1G00GV
T00
Version
74HC1G00; 74HCT1G00
NXP Semiconductors
2-input NAND gate
5. Functional diagram
B
1
B
2
A
1
Y
&
4
4
Y
2
Fig 1. Logic symbol
A
mna098
mna097
Fig 2. IEC logic symbol
mna099
Fig 3. Logic diagram
6. Pinning information
6.1 Pinning
74HC1G00
74HCT1G00
B
1
A
2
GND
3
5
VCC
4
Y
001aaf086
Fig 4. Pin configuration
6.2 Pin description
Table 3.
Pin description
Symbol
Pin
Description
B
1
data input
A
2
data input
GND
3
ground (0 V)
Y
4
data output
VCC
5
supply voltage
7. Functional description
Table 4.
Function table
H = HIGH voltage level; L = LOW voltage level
Input
Output
A
B
Y
L
L
H
L
H
H
H
L
H
H
H
L
74HC_HCT1G00_4
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 04 — 11 July 2007
2 of 10
74HC1G00; 74HCT1G00
NXP Semiconductors
2-input NAND gate
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). [1]
Symbol
Parameter
Conditions
Min
Max
Unit
VCC
supply voltage
−0.5
+7.0
V
IIK
input clamping current
IOK
output clamping current
VI < −0.5 V or VI > VCC + 0.5 V
-
±20
mA
VO < −0.5 V or VO > VCC + 0.5 V
-
±20
mA
IO
output current
−0.5 V < VO < VCC + 0.5 V
-
±12.5
mA
ICC
supply current
-
25
mA
IGND
ground current
−25
-
mA
Tstg
storage temperature
−65
+150
°C
-
200
mW
Tamb = −40 °C to +125 °C
total power dissipation
Ptot
[2]
[1]
The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
[2]
Above 55 °C the value of Ptot derates linearly with 2.5 mW/K.
9. Recommended operating conditions
Table 6.
Recommended operating conditions
Voltages are referenced to GND (ground = 0 V).
Symbol Parameter
VCC
supply voltage
Conditions
74HC1G00
74HCT1G00
Unit
Min
Typ
Max
Min
Typ
Max
2.0
5.0
6.0
4.5
5.0
5.5
V
VI
input voltage
0
-
VCC
0
-
VCC
V
VO
output voltage
0
-
VCC
0
-
VCC
V
Tamb
ambient temperature
−40
+25
+125
−40
+25
+125
°C
∆t/∆V
input transition rise
and fall rate
VCC = 2.0 V
-
-
625
-
-
-
VCC = 4.5 V
-
-
139
-
-
139
ns/V
VCC = 6.0 V
-
-
83
-
-
-
ns/V
ns/V
10. Static characteristics
Table 7.
Static characteristics
Voltages are referenced to GND (ground = 0 V). All typical values are measured at Tamb = 25 °C.
Symbol
Parameter
Conditions
−40 °C to +85 °C
−40 °C to +125 °C
Unit
Min
Typ
Max
Min
Max
VCC = 2.0 V
1.5
1.2
-
1.5
-
V
VCC = 4.5 V
3.15
2.4
-
3.15
-
V
VCC = 6.0 V
4.2
3.2
-
4.2
-
V
For type 74HC1G00
VIH
VIL
HIGH-level input
voltage
LOW-level input
voltage
VCC = 2.0 V
-
0.8
0.5
-
0.5
V
VCC = 4.5 V
-
2.1
1.35
-
1.35
V
VCC = 6.0 V
-
2.8
1.8
-
1.8
V
74HC_HCT1G00_4
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 04 — 11 July 2007
3 of 10
74HC1G00; 74HCT1G00
NXP Semiconductors
2-input NAND gate
Table 7.
Static characteristics …continued
Voltages are referenced to GND (ground = 0 V). All typical values are measured at Tamb = 25 °C.
Symbol
VOH
VOL
Parameter
HIGH-level output
voltage
LOW-level output
voltage
−40 °C to +85 °C
Conditions
−40 °C to +125 °C
Min
Typ
Max
Min
Max
Unit
VI = VIH or VIL
IO = −20 µA; VCC = 2.0 V
1.9
2.0
-
1.9
-
V
IO = −20 µA; VCC = 4.5 V
4.4
4.5
-
4.4
-
V
IO = −20 µA; VCC = 6.0 V
5.9
6.0
-
5.9
-
V
IO = −2.0 mA; VCC = 4.5 V
4.13
4.32
-
3.7
-
V
IO = −2.6 mA; VCC = 6.0 V
5.63
5.81
-
5.2
-
V
IO = 20 µA; VCC = 2.0 V
-
0
0.1
-
0.1
V
IO = 20 µA; VCC = 4.5 V
-
0
0.1
-
0.1
V
IO = 20 µA; VCC = 6.0 V
-
0
0.1
-
0.1
V
IO = 2.0 mA; VCC = 4.5 V
-
0.15
0.33
-
0.4
V
IO = 2.6 mA; VCC = 6.0 V
-
0.16
0.33
-
0.4
V
VI = VIH or VIL
II
input leakage current
VI = VCC or GND; VCC = 6.0 V
-
-
1.0
-
1.0
µA
ICC
supply current
VI = VCC or GND; IO = 0 A;
VCC = 6.0 V
-
-
10
-
20
µA
CI
input capacitance
-
1.5
-
-
-
pF
For type 74HCT1G00
VIH
HIGH-level input
voltage
VCC = 4.5 V to 5.5 V
2.0
1.6
-
2.0
-
V
VIL
LOW-level input
voltage
VCC = 4.5 V to 5.5 V
-
1.2
0.8
-
0.8
V
VOH
HIGH-level output
voltage
VI = VIH or VIL
IO = −20 µA; VCC = 4.5 V
4.4
4.5
-
4.4
-
V
IO = −2.0 mA; VCC = 4.5 V
4.13
4.32
-
3.7
-
V
VOL
LOW-level output
voltage
VI = VIH or VIL
IO = 20 µA; VCC = 4.5 V
-
0
0.1
-
0.1
V
IO = 2.0 mA; VCC = 4.5 V
-
0.15
0.33
-
0.4
V
II
input leakage current
VI = VCC or GND; VCC = 5.5 V
-
-
1.0
-
1.0
µA
ICC
supply current
VI = VCC or GND; IO = 0 A;
VCC = 5.5 V
-
-
10
-
20
µA
∆ICC
additional supply
current
per input; VCC = 4.5 V to 5.5 V;
VI = VCC − 2.1 V; IO = 0 A
-
-
500
-
850
µA
CI
input capacitance
-
1.5
-
-
-
pF
74HC_HCT1G00_4
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 04 — 11 July 2007
4 of 10
74HC1G00; 74HCT1G00
NXP Semiconductors
2-input NAND gate
11. Dynamic characteristics
Table 8.
Dynamic characteristics
GND = 0 V; tr = tf ≤ 6.0 ns; All typical values are measured at Tamb = 25 °C. For test circuit see Figure 6
Symbol Parameter
−40 °C to +85 °C
Conditions
−40 °C to +125 °C Unit
Min
Typ
Max
Min
Max
VCC = 2.0 V; CL = 50 pF
-
25
115
-
135
ns
VCC = 4.5 V; CL = 50 pF
-
9
23
-
27
ns
VCC = 5.0 V; CL = 15 pF
-
7
-
-
-
ns
VCC = 6.0 V; CL = 50 pF
-
8
20
-
23
ns
-
19
-
-
-
pF
-
12
24
-
27
ns
-
10
-
-
-
ns
-
21
-
-
-
pF
For type 74HC1G00
tpd
CPD
propagation delay A and B to Y; see Figure 5
[1]
[2]
power dissipation VI = GND to VCC
capacitance
For type 74HCT1G00
tpd
propagation delay A and B to Y; see Figure 5
[1]
VCC = 4.5 V; CL = 50 pF
VCC = 5.0 V; CL = 15 pF
CPD
power dissipation VI = GND to VCC − 1.5 V
capacitance
[1]
tpd is the same as tPLH and tPHL.
[2]
CPD is used to determine the dynamic power dissipation PD (µW).
PD = CPD × VCC2 × fi + ∑ (CL × VCC2 × fo) where:
fi = input frequency in MHz; fo = output frequency in MHz
CL = output load capacitance in pF
VCC = supply voltage in Volts
∑ (CL × VCC2 × fo) = sum of outputs
[2]
12. Waveforms
A, B input
VM
VCC
tPHL
Y output
tPLH
PULSE
GENERATOR
VM
VI
VO
DUT
CL
RT
mna101
mna100
For HC1G: VM = 0.5 × VCC; VI = GND to VCC
Test data is given in Table 8.
For HCT1G: VM = 1.3 V; VI = GND to 3.0 V
CL = Load capacitance including jig and probe
capacitance.
RT = Termination resistance should be equal to
output impedance Zo of the pulse generator.
Fig 5. Input to output propagation delays
Fig 6. Load circuitry for switching times
74HC_HCT1G00_4
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 04 — 11 July 2007
5 of 10
74HC1G00; 74HCT1G00
NXP Semiconductors
2-input NAND gate
13. Package outline
TSSOP5: plastic thin shrink small outline package; 5 leads; body width 1.25 mm
E
D
SOT353-1
A
X
c
y
HE
v M A
Z
5
4
A2
A
(A3)
A1
θ
1
Lp
3
L
e
w M
bp
detail X
e1
0
1.5
3 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
max.
A1
A2
A3
bp
c
D(1)
E(1)
e
e1
HE
L
Lp
v
w
y
Z(1)
θ
mm
1.1
0.1
0
1.0
0.8
0.15
0.30
0.15
0.25
0.08
2.25
1.85
1.35
1.15
0.65
1.3
2.25
2.0
0.425
0.46
0.21
0.3
0.1
0.1
0.60
0.15
7°
0°
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
OUTLINE
VERSION
SOT353-1
REFERENCES
IEC
JEDEC
JEITA
MO-203
SC-88A
EUROPEAN
PROJECTION
ISSUE DATE
00-09-01
03-02-19
Fig 7. Package outline SOT353-1 (TSSOP5)
74HC_HCT1G00_4
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 04 — 11 July 2007
6 of 10
74HC1G00; 74HCT1G00
NXP Semiconductors
2-input NAND gate
Plastic surface-mounted package; 5 leads
SOT753
D
E
B
y
A
X
HE
5
v M A
4
Q
A
A1
c
1
2
3
Lp
detail X
bp
e
w M B
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
bp
c
D
E
e
HE
Lp
Q
v
w
y
mm
1.1
0.9
0.100
0.013
0.40
0.25
0.26
0.10
3.1
2.7
1.7
1.3
0.95
3.0
2.5
0.6
0.2
0.33
0.23
0.2
0.2
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
SOT753
JEITA
SC-74A
EUROPEAN
PROJECTION
ISSUE DATE
02-04-16
06-03-16
Fig 8. Package outline SOT753 (SC-74A)
74HC_HCT1G00_4
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 04 — 11 July 2007
7 of 10
74HC1G00; 74HCT1G00
NXP Semiconductors
2-input NAND gate
14. Abbreviations
Table 9.
Abbreviations
Acronym
Description
DUT
Device Under Test
TTL
Transistor-Transistor Logic
15. Revision history
Table 10.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
74HC_HCT1G00_4
20070711
Product data sheet
-
74HC_HCT1G00_3
Modifications:
•
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
•
•
•
•
Legal texts have been adapted to the new company name where appropriate.
Package SOT353 changed to SOT353-1 in Section 3 and Section 13.
Quick reference data and Soldering sections removed.
Section 2 “Features” updated.
74HC_HCT1G00_3
20020515
Product specification
74HC_HCT1G00_2
20010302
Product specification
-
74HC_HCT1G00_1
74HC_HCT1G00_1
19980730
Preliminary specification
-
-
74HC_HCT1G00_4
Product data sheet
-
74HC_HCT1G00_2
© NXP B.V. 2007. All rights reserved.
Rev. 04 — 11 July 2007
8 of 10
74HC1G00; 74HCT1G00
NXP Semiconductors
2-input NAND gate
16. Legal information
16.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
16.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
16.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of a NXP Semiconductors product can reasonably be expected to
result in personal injury, death or severe property or environmental damage.
NXP Semiconductors accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or applications and therefore
such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
16.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
17. Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: [email protected]
74HC_HCT1G00_4
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 04 — 11 July 2007
9 of 10
NXP Semiconductors
74HC1G00; 74HCT1G00
2-input NAND gate
18. Contents
1
2
3
4
5
6
6.1
6.2
7
8
9
10
11
12
13
14
15
16
16.1
16.2
16.3
16.4
17
18
General description . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Ordering information . . . . . . . . . . . . . . . . . . . . . 1
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 2
Functional description . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Recommended operating conditions. . . . . . . . 3
Static characteristics. . . . . . . . . . . . . . . . . . . . . 3
Dynamic characteristics . . . . . . . . . . . . . . . . . . 5
Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 6
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 8
Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Contact information. . . . . . . . . . . . . . . . . . . . . . 9
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2007.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 11 July 2007
Document identifier: 74HC_HCT1G00_4