PHILIPS BUK456-800

Philips Semiconductors
Product Specification
PowerMOS transistor
GENERAL DESCRIPTION
N-channel enhancement mode
field-effect power transistor in a
plastic envelope.
The device is intended for use in
Switched Mode Power Supplies
(SMPS), motor control, welding,
DC/DC and AC/DC converters, and
in general purpose switching
applications.
PINNING - TO220AB
PIN
QUICK REFERENCE DATA
SYMBOL
PARAMETER
MAX.
MAX.
UNIT
VDS
ID
Ptot
RDS(ON)
BUK456
Drain-source voltage
Drain current (DC)
Total power dissipation
Drain-source on-state
resistance
-800A
800
4
125
3
-800B
800
3.5
125
4
V
A
W
Ω
PIN CONFIGURATION
DESCRIPTION
1
gate
2
drain
3
source
tab
BUK456-800A/B
SYMBOL
d
tab
g
drain
s
1 23
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
VDGR
±VGS
Drain-source voltage
Drain-gate voltage
Gate-source voltage
RGS = 20 kΩ
-
-
800
800
30
V
V
V
ID
ID
IDM
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Tmb = 25 ˚C
Tmb = 100 ˚C
Tmb = 25 ˚C
-
Ptot
Tstg
Tj
Total power dissipation
Storage temperature
Junction Temperature
Tmb = 25 ˚C
-
- 55
-
-800A
4.0
2.5
16
-800B
3.5
2.2
14
A
A
A
125
150
150
W
˚C
˚C
THERMAL RESISTANCES
SYMBOL
PARAMETER
Rth j-mb
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
Rth j-a
May 1995
CONDITIONS
1
MIN.
TYP.
MAX.
UNIT
-
-
1.0
K/W
-
60
-
K/W
Rev 1.200
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK456-800A/B
STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)DSS
Drain-source breakdown
voltage
Gate threshold voltage
Zero gate voltage drain current
Zero gate voltage drain current
Gate source leakage current
Drain-source on-state
resistance
VGS = 0 V; ID = 0.25 mA
800
-
-
V
VDS = VGS; ID = 1 mA
VDS = 800 V; VGS = 0 V; Tj = 25 ˚C
VDS = 800 V; VGS = 0 V; Tj =125 ˚C
VGS = ±30 V; VDS = 0 V
VGS = 10 V;
BUK456-800A
BUK456-800B
ID = 1.5 A
2.1
-
3.0
2
0.1
10
2.7
3.5
4.0
20
1.0
100
3.0
4.0
V
µA
mA
nA
Ω
Ω
MIN.
TYP.
MAX.
UNIT
VGS(TO)
IDSS
IDSS
IGSS
RDS(ON)
DYNAMIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
gfs
Forward transconductance
VDS = 25 V; ID = 1.5 A
3.0
4.3
-
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Feedback capacitance
VGS = 0 V; VDS = 25 V; f = 1 MHz
-
1000
80
30
1250
120
50
pF
pF
pF
td on
tr
td off
tf
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
VDD = 30 V; ID = 2.3 A;
VGS = 10 V; RGS = 50 Ω;
Rgen = 50 Ω
-
10
50
130
40
25
70
150
60
ns
ns
ns
ns
Ld
Internal drain inductance
-
3.5
-
nH
Ld
Internal drain inductance
-
4.5
-
nH
Ls
Internal source inductance
Measured from contact screw on
tab to centre of die
Measured from drain lead 6 mm
from package to centre of die
Measured from source lead 6 mm
from package to source bond pad
-
7.5
-
nH
MIN.
TYP.
MAX.
UNIT
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
IDR
-
-
-
4.0
A
IDRM
VSD
Continuous reverse drain
current
Pulsed reverse drain current
Diode forward voltage
IF = 4.0 A ; VGS = 0 V
-
1.0
16
1.3
A
V
trr
Qrr
Reverse recovery time
Reverse recovery charge
IF = 4.0 A; -dIF/dt = 100 A/µs;
VGS = 0 V; VR = 100 V
-
1800
12
-
ns
µC
May 1995
2
Rev 1.200
Philips Semiconductors
Product Specification
PowerMOS transistor
Normalised Power Derating
PD%
120
BUK456-800A/B
Zth j-mb / (K/W)
10
BUKx56-hv
110
100
90
D=
0.5
1
80
70
60
50
0.2
0.1
0.05
0.02
0.1
40
30
0.01
PD
0
20
10
p
D= t
T
tp
t
T
0
0
20
40
60
80
100
Tmb / C
120
0.001
140
1E-05
Fig.1. Normalised power dissipation.
PD% = 100⋅PD/PD 25 ˚C = f(Tmb)
1E-01
1E+01
Fig.4. Transient thermal impedance.
Zth j-mb = f(t); parameter D = tp/T
Normalised Current Derating
ID%
120
1E-03
t/s
8
BUK4y6-800A
ID / A
110
VGS / V =
100
90
10
6
6
5
80
70
4.8
60
50
4
4.6
40
4.4
30
2
4.2
4
20
10
0
0
0
20
40
60
80
Tmb / C
100
120
140
ID / A
BUK456-800A,B
/ID
N)
10
=
S
VD
4
8
12
16
VDS / V
10
4
8
A
RD
24
28
BUK4y6-800A
RDS(ON) / Ohm
4.2
4.4
4.6
VGS / V =
B
O
S(
20
Fig.5. Typical output characteristics, Tj = 25 ˚C.
ID = f(VDS); parameter VGS
Fig.2. Normalised continuous drain current.
ID% = 100⋅ID/ID 25 ˚C = f(Tmb); conditions: VGS ≥ 10 V
100
0
tp = 10 us
4.8
6
5
100 us
4
1
10
1 ms
DC
2
10 ms
100 ms
0
0.1
10
100
0
1000
Fig.3. Safe operating area. Tmb = 25 ˚C
ID & IDM = f(VDS); IDM single pulse; parameter tp
May 1995
2
4
6
ID / A
VDS / V
Fig.6. Typical on-state resistance, Tj = 25 ˚C.
RDS(ON) = f(ID); parameter VGS
3
Rev 1.200
Philips Semiconductors
Product Specification
PowerMOS transistor
8
BUK456-800A/B
ID / A
VGS(TO) / V
BUK4y6-800A
max.
4
Tj / C =
25
6
typ.
3
150
4
min.
2
2
1
0
0
0
2
4
6
8
-60
10
-40
-20
0
VGS / V
BUK4y6-800A
gfs / S
40
60
Tj / C
80
100
120
140
Fig.10. Gate threshold voltage.
VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS
Fig.7. Typical transfer characteristics.
ID = f(VGS) ; conditions: VDS = 25 V; parameter Tj
7
20
6
SUB-THRESHOLD CONDUCTION
ID / A
1E-01
1E-02
5
2%
1E-03
4
3
typ
98 %
1E-04
2
1E-05
1
0
1E-06
0
2
4
ID / A
6
8
0
Fig.8. Typical transconductance, Tj = 25 ˚C.
gfs = f(ID); conditions: VDS = 25 V
2
VGS / V
3
4
Fig.11. Sub-threshold drain current.
ID = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS
Normalised RDS(ON) = f(Tj)
a
1
10000
BUK4y6-800
C / pF
2
1000
Ciss
1
100
Coss
Crss
0
-60
-40
-20
0
20
40 60
Tj / C
80
10
100 120 140
0
40
VDS / V
Fig.9. Normalised drain-source on-state resistance.
a = RDS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 1.5 A; VGS = 10 V
May 1995
20
Fig.12. Typical capacitances, Ciss, Coss, Crss.
C = f(VDS); conditions: VGS = 0 V; f = 1 MHz
4
Rev 1.200
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK4y6-800
VGS / V
12
BUK456-800A/B
10
IF / A
BUK4y6-800A
VDS / V =160
10
8
Tj / C = 150
640
6
25
5
4
2
0
0
20
0
40
0
QG / nC
Fig.13. Typical turn-on gate-charge characteristics.
VGS = f(QG); conditions: ID = 4 A; parameter VDS
May 1995
1
VSDS / V
2
Fig.14. Typical reverse diode current.
IF = f(VSDS); conditions: VGS = 0 V; parameter Tj
5
Rev 1.200
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK456-800A/B
MECHANICAL DATA
Dimensions in mm
4,5
max
Net Mass: 2 g
10,3
max
1,3
3,7
2,8
5,9
min
15,8
max
3,0 max
not tinned
3,0
13,5
min
1,3
max 1 2 3
(2x)
0,9 max (3x)
2,54 2,54
0,6
2,4
Fig.15. TO220AB; pin 2 connected to mounting base.
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.
2. Refer to mounting instructions for TO220 envelopes.
3. Epoxy meets UL94 V0 at 1/8".
May 1995
6
Rev 1.200
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK456-800A/B
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 1996
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
May 1995
7
Rev 1.200